CN103375708B - 发光二极管灯源装置 - Google Patents

发光二极管灯源装置 Download PDF

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CN103375708B
CN103375708B CN201210125763.XA CN201210125763A CN103375708B CN 103375708 B CN103375708 B CN 103375708B CN 201210125763 A CN201210125763 A CN 201210125763A CN 103375708 B CN103375708 B CN 103375708B
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light
emitting diode
spheroid
diode lamp
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CN103375708A (zh
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徐智鹏
张忠民
胡雪凤
张简千琳
蔡钰玮
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Zhanjing Technology Shenzhen Co Ltd
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Priority to US13/729,044 priority patent/US8921880B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

一种发光二极管灯源装置，包括发光二极管光源，该发光二极管灯源装置还包括设于该发光二极管光源的出光路径上的第一透光结构和围设该第一透光结构的第二透光结构，该第一透光结构内设有散射粉体，该发光二极管光源收容于该第一透光结构内部。

Description

发光二极管灯源装置
技术领域
本发明涉及一种发光二极管灯源装置，尤其涉及一种具有大发光角度且光强分布均匀的发光二极管灯源装置。
背景技术
相比于传统的发光源，发光二极管（Light Emitting Diode，LED）具有重量轻、体积小、污染低、寿命长等优点，其作为一种新型的光源，已经被越来越多地应用到各领域当中，如路灯、交通灯、信号灯、射灯及装饰灯等。然而，发光二极管作为点光源，在应用过程中，其出光角度一般仅为120°且光强分布不均匀。
发明内容
鉴于此，本发明旨在提供一种具有较大发光角度且光强分布均匀的发光二极管灯源装置。
一种发光二极管灯源装置，包括发光二极管光源，该发光二极管灯源装置还包括设于该发光二极管光源的出光路径上的第一透光结构和围设该第一透光结构的第二透光结构，该第一透光结构内设有散射粉体，该发光二极管光源收容于该第一透光结构内部。
本发明通过在发光二极管光源出光路径上设置第一透光结构和第二透光结构，并在第一透光结构内设有散射粉体，从而可使发光二极管光源发出的光线在散射粉体的散射作用下转换成为多方向出射的光线，从而使得发光二极管灯源装置具有较大出光角度，并且使得各方向上的光强度分布均匀。
附图说明
图1为本发明的发光二极管灯源装置的位置关系图。
图2为图1中的第一透光结构和第二透光结构的几何关系图。
主要元件符号说明
发光二极管灯源装置 1
发光二极管光源 10
底面 11
第一透光结构 20
散射粉体 21
第二透光结构 30
点 O1、O2、A、B、C
球 M、N
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
图1为本发明所提供的发光二极管灯源装置1的位置关系图。发光二极管灯源装置1包括发光二极管光源10，围设于发光二极管光源10的一第一透光结构20，以及围设于发光二极管光源10和第一透光结构20的一第二透光结构30。
于本实施例中，发光二极管光源10为一发光二极管封装结构，其具有一底面11。当然，发光二极管光源10也可为具有电性功能连接的LED芯片。
第一透光结构20设于发光二极管光源10的出光路径上且第一透光结构20内部设有散射粉体21。请同时参阅图2，于本实施例中，第一透光结构20大致呈球形。发光二极管光源10收容于第一透光结构20的内部，且其底面11与第一透光结构20的底面平齐。当然，发光二极管光源10也可设于第一透光结构20的外部。当然，散射粉体21也可设于第一透光结构20内的、邻近第一透光结构20外表面的边界区域。
第二透光结构30由透光材料制成，其围设发光二极管光源10和第一透光结构20的外侧且紧贴第一透光结构20的外表面。于本实施例中，第二透光结构30为一透镜，其外部轮廓大致呈球形。第二透光结构30收容第一透光结构20于其内，且其折射率为N1，其底部与发光二极管光源10的底面11平齐。当然，当所述散射粉体21设于第一透光结构20内的、邻近第一透光结构20外表面的边界区域时，该散热粉体21邻近第二透光结构30。
请参阅图2，此为第一透光结构20与第二透光结构30的几何关系图。在此定义球M和球N。球M和球N的球心分别为点O2 和点O1，其半径分别为r和R，R＞r，且球M和球N在点C形成内切。第一透光结构20的外部轮廓与球M重合，第二透光结构30的外部轮廓与球N重合。因此，点C位于O1O2 的延长线上而远离点O1，O1O2 的延长线与球M相交于点A。发光二极管光源10位于第一透光结构20所处球体的球心点O2与第二透光结构30所处球体的球心点O1的连线上，且发光二极管光源10位于第二透光结构30所处球体的球心点O1的一侧，并相对远离第一透光结构20所处球体的球心点O2。
请再次参阅图1，当发光二极管光源10发光时，其发出的光线射至第一透光结构20，由于其内散射粉体21的散射效应，当光线从第一透光结构20射出时，可朝向各个不同的方向入射至第二透光结构30，从而增加了发光二极管光源10的出光角度，且使各方向上的光强分布均匀。当光线自点A、且沿垂直于点O1和点O2的连线的方向射至第二透光结构30时，该光线入射至第二透光结构30的外轮廓上的点B，此时入射角θ最大。当角θ与第二透光结构30发生全反射的临界角β相等时，该光线发生折射，其折射角α=90°。当θ＞β时，该光线将会发生全反射而被反射至第二透光结构30的内部，导致光的损失。因此，当θ＜β，角α＜90°，此时定义空气的折射率为1，根据光的折射定律，N1Sinθ= Sinα＜Sin90°=1，又由图2中的几何关系可得知，Sinθ=﹙2r-R﹚/R，因此，N1﹙2r-R﹚/R＜1，即N1＜R/﹙2r-R﹚。由此可知，当满足N1＜R/﹙2r-R﹚时，光线由第二透光结构30入射至空气中时不会因为入射角θ过大而导致光线在第一透光结构20和第二透光结构30内绕射，从而产生光学损失，提高了光线的利用率。
本发明由于在发光二极管光源10的***设置第一透光结构20和第二透光结构30，并在第一透光结构20内设有散射粉体，从而将发光二极管光源10发出的高指向性的光线转换成为多方向出射的光线，从而使得发光二极管灯源装置1具有较大发光角，并且使得各方向上的光强分布均匀。
可以理解地，散射粉体可由单色的萤光粉材料组成，也可由多种色彩的萤光粉材料混合而成，故可根据需求调配萤光粉的色彩来获得不同的出光颜色，改变光线的波长，并可调整发光二极管光源10的色温。散射粉体也可根据实际需要由SiO2,Al2O3或Silicate等粉体材料和萤光粉材料层状堆叠形成。
当然，第一透光结构20、第二透光结构30及设于第一透光结构20内部散射粉体21等结构，也可理解为：第二透光结构30内填充有球状的散射粉体21，第二透光结构30所处球体的半径为R，而散射粉体21所处球体的半径为r，该发光二极管光源10收容于该散射粉体21内。
可以理解地，图1和图2为了简洁地显示出发光二极管光源10所发出的光线的散射路径及原理，并未示出发光二极管灯源装置1的其他结构，因此本发明中发光二极管灯源装置1并不局限于仅包含有图1中所显示的结构，其还可以包括有灯座和其它结构，在此不再赘述。
本发明的技术内容及技术特点已揭露如上，然而本领域技术人员仍可能基于本发明的教示及揭示而作出种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并为所附的权利要求所涵盖。

Claims (7)

1.一种发光二极管灯源装置，包括发光二极管光源，其特征在于：该发光二极管灯源装置还包括设于该发光二极管光源的出光路径上的第一透光结构和围设该第一透光结构的第二透光结构，该第一透光结构和第二透光结构均呈球状，且其所处球体的半径分别为r和R，r＜R，该第一透光结构所在的球体与第二透光结构所在的球体在最低端处相内切，该第二透光结构的折射率为N1，且该折射率N1满足关系：N1＜R/﹙2r-R﹚，该第一透光结构内设有散射粉体，该发光二极管光源收容于该第一透光结构内部。
2.如权利要求1所述的发光二极管灯源装置，其特征在于：该发光二极管光源位于第一透光结构所处球体的球心与第二透光结构所处球体的球心的连线上，该发光二极管光源位于第二透光结构所处球体的球心一侧、并相对远离第一透光结构所处球体的球心。
3.如权利要求1所述的发光二极管灯源装置，其特征在于：该散射粉体由萤光粉材料组成，或由SiO2粉体、Al2O3粉体或Silicate粉体材料和萤光粉材料层状堆叠组成。
4.如权利要求1所述的发光二极管灯源装置，其特征在于：该散射粉体均匀分布在整个第一透光结构的内部。
5.如权利要求1所述的发光二极管灯源装置，其特征在于：该散射粉体均匀分布在邻近第二透光结构的第一透光结构边界区域内。
6.一种发光二极管灯源装置，包括发光二极管光源，其特征在于：该发光二极管灯源装置还包括设于该发光二极管光源的出光路径上的透光结构和填充于透光结构内的散射粉体，该透光结构和散射粉体均呈球状，且其所处球体的半径分别为R和r，r＜R，该透光结构所在的球体与散射粉体所在的球体在最低端处相内切，该透光结构的折射率为N1，且该折射率N1满足关系：N1＜R/﹙2r-R﹚，该发光二极管光源收容于该散射粉体内。
7.如权利要求6所述的发光二极管灯源装置，其特征在于：该发光二极管光源位于透光结构所处球体的球心与散射粉体所处球体的球心的连线上。
CN201210125763.XA 2012-04-26 2012-04-26 发光二极管灯源装置 Expired - Fee Related CN103375708B (zh)

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