CN1938872B - 包括在其中具有光学元件的柔性膜的半导体发光器件 - Google Patents
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Abstract
半导体发光器件包括具有面的基板、在该面上在其中包括光学元件的柔性膜、以及半导体发光元件,该半导体发光元件在基板和柔性膜之间并且被配置用以通过光学元件发射光。该面可以在其中包括腔,并且半导体发光元件可以在腔中。柔性膜在该面上延伸超出腔,且光学元件叠置在腔上面。
Description
技术领域
本发明涉及半导体发光器件及其制造方法,更尤其涉及半导体发光器件的封装和封装方法。
背景技术
半导体发光器件,例如发光二极管(LED)或激光二极管,广泛地用于许多应用。正如本领域技术人员公知的,半导体发光器件包括具有一个或多个半导体层的半导体发光元件,配置该一个或多个半导体层以一旦给其加电就发射相干和/或非相干光。还已知,一般封装半导体发光元件以提供用于半导体发光器件的外部电连接、热沉、透镜或波导、环境保护和/或其它功能。通过用穹形透明塑料壳至少部分地围绕半导体发光器件,可至少部分地提供封装。
例如,已知对于半导体发光器件提供两件式(two-piece)封装,其中半导体发光元件安装在例如氧化铝、氮化铝和/或其它材料的基板上,其包括其上的电迹线,以为半导体发光元件提供外部连接。第二基板,其例如可以是镀银的铜,例如利用胶合剂安装在第一基板上,围绕半导体发光元件。透镜可放置在半导体发光元件上方的第二基板上。在转让给本发明的受让人的、在2003年5月27日提交的标题为Power Surface Mount Light Emitting Die Package的Loh的中请序列号No.10/446,532中描述了如上所述的具有两件式封装的发光二极管,在此并入其公开的全部内容作为参考。
常常希望将磷光体并入半导体发光器件中,以增强在特定频带中发射的辐射和/或将至少一些辐射转换到另一频带。可利用许多常规技术将磷光体包括在半导体发光器件中。在一种技术中,将磷光体涂敷在塑料壳内部和/或外部。在其它技术中,例如利用电泳沉积,将磷光体涂敷在半导体发光器件本身上。在另外的技术中,可将一滴材料例如在其中包含磷光体的环氧树脂放置在塑料壳内部、半导体发光器件上和/或该器件和壳之间。该技术可称作为“圆顶封装体(glob top)”。 磷光体涂敷还可并入折射率匹配材料和/或可提供单独的折射率匹配材料。例如,在美国专利6,252,254;6,069,440;5,858,278;5,813,753;5,277,840;和5,959,316中描述了采用磷光体涂敷的LED。
不幸地是,用于半导体发光器件的封装可能是昂贵的,且在一些情况下,比半导体发光元件本身更昂贵。而且,该装配工艺也可能是昂贵的、耗时的和/或容易发生故障。
发明内容
本发明的一些实施例提供半导体发光器件,其包括具有面的基板、在该面上在其中包括光学元件的柔性膜、以及半导体发光元件,该半导体发光元件在基板和柔性膜之间并且被配置用以通过光学元件发射光。在一些实施例中,光耦合介质,例如光凝胶,提供在光学元件和半导体发光元件之间。在一些实施例中,该面在其中包括腔,并且半导体发光元件在该腔中。柔性膜在该面上延伸超出腔,且光学元件叠置在腔上面。在一些实施例中,光耦合介质提供在腔中。根据本发明的各个实施例,可通过将半导体发光元件安装在基板面上以及将在其中包括光学元件的柔性膜附着到基板面上来装配半导体发光器件,以便在操作中半导体发光元件通过光学元件发射光。光耦合介质可放置在半导体发光元件和光耦合元件之间。
可根据本发明的各个实施例提供许多不同结构的光学元件。在一些实施例中,光学元件包括(即包含)透镜。在其它实施例中,光学元件包括棱镜。在其它实施例中,柔性膜包括邻近基板的第一面和远离基板的第二面,并且光学元件包括第一面上的第一光学元件和第二面上的第二光学元件,设置该两者使得发光元件通过第一光学元件和第二光学元件发射光。在一些实施例中,光学元件包括磷光体和/或其它光学发射增强和/或转换元件。在另外的实施例中,光学元件包括光散射元件。还可提供这些和/或其它光学元件的组合和子组合。而且,在这些实施例的任一个中,光耦合介质可提供在光学元件和半导体发光元件之间。
根据本发明的各个实施例,还可提供柔性膜的许多结构。例如,在一些实施例中,叠置在腔上面的柔性膜的至少一部分对于光是透明的,并且在该面上延伸超出腔的柔性膜的至少一部分对于光是不透明 的。在其它实施例中,叠置在腔上面的柔性膜的至少一部分包括第一材料,并且在该面上延伸超出腔的柔性膜的至少一部分包括第二材料。在另外的实施例中,半导体发光元件包括朝着腔中的柔性膜延伸并且接触该柔性膜的线路,并且柔性膜包括在腔中的电连接至该线路的透明导体。还可提供柔性膜的这些和/或其它结构的组合和子组合。
在其它实施例中,还提供附着元件,其被配置用以使柔性膜和基板彼此附着。可以使用许多常规的附着技术来提供附着元件。
可配置本发明的一些实施例以将磷光体并入半导体发光器件中。在一些实施例中,磷光体提供在透镜和半导体发光元件之间的柔性膜上。在其它实施例中,透镜包括邻近半导体发光元件的凹形内表面,并且磷光体包括在该凹形内表面上的共形磷光层。在另外的实施例中,光学元件包括叠置在腔上面并且远离该腔突出的透镜,柔性膜进一步包括在透镜和发光元件之间朝着腔突出的突出元件,并且在突出元件上提供共形的磷光体涂层。还可提供磷光体的这些和/或其它结构的组合和子组合。而且,在这些实施例的任一个中,可在磷光体和半导体发光元件之间提供光耦合介质。
在本发明的另外的实施例中,半导体发光元件包括朝着柔性基板延伸的线路。在这些实施例的一些中,光学元件包括棱镜,其被配置用以减小从半导体发光元件发射的光通过线路的遮蔽。
根据本发明的各个实施例,可在半导体发光器件中并入多个半导体发光元件和/或光学元件。每个半导体发光元件可被包括在其自身单独的腔中,和/或多个半导体发光元件可被包括在单个腔中。而且,在一些实施例中,对于每个光学元件,可在柔性膜上包括相同的磷光体。在其它实施例中,可使用不同的磷光体。例如,可配置第一磷光层和第一半导体发光元件以产生红光,可配置第二磷光层和第二半导体发光元件以产生蓝光,以及可配置第三磷光层和第三半导体发光元件以产生绿光。还可提供这些和/或其它多个半导体发光元件和/或多个光学元件的组合和子组合。最后,根据本发明的各个实施例,可提供这些和/或其它光学元件、柔性膜、磷光体和/或多个元件的组合和子组合。
附图说明
图1是根据本发明各个实施例的半导体发光器件的截面图。
图2-12是根据本发明各个实施例的半导体发光器件的截面图。
图13是根据本发明一些实施例的半导体发光器件的透视图。
具体实施方式
现在将参考附图更充分地描述本发明,其中示出了本发明的实施例。然而,本发明可体现为多种不同的形式,并且不应当解释为受限于在此列出的实施例。更确切地说,提供这些实施例以便该公开将是彻底的和完整的,并且将本发明的范围完全地传达给本领域技术人员。在图中,为了清楚起见,可放大各层和区域的尺寸和相对尺寸。在全文中类似的数字表示类似的元件。
应当理解,当元件例如层、区域或基板被称为在另一元件“上”时,其可以直接在另一元件上或者还可存在***元件。应当理解,如果部分元件,例如表面,被称为“内部”,则其比元件的其它部分更远离器件的外部。此外,在此可使用相对术语例如“在......之下”或“叠置于......上面”,来描述如图所示的一层或区域到另一层或区域相对于基板或基底层的关系。应当理解,这些术语旨在包含除了图中描绘的定向之外的器件的不同定向。最后,术语“直接”意味着不存在***元件。如在此使用的,术语“和/或”包括相关列出的项目中的一个或多个的任一和所有组合。
应当理解,尽管在此可使用术语第一、第二等来描述各种元件、部件、区域、层和/或部分,但这些元件、部件、区域、层和/或部分不应当被这些术语限制。这些术语仅用于区分一个元件、部件、区域、层和/或部分与另一区域、层和/或部分。因此,下面论述的第一区域、层或部分可被称为第二区域、层或部分,并且在不脱离本发明的教导的情况下第二也是类似的。
图1是根据本发明各个实施例的半导体发光器件的截面图。参考图1,这些半导体发光器件100包括具有面110a的基板110、在面110a上在其中包括光学元件130的柔性膜120、以及在基板110和柔性膜120之间的并且被配置用以通过光学元件发射光160的半导体发光元件140。附着元件150可用于使柔性膜120和基板110彼此附着。
仍参考图1,基板110可包括氧化铝、氮化铝、金属和/或常规地 用于将半导体发光元件安装于其上的其它材料。在其它实施例中,基板110可以是固体金属块,如在转让给本发明的受让人的、Negley等人在2003年9月9日提交的、标题为Solid Metal Block MountingSubstrates for Semiconductor Light Emitting Devices,andOxidizing Methods for Fabricating Same的共同未决的申请序列号No.10/659,108中所述的,在此并入其公开的全部内容作为参考。基板110的设计对于本领域技术人员是公知的并且不需要在此进一步描述。
半导体发光元件140可包括发光二极管、激光二极管和/或其它半导体器件,其包括一个或多个半导体层,其可包括硅、碳化硅、氮化镓和/或其它半导体材料,基板,其可包括蓝宝石、硅、碳化硅和/或其它微电子基板,以及一个或多个接触层,其可包括金属和/或其它导电层。在一些实施例中,可提供紫外线、蓝色和/或绿色LED。半导体发光器件140的设计和制造对于本领域技术人员是公知的并且不需要在此详细地描述。
例如,发光元件140可以是氮化镓基LED或制造在碳化硅基板上的激光器,例如由North Carolina,Durham的Cree公司制造和出售的那些器件。本发明可适合与LED和/或激光器一起使用,如在美国专利No.6,201,262;6,187,606;6,120,600;5,912,477;5,739,554;5,631,190;5,604,135;5,523,589;5,416,342;5,393,993;5,338,944;5,210,051;5,027,168;5,027,168;4,966,862和/或4,918,497中所描述的,在此并入其公开的全部内容作为参考。在2003年1月9日公布的标题为Group III Nitride Based Light EmittingDiode Structures With a Quantum Well and Superlattice,GroupIII Nitride Based Quantum Well Structures and Group III NitrideBased Superlattice Structures的美国专利公开物No.US2003/0006418A1、以及公布的标题为Light Emitting DiodesIncluding Modifications for Light Extraction and ManufacturingMethods Therefor的美国专利公开物No.US 2002/0123164A1中描述了其它适合的LED和/或激光器。此外,涂有磷光体的LED,例如在2003年9月9日提交的标题为Phosphor-Coated Light EmittingDiodes Including Tapered Sidewalls and Fabrication MethodsTherefor的美国申请序列号No.10/659,241中描述的那些,在此并入 其公开的全部内容作为参考,也可适合用于本发明的实施例中。可配置LED和/或激光器以操作使得光发射通过基板。在这些实施例中,可图案化基板以便增强器件的光输出,如在例如以上引用的美国专利公开物No.US 2002/0123164A1中所描述的。
仍参考图1,柔性膜120可以提供盖片,该盖片可以由柔性材料例如常规室温硬化(RTV)硅橡胶制成。可使用其它硅氧烷基和/或柔性材料。通过由柔性材料制成,当其在操作期间膨胀和收缩时,柔性膜120能适应基板110。而且,柔性膜20可以通过简单的低成本技术例如传递模塑、喷射模塑和/或本领域技术人员公知的其它常规技术制成。
如上所述,柔性膜120在其中包括光学元件130。光学元件可以包括透镜、棱镜、光学发射增强和/或转换元件,例如磷光体、光学散射元件和/或其它光学元件。如下面将详细描述的,还可提供一个或多个光学元件130。而且,如图1所示,在一些实施例中,光耦合介质170,例如光耦合凝胶和/或其它系数匹配材料,可提供在光学元件130和半导体发光器件140之间。
仍参考图1,附着元件150可以实现为粘接剂,其可放置在基板110的***周围、柔性膜120的***周围和/或其选择部分处,例如在其拐角处。在其它实施例中,基板110可铸造在柔性膜120周围,以提供附着元件150。可使用其它常规的附着技术。
下面参考图1描述根据本发明各个实施例装配半导体发光器件100的方法。如图1所示,半导体发光元件140安装在基板面110a上。例如利用附着元件150,将在其中包括光学元件130的柔性膜120附着到基板面110a,以便在操作中半导体发光元件通过光学元件130发射光160。在一些实施例中,光耦合介质170放置在半导体发光元件140和光学元件130之间。
图2是根据本发明的其它实施例的半导体发光器件的截面图。在这些实施例中,基板面110a在其中包括腔110b。柔性膜120在面110a上延伸超出腔110b。光学元件130叠置于腔110b上,并且半导体发光元件140位于腔110b中,并且被配置用以通过光学元件130发射光160。在图2中,光学元件130包括凹透镜。在一些实施例中,光耦合介质170提供在光学元件130和半导体发光元件140之间的腔110b中。 在一些实施例中,光耦合介质170填充腔110b。
图3是本发明的其它实施例的截面图。如图3所示,两个光学元件130和330包括在柔性膜120中。第一光学元件130包括透镜,第二光学元件330包括棱镜。来自半导体发光元件140的光穿过棱镜330并穿过透镜130。还可提供光耦合介质170。在一些实施例中,光耦合介质170填充腔110b。光耦合介质170可具有与棱镜的折射率差的足够差异,以便该棱镜能减小遮蔽。如图3所示,半导体发光元件包括朝着柔性膜120延伸的线路140a,并且配置棱镜330以减小从半导体发光元件140发射的光通过线路140a的遮蔽。由此在减小的线路140a的遮蔽的情况下可提供更均匀的光发射。应当理解,在此以一般意义使用术语“线路”来包含用于半导体发光元件140的任何电连接。
图4是本发明的其它实施例的截面图。如图4所示,磷光体410提供在透镜130和半导体发光元件140之间的柔性膜120上。磷光体410可以包括掺杂铈的钇铝石榴石(YAG)和/或其它常规的磷光体。在一些实施例中,磷光体包括掺杂铯的钇铝石榴石(YAG:Ce)。在其它实施例中,可使用纳米磷光体。磷光体对于本领域技术人员是公知的并且不需要在此进一步描述。还可提供可填充腔110b的光耦合介质170。
图5示出了本发明的另外的实施例。在这些实施例中,透镜130包括邻近半导体发光元件140的凹形内表面130a,并且磷光体410包括在凹形内表面130a上的共形磷光层。还可提供可填充腔110b的光耦合介质170。
图6是其它实施例的截面图。如图6所示,叠置于腔110b上面的柔性膜120的至少一部分120d对光是透明的。而且,在面110a上延伸超出腔110b的柔性膜120的至少一部分120c对光是不透明的,如由柔性膜120的带点部分120c所示。不透明区域120c可以减小或防止光射线跳动,并且由此潜在地产生更希望的光图案。还可提供可填充腔110b的光耦合介质170。
图7是本发明的其它实施例的截面图,其中柔性膜120可由多种材料制备。如图7所示,叠置于腔110b上面的柔性膜120的至少一部分120d包括第一材料,并且在面110a上延伸超出腔110b的柔性膜120的至少一部分120c包括第二材料。在一些实施例中两种或多种材料可 用在柔性膜120中,以对于发射光和不发射光的柔性膜120的部分提供不同特性。在其它实施例中为其它目的可使用多种材料。例如,不可弯曲和/或柔性塑料透镜可附着到柔性膜上。例如,可利用常规的多种模塑技术制造具有多种材料的这种柔性膜120。在一些实施例中,可不充分地固化模塑的第一材料,以便提供附着到随后模塑的第二材料的令人满意的接合。在其它实施例中,对于光学元件和柔性膜可使用相同的材料,其中形成光学元件,然后围绕光学元件形成柔性膜。还可提供可填充腔110b的光耦合介质170。
图8是本发明的其它实施例的截面图。在这些实施例中,半导体发光元件140包括线路140a,其朝着腔110b中的柔性膜120延伸并且接触该柔性膜120。柔性膜120包括透明导体810,其可以包括氧化铟锡(ITO)和/或其它常规的透明导体。透明导体810在腔110b中延伸并且电连接至该线路。由此由接触140导致的遮蔽可减小。而且,可减小或除去至基板110的线接合和潜在发生的光扭曲。还可提供可填充腔110b的光耦合介质170。
图9是本发明的其它实施例的截面图。如图9所示,光学元件130包括叠置于腔110b上面并且远离腔110b突出的透镜。柔性膜120进一步包括在透镜130和发光元件140之间朝着腔110b突出的突出元件930。如图9所示,共形磷光层410提供在突出元件930上。通过在透镜130的背面提供突出元件930,可取代该器件中的光耦合介质170。图9的配置由此可在离发光元件140所希望的距离处提供更均匀的磷光体涂层,以便提供更均匀的照明。光耦合介质170可填充腔110b。
图10和11示出了根据本发明的各个实施例包括多个半导体发光元件和/或多个光学元件的半导体发光器件。例如,如图10所示,光学元件130是第一光学元件,半导体发光元件140是第一半导体发光元件。柔性膜120在其中还包括与第一光学元件130间隔开的第二光学元件130′,并且该器件进一步包括在基板110和柔性膜120之间的第二半导体发光元件140′,并且其被配置用以通过第二光学元件130′发射光。而且,还可提供第三光学元件130″和第三半导体发光元件140″。光学元件130、130′和130″彼此可以是相同的和/或不同的,并且半导体发光元件140、140′和140″彼此可以是相同和/或不同的。而且,在图10的实施例中,腔110b是第一腔,并且第二和 第三腔110b′、110b″分别被提供用于第二和第三半导体发光元件140′、140″。腔110b、110b′和110b″彼此可以是相同的和/或可具有不同的结构。还可提供可填充该腔或这些腔的光耦合介质170。
还如图10所示,磷光体410可以是第一磷光层,并且第二和/或第三磷光层410′和410″可分别提供在第二光学元件130′和第二半导体发光元件140′之间、以及第三光学元件130″和第三半导体发光元件140″之间的柔性膜120上。磷光层410、410′和410″可以是相同的,可以是不同的和/或可以被除去。尤其是,在本发明的一些实施例中,配置第一磷光层410和第一半导体发光元件140以产生红光,配置第二磷光层410′和第二半导体发光元件140′以产生蓝光,并且配置第三磷光层410″和第三半导体发光元件140″以产生绿光。由此在一些实施例中可提供能发射白光的红、绿、蓝(RGB)发光元件。
图11是本发明的其它实施例的截面图。在这些实施例中,分别为第一、第二和第三半导体发光元件140、140′和140″提供单个腔1100。还可提供可填充腔1100的光耦合介质170。
图12是本发明的另外的实施例的截面图。在图12中,光学元件1230包括具有散布在其中的磷光体的透镜。例如,在Negley等人于2003年9月9日提交的、转让给本发明的受让人的、标题为Transmissive Optical Elements Including Transparent PlasticShell Having a Phosphor Dispersed Therein,and Methods ofFabricating Same的申请序列号No.10/659,240中描述了包括散布在其中的磷光体的透镜,在此并入其公开的全部内容作为参考。还可提供可填充腔110b的光耦合介质170。
在本发明的另外的实施例中,光学散射元件可嵌入透镜中,如图12中所示,和/或被提供为单独的层,如例如图9中所示,加上或代替磷光体。
图13是根据本发明的其它实施例的半导体发光器件的透视图。基板110附着到常规封装1310。还可提供光耦合介质170。
本领域技术人员应当理解,已结合图1-13单独地描述了本发明的各个实施例。然而,可根据本发明的各个实施例提供图1-13的实施例的组合和子组合。
现在将提供本发明的各个实施例的另外论述。尤其是,在一些实 施例中,以上描述的柔性膜120可由柔性材料例如RTV、由GE出售的GE RTV 615、由Thermoset/Lord公司出售的UR 234、和/或其它常规的柔性材料制成,并且在一些实施例中可以是厚度在约25μm和约500μm之间。柔性膜120结合一个或多个光学元件130以实现所希望的光学设计。由于由柔性材料制成,因此当其膨胀和收缩时,柔性膜120能适应半导体发光器件。而且,在一些实施例中,柔性膜可以通过简单的低成本技术例如传递模塑、喷射模塑和/或其它技术制造,并且在柔性膜片的任一侧上可包括多个光学元件和/或其它特征。这允许复杂的光学元件“单一”放置在可以包括多个LED发射体的封装(或封装的基板)上。
常规地,LED封装使用由刚性塑料或玻璃模塑的透镜。或者使用硬密封剂来封装芯片并形成光学元件,或者将透镜施加在光耦合介质上,例如光学凝胶,如Nye光学凝胶。通过光学退化和LED芯片、尤其是功率LED芯片上的高应力会破坏硬密封剂,并且光耦合介质还会潜在地产生问题,因为该凝胶可能会暴露在部分表面上,其由于凝胶的粘性可能会引起俘获暴露材料上的灰尘/碎屑。相比之下,根据本发明的一些实施例的柔性膜120可以是利用光耦合介质170的封装的端接表面,并且还包括光学元件130,例如一个或多个光学透镜。当使用在其中具有多个LED的封装时,放置一个单元(具有多个光学元件的柔性膜)的能力可以潜在地提供好处。代替为每个LED放置透镜,可以提供柔性膜130的单一放置。
其它特征可以并入柔性膜130中。例如,在光学透镜的相对侧上,可并入包括磷光体和/或光耦合介质170的填充区域,以给出用于产生白光的透镜上涂料(paint-on lens)的特征。在Michael Leung于2003年9月18日提交的、转让给本发明的受让人的、标题为MoldedChip Fabrication Method and Apparatus的申请序列号No.10/666,399中描述了用于产生白光的透镜上涂料,在此并入其公开的全部内容作为参考。
通过提供例如在图9中描述的突出,本发明的一些实施例可以减小或最小化光耦合介质170的体积。通过减小光耦合介质170的量,可提供更均匀的光发射。由此,本发明的这些和/或其它实施例可以减小或除去从发光器件输出的光的与角相关的辐射图案,例如相关色温 (CCT)的角相关性。由此,在一些实施例中,来自器件的所有表面的光强度和x、y色度值/坐标可以保持相对恒定。当用于照明应用,例如在不希望聚光灯效应的房间中时,这可以是有利的。
在附图和说明书中,已公开了本发明的实施例,并且尽管采用了特定术语,但它们仅以一般的和描述性的意义使用并且不用于限制的目的,本发明的范围列在下面的权利要求中。
Claims (13)
1.一种半导体发光器件,包括:
具有面的基板;
在该面上在其中包括光学元件的柔性膜;以及
半导体发光元件,该半导体发光元件在基板和柔性膜之间并且被配置用以通过光学元件发射光,
其中该面在其中包括腔,其中柔性膜在该面上延伸超出腔,其中光学元件叠置于腔上面,并且其中半导体发光元件在腔中,以及
其中叠置于腔上面的柔性膜的至少一部分包括第一材料,并且其中在该面上延伸超出腔的柔性膜的至少一部分包括第二材料。
2.根据权利要求1所述的器件,其中光学元件包括透镜。
3.根据权利要求2所述的器件,进一步包括在透镜和半导体发光元件之间的柔性膜上的磷光体。
4.根据权利要求3所述的器件,其中透镜包括邻近半导体发光元件的凹形内表面,并且其中磷光体包括在凹形内表面上的共形磷光层。
5.根据权利要求1所述的器件,进一步包括附着元件,其被配置用以使柔性膜和基板彼此附着。
6.根据权利要求1所述的器件,其中半导体发光元件包括发光二极管。
7.根据权利要求1所述的器件,其中光学元件包括磷光体。
8.根据权利要求7所述的器件,其中光学元件包括具有散布在其中的磷光体的透镜。
9.根据权利要求1所述的器件,其中光学元件包括光学发射增强和/或转换元件。
10.根据权利要求1所述的器件,其中光学元件包括光散射元件。
11.根据权利要求1所述的器件,进一步包括在光学元件和半导体发光元件之间的光耦合介质。
12.根据权利要求1所述的器件,进一步包括在光学元件和半导体发光元件之间的腔中的光耦合介质。
13.根据权利要求3所述的器件,进一步包括在磷光体和半导体发光元件之间的光耦合介质。
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Families Citing this family (126)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7145125B2 (en) | 2003-06-23 | 2006-12-05 | Advanced Optical Technologies, Llc | Integrating chamber cone light using LED sources |
US7521667B2 (en) * | 2003-06-23 | 2009-04-21 | Advanced Optical Technologies, Llc | Intelligent solid state lighting |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
JP5320655B2 (ja) * | 2004-06-30 | 2013-10-23 | 三菱化学株式会社 | 発光装置、照明、表示装置用バックライトユニット及び表示装置 |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
GB2425449B (en) * | 2005-04-26 | 2007-05-23 | City Greening Engineering Comp | Irrigation system |
US7646035B2 (en) * | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
US8835952B2 (en) | 2005-08-04 | 2014-09-16 | Cree, Inc. | Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants |
US7329907B2 (en) * | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
US7863642B2 (en) | 2005-08-24 | 2011-01-04 | Koninklijke Philips Electronics N.V. | Light emitting diodes and lasers diodes with color converters |
JP5614766B2 (ja) | 2005-12-21 | 2014-10-29 | クリー インコーポレイテッドCree Inc. | 照明装置 |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
US7777166B2 (en) | 2006-04-21 | 2010-08-17 | Cree, Inc. | Solid state luminaires for general illumination including closed loop feedback control |
EP1850399A1 (en) * | 2006-04-25 | 2007-10-31 | ILED Photoelectronics Inc. | Sealing structure for a white light emitting diode |
US7722220B2 (en) | 2006-05-05 | 2010-05-25 | Cree Led Lighting Solutions, Inc. | Lighting device |
US7718991B2 (en) * | 2006-05-23 | 2010-05-18 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
EP2027412B1 (en) * | 2006-05-23 | 2018-07-04 | Cree, Inc. | Lighting device |
US7703945B2 (en) * | 2006-06-27 | 2010-04-27 | Cree, Inc. | Efficient emitting LED package and method for efficiently emitting light |
US7763478B2 (en) | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US7889421B2 (en) | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
US8652040B2 (en) | 2006-12-19 | 2014-02-18 | Valencell, Inc. | Telemetric apparatus for health and environmental monitoring |
US8157730B2 (en) | 2006-12-19 | 2012-04-17 | Valencell, Inc. | Physiological and environmental monitoring systems and methods |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
US9061450B2 (en) | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
US7709853B2 (en) * | 2007-02-12 | 2010-05-04 | Cree, Inc. | Packaged semiconductor light emitting devices having multiple optical elements |
US7972030B2 (en) * | 2007-03-05 | 2011-07-05 | Intematix Corporation | Light emitting diode (LED) based lighting systems |
US7964888B2 (en) * | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
TW200843050A (en) * | 2007-04-27 | 2008-11-01 | jin-quan Bai | Thin-type image sensing chip package |
US20080283864A1 (en) * | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
WO2009014590A2 (en) | 2007-06-25 | 2009-01-29 | Qd Vision, Inc. | Compositions and methods including depositing nanomaterial |
EP2171502B1 (en) * | 2007-07-17 | 2016-09-14 | Cree, Inc. | Optical elements with internal optical features and methods of fabricating same |
JP2010533976A (ja) * | 2007-07-18 | 2010-10-28 | キユーデイー・ビジヨン・インコーポレーテツド | 固体照明に有用な量子ドットベースの光シート |
US8791631B2 (en) | 2007-07-19 | 2014-07-29 | Quarkstar Llc | Light emitting device |
US8251903B2 (en) | 2007-10-25 | 2012-08-28 | Valencell, Inc. | Noninvasive physiological analysis using excitation-sensor modules and related devices and methods |
US10256385B2 (en) * | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
JP5280106B2 (ja) | 2007-12-07 | 2013-09-04 | デクセリアルズ株式会社 | 光源装置および表示装置 |
JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
US8177382B2 (en) * | 2008-03-11 | 2012-05-15 | Cree, Inc. | Apparatus and methods for multiplanar optical diffusers and display panels for using the same |
US20090250626A1 (en) * | 2008-04-04 | 2009-10-08 | Hexatech, Inc. | Liquid sanitization device |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
EP2297762B1 (en) | 2008-05-06 | 2017-03-15 | Samsung Electronics Co., Ltd. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US8577431B2 (en) | 2008-07-03 | 2013-11-05 | Cercacor Laboratories, Inc. | Noise shielding for a noninvasive device |
US7928458B2 (en) * | 2008-07-15 | 2011-04-19 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
US7728399B2 (en) * | 2008-07-22 | 2010-06-01 | National Semiconductor Corporation | Molded optical package with fiber coupling feature |
US8630691B2 (en) | 2008-08-04 | 2014-01-14 | Cercacor Laboratories, Inc. | Multi-stream sensor front ends for noninvasive measurement of blood constituents |
US7932529B2 (en) * | 2008-08-28 | 2011-04-26 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
US8525207B2 (en) * | 2008-09-16 | 2013-09-03 | Osram Sylvania Inc. | LED package using phosphor containing elements and light source containing same |
US8004172B2 (en) | 2008-11-18 | 2011-08-23 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same |
US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
US9052416B2 (en) | 2008-11-18 | 2015-06-09 | Cree, Inc. | Ultra-high efficacy semiconductor light emitting devices |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8788002B2 (en) | 2009-02-25 | 2014-07-22 | Valencell, Inc. | Light-guiding devices and monitoring devices incorporating same |
WO2010098912A2 (en) | 2009-02-25 | 2010-09-02 | Valencell, Inc. | Light-guiding devices and monitoring devices incorporating same |
US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
US20110006163A1 (en) * | 2009-07-13 | 2011-01-13 | David Wait | Segmented parabolic concentrator for space electric power |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
DE102009039982A1 (de) * | 2009-09-03 | 2011-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements |
JP5936810B2 (ja) * | 2009-09-11 | 2016-06-22 | ローム株式会社 | 発光装置 |
US20110062469A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
US8203161B2 (en) * | 2009-11-23 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Wavelength converted semiconductor light emitting device |
KR20120120187A (ko) * | 2009-12-30 | 2012-11-01 | 뉴포트 코포레이션 | 새로운 광학 코팅을 채용한 led 디바이스 아키텍처 및 제조방법 |
US9991427B2 (en) * | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
JP2012019075A (ja) * | 2010-07-08 | 2012-01-26 | Sony Corp | 発光素子、および表示装置 |
JP2012019074A (ja) | 2010-07-08 | 2012-01-26 | Sony Corp | 発光素子、および表示装置 |
US8835199B2 (en) * | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
US9140429B2 (en) | 2010-10-14 | 2015-09-22 | Cree, Inc. | Optical element edge treatment for lighting device |
US8944632B2 (en) * | 2010-10-15 | 2015-02-03 | Douglas Tveit | LED lighting system and method for external surfaces |
US8491140B2 (en) | 2010-11-05 | 2013-07-23 | Cree, Inc. | Lighting device with multiple emitters and remote lumiphor |
US9648673B2 (en) | 2010-11-05 | 2017-05-09 | Cree, Inc. | Lighting device with spatially segregated primary and secondary emitters |
EP2649656A1 (en) * | 2010-12-09 | 2013-10-16 | Koninklijke Philips N.V. | Lighting apparatus for generating light |
US8888701B2 (en) | 2011-01-27 | 2014-11-18 | Valencell, Inc. | Apparatus and methods for monitoring physiological data during environmental interference |
US8899767B2 (en) * | 2011-03-31 | 2014-12-02 | Xicato, Inc. | Grid structure on a transmissive layer of an LED-based illumination module |
WO2012154446A1 (en) * | 2011-05-12 | 2012-11-15 | 3M Innovative Properties Company | Optical structure for remote phosphor led |
KR20120133264A (ko) * | 2011-05-31 | 2012-12-10 | 삼성전자주식회사 | 발광소자 렌즈, 이를 포함하는 발광소자 모듈 및 이를 이용한 발광소자 모듈의 제조방법 |
EP2739207B1 (en) | 2011-08-02 | 2017-07-19 | Valencell, Inc. | Systems and methods for variable filter adjustment by heart rate metric feedback |
TWM428490U (en) * | 2011-09-27 | 2012-05-01 | Lingsen Precision Ind Ltd | Optical module packaging unit |
WO2013078251A1 (en) | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Stress-resistant component for use with quantum dots |
CN104115290B (zh) | 2011-11-23 | 2017-04-05 | 夸克星有限责任公司 | 提供光的不对称传播的发光装置 |
WO2013085874A1 (en) | 2011-12-05 | 2013-06-13 | Cooledge Lighting Inc. | Control of luminous intensity distribution from an array of point light sources |
RU2502917C2 (ru) * | 2011-12-30 | 2013-12-27 | Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" | Светодиодный источник белого света с комбинированным удаленным фотолюминесцентным конвертером |
WO2013109389A1 (en) | 2012-01-16 | 2013-07-25 | Valencell, Inc. | Physiological metric estimation rise and fall limiting |
JP6116017B2 (ja) | 2012-01-16 | 2017-04-19 | ヴァレンセル,インコーポレイテッドValencell, Inc. | 慣性律動による生理的測定エラーの軽減 |
US9388959B2 (en) | 2012-03-02 | 2016-07-12 | Osram Sylvania Inc. | White-light emitter having a molded phosphor sheet and method of making same |
US8591076B2 (en) | 2012-03-02 | 2013-11-26 | Osram Sylvania Inc. | Phosphor sheet having tunable color temperature |
CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
WO2014031119A1 (en) | 2012-08-23 | 2014-02-27 | National University Corporation Tokyo University Of Agriculture And Technology | Highly transparent aluminum nitride single crystalline layers and devices made therefrom |
EP2895793B1 (en) | 2012-09-13 | 2020-11-04 | Quarkstar LLC | Light-emitting devices with reflective elements |
WO2014043384A1 (en) | 2012-09-13 | 2014-03-20 | Quarkstar Llc | Light-emitting device with remote scattering element and total internal reflection extractor element |
EP2951869A1 (en) | 2013-01-29 | 2015-12-09 | Hexatech Inc. | Optoelectronic devices incorporating single crystalline aluminum nitride substrate |
US20140209950A1 (en) * | 2013-01-31 | 2014-07-31 | Luxo-Led Co., Limited | Light emitting diode package module |
US9683710B2 (en) | 2013-03-07 | 2017-06-20 | Quarkstar Llc | Illumination device with multi-color light-emitting elements |
US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
WO2014159954A1 (en) | 2013-03-14 | 2014-10-02 | Hexatech, Inc. | Power semiconductor devices incorporating single crystalline aluminum nitride substrate |
WO2014144706A2 (en) * | 2013-03-15 | 2014-09-18 | Quarkstar Llc | Color tuning of light-emitting devices |
US9587790B2 (en) | 2013-03-15 | 2017-03-07 | Cree, Inc. | Remote lumiphor solid state lighting devices with enhanced light extraction |
US9470395B2 (en) | 2013-03-15 | 2016-10-18 | Abl Ip Holding Llc | Optic for a light source |
CN103346243B (zh) * | 2013-07-12 | 2016-08-31 | 广东洲明节能科技有限公司 | 承载散热板和远程荧光粉结构的led光源及其生产方法 |
US9099575B2 (en) | 2013-07-16 | 2015-08-04 | Cree, Inc. | Solid state lighting devices and fabrication methods including deposited light-affecting elements |
TWI582344B (zh) * | 2013-08-05 | 2017-05-11 | 鴻海精密工業股份有限公司 | 透鏡及使用該透鏡的光源裝置 |
US10403671B2 (en) * | 2013-12-10 | 2019-09-03 | Ams Sensors Singapore Pte. Ltd. | Wafer-level optical modules and methods for manufacturing the same |
KR20150105169A (ko) * | 2014-03-06 | 2015-09-16 | 교우세라 커넥터 프로덕츠 가부시키가이샤 | 조명기구 |
US10147854B2 (en) * | 2014-05-10 | 2018-12-04 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
USD774006S1 (en) * | 2014-08-27 | 2016-12-13 | Mitsubishi Electric Corporation | Light source module |
KR102347528B1 (ko) | 2015-01-14 | 2022-01-05 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
DE102015107580A1 (de) * | 2015-05-13 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches Bauelement |
US10945618B2 (en) | 2015-10-23 | 2021-03-16 | Valencell, Inc. | Physiological monitoring devices and methods for noise reduction in physiological signals based on subject activity type |
EP3344127A4 (en) | 2015-10-23 | 2018-07-25 | Valencell, Inc. | Physiological monitoring devices and methods that identify subject activity type |
US10966662B2 (en) | 2016-07-08 | 2021-04-06 | Valencell, Inc. | Motion-dependent averaging for physiological metric estimating systems and methods |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
EP3684582A1 (en) | 2017-09-19 | 2020-07-29 | Lumileds Holding B.V. | Light emitting device and manufacturing method thereof |
JP7007560B2 (ja) * | 2017-09-28 | 2022-01-24 | 日亜化学工業株式会社 | 光源装置 |
US10663145B2 (en) | 2018-04-18 | 2020-05-26 | Gary M. Urban | Colored silicone gels for tinting landscape lighting |
EP3944345A4 (en) * | 2019-03-22 | 2022-12-14 | LG Innotek Co., Ltd. | LIGHTING MODULE AND LIGHTING DEVICE COMPRISING IT |
KR102452424B1 (ko) * | 2019-03-22 | 2022-10-11 | 엘지이노텍 주식회사 | 차량용 조명 모듈 및 이를 구비한 조명 장치 |
DE102020115536A1 (de) * | 2019-06-21 | 2020-12-24 | Lg Display Co., Ltd. | Lichtleiterfilm, Hintergrundlichteinheit und Anzeigevorrichtung |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
CH717330B1 (de) * | 2020-07-27 | 2021-10-29 | Polycontact Ag | Optik für eine Beleuchtungseinrichtung und Beleuchtungseinrichtung. |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
CN112071875B (zh) * | 2020-09-15 | 2023-04-07 | 深圳市华星光电半导体显示技术有限公司 | 显示装置及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4168102A (en) * | 1976-10-12 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Light-emitting display device including a light diffusing bonding layer |
CN2548263Y (zh) * | 2002-04-20 | 2003-04-30 | 富士康(昆山)电脑接插件有限公司 | 光学元件之封装外罩 |
CN1439175A (zh) * | 2000-05-12 | 2003-08-27 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子元件和制造方法 |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6418A (en) * | 1849-05-01 | Improvement in the preparation of flour for bread-making | ||
US123164A (en) * | 1872-01-30 | Improvement in fishing-apparatus | ||
US4154219A (en) | 1977-03-11 | 1979-05-15 | E-Systems, Inc. | Prismatic solar reflector apparatus and method of solar tracking |
JPS5936837B2 (ja) | 1977-04-05 | 1984-09-06 | 株式会社東芝 | 光半導体装置 |
JPS5570080A (en) * | 1978-11-21 | 1980-05-27 | Nec Corp | Preparation of luminous display device |
JPS5776885A (en) | 1980-10-31 | 1982-05-14 | Nec Corp | Optical semiconductor device |
US4545366A (en) | 1984-09-24 | 1985-10-08 | Entech, Inc. | Bi-focussed solar energy concentrator |
US4711972A (en) | 1985-07-05 | 1987-12-08 | Entech, Inc. | Photovoltaic cell cover for use with a primary optical concentrator in a solar energy collector |
JP2593703B2 (ja) * | 1987-12-24 | 1997-03-26 | 三菱電線工業株式会社 | 発光ダイオード照明具 |
CA1337918C (en) | 1988-03-16 | 1996-01-16 | Norihisa Osaka | Phosphor paste compositions and phosphor coatings obtained therefrom |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07307492A (ja) * | 1994-05-11 | 1995-11-21 | Mitsubishi Cable Ind Ltd | Led集合体モジュールおよびその作製方法 |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
JP3357756B2 (ja) | 1994-10-14 | 2002-12-16 | 株式会社シチズン電子 | 表面実装型発光素子 |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US6061111A (en) * | 1995-11-30 | 2000-05-09 | Sony Corporation | Reflective LCD having orientation film formed on quarter wavelayer and planarizing film formed on reflector layer |
JP2947156B2 (ja) | 1996-02-29 | 1999-09-13 | 双葉電子工業株式会社 | 蛍光体の製造方法 |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5861503A (en) * | 1997-04-30 | 1999-01-19 | The Regents Of The University Of California | Process for producing 8-fluoropurines |
US6031179A (en) | 1997-05-09 | 2000-02-29 | Entech, Inc. | Color-mixing lens for solar concentrator system and methods of manufacture and operation thereof |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
TW393785B (en) * | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JPH11163412A (ja) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led照明装置 |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
JPH11251638A (ja) | 1998-03-03 | 1999-09-17 | Yamaha Corp | 輝度可変装置 |
US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
CN1227749C (zh) * | 1998-09-28 | 2005-11-16 | 皇家菲利浦电子有限公司 | 照明*** |
US6204523B1 (en) * | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
JP2000200929A (ja) * | 1998-12-29 | 2000-07-18 | San Arrow Kk | ドットマトリクス発光表示体 |
US6521916B2 (en) * | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
US6489637B1 (en) * | 1999-06-09 | 2002-12-03 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
US6075200A (en) | 1999-06-30 | 2000-06-13 | Entech, Inc. | Stretched Fresnel lens solar concentrator for space power |
US6483196B1 (en) * | 2000-04-03 | 2002-11-19 | General Electric Company | Flip chip led apparatus |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US6998281B2 (en) | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
US6518600B1 (en) * | 2000-11-17 | 2003-02-11 | General Electric Company | Dual encapsulation for an LED |
JP2002176660A (ja) * | 2000-12-08 | 2002-06-21 | Univ Tokyo | 画像表示方法及び画像表示装置 |
JP3738824B2 (ja) | 2000-12-26 | 2006-01-25 | セイコーエプソン株式会社 | 光学装置及びその製造方法並びに電子機器 |
US6411046B1 (en) * | 2000-12-27 | 2002-06-25 | Koninklijke Philips Electronics, N. V. | Effective modeling of CIE xy coordinates for a plurality of LEDs for white LED light control |
AUPR245601A0 (en) * | 2001-01-10 | 2001-02-01 | Silverbrook Research Pty Ltd | An apparatus (WSM09) |
US6891200B2 (en) | 2001-01-25 | 2005-05-10 | Matsushita Electric Industrial Co., Ltd. | Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units |
CN1368764A (zh) * | 2001-01-31 | 2002-09-11 | 广镓光电股份有限公司 | 一种高亮度蓝光发光晶粒的结构 |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6541800B2 (en) * | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
CN1185720C (zh) * | 2001-03-05 | 2005-01-19 | 全新光电科技股份有限公司 | 一种镀有金属反射镜膜基板的发光二极管及其制造方法 |
EP1387412B1 (en) * | 2001-04-12 | 2009-03-11 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
US20020151941A1 (en) * | 2001-04-16 | 2002-10-17 | Shinichi Okawa | Medical illuminator, and medical apparatus having the medical illuminator |
JP3940596B2 (ja) * | 2001-05-24 | 2007-07-04 | 松下電器産業株式会社 | 照明光源 |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP2002374007A (ja) * | 2001-06-15 | 2002-12-26 | Toyoda Gosei Co Ltd | 発光装置 |
US6984934B2 (en) | 2001-07-10 | 2006-01-10 | The Trustees Of Princeton University | Micro-lens arrays for display intensity enhancement |
TW552726B (en) * | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
JP3912090B2 (ja) * | 2001-12-04 | 2007-05-09 | ソニー株式会社 | 表示装置およびこれを用いた携帯端末装置 |
CN1218410C (zh) * | 2002-01-14 | 2005-09-07 | 联铨科技股份有限公司 | 具螺旋布置金属电极的氮化物发光二极管及其制造方法 |
JP4269709B2 (ja) | 2002-02-19 | 2009-05-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
ITUD20020059A1 (it) * | 2002-03-12 | 2003-09-12 | Seima Italiana Spa | Dispositivo ottico di illuminazione e metodo di produzione di dispositivi di illuminazione o simili adottanti tale dispositivo |
US6791120B2 (en) * | 2002-03-26 | 2004-09-14 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
CN1198339C (zh) * | 2002-04-04 | 2005-04-20 | 国联光电科技股份有限公司 | 发光二极管的结构及其制造方法 |
TW546799B (en) | 2002-06-26 | 2003-08-11 | Lingsen Precision Ind Ltd | Packaged formation method of LED and product structure |
US7078737B2 (en) * | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
AU2003276867A1 (en) * | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US6869753B2 (en) * | 2002-10-11 | 2005-03-22 | Agilent Technologies, Inc. | Screen printing process for light emitting base layer |
US7465414B2 (en) | 2002-11-14 | 2008-12-16 | Transitions Optical, Inc. | Photochromic article |
JP4216577B2 (ja) | 2002-12-20 | 2009-01-28 | シチズン電子株式会社 | 導光板 |
US20060056031A1 (en) * | 2004-09-10 | 2006-03-16 | Capaldo Kevin P | Brightness enhancement film, and methods of making and using the same |
EP2270887B1 (en) * | 2003-04-30 | 2020-01-22 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
US7867695B2 (en) * | 2003-09-11 | 2011-01-11 | Bright View Technologies Corporation | Methods for mastering microstructures through a substrate using negative photoresist |
US7192692B2 (en) * | 2003-09-11 | 2007-03-20 | Bright View Technologies, Inc. | Methods for fabricating microstructures by imaging a radiation sensitive layer sandwiched between outer layers |
US7190387B2 (en) * | 2003-09-11 | 2007-03-13 | Bright View Technologies, Inc. | Systems for fabricating optical microstructures using a cylindrical platform and a rastered radiation beam |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP4458804B2 (ja) * | 2003-10-17 | 2010-04-28 | シチズン電子株式会社 | 白色led |
US6841804B1 (en) * | 2003-10-27 | 2005-01-11 | Formosa Epitaxy Incorporation | Device of white light-emitting diode |
EP1691425B1 (en) * | 2003-11-25 | 2010-08-11 | Panasonic Electric Works Co., Ltd. | Light emitting device using light emitting diode chip |
US20050168689A1 (en) * | 2004-01-30 | 2005-08-04 | Knox Carol L. | Photochromic optical element |
US7808706B2 (en) * | 2004-02-12 | 2010-10-05 | Tredegar Newco, Inc. | Light management films for displays |
US7262912B2 (en) * | 2004-02-12 | 2007-08-28 | Bright View Technologies, Inc. | Front-projection screens including reflecting layers and optically absorbing layers having apertures therein, and methods of fabricating the same |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US7868343B2 (en) * | 2004-04-06 | 2011-01-11 | Cree, Inc. | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
JP4980570B2 (ja) * | 2005-02-01 | 2012-07-18 | 富士通東芝モバイルコミュニケーションズ株式会社 | 電子機器及び照光部材 |
US20060285332A1 (en) | 2005-06-15 | 2006-12-21 | Goon Wooi K | Compact LED package with reduced field angle |
KR20070007648A (ko) * | 2005-07-11 | 2007-01-16 | 삼성전자주식회사 | 양방향 광전달 반투과 프리즘 시트, 양방향 백라이트어셈블리 및 이를 포함하는 양방향 액정표시장치 |
US7324276B2 (en) * | 2005-07-12 | 2008-01-29 | Bright View Technologies, Inc. | Front projection screens including reflecting and refractive layers of differing spatial frequencies |
KR20080042908A (ko) | 2005-08-30 | 2008-05-15 | 미츠비시 레이온 가부시키가이샤 | 광편향 시트와 그 제조 방법 |
US7622803B2 (en) | 2005-08-30 | 2009-11-24 | Cree, Inc. | Heat sink assembly and related methods for semiconductor vacuum processing systems |
JP5166278B2 (ja) | 2005-11-18 | 2013-03-21 | クリー インコーポレイテッド | 固体素子照明タイル |
US7502169B2 (en) * | 2005-12-07 | 2009-03-10 | Bright View Technologies, Inc. | Contrast enhancement films for direct-view displays and fabrication methods therefor |
US7420742B2 (en) * | 2005-12-07 | 2008-09-02 | Bright View Technologies, Inc. | Optically transparent electromagnetic interference (EMI) shields for direct-view displays |
JP5614766B2 (ja) * | 2005-12-21 | 2014-10-29 | クリー インコーポレイテッドCree Inc. | 照明装置 |
US7213940B1 (en) * | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
CN101351891B (zh) | 2005-12-22 | 2014-11-19 | 科锐公司 | 照明装置 |
EP2002488A4 (en) * | 2006-01-20 | 2012-05-30 | Cree Inc | DISTRIBUTION OF SPECTRAL CONTENT IN SOLID PHYSICIANS BY SPATIAL SEPARATION OF LUMIPHORIDE FILMS |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US7777166B2 (en) * | 2006-04-21 | 2010-08-17 | Cree, Inc. | Solid state luminaires for general illumination including closed loop feedback control |
US7722220B2 (en) * | 2006-05-05 | 2010-05-25 | Cree Led Lighting Solutions, Inc. | Lighting device |
EP2027412B1 (en) | 2006-05-23 | 2018-07-04 | Cree, Inc. | Lighting device |
US7718991B2 (en) * | 2006-05-23 | 2010-05-18 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
US8596819B2 (en) | 2006-05-31 | 2013-12-03 | Cree, Inc. | Lighting device and method of lighting |
US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
KR20090048640A (ko) * | 2006-08-23 | 2009-05-14 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
US7959329B2 (en) * | 2006-09-18 | 2011-06-14 | Cree, Inc. | Lighting devices, lighting assemblies, fixtures and method of using same |
WO2008036873A2 (en) * | 2006-09-21 | 2008-03-27 | Cree Led Lighting Solutions, Inc. | Lighting assemblies, methods of installing same, and methods of replacing lights |
WO2008045927A2 (en) * | 2006-10-12 | 2008-04-17 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making same |
US7862214B2 (en) * | 2006-10-23 | 2011-01-04 | Cree, Inc. | Lighting devices and methods of installing light engine housings and/or trim elements in lighting device housings |
US8029155B2 (en) * | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
TWI496315B (zh) * | 2006-11-13 | 2015-08-11 | Cree Inc | 照明裝置、被照明的殼體及照明方法 |
US9605828B2 (en) * | 2006-11-14 | 2017-03-28 | Cree, Inc. | Light engine assemblies |
CN101622492B (zh) * | 2006-11-14 | 2013-01-30 | 科锐公司 | 照明组件和用于照明组件的部件 |
TWI524033B (zh) * | 2006-11-30 | 2016-03-01 | 克里公司 | 照明設備、照明裝置及用於其之元件 |
EP2095018A1 (en) * | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
WO2008070607A1 (en) * | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
US7709853B2 (en) * | 2007-02-12 | 2010-05-04 | Cree, Inc. | Packaged semiconductor light emitting devices having multiple optical elements |
US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
US7964888B2 (en) * | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
US7967480B2 (en) | 2007-05-03 | 2011-06-28 | Cree, Inc. | Lighting fixture |
TWI448644B (zh) | 2007-05-07 | 2014-08-11 | Cree Inc | 照明設備 |
US7901107B2 (en) | 2007-05-08 | 2011-03-08 | Cree, Inc. | Lighting device and lighting method |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
CN101836297A (zh) * | 2007-10-26 | 2010-09-15 | 科锐Led照明科技公司 | 具有一个或多个发光荧光体的照明装置及其制造方法 |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8177382B2 (en) * | 2008-03-11 | 2012-05-15 | Cree, Inc. | Apparatus and methods for multiplanar optical diffusers and display panels for using the same |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4168102A (en) * | 1976-10-12 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Light-emitting display device including a light diffusing bonding layer |
CN1439175A (zh) * | 2000-05-12 | 2003-08-27 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子元件和制造方法 |
CN2548263Y (zh) * | 2002-04-20 | 2003-04-30 | 富士康(昆山)电脑接插件有限公司 | 光学元件之封装外罩 |
Non-Patent Citations (1)
Title |
---|
JP特开2003-318448A 2003.11.07 |
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