CN1910735A - 集成光子器件 - Google Patents
集成光子器件 Download PDFInfo
- Publication number
- CN1910735A CN1910735A CN 200580002711 CN200580002711A CN1910735A CN 1910735 A CN1910735 A CN 1910735A CN 200580002711 CN200580002711 CN 200580002711 CN 200580002711 A CN200580002711 A CN 200580002711A CN 1910735 A CN1910735 A CN 1910735A
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- laser
- light
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- wavelength
- chip
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- 239000013307 optical fiber Substances 0.000 claims abstract description 41
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Landscapes
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Claims (41)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53724804P | 2004-01-20 | 2004-01-20 | |
US60/537,248 | 2004-01-20 | ||
US60/618,134 | 2004-10-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1910735A true CN1910735A (zh) | 2007-02-07 |
CN100405538C CN100405538C (zh) | 2008-07-23 |
Family
ID=37700867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800027111A Active CN100405538C (zh) | 2004-01-20 | 2005-01-19 | 集成光子器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100405538C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104395798A (zh) * | 2012-07-30 | 2015-03-04 | 惠普发展公司,有限责任合伙企业 | 紧凑型光子平台 |
CN106170898A (zh) * | 2013-11-07 | 2016-11-30 | 镁可微波技术有限公司 | 具有光束形状和光束方向修改的激光器 |
US10209445B2 (en) | 2012-07-30 | 2019-02-19 | Hewlett Packard Enterprise Development Lp | Method of fabricating a compact photonics platform |
CN109655806A (zh) * | 2017-10-11 | 2019-04-19 | 迈来芯科技有限公司 | 传感器设备 |
CN114545550A (zh) * | 2018-02-13 | 2022-05-27 | 苹果公司 | 具有集成边缘外耦合器的集成光子装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3882210B2 (ja) * | 1995-09-13 | 2007-02-14 | ソニー株式会社 | 光学装置 |
US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
US20020175334A1 (en) * | 2001-05-22 | 2002-11-28 | Motorola, Inc. | Optical data converter |
-
2005
- 2005-01-19 CN CNB2005800027111A patent/CN100405538C/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104395798A (zh) * | 2012-07-30 | 2015-03-04 | 惠普发展公司,有限责任合伙企业 | 紧凑型光子平台 |
US9995876B2 (en) | 2012-07-30 | 2018-06-12 | Hewlett Packard Enterprise Development Lp | Configurable compact photonic platforms |
US10209445B2 (en) | 2012-07-30 | 2019-02-19 | Hewlett Packard Enterprise Development Lp | Method of fabricating a compact photonics platform |
CN104395798B (zh) * | 2012-07-30 | 2019-03-01 | 慧与发展有限责任合伙企业 | 紧凑型光子平台 |
CN106170898A (zh) * | 2013-11-07 | 2016-11-30 | 镁可微波技术有限公司 | 具有光束形状和光束方向修改的激光器 |
CN109655806A (zh) * | 2017-10-11 | 2019-04-19 | 迈来芯科技有限公司 | 传感器设备 |
CN109655806B (zh) * | 2017-10-11 | 2024-01-26 | 迈来芯科技有限公司 | 传感器设备 |
CN114545550A (zh) * | 2018-02-13 | 2022-05-27 | 苹果公司 | 具有集成边缘外耦合器的集成光子装置 |
CN114545550B (zh) * | 2018-02-13 | 2024-05-28 | 苹果公司 | 具有集成边缘外耦合器的集成光子装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100405538C (zh) | 2008-07-23 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Massachusetts, USA Patentee after: BINOPTICS Corp. Address before: American New York Patentee before: BINOPTICS Corp. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Bin O Purdy Kors LLC Address before: Massachusetts, USA Patentee before: BINOPTICS Corp. |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: MACOM Technology Solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: M/A-COM technology solutions Holdings Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160829 Address after: Massachusetts, USA Patentee after: M/A-COM technology solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: Bin O Purdy Kors LLC |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Magnesium Microwave Technology Co.,Ltd. Address before: Massachusetts, USA Patentee before: MACOM Technology Solutions Holdings Ltd. |