CN202957287U - 半导体发光元件的封装结构 - Google Patents

半导体发光元件的封装结构 Download PDF

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CN202957287U
CN202957287U CN201220380426.0U CN201220380426U CN202957287U CN 202957287 U CN202957287 U CN 202957287U CN 201220380426 U CN201220380426 U CN 201220380426U CN 202957287 U CN202957287 U CN 202957287U
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semiconductor light
encapsulating structure
emitting elements
substrate
wiring board
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王冠捷
余宗翰
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Lextar Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本实用新型公开一种半导体发光元件的封装结构，其包括一基板、一线路板、一半导体发光元件以及一涂覆层。线路板具有一开口部，配置于基板上，且裸露出基板表面。半导体发光元件配置于开口部中所裸露的基板表面。涂覆层覆盖开口部的侧壁以及线路板表面。

Description

半导体发光元件的封装结构
技术领域
本实用新型涉及一种半导体元件的封装结构，且特别是涉及一种固态发光元件的封装结构。 
背景技术
发光二极管（Light-Emitting Diode，LED）主要是通过电能转化为光能的方式发光。发光二极管的主要的组成材料是半导体，为理想的固态发光元件。传统的发光二极管以平置的方式配置在散热基板上，以增加散热效能。通常，发光二极管完成封装之后，需经过高温烧烤步骤以及点亮测试，以确保发光二极管的封装品质。然而，发光二极管的封装结构常常因高温烧烤而出现亮度衰减的问题，有待进一步改良其结构。 
实用新型内容
本实用新型的目的在于提供一种半导体发光元件的封装结构，可避免介电层发生变质或黄化，以改善亮度衰减的问题。 
为达上述目的，本实用新型提出一种半导体发光元件的封装结构，包括一基板、一线路板设置于其上、一半导体发光元件以及一涂覆层。其中，线路板具有一开口部并裸露出基板表面，使得半导体发光元件配置于其上，且利用一涂覆层涂布线路板表面以及开口部的侧壁。 
该线路板包括有介电层以及包覆该介电层上、下表面的电路层。 
该涂覆层为一金属镀层或一硅胶层。该金属镀层的材质为银或镍。 
该电路层的材质为铜。该介电层的材质为玻纤树脂。 
该封装结构还包括多条导线，电连接于该半导体发光元件与该线路板之间。该封装结构还包括一粘着层，接合于该线路板与该基板之间。该封装结构还包括封胶层，覆盖该半导体发光元件。 
该半导体发光元件为发光二极管。 
本实用新型的优点在于，其在线路板开口部侧壁形成一涂覆层，以避免 线路板的侧壁暴露于高温环境中造成变质或黄化而使半导体发光元件的出光亮度衰减，进而改善半导体发光元件的出光效能。在本实用新型的一实施例中，涂覆层例如可为一电镀金属层（例如银或镍）或一高分子层（例如硅胶），其至少覆盖线路板开口部的侧壁，而半导体发光元件则设置于开口部中，以使半导体发光元件的亮度不会受到线路板变质的影响而衰减。此外，当涂覆层为一高反射性的金属层时，还可增加半导体发光元件的出光效率，以提高光通量。 
为了对本实用新型的上述及其他方面有更佳的了解，下文特举较佳实施例，并配合所附附图，作详细说明如下： 
附图说明
图1为本实用新型一实施例的半导体发光元件的封装结构的示意图。 
主要元件符号说明 
100：半导体发光元件的封装结构 
110：基板 
112：线路板 
120：介电层 
122：开口部 
130：电路层 
140：半导体发光元件 
142：导线 
150：涂覆层 
160：粘着层 
170：封胶层 
180：反射杯 
具体实施方式
以下是提出实施例进行详细说明，实施例仅用以作为范例说明，并非用以限缩本实用新型欲保护的范围。 
图1绘示依照本实用新型一实施例的半导体发光元件的封装结构的示意图。半导体发光元件的封装结构100包括一基板110、一介电层120、一由介电层120和包覆该介电层120的电路层130所构成的线路板112、一半导体发光元件140以及一涂覆层150。线路板112配置于基板110上，且线路板112具有一开口部122，裸露出基板110的表面。半导体发光元件140则是配置于开口部122所裸露的基板110表面上。涂覆层150则是形成于线路板112表面，并且可覆盖介电层120、电路层130及开口部122的侧壁。此外，线路板112与基板110之间更可配置一粘着层160，以接合线路板112与基板110。另外，半导体发光元件140例如以打线制作工艺的导线142电连接线路板112的电路层130，而二相邻的半导体发光元件140之间也可通过导线142彼此串联或并联，以组成一电路。另外，半导体发光元件140的上方更可形成一封胶层170，以覆盖半导体发光元件140及其周围的封装体。 
请参照图1，半导体发光元件140可由多个发光二极管组成。半导体发光元件140配置于高反射金属材质的基板110上，以使半导体发光元件140产生的热可经由基板110传递至外部。基板110的材质例如可为金属或金属化合物，较佳为铜质、铝质散热基板或是氧化铝、氮化铝等化合物或复合材。 
介电层120的材质例如为玻纤树脂，较佳为玻纤环氧树脂(Glass Epoxy Phenolic)或BT（Bismaleimide Triazine）树脂等，且介电层120的***覆盖一电路层130，例如为铜层，以组成一线路板112。在一实施例中，线路板112主要是由二金属层（未蚀刻）与一介电层120压合而成的金属基板，先以冲压或切割的方式移除部分金属层与介电层120，以形成一开口部122。接着，金属基板于开口部122的周围可形成一导电层以连接二金属层，并通过蚀刻的方式图案化金属层及导电层，以形成一电路层130于介电层120上。 
当完成上述的线路板112之后，线路板112可通过一粘着层160固定在基板110上。接着，形成一涂覆层150于开口部122的周围，使其至少覆盖开口部122的侧壁。如图1所示，涂覆层150形成于线路板112上，并覆盖开口部122的侧壁。涂覆层150除了以电镀方式所形成的金属层外，也可以喷涂的方式所形成的高分子层，例如为硅胶层，其附着于线路板112侧壁周围，以覆盖介电层120的侧壁。因此，本实用新型可通过在线路板112的开口部122侧壁增加一涂覆层150，以改善线路板112侧壁变质或黄化的问题。 
接着，将半导体发光元件140固定在基板110上，且位于开口部122中。 半导体发光元件140可通过打线制作工艺的导线142电连接电路层130（或连接电镀金属层），通过电路层130施加一电压至半导体发光元件140，可使其被电致发光。最后，填入封胶层170于反射杯180、线路板112及基板110所定义的范围内，以覆盖半导体发光元件140及其周围的封装体，可降低导线142断裂的风险，进而提高整体的良率。 

Claims (10)

1.一种半导体发光元件的封装结构，包括： 
基板； 
线路板，具有开口部，配置于该基板上，且裸露出该基板表面； 
半导体发光元件，配置于该开口部中所裸露的基板表面；以及 
涂覆层，覆盖该开口部的侧壁以及该线路板表面。 
2.如权利要求1所述的封装结构，其特征在于，该线路板包括有介电层以及包覆该介电层上、下表面的电路层。 
3.如权利要求2所述的封装结构，其特征在于，该涂覆层为一金属镀层或一硅胶层。 
4.如权利要求3所述的封装结构，其特征在于，该金属镀层的材质为银或镍。 
5.如权利要求2所述的封装结构，其特征在于，该电路层的材质为铜。 
6.如权利要求2所述的封装结构，其特征在于，该介电层的材质为玻纤树脂。 
7.如权利要求1所述的封装结构，其特征在于，该封装结构还包括多条导线，电连接于该半导体发光元件与该线路板之间。 
8.如权利要求1所述的封装结构，其特征在于，该封装结构还包括一粘着层，接合于该线路板与该基板之间。 
9.如权利要求1所述的封装结构，其特征在于，该封装结构还包括封胶层，覆盖该半导体发光元件。 
10.如权利要求1所述的封装结构，其特征在于，该半导体发光元件为发光二极管。 
CN201220380426.0U 2012-04-12 2012-08-02 半导体发光元件的封装结构 Expired - Lifetime CN202957287U (zh)

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CN115249445A (zh) * 2022-08-16 2022-10-28 广州市建研零碳新材料科技有限公司 一种超薄玻璃基显示模组的制作方法

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TWI506823B (zh) * 2013-09-16 2015-11-01 Lextar Electronics Corp 發光裝置之封裝結構及其製造方法
TWI713236B (zh) * 2013-10-07 2020-12-11 晶元光電股份有限公司 發光二極體組件及製作方法
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CN115249445A (zh) * 2022-08-16 2022-10-28 广州市建研零碳新材料科技有限公司 一种超薄玻璃基显示模组的制作方法

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