CN202120903U - Half-bridge power module - Google Patents
Half-bridge power module Download PDFInfo
- Publication number
- CN202120903U CN202120903U CN2011201674075U CN201120167407U CN202120903U CN 202120903 U CN202120903 U CN 202120903U CN 2011201674075 U CN2011201674075 U CN 2011201674075U CN 201120167407 U CN201120167407 U CN 201120167407U CN 202120903 U CN202120903 U CN 202120903U
- Authority
- CN
- China
- Prior art keywords
- power terminal
- power
- bridge
- pin
- insulated substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model discloses a large-power half-bridge power module, which comprises a heat dissipation base plate, insulation base plates and power terminals. The heat dissipation base plate is provided with at least three insulation base plates, and the power terminals comprise a first power terminal, a second power terminal and a third power terminal which are arranged parallel to each other to form a half-bridge structure. One ends of the first power terminal, the second power terminal and the third power terminal are all connected with the three insulation base plates, and a certain insulation gap exists between the second power terminal and the third power terminal. The half-bridge power module has the advantages of being high in power and efficiency, low in production cost and good in reliability.
Description
Technical field
The utility model relates to a kind of power module assembly, a kind of specifically half-bridge power module.
Background technology
Power model IGBT (insulated gate bipolar transistor) module is widely used in frequency converter, welding machine, UPS, solar energy and wind energy field.In traditional high power module encapsulation, in order to reach high reliability, need the reflow soldering power terminal, signal lead needs coiling, needs to irritate epoxy resin.But this power model exists technology complicated, the shortcoming that production cost is higher.
Summary of the invention
The purpose of the utility model is to design a kind of powerful half-bridge power module.
The utility model will solve is that the production technology that exists of existing power model is complicated, the production cost problem of higher.
For realizing the purpose of the utility model, the technical scheme that the utility model adopts is:
It comprises heat-radiating substrate, insulated substrate and power terminal; At least comprise three insulated substrates on the heat-radiating substrate; Power terminal comprises first power terminal, second power terminal and the 3rd power terminal; First power terminal, second power terminal and the 3rd power terminal formation half-bridge structure that is arranged in parallel; One end of first power terminal, second power terminal and the 3rd power terminal all is connected with described three insulated substrates, is provided with certain insulation spacing between second power terminal and the 3rd power terminal.
The utility model has the advantages that: the one, power is high, efficient is high, production cost is low and good reliability.The 2nd, the utility model provides the very half-bridge module of symmetry of a kind of simple and economical electric current dynamic assignment.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Fig. 2 is the circuit topological structure figure of the utility model.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the utility model is further described.
As shown in the figure, the utility model comprises and comprises three insulated substrates and three power terminals on heat-radiating substrate 2, the heat-radiating substrate 2 at least.Described these three insulated substrates comprise insulated substrate 5, insulated substrate 7, insulated substrate 9.Described three power terminals comprise first power terminal 20, second power terminal 1 and the 3rd power terminal 18.First power terminal 20, second power terminal 1 and the 3rd power terminal 18 are arranged in parallel and constitute half-bridge electricity structure.One end of first power terminal 20, second power terminal 1 and the 3rd power terminal 18 all with described insulated substrate 5, insulated substrate 7, insulated substrate 9.Between second power terminal 1 and the 3rd power terminal 18 the insulation spacing is arranged.Insulated substrate 9 is provided with igbt chip 13 and diode chip for backlight unit 14.
Second power terminal 1 is provided with three pins, is respectively pin 10, pin 6, pin 3, and pin 3, pin 6, pin 10 are connected with insulated substrate 5, insulated substrate 7, insulated substrate 9 respectively.Second power terminal is connected with three insulated substrates respectively through these three pins.
The 3rd power terminal 18 is provided with three pins, is respectively pin 11, pin 8, pin 4, and pin 4, pin 8, pin 11 are connected with insulated substrate 5, insulated substrate 7, insulated substrate 9 respectively.
Insulated substrate 5, insulated substrate 7, insulated substrate 9 are distributed on the heat-radiating substrate 2 side by side.
Insulated substrate 5, insulated substrate 7, insulated substrate 9 usefulness ceramic materials are processed.
Heat-radiating substrate 2 is the heat-radiating substrates that are flat, processes with copper or AiSiC or CuSiC.The thickness of heat-radiating substrate is 3mm-5mm.
Described insulated substrate 5, insulated substrate 7, insulated substrate 9 and first power terminal 20, second power terminal 1 and the 3rd power terminal 18 be connected to refined lead welding or supersonic bonding.
Copper is covered in insulated substrate 5, insulated substrate 7, insulated substrate 9 both sides, between the thickness 0.1-0.3mm.
In described second power terminal 1 of the utility model and the 3rd power terminal 18, one of them is an electronegative potential, and another is a high potential.
Power terminal one end of the utility model connects insulated substrate, and the other end is drawn and connected outside bus.
Specify the assembling mode of the utility model at present:
At first be bonded to igbt chip 13 and diode chip for backlight unit 14 on the insulated substrate 9, bonding mode can be that refluxing soft soldering connects, or Diffusion Welding, or the silver powder crimping.Then coupling together with bonding aluminum steel 15, bonding aluminum steel 12 between igbt chip 13, diode chip for backlight unit 14 and the insulated substrate 9.Be bonded to insulated substrate 9, insulated substrate 5, insulated substrate 7 on the heat-radiating substrate 2, the mode of using supersonic bonding at last is connected respectively to first power terminal 20, second power terminal 1, the pin 16 of the 3rd power terminal 18, pin 17, pin 19, pin 10, pin 6, pin 3, pin 11, pin 8, pin 4 on insulated substrate 9, insulated substrate 5, the insulated substrate 7 respectively again.
Fig. 2 is the circuit topological structure figure of Fig. 1.Among Fig. 2 40,30,20 be the 3rd power terminal 18, first power terminal 20 and second power terminal 1 in the corresponding diagram 1 respectively.Pin 4 among Fig. 1, pin 8, pin 11; Pin 16, pin 17, pin 19; Pin 3, pin 3, pin 10 are distinguished 41,42,43 of corresponding diagram 2; 31,32,33; 21,22,23.
Claims (9)
1. a half-bridge power module comprises heat-radiating substrate, insulated substrate and power terminal, it is characterized in that on heat-radiating substrate, comprising at least three insulated substrates, and power terminal comprises first power terminal, second power terminal and the 3rd power terminal; First power terminal, second power terminal and the 3rd power terminal formation half-bridge structure that is arranged in parallel; One end of first power terminal, second power terminal and the 3rd power terminal all is connected with described three insulated substrates, is provided with spacing between second power terminal and the 3rd power terminal.
2. a kind of half-bridge power module according to claim 1 is characterized in that first power terminal is provided with three pins, and first power terminal is connected with three insulated substrates respectively through these three pins.
3. a kind of half-bridge power module according to claim 1 is characterized in that second power terminal is provided with three pins, and second power terminal is connected with three insulated substrates respectively through these three pins.
4. a kind of half-bridge power module according to claim 1 is characterized in that the 3rd power terminal is provided with three pins, and the 3rd power terminal is connected with three insulated substrates respectively through these three pins.
5. a kind of half-bridge power module according to claim 1 is characterized in that three insulated substrates are distributed on the heat-radiating substrate side by side.
6. a kind of half-bridge power module according to claim 1 is characterized in that insulated substrate processes with ceramic material.
7. a kind of half-bridge power module according to claim 1 is characterized in that heat-radiating substrate is the heat-radiating substrate that is flat, processes with copper or AiSiC or CuSiC.
8. a kind of half-bridge power module according to claim 1, the thickness that it is characterized in that heat-radiating substrate is 3mm-5mm.
9. a kind of half-bridge power module according to claim 1 is characterized in that the insulated substrate both sides cover copper, between the thickness 0.1-0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201674075U CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201674075U CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202120903U true CN202120903U (en) | 2012-01-18 |
Family
ID=45461944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201674075U Expired - Lifetime CN202120903U (en) | 2011-05-24 | 2011-05-24 | Half-bridge power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202120903U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208403A (en) * | 2011-05-24 | 2011-10-05 | 嘉兴斯达半导体有限公司 | Half-bridge power module |
| CN103779341A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | High-power half-bridge module |
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
-
2011
- 2011-05-24 CN CN2011201674075U patent/CN202120903U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208403A (en) * | 2011-05-24 | 2011-10-05 | 嘉兴斯达半导体有限公司 | Half-bridge power module |
| CN103779341A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | High-power half-bridge module |
| CN103780066A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
| CN103779341B (en) * | 2014-01-24 | 2016-07-27 | 嘉兴斯达微电子有限公司 | A kind of high-power half bridge module |
| CN103780066B (en) * | 2014-01-24 | 2017-05-03 | 嘉兴斯达微电子有限公司 | Four-quadrant insulated gate bipolar transistor module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Jiaxing City, Zhejiang province 314000 Nanhu District Branch Road No. 988 (Jiaxing city) Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Central South Road Furun Nanhu District of Jiaxing city of Zhejiang Province east three layer 314000 Patentee before: Starpower Semiconductor Ltd. |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Half-bridge power module Effective date of registration: 20151209 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20161212 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Half-bridge power module Effective date of registration: 20161216 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180904 Granted publication date: 20120118 Pledgee: Agricultural Bank of China Limited by Share Ltd Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120118 |