CN202994834U - 用于vdmos器件可靠性测试的双列直插陶瓷底座 - Google Patents
用于vdmos器件可靠性测试的双列直插陶瓷底座 Download PDFInfo
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- CN202994834U CN202994834U CN 201220588508 CN201220588508U CN202994834U CN 202994834 U CN202994834 U CN 202994834U CN 201220588508 CN201220588508 CN 201220588508 CN 201220588508 U CN201220588508 U CN 201220588508U CN 202994834 U CN202994834 U CN 202994834U
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107422242A (zh) * | 2016-05-23 | 2017-12-01 | 北大方正集团有限公司 | 一种vdmos芯片的测试装置及方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107422242A (zh) * | 2016-05-23 | 2017-12-01 | 北大方正集团有限公司 | 一种vdmos芯片的测试装置及方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131231 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20131231 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130612 Termination date: 20151109 |
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EXPY | Termination of patent right or utility model |