CN204374465U

CN204374465U - The logical infrared filtering sensitive element of 4700nm band

Info

Publication number: CN204374465U
Application number: CN201420757537.8U
Authority: CN
Inventors: 王继平; 吕晶; 余初旺
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2014-12-07
Filing date: 2014-12-07
Publication date: 2015-06-03
Anticipated expiration: 2024-12-07

Abstract

The utility model discloses a kind of 4700nm and be with logical infrared filtering sensitive element, comprising with sapphire is raw-material substrate, be the second film plating layer with Ge, SiO for the first filming layer with Ge, SiO, and described substrate is located between the first filming layer and the second film plating layer.The logical infrared filtering sensitive element of a kind of 4700nm band that the utility model obtains, its centre wavelength 4700 ± 20nm, it, in petrochemical system infrared gas detection process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=80% of this optical filtering sensitive element, bandwidth=90 ± 10nm, 400 ~ 14000nm(is except passband), Tavg<0.5%.

Description

The logical infrared filtering sensitive element of 4700nm band

Technical field

The utility model relates to infrared filtering sensitive element field, the logical infrared filtering sensitive element of especially a kind of 4700nm band.

Background technology

Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in petrochemical system infrared gas detection process not high, high-precision measurement requirement can not be met.

Utility model content

The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the logical infrared filtering sensitive element of 4700nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).

In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 4700nm band designed by the utility model, comprising with sapphire is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order the Ge layer including 103nm thickness from inside to outside, the SiO layer of 346nm thickness, the Ge layer of 160nm thickness, the SiO layer of 160nm thickness, the Ge layer of 122nm thickness, the SiO layer of 353nm thickness, the Ge layer of 134nm thickness, the SiO layer of 294nm thickness, the Ge layer of 145nm thickness, the SiO layer of 203nm thickness, the Ge layer of 101nm thickness, the SiO layer of 478nm thickness, the Ge layer of 215nm thickness, the SiO layer of 301nm thickness, the Ge layer of 145nm thickness, the SiO layer of 604nm thickness, the Ge layer of 245nm thickness, the SiO layer of 265nm thickness, the Ge layer of 126nm thickness, the SiO layer of 645nm thickness, the Ge layer of 243nm thickness, the SiO layer of 323nm thickness, the Ge layer of 37nm thickness, the SiO layer of 788nm thickness, the Ge layer of 416nm thickness, the SiO layer of 807nm thickness, the Ge layer of 487nm thickness, the SiO layer of 339nm thickness, the second described film plating layer is arranged in order the Ge layer including 140nm thickness from inside to outside, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 849nm thickness.

The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.

The logical infrared filtering sensitive element of a kind of 4700nm band that the utility model obtains, its centre wavelength 4700 ± 20nm, it, in petrochemical system infrared gas detection process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=80% of this optical filtering sensitive element, bandwidth=90 ± 10nm, 400 ~ 14000nm(is except passband), Tavg<0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram.

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

In figure: the first filming layer 1, substrate 2, second film plating layer 3.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1.

As Fig. 1, shown in Fig. 2, the logical infrared filtering sensitive element of a kind of 4700nm band that the present embodiment describes, comprising with sapphire is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 103nm thickness from inside to outside, the SiO layer of 346nm thickness, the Ge layer of 160nm thickness, the SiO layer of 160nm thickness, the Ge layer of 122nm thickness, the SiO layer of 353nm thickness, the Ge layer of 134nm thickness, the SiO layer of 294nm thickness, the Ge layer of 145nm thickness, the SiO layer of 203nm thickness, the Ge layer of 101nm thickness, the SiO layer of 478nm thickness, the Ge layer of 215nm thickness, the SiO layer of 301nm thickness, the Ge layer of 145nm thickness, the SiO layer of 604nm thickness, the Ge layer of 245nm thickness, the SiO layer of 265nm thickness, the Ge layer of 126nm thickness, the SiO layer of 645nm thickness, the Ge layer of 243nm thickness, the SiO layer of 323nm thickness, the Ge layer of 37nm thickness, the SiO layer of 788nm thickness, the Ge layer of 416nm thickness, the SiO layer of 807nm thickness, the Ge layer of 487nm thickness, the SiO layer of 339nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 140nm thickness from inside to outside, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 849nm thickness.

Claims

1. the logical infrared filtering sensitive element of 4700nm band, comprising with sapphire is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 103nm thickness from inside to outside, the SiO layer of 346nm thickness, the Ge layer of 160nm thickness, the SiO layer of 160nm thickness, the Ge layer of 122nm thickness, the SiO layer of 353nm thickness, the Ge layer of 134nm thickness, the SiO layer of 294nm thickness, the Ge layer of 145nm thickness, the SiO layer of 203nm thickness, the Ge layer of 101nm thickness, the SiO layer of 478nm thickness, the Ge layer of 215nm thickness, the SiO layer of 301nm thickness, the Ge layer of 145nm thickness, the SiO layer of 604nm thickness, the Ge layer of 245nm thickness, the SiO layer of 265nm thickness, the Ge layer of 126nm thickness, the SiO layer of 645nm thickness, the Ge layer of 243nm thickness, the SiO layer of 323nm thickness, the Ge layer of 37nm thickness, the SiO layer of 788nm thickness, the Ge layer of 416nm thickness, the SiO layer of 807nm thickness, the Ge layer of 487nm thickness, the SiO layer of 339nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 140nm thickness from inside to outside, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 561nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 526nm thickness, the Ge layer of 207nm thickness, the ZnS layer of 849nm thickness.