CN203340507U - An integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component - Google Patents
An integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component Download PDFInfo
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- CN203340507U CN203340507U CN2013203437745U CN201320343774U CN203340507U CN 203340507 U CN203340507 U CN 203340507U CN 2013203437745 U CN2013203437745 U CN 2013203437745U CN 201320343774 U CN201320343774 U CN 201320343774U CN 203340507 U CN203340507 U CN 203340507U
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Abstract
The utility model discloses an integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component. On a water cooling head surface, an aluminum oxide insulating layer, a thermal stress buffer layer, a first conductive layer, a second conductive layer, and a soldering layer are successively disposed, or an aluminum nitride insulating layer, a tantalum nitride layer, a thermal stress buffer layer, a first conductive layer, a second conductive layer, and a soldering layer are successively disposed. The heat dissipating device is suitable for heat dissipation of large-power devices. The water cooling head and an electronic circuit substrate are combined into one body so as to achieve a good heat dissipating effect and prevent the use of heat-conducting glue. Therefore, heat dissipation bottleneck caused by over-low heat conductivity coefficient of the heat-conducting glue is prevented, wherein the over-low heat conductivity coefficient of the heat-conducting glue may influence thermal conduction efficiency.
Description
Technical field
This practicality relates to a kind of integrated water-cooling and directly seals great-power electronic element radiating device.
Background technology
Heat dissipation problem for the amount of heat that effectively the solution high power device is emitted in the process of carrying out photoelectric conversion.Take LED as example, and conventional way is the ceramic circuit board that adopts high heat conduction, ceramic circuit board self insulation.Processing electronic circuit on pottery.Subsequently, by the ceramic substrate of LED lamp bead seal dress (welding, spun gold binding).Then adopt heat-conducting glue, ceramic substrate (backboard is pottery) is sticked on water-cooling head (aluminium or copper) surface.Carry out water-cooled or wind-cooling heat dissipating.The limitation of this heat radiation is, the connection between pottery and water-cooling head must be used heat-conducting glue, heat conductivility very low (<5W/mK).
the utility model content
This practical purpose is to provide a kind of integrated water-cooling directly to seal great-power electronic element radiating device.
The technical scheme that this practicality is taked is:
A kind of integrated water-cooling directly seals great-power electronic element radiating device, but it is provided with successively alumina insulating layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface; Perhaps, but it is provided with successively aluminium nitride insulating barrier, tantalum nitride layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface.
The thickness of described heat stress buffer layer is 300-850.
The thickness of described the first conductive layer is 300-850.
The thickness of described the second conductive layer is 0.05-1mm.
But the thickness of described layer is 2-20 μ m.
This practical beneficial effect is: this practical heat abstractor is suitable for the heat radiation of high power device, because water-cooling head and electronic circuit board are united two into one, there is radiating effect preferably, also without using heat-conducting glue, thereby avoid that conductive coefficient because of heat-conducting glue is too low causes the heat radiation bottleneck, and then affect heat conduction efficiency.
the accompanying drawing explanation:
Fig. 1 is the schematic diagram of a kind of heat abstractor of this practicality.
Fig. 2 is the schematic diagram of the another kind of heat abstractor of this practicality.
Embodiment
A kind of integrated water-cooling directly seals great-power electronic element radiating device, but it is provided with successively alumina insulating layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface, perhaps, but it is provided with successively aluminium nitride insulating barrier, tantalum nitride layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface.
Corresponding, the manufacture method of this heat abstractor: a kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device (insulating barrier of heat abstractor is aluminium oxide), comprises the following steps:
1) form one deck alumina insulating layer by anode oxidation method on the water-cooling head surface;
2) adopt the physical deposition method, on the alumina insulating layer surface, form one deck heat stress buffer layer;
3) adopt the physical deposition method, on the heat stress buffer layer surface, form the first conductive layer;
4) adopt electrochemical deposition method, at the first conductive layer surface, form the second conductive layer;
5) carry out pad pasting, etching at the second conductive layer surface, form circuit, then adopt electrochemical deposition method, but plate the layer metal;
Described water-cooling head is aluminium matter water-cooling head.
The thickness of described alumina insulating layer is 11-99 μ m.
The alloy that described heat stress buffer layer metal is any two kinds of formation in Ti, W, Mo, Cr, five kinds of metals of Ni; The thickness of heat stress buffer layer is 300-850.
The alloy that described the first conductive layer metal is a kind of or at least two kinds of formation in Ag, Cu, Au, Al, Ni, Fe; The thickness of the first conductive layer is 300-850.
The alloy that described the second conductive layer metal is a kind of or at least two kinds of formation in Ag, Cu, Au; The thickness of the second conductive layer is 0.05-1mm.
But described layer metal is chemical nickel plating/soak gold, chemical plating/electrosilvering, chemical plating/electrotinning or electroplates Sn/Au eutectic; But the thickness of described layer is 2-20 μ m.
In step 1), anode oxidation method anodizing solution used is sulfuric acid-oxalic acid system, the concentration of sulfuric acid is 0.16-0.2mol/L, the concentration of oxalic acid is 0.16-0.2mol/L, also contain the rare-earth salts of 0.1-0.15wt% in anodizing solution, described rare-earth salts is at least one in yttrium nitrate, cerous sulfate, lanthanum sulfate; In anode oxidation method, voltage is 25-30V, and graphite is negative electrode, and oxidization time is 3-4h.
Perhaps, corresponding, the manufacture method of this heat abstractor: a kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device (insulating barrier of heat abstractor is aluminium nitride), comprises the following steps:
1) form one deck aluminium nitride insulating barrier by the physical deposition method on the water-cooling head surface;
2) form one deck tantalum nitride layer by the physical deposition method at the aluminium nitride surface of insulating layer;
3) adopt the physical deposition method, on the tantalum nitride layer surface, form one deck heat stress buffer layer;
4) adopt the physical deposition method, on the heat stress buffer layer surface, form the first conductive layer;
5) adopt electrochemical deposition method, at the first conductive layer surface, form the second conductive layer;
6) carry out pad pasting, etching at the second conductive layer surface, form circuit, then adopt electrochemical deposition method, but plate the layer metal;
Described water-cooling head is aluminium matter water-cooling head.
The thickness of described aluminium nitride insulating barrier is 400-800.
The thickness of described tantalum nitride layer is 300-850.
The alloy that described heat stress buffer layer metal is any two kinds of formation in Ti, W, Mo, Cr, five kinds of metals of Ni; The thickness of heat stress buffer layer is 300-850.
The alloy that described the first conductive layer metal is a kind of or at least two kinds of formation in Ag, Cu, Au, Al, Ni, Fe; The thickness of the first conductive layer is 300-850.
The alloy that described the second conductive layer metal is a kind of or at least two kinds of formation in Ag, Cu, Au; The thickness of the second conductive layer is 0.05-1mm.
But described layer metal is chemical nickel plating/soak gold, chemical plating/electrosilvering or chemical plating/electrotinning; But the thickness of described layer is 2-20 μ m.
In this practicality, described physical deposition method is ion plating, magnetron sputtering or evaporation, and described electrochemical deposition method is for electroplating or chemical plating.
Below in conjunction with accompanying drawing, the structure that this is practical is described: as shown in Figure 1, a kind of integrated water-cooling directly seals great-power electronic element radiating device, but it is provided with successively alumina insulating layer 2, heat stress buffer layer 3, the first conductive layer 4, the second conductive layer 5 layers 6 on water-cooling head 1 surface; The thickness of described alumina insulating layer is 11-99 μ m.
Perhaps, a kind of integrated water-cooling directly seals great-power electronic element radiating device, and as shown in Figure 2, but it is provided with successively aluminium nitride insulating barrier 2, tantalum nitride layer 3, heat stress buffer layer 4, the first conductive layer 5, the second conductive layer 6 layers 7 on water-cooling head 1 surface; The thickness of described aluminium nitride insulating barrier is 400-800.
The manufacture method practical to this below in conjunction with specific embodiment is described further:
embodiment 1:
A kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device, comprises the following steps:
Form the alumina insulating layer of one deck 78 μ m on the one side of aluminium matter water-cooling head by anode oxidation method, magnetron sputtering last layer heat stress buffer layer again: tungsten and titanium alloy 300, then the magnetron sputtering argent 750, realize its conductionization, re-plating copper 50 μ m, the thickening conductive layer, the test conductive coefficient is 27W/mK.Then at the metallic copper coating surface, carry out pad pasting, etching processing, obtain needed circuit; Last chemical nickel plating/soak golden 10 μ m, can obtain heat abstractor.
embodiment 2:
A kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device, comprises the following steps:
Form the alumina insulating layer of one deck 80 μ m on the one side of aluminium matter water-cooling head by anode oxidation method, magnetron sputtering one deck heat stress buffer layer again: tungsten and titanium alloy 570, then the magnetron sputtering argent 800, realize its conductionization, re-plating copper 60 μ m, the thickening conductive layer, the test conductive coefficient is 26W/mK.Then at the metallic copper coating surface, carry out pad pasting, etching processing, obtain needed circuit; Last chemical nickel plating/soak golden 10 μ m, can obtain heat abstractor.
embodiment 3:
A kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device, comprises the following steps:
Form the alumina insulating layer of one deck 60 μ m on the one side of aluminium matter water-cooling head by anode oxidation method, evaporation last layer 400 tungsten heat stress buffer layer again, then the magnetron sputtering argent 600, realize its conductionization, re-plating copper 120 μ m, the thickening conductive layer, the test conductive coefficient is 23.5W/mK.Then at the metallic copper coating surface, carry out pad pasting, etching processing, obtain needed circuit; Last chemical plating stannum 15 μ m, can obtain heat abstractor.
embodiment 4:
A kind of integrated water-cooling directly seals the manufacture method of great-power electronic element radiating device, comprises the following steps:
Form the aluminium nitride insulating barrier of one deck 700 on the one side of aluminium matter water-cooling head with magnetron sputtering method, magnetron sputtering one deck 800 tantalum nitride layers again, evaporation last layer 400 tungsten heat stress buffer layer again, then the magnetron sputtering argent 600, realize its conductionization, re-plating copper 90 μ m, the thickening conductive layer, the test conductive coefficient is 25W/mK.Then at the metallic copper coating surface, carry out pad pasting, etching processing, obtain needed circuit; Last chemical plating stannum 15 μ m, can obtain heat abstractor.
The heat abstractor for preparing gained in above 4 embodiment toasts 20 minutes under 450 ℃, does not all occur peeling between the multiple layer metal layer, and performance reliability is high.
This practical heat abstractor is suitable for the heat radiation of high power device, because water-cooling head and electronic circuit board are united two into one, there is higher radiating effect, also without using heat-conducting glue, thereby avoid that conductive coefficient because of heat-conducting glue is too low causes the heat radiation bottleneck, and then affect heat conduction efficiency.
This practical heat abstractor is suitable for the heat radiation of high power device, comprises the LED heat radiation, and the heat radiation of electric automobile circuit is cooling integrated, the heat radiation of power-type inverter, IGBT heat radiation.
Claims (5)
1. an integrated water-cooling directly seals great-power electronic element radiating device, it is characterized in that: but it is provided with successively alumina insulating layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface; Perhaps, but it is provided with successively aluminium nitride insulating barrier, tantalum nitride layer, heat stress buffer layer, the first conductive layer, the second conductive layer layer on the water-cooling head surface.
2. a kind of integrated water-cooling according to claim 1 directly seals great-power electronic element radiating device, it is characterized in that: the thickness of described heat stress buffer layer is 300-850.
3. a kind of integrated water-cooling according to claim 1 directly seals great-power electronic element radiating device, it is characterized in that: the thickness of described the first conductive layer is 300-850.
4. a kind of integrated water-cooling according to claim 1 directly seals great-power electronic element radiating device, it is characterized in that: the thickness of described the second conductive layer is 0.05-1mm.
5. a kind of integrated water-cooling according to claim 1 directly seals great-power electronic element radiating device, it is characterized in that: but the thickness of described layer is 2-20 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203437745U CN203340507U (en) | 2013-06-14 | 2013-06-14 | An integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203437745U CN203340507U (en) | 2013-06-14 | 2013-06-14 | An integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203340507U true CN203340507U (en) | 2013-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203437745U Expired - Lifetime CN203340507U (en) | 2013-06-14 | 2013-06-14 | An integrated water-cooling directly-packaged heat dissipating device of a larger-power electronic component |
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| Country | Link |
|---|---|
| CN (1) | CN203340507U (en) |
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2013
- 2013-06-14 CN CN2013203437745U patent/CN203340507U/en not_active Expired - Lifetime
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| CX01 | Expiry of patent term |
Granted publication date: 20131211 |