CN203572999U

CN203572999U - Temperature measuring optical filter with initial passing wavelength of 5700 nm

Info

Publication number: CN203572999U
Application number: CN201320781959.4U
Authority: CN
Inventors: 吕晶; 王继平; 刘晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: MULTI IR OPTOELECTRONICS CO Ltd
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-30
Anticipated expiration: 2023-11-29

Abstract

The utility model provides a temperature measuring optical filter with an initial passing wavelength of 5700 nm, and the temperature measuring optical filter is high in measuring precision and can greatly raise the signal to noise ratio. The temperature measuring optical filter includes a substrate taking Si as raw material, and Ge and ZnS as a first coating film layer and a second coating film layer, and the substrate is arranged between the first coating film layer and the second coating film layer. When the temperature measuring optical filter with the initial passing wavelength of 5700 nm is used for measuring a temperature, the signal to noise ratio can be greatly raised, and the measuring precision is raised. When the wavelength of the optical filter is 6574 nm, T is equal to or greater than 90 %; when the wavelength of the optical filter is in a range of 6574 to 24000 nm, Tavg is equal to or greater than 78 %; when the wavelength of the optical filter is 24000 nm, T is equal to or greater than 20 %; and when the wavelength of the optical filter is in a range of 1300 to 5700 nm, 3 % Tavg is greater than T and less than 0.5 %.

Description

Initial by the thermometric optical filter of wavelength 5700nm

Technical field

The utility model relates to infrared fileter field, especially a kind of initial by the thermometric optical filter of wavelength 5700nm.

Background technology

Infrared thermometer is partly comprised of optical system, detector, signal amplifier and signal processing, demonstration output etc.Optical system converges the Infrared Targets energy (heat) in its visual field, and the size of visual field is by optical element and the location positioning thereof of temperature measurer.Infrared energy focuses on detector and changes corresponding electric signal into.This signal process amplifier and signal processing circuit, and according to changing the temperature value of measured target after the algorithm in instrument and the correction of target emissivity into.

The detector of infrared thermometer is the key that realizes infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sending due to various biologies is different, so in routine use in order to observe the temperature value of certain particular organisms, people tend to add infrared fileter in detector, by infrared fileter, can make detector only accept the infrared energy of specific band, guarantee the temperature-measuring results of infrared thermometer, for thermometric and imaging.

But, current optical filter, its signal to noise ratio (S/N ratio) is low, and low precision can not meet the needs of market development.

Utility model content

The purpose of this utility model is that the initial thermometric optical filter of wavelength 5700nm that passes through that a kind of measuring accuracy is high, can greatly improve signal to noise ratio (S/N ratio) is provided in order to solve the deficiency of above-mentioned technology.

In order to achieve the above object, the initial thermometric optical filter of wavelength 5700nm that passes through that the utility model is designed, comprises and take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 109nm thickness, the ZnS layer of 95nm thickness, the Ge layer of 234nm thickness, the ZnS layer of 161nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 140nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 79nm thickness, the ZnS layer of 238nm thickness, the Ge layer of 72nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 598nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 545nm thickness, the Ge layer of 342nm thickness, the ZnS layer of 419nm thickness, the Ge layer of 394nm thickness, the ZnS layer of 434nm thickness, the Ge layer of 303nm thickness, the ZnS layer of 686nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 387nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 169nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 218nm thickness, the ZnS layer of 210nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 214nm thickness, the Ge layer of 158nm thickness, the ZnS layer of 316nm thickness, the Ge layer of 165nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 87nm thickness, the ZnS layer of 306nm thickness, the Ge layer of 151nm thickness, the ZnS layer of 467nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 416nm thickness, the Ge layer of 217nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 239nm thickness, the ZnS layer of 301nm thickness, the Ge layer of 273nm thickness, the ZnS layer of 378nm thickness, the Ge layer of 220nm thickness, the ZnS layer of 605nm thickness, the Ge layer of 71nm thickness, the ZnS layer of 681nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 298nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The resulting initial thermometric optical filter of wavelength 5700nm that passes through of the utility model, it can improve greatly signal to noise ratio (S/N ratio) in temperature survey process, improves accurate testing degree.This optical filter 6574nm T >=90%; 6574～24000nm Tavg >=78%; 24000nm T >=20%; 1300～5700nm T < 3%Tavg < 0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, what the present embodiment was described is initial by the thermometric optical filter of wavelength 5700nm, comprises and take Si as raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 109nm thickness, the ZnS layer of 95nm thickness, the Ge layer of 234nm thickness, the ZnS layer of 161nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 140nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 79nm thickness, the ZnS layer of 238nm thickness, the Ge layer of 72nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 598nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 545nm thickness, the Ge layer of 342nm thickness, the ZnS layer of 419nm thickness, the Ge layer of 394nm thickness, the ZnS layer of 434nm thickness, the Ge layer of 303nm thickness, the ZnS layer of 686nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 387nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 169nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 218nm thickness, the ZnS layer of 210nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 214nm thickness, the Ge layer of 158nm thickness, the ZnS layer of 316nm thickness, the Ge layer of 165nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 87nm thickness, the ZnS layer of 306nm thickness, the Ge layer of 151nm thickness, the ZnS layer of 467nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 416nm thickness, the Ge layer of 217nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 239nm thickness, the ZnS layer of 301nm thickness, the Ge layer of 273nm thickness, the ZnS layer of 378nm thickness, the Ge layer of 220nm thickness, the ZnS layer of 605nm thickness, the Ge layer of 71nm thickness, the ZnS layer of 681nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 298nm thickness.

Claims

1. initial by a thermometric optical filter of wavelength 5700nm, comprise and take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 109nm thickness, the ZnS layer of 95nm thickness, the Ge layer of 234nm thickness, the ZnS layer of 161nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 140nm thickness, the ZnS layer of 137nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 79nm thickness, the ZnS layer of 238nm thickness, the Ge layer of 72nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 598nm thickness, the Ge layer of 248nm thickness, the ZnS layer of 545nm thickness, the Ge layer of 342nm thickness, the ZnS layer of 419nm thickness, the Ge layer of 394nm thickness, the ZnS layer of 434nm thickness, the Ge layer of 303nm thickness, the ZnS layer of 686nm thickness, the Ge layer of 117nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 387nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 169nm thickness, the ZnS layer of 197nm thickness, the Ge layer of 218nm thickness, the ZnS layer of 210nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 214nm thickness, the Ge layer of 158nm thickness, the ZnS layer of 316nm thickness, the Ge layer of 165nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 87nm thickness, the ZnS layer of 306nm thickness, the Ge layer of 151nm thickness, the ZnS layer of 467nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 416nm thickness, the Ge layer of 217nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 239nm thickness, the ZnS layer of 301nm thickness, the Ge layer of 273nm thickness, the ZnS layer of 378nm thickness, the Ge layer of 220nm thickness, the ZnS layer of 605nm thickness, the Ge layer of 71nm thickness, the ZnS layer of 681nm thickness, the Ge layer of 600nm thickness and the ZnS layer of 298nm thickness.