CN101546737B - 化合物半导体元件的封装结构及其制造方法 - Google Patents

化合物半导体元件的封装结构及其制造方法 Download PDF

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CN101546737B
CN101546737B CN200810086311A CN200810086311A CN101546737B CN 101546737 B CN101546737 B CN 101546737B CN 200810086311 A CN200810086311 A CN 200810086311A CN 200810086311 A CN200810086311 A CN 200810086311A CN 101546737 B CN101546737 B CN 101546737B
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conducting film
groove
crystal grain
film
compound semiconductor
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CN101546737A (zh
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陈滨全
林升柏
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Zhanjing Technology Shenzhen Co Ltd
Advanced Optoelectronic Technology Inc
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Abstract

本发明揭示一种化合物半导体元件的封装结构及其制造方法，该封装结构包含薄膜基板、晶粒、至少一个金属导线及透明封胶材料。该薄膜基板包含第一导电膜、第二导电膜及绝缘介电材料。该晶粒固定于该第一导电膜的表面，并通过该金属导线与该第一导电膜或该第二导电膜电连接。该透明封胶材料覆盖于该第一导电膜、该第二导电膜及该晶粒上。该第一导电膜及该第二导电膜相对于该透明封胶的表面分别作为电极，该绝缘介电材料介于该第一导电膜及该第二导电膜之间。本发明能够使元件的厚度更薄而节省所占空间，并解决散热不佳的问题。

Description

化合物半导体元件的封装结构及其制造方法
技术领域
本发明涉及一种化合物半导体元件的封装结构及其制造方法，尤其涉及一种光电半导体元件的薄型封装结构及其制造方法。
背景技术
由于光电元件中发光二极管(light emitting diode；LED)有体积小、发光效率高及寿命长等优点，因此被认为是第二代绿色节能照明的最佳光源。另外液晶显示器的快速发展及全彩荧幕的流行趋势，使白光系发光二极管除了应用于指示灯及大型显示屏幕等用途外，更切入广大的消费性电子产品，例如：手机及个人数字助理(PDA)。
图1为公知表面粘着(SMD)元件的发光二极管元件的剖面示意图。发光二极管晶粒12通过固晶胶11固定于绝缘层13c上N型导电铜箔13b的表面，并通过金属导线15与P型导电铜箔13a和N型导电铜箔13b电相连，其中P型导电铜箔13a、N型导电铜箔13b及绝缘层13c构成具有电路的基板13。另外，透明封胶材料14覆盖于基板13、金属导线15及晶粒12上，可以保护整个发光二极管元件10不受环境及外力的破坏。
发光二极管元件10使用一般印刷电路板作为基板13，因此其整体厚度因受限于基板13中绝缘层13c厚度而无法更薄。但，消费性电子产品趋向于轻、薄、短、小的外型，因此其内部的各元件或外部壳体都需要小型化。另一方面，绝缘层13c多为散热性较差的树脂材料制成，因此不利于高功率发光化合物半导体元件作为传导热量的散热途径。
图2为美国公开专利第US20040090756号公开高集成封装结构的剖面示意图。此种结构在暂时基材上涂布绝缘层，并且在绝缘层上设计并布局出需要的线路。接着，发光二极管晶粒221、222被粘着在基板23上，并利用打线技术(或芯片倒装(flip chip))技术将晶粒221、222与基板23内部导线通过金属导线25相互导通。晶粒221、222上方利用模压(molding)工艺将传统的环氧树脂(epoxy)覆盖在晶粒221、222上。为了要使整体芯片达到薄型化，把暂时基材利用激光或紫外光(UV)光照射使其与绝缘层分离，并在预留的焊盘上粘着锡球26，如此即可达到高集成度与薄型化的目的。但此工艺较为复杂，并且亦会增加成本。
综上所述，市场上亟需一种薄型光电化合物半导体元件，除了元件的厚度要更薄而能节省所占空间外，并且还要改善散热不佳的问题，将更有利应用于高功率元件的制作。
发明内容
本发明提供一种化合物半导体元件的封装结构及其制造方法，该半导体元件将外部电极或接点直接露出于封胶材料，而不需要印刷电路板介于晶粒及外部电极间传递电气信号，因此可改善散热不佳的问题。
本发明提供一种超薄型半导体元件的封装结构及其制造方法，由于使用薄型基板或金属膜层，因此此元件的厚度可以更薄而能节省所占空间。
为达到上述目的，本发明揭示一种化合物半导体元件的封装结构，其包含薄膜基板、晶粒及透明封胶材料。该薄膜基板包含第一导电膜、第二导电膜及绝缘介电材料。该晶粒固定于该第一导电膜的表面。该透明封胶材料覆盖于该第一导电膜、该第二导电膜及该晶粒上。该第一导电膜及该第二导电膜相对于该透明封胶的表面分别作为电极，该绝缘介电材料介于该第一导电膜及该第二导电膜之间。
该薄膜基板的厚度优选为20～50μm。
该绝缘介电材料为氧化硅(SiO)、氮化硅(SiN)、氮氧化硅(SiON)、氧化钽(TaO)、氧化铝(AlO)、氧化钛(TiO)、氮化铝(AlN)、氮化钛(TiN)、环氧树脂(epoxy)、硅树脂(silicone)或高分子绝缘材料。
该晶粒可为发光二极管晶粒、激光二极管或光感测晶粒。
该化合物半导体元件的封装结构还包含至少一个电连接该晶粒与该薄膜基板的金属导线。该第一导电膜还包含可供该金属导线熔接的第一打线凹槽。此外，该第二导电膜还包含可供该金属导线熔接的第二打线凹槽。
该化合物半导体元件的封装结构还包含多个电连接该晶粒与该薄膜基板的凸块。
该第一导电膜还包含固晶凹槽，该晶粒固定于该固晶凹槽内。该固晶凹槽内覆盖反光层。
该化合物半导体元件的封装结构还包含叠置于该薄膜基板上的被图案化的绝缘材料层，其中该绝缘材料层包括供该晶粒固定的固晶凹槽及至少一个可供该金属导线熔接的打线凹槽。
本发明还揭示一种化合物半导体元件封装结构的制造方法，包含下列步骤：提供薄膜基板，其包括第一导电膜、第二导电膜及绝缘介电材料；将晶粒固接于该第一导电膜上，使得该晶粒的正极电连接至该第一导电膜，而该晶粒的负极电连接至该第二导电膜；以及将透明胶材包覆该晶粒。
该薄膜基板由下列步骤制成：提供薄板；在该薄板上形成至少一个沟槽以分隔该第一导电膜及该第二导电膜；以及在该沟槽中填入绝缘介电材料。
该沟槽利用钻孔工艺、蚀刻工艺或是金属冲压工艺而形成。
该制造方法还包含于该第一导电膜形成固晶凹槽的步骤。
该制造方法还包含于该第一导电膜及该第二导电膜形成多个打线凹槽的步骤，其中该打线凹槽为可供至少一个金属导线熔接之处。
该制造方法还包含于该薄膜基板上叠置被图案化的绝缘材料层，其中该绝缘材料层包括供该晶粒固定的固晶凹槽及可供至少一个金属导线熔接的多个打线凹槽。
该将该晶粒固接于该薄膜基板的步骤包含以打线接合或是芯片倒装接合方式将该晶粒电连接至该薄膜基板。
该固晶凹槽或该打线凹槽通过光刻蚀刻、电铸工艺或是钻孔工艺而形成。
本发明能够使元件的厚度更薄而节省所占空间，并解决散热不佳的问题。
附图说明
图1为公知表面粘着(SMD)元件的发光二极管元件的剖面示意图；
图2为美国公开专利第US20040090756号公开的高集成封装结构的剖面示意图；
图3A-图3C为本发明薄膜基板的制造方法的步骤示意图；
图4A为本发明化合物半导体元件封装结构的剖面示意图；
图4B为图4A的化合物半导体元件的俯视图；
图5为本发明另一实施例化合物半导体元件封装结构的剖面示意图；
图6为本发明再一实施例化合物半导体元件封装结构的剖面示意图；
图7为本发明再一实施例化合物半导体元件封装结构的剖面示意图；
图8为本发明再一实施例化合物半导体元件封装结构的剖面示意图；以及
图9A-图9D为本发明采用电铸工艺形成固晶凹槽或打线凹槽的示意图。
其中，附图标记说明如下：
10  发光二极管元件
12、221、222  晶粒
13a  P型导电铜箔
13c  绝缘层
15  金属导线
23  基板
26  锡球
31、31′  第一导电膜
33  沟槽
35  绝缘介电材料
37  金属层
40  化合物半导体元件
44  金属导线
47  固晶胶
50、60、70、80  化合物半导体元件
54  凸块
411  固晶凹槽
413、421  打线凹槽
具体实施方式
图3A-图3C为本发明薄膜基板的制造方法的步骤示意图。如图3A所示，提供厚度为20～50μm的薄板34，例如：铜箔或传导好的金属薄膜。再利用钻孔工艺、蚀刻工艺或是金属冲压等工艺在薄板34上形成沟槽33，通过该沟槽33使两侧的第一导电膜31及第二导电膜32相互无法导通，亦即电独立，如图3B所示。并且在沟槽33中填入绝缘介电材料35就可完成薄膜基板30的制作，例如：氧化硅(SiO)、氮化硅(SiN)、氮氧化硅(SiON)、氧化钽(TaO)、氧化铝(AlO)、氧化钛(TiO)、氮化铝(AlN)、氮化钛(TiN)、环氧树脂(epoxy)、硅树脂(silicone)或高分子绝缘材料等，由此可增加第一导电膜31及第二导电膜32间绝缘性与薄膜基板30的支撑刚性，如图3C所示。
图4A为本发明化合物半导体元件封装结构的剖面示意图。化合物半导体元件40利用固晶或黏晶(die bonding)技术把化合物半导体晶粒43粘着在薄膜基板30的第一导电膜31上，亦即晶粒43通过固晶胶47固定于第一导电膜31的表面。该化合物半导体晶粒43可为发光二极管晶粒、激光二极管晶粒或光感测晶粒。再经由金属导线44使晶粒43与薄膜基板30电连接，如此薄膜基板30即成为晶粒43及金属导线44的封装载体。最后再利用模压工艺使透明封胶材料46覆盖晶粒43、金属导线44及薄膜基板30上，从而达到防湿气与保护的效果，该透明胶材料46可为环氧树脂(epoxy)或是硅氧烷(silicone)。
图4B为图4A的化合物半导体元件的俯视图。使透明封胶材料46局部被移除，可以更清楚看到晶粒43、金属导线44及薄膜基板30的连结关系，两根金属导线44分别自晶粒43表面向第一导电膜31及第二导电膜32延伸并连接。
图5为本发明另一实施例化合物半导体元件封装结构的剖面示意图。化合物半导体元件50利用芯片倒装工艺将晶粒43通过凸块(bump)54固定在薄膜基板30上。与图4A不同，该晶粒43的主动面翻转朝向薄膜基板30，并利用锡球与晶粒43上的焊盘相接合而成为凸块54，再经过回焊后则凸块54与薄膜基板30会因锡膏融熔后又固化而电导通。最后再利用模压工艺使透明封胶材料46覆盖晶粒43及薄膜基板30上，从而达到防湿气与保护的效果。本实施例的优点为电流路径较短及散热佳，相比前一个实施例可以减少金属导线的线弧高度(loop height)。
图6为本发明再一实施例化合物半导体元件封装结构的剖面示意图。本实施例可更进一步减少封装结构的厚度与增加封装元件的亮度，其在薄膜基板30a的第一导电膜31′上形成固晶凹槽411，并且在固晶凹槽411的四周侧壁与底部沉积反光层412。可以利用光刻蚀刻、电铸工艺或是钻孔工艺来形成该固晶凹槽411。晶粒43粘着在该固晶凹槽411的底部，如此可形成一种类似杯状反射腔体。该晶粒43发出的侧向光线能够有效的经由反光层412朝向上方反射，以增加化合物半导体元件封60的发光亮度。本实施例另一优点为：当晶粒43被放置在固晶凹槽411中，对于利用金属导线44使晶粒43与薄膜基板30a间电连接，将会有效降低金线的线弧高度，而可以更加达到整体封装结构的薄型化。
图7为本发明再一实施例化合物半导体元件封装结构的剖面示意图。相较于上述实施例，本实施例可再进一步减少封装结构的厚度。在薄膜基板30b的第一导电膜31″上形成打线凹槽413，可提供金属导线44第二焊点的熔接位置；同样，第二导电膜32′上亦形成打线凹槽421，可提供另一金属导线44第二焊点的熔接位置。由于金属导线44第二焊点的位置下降，因此可减少化合物半导体元件封70的封装结构的厚度。
前述实施例采用光刻蚀刻、电铸工艺或是钻孔工艺来形成固晶凹槽或打线凹槽，亦可以在薄膜基板30上形成图案化的绝缘材料层36，其利用光刻蚀刻在绝缘层36上形成的固晶凹槽411及打线凹槽413、421，如图8所示。如此不仅可减少化合物半导体元件封80的封装结构的厚度，还可以避免连接第二导电膜32的金属导线44与第一导电膜31间有不当接触而短路。
图9A-图9D为本发明采用电铸工艺形成固晶凹槽或打线凹槽的示意图。在薄膜基板30上形成图案化的绝缘材料层36′，例如：光致抗蚀剂材料。利用电铸工艺在第一导电膜31及第二导电膜32露出的表面成长金属层37，再去除缘材料层36′(例如：去除光致抗蚀剂步骤)以形成固晶凹槽411及打线凹槽413、421。
本发明的技术内容及技术特点已揭示如上，然而本领域技术人员仍可能基于本发明的教示及揭示而作出种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并为所附的权利要求书所涵盖。

Claims (9)

1.一种化合物半导体元件的封装结构，包含：
薄膜基板，该薄膜基板上形成有将该薄膜基板划分为第一导电膜、第二导电膜的沟槽，该沟槽电隔离该第一导电膜与该第二导电膜，该沟槽内填入有绝缘介电材料，其中该绝缘介电材料介于该第一导电膜与该第二导电膜之间，该第一导电膜包括可供金属导线熔接的第一打线凹槽，该第二导电膜包含可供金属导线熔接的第二打线凹槽；
晶粒，固定于该第一导电膜的表面并通过金属导线分别电连接至第一导电膜的第一打线凹槽以及第二导电膜的第二打线凹槽；以及
透明封胶材料，覆盖于该第一导电膜和该第二导电膜的邻近晶粒的一侧并覆盖该晶粒。
2.根据权利要求1所述的化合物半导体元件的封装结构，其中该薄膜基板的厚度为20～50μm，该绝缘介电材料为氧化硅、氮化硅、氮氧化硅、氧化钽、氧化铝、氧化钛、氮化铝、环氧树脂或硅树脂。
3.根据权利要求1所述的化合物半导体元件的封装结构，其中该薄膜基板的厚度为20～50μm，该绝缘介电材料为氧化硅、氮化硅、氮氧化硅、氧化钽、氧化铝、氧化钛、氮化铝或高分子绝缘材料。
4.根据权利要求1所述的化合物半导体元件的封装结构，其中该晶粒为发光二极管晶粒、激光二极管或光感测晶粒。
5.根据权利要求1所述的化合物半导体元件的封装结构，其中该第一导电膜还包含固晶凹槽，该晶粒固定于该固晶凹槽内，该固晶凹槽内覆盖反光层。
6.一种化合物光电元件封装结构的制造方法，其包含步骤：
提供薄膜基板，其上形成有将该薄膜基板划分为第一导电膜、第二导电膜的沟槽，该沟槽电隔离该第一导电膜与该第二导电膜，该沟槽内填入有绝缘介电材料，该第一导电膜包括可供金属导线熔接的第一打线凹槽，该第二导电膜包含可供金属导线熔接的第二打线凹槽；
将晶粒固接于该第一导电膜上，使得该晶粒的正极通过金属导线电连接至该第一导电膜的第一打线凹槽，而该晶粒的负极通过金属导线电连接至该第二导电膜的第二打线凹槽；以及
将一透明胶材包覆该晶粒以及该第一导电膜和该第二导电膜的邻近晶粒的一侧。
7.根据权利要求6所述的化合物光电元件封装结构的制造方法，其中该沟槽利用钻孔工艺、蚀刻工艺或是金属冲压工艺所形成。
8.根据权利要求6所述的化合物光电元件封装结构的制造方法，其还包含于该第一导电膜形成固晶凹槽的步骤，该晶粒固定于该固晶凹槽内。
9.根据权利要求8所述的化合物光电元件封装结构的制造方法，其中该固晶凹槽或该第一和第二打线凹槽通过光刻蚀刻、电铸工艺或是钻孔工艺所形成。
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