CN1910735A - Integrated photonic devices - Google Patents
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- CN1910735A CN1910735A CN 200580002711 CN200580002711A CN1910735A CN 1910735 A CN1910735 A CN 1910735A CN 200580002711 CN200580002711 CN 200580002711 CN 200580002711 A CN200580002711 A CN 200580002711A CN 1910735 A CN1910735 A CN 1910735A
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Abstract
A laser ( 22 ) and detector ( 24 ) integrated on corresponding epitaxial layers of a single chip ( 20 ) cooperate with on-chip and/or external optics ( 62 ) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber ( 60 ) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.
Description
The reference of related application
The application requires the U.S. Provisional Patent Application No.60/537 of submission on January 20th, 2004, the U.S. Provisional Patent Application No.60/618 that on October 14th, 248 and 2004 submitted to, and 134 rights and interests, its disclosure is incorporated herein by reference.
Background of invention
The present invention relates generally to photonic device, relate in particular to single chip integrated photonic device and the manufacture method thereof of transmitting and receiving.
For example many optical systems of combination or use passive optical network (PON) need be used for simple optical fiber to send and receive information with a plurality of wavelength simultaneously.In the past, this performance be difficult to realize, effective and efficient manner at cost particularly reveals the manufacturing issue that makes this structure too expensive with the combination table of photonic device of all visiting a plurality of dispersions of simple optical fiber.The market of PON system is extremely sensitive to price, and it is feasible economically that this causes the function by the relative broad range of high expectations of this network to be failed.The use of a plurality of photonic devices in other optical system also runs into similar difficulty, such as high definition DVD, even in this application, can not easily obtain required Premium Features by using the photonic device that disperses.
Summary of the invention
According to an aspect of the present invention, solid-state light receive and light ballistic phonon device by monolithic be integrated on the shared substrate, so that a plurality of optical functions on the single chip surface to be provided.Be used to provide the integrated of these devices of bidirectional photonic operation to be optimized by multilayer epitaxial, wherein laser and detector can be manufactured on the separate mesas on the chip, so that the efficient coupling with single optical fiber of laser and detector to be provided.According to a further aspect in the invention, a plurality of optical transmitting set and a plurality of photodetector are manufactured on the single chip to allow the coupling with single optical fiber of a plurality of reflectors and a plurality of detector.Reflector can be the surface emitting device of making on the chip surface, such as the U. S. application No.10/958 that submitted on October 5th, 2004, the application No.10/963 that on October 14th, 069 or 2004 submitted to, described in 739 those, its integral body is incorporated herein by reference, it perhaps can be the edge emitter laser of making on the chip, such as U.S. Patent No. 4,851,368 or IEEE Journal of QuantumElectronics, the volume 8, the 1227-1231 page or leaf, in 1992 5 months described those, wherein optical fiber is coupled in laser output.Detector also can be manufactured on the same chip, and can be surface or the edge receiving device that is coupled with same optical fiber, in order to receive the light signal from optical fiber.In preferred versions of the present invention, all luminous and each detector all receives light with the wavelength different with radiative wavelength to each laser with different wavelength.
Briefly, the present invention combines laser emitter and the photoelectric detector of making on the same chip, be deposited in the on-chip overlapping layer to wherein one or more semiconductor detector structure extensions, and the semiconductor emitter structure by extension be deposited on the top detector structure.The etched one or more emitter mesas that combine surface or edge emitter laser with formation of these structures, be directed to optical fiber in order to will launch light, and form the one or more detector table tops that combine surface or edge reception detector, in order to receive light from optical fiber.As needs, reflector, deflector, prism, grating or other diffraction element and/or lens also can integrally be manufactured on the substrate or be positioned at and this chip by chip part, with direct emitted light or reception light.
In a kind of form of the present invention, single chip integrated photon chip comprises the substrate of bearing semiconductor detector epitaxial structure, and wherein semiconductor laser structure is deposited on the detector arrangement with using the well known deposition techniques extension.Make surface emitting laser in the emitter structures by being etched in, and use by etching and pass this surface emitting laser of groove circumscribe that detector arrangement arrives substrate formation.By etching away the laser structure of covering, expose the surface of the detector arrangement of contiguous laser, separate with it with the detector receiver surface that form to surround or surround substantially laser and by groove, thereby laser and detector form the separate mesas on the shared substrate.The lip-deep metal level of laser provides and has been used to apply electrically contacting of suitable bias voltage, so that laser structure produces the laser of known wavelength.Surface emitting laser upwards guides light beam by outer lens arrival external optical device, such as single optical fiber as light source.Optical fiber also can be guided the light of second wavelength into chip, and wherein this reception light passes lens.Because it is different with the laser wavelength of light emitted to receive light wavelength, receive light and will not be focused back laser, but will guide the zone that surrounds laser source into by lens, here it is received by the detector structure.
In another embodiment of the present invention, the monolithic integrated chip comprises the detector arrangement of two overlapping epitaxial depositions, and wherein single emitter layer superimposed is on top detector structure.Surface emitting laser is manufactured on the table top in the laser structure on this chip by etching, and separates by the detector table top of groove with encirclement.Subsequently, laser structure is removed from the surface of the two-structure detector mesa of encirclement.Can encourage this laser to send the light of first wavelength, this light scioptics is as described above guided optical fiber into.But in this embodiment, two detector arrangement can receive second and the light of three-wavelength respectively.The detector table top is set around the end of surface emitting laser and sidepiece has optimized laser and detector with bidirectional coupled such as the single I/O device of optical fiber with the emitter terminals of basic encirclement laser.
In another embodiment of the present invention, a plurality of surface emitting lasers can be manufactured on each table top in the laser structure of chip side by side, and wherein each laser in the array all sends the light of different wave length.By similar mode, a plurality of other detectors can be manufactured on each table top in the detector arrangement side by side, and wherein each detector can both receive the light of a different wave length.As needs, reflector and detector can be coupled to single optical fiber by external diffraction element and the suitable lens light such as prism.
Edge emitter laser and surface receive or the edge receives the manufacturing that detector also can be used for single chip integrated bidirectional photonic device of the present invention.In a this embodiment, edge emitter laser is manufactured on the table top in the laser structure and reflector is manufactured on the chip in the laser structure of contiguous laser exit surface for example, to guide the emission light of first wavelength vertically upward.Reflector can be in conjunction with smooth or crooked reflector surface upwards to be directed to I/O device such as optical fiber by outer lens with light.Reflector receives detector arrangement by the surface of the exposure on the table top that separates with the laser table top and surrounds, and this surface receives detector arrangement and receives light from second wavelength of optical fiber.In another embodiment, reflector surface comprises dichroic coating, and it reflects the laser of first wavelength and passes through the following detector arrangement of reception light arrival of second wavelength via reflector body.
A plurality of edge emitter laser can be manufactured in the laser structure array on the chip, with by guiding the light of respective wavelength into external fiber such as prism or grating diffration element.This array can comprise that also a plurality of ends of making on the separate mesas in the detector arrangement receive detectors, and they are aligned to the light of reception from the different frequency of optical fiber, thereby the monolithic integrated array according to laser of the present invention and detector channel is provided.
Summary of drawings
Aforementioned and additional purpose, characteristics and advantage of the present invention will also become apparent in conjunction with the accompanying drawings by the following detailed description of its preferred embodiment, in the accompanying drawing:
Fig. 1 shows the double-deck extension chip structure that comprises an on-chip laser structure and detector arrangement.
Fig. 2 shows the end view that the surface of making in the surface emitting laser made in the laser structure according to the chip that comprises Fig. 1 of first embodiment of the invention and the detector arrangement receives the single chip integrated photonic device of detector.
Fig. 3 is the vertical view of Fig. 2 device.
Fig. 4 shows three layers of extension chip structure that comprise an on-chip laser structure and two detector arrangement.
Fig. 5 comprises that according to another embodiment of the present invention two surfaces of making in the surface emitting laser made in the laser structure of chip of Fig. 4 and the detector arrangement receive the end views of the single chip integrated photonic device of detectors.
Fig. 6 combines the vertical view that surface-emitting laser array and surface receive the monolithic integrated photonic device of detector array according to another embodiment of the present invention in corresponding laser and the detector arrangement on co-used chip.
Fig. 7 is and the end view that is used for the laser on the chip and detector are coupled light to Fig. 6 device of the outer prism of optical fiber and combination of lenses.
Fig. 8 combines the end view that the surface of making in the edge emitter laser made in the laser structure of chip of Fig. 1 and the detector arrangement receives detector and combines the single chip integrated photonic device of radiative deflector according to another embodiment of the present invention.
Fig. 9 is the end view of modification of device that combines Fig. 8 of the deflector with curved surface.
Figure 10 is the vertical view of the device of Fig. 9.
Figure 11 is the end view of modification of the photonic device of Fig. 8, and wherein deflector comprises dichroic coating, the light that its reflection laser sends and by via the reception light of deflector main body to following detector arrangement.
Figure 12 is the vertical view of the device of Figure 11.
Figure 13 is the curve chart of reflection characteristic of dichroic filter example that is used for the device of Figure 11.
Figure 14 combines the vertical view that edge emitter laser and edge by the coupling of prism and external fiber receive the single chip integrated photonic device of array of detectors.
Figure 15 combines the vertical view that edge emitter laser and edge by the coupling of grating and external fiber receive the single chip integrated photonic device of array of detectors.
The description of preferred embodiment
Now forward description more specifically of the present invention to, double-deck extension chip 10 has been shown among Fig. 1, it combines first and second epitaxial structures 12 and 14 of mutual superposition on substrate 16.First structure 12 is semi-conducting materials of epitaxial deposition on substrate in the usual way, in order to form the photoelectric detector to the light sensitivity of selected wave band.Second structure 14 is another kind of semi-conducting materials of epitaxial deposition on first substrate 12 equally in the usual way, and can make laser by it.
Structure example on the substrate 16 is as being made of III-V compound or its alloy of suitable doping type.Layer 12 can be by a succession of layer such as organometallic chemistry gas deposition (MOCVD) or molecular beam epitaxy (MBE) homepitaxy depositing operation deposition.Usually, these layers can comprise on the InP substrate with lower floor: the InGaAs n-contact layer that InP layer that the InP transition zone that the InGaAs p-contact layer that the InP resilient coating that the p type mixes, p type mix, p type mix, unadulterated InGaAs detection layers, n type mix and n type mix.
Second structure 14 also can be a succession of layer that deposits on the top surface of structure 12 by MOCVD or MBE technology, to form the optics cavity in conjunction with the active region.Although can make the laser optics chamber of other type according to the present invention,, according to carinate (ridge) laser the present invention is described here for for simplicity.Usually for solid-state carinate laser, structure 14 comprises the clad region up and down that is made of the low index semi-conducting material of comparing with employed semi-conducting material in the central active region such as InP etc., and employed material can constitute with the quantum well and the potential barrier of InAllnGaAs base in the central active region.Except the InGaAs contact layer that the p type mixes, can contact to provide at the transition zone that forms InGaAsP on the top of substrate 14, so that device is connected to bias generator with the resistance of metal layer at top of deposition on the substrate 14.
In the first embodiment of the present invention, shown in Fig. 2 and 3, monolithic photoelectric device or chip 20 combine whole laser 22 and the whole detection device of making on the separate mesas in each structure 12 and 14 of chip 10 24.In structure 14, form laser 22, for example have the elongated horizontal ridge optics cavity of top surface 26, table top sidewall 28 and 30 and first and second ends 32 and 34 to produce by conventional mask and etching technique.Be formed into the total internal reflection surface 35 at angle at first end, 32 places, with the output light that will propagate in the laser upwards guiding leave above-mentioned chamber by the top-emission surface, form second end 34 in chamber simultaneously by vertical total internal reflection surface, to allow in optics cavity, to produce laser.By with respect to top surface 26 with 45 ° or near 45 ° angle downwards and inwardly etch structures 14 make the one-tenth edged surface 35 at 32 places, end, and make the light that generates in the optics cavity with surface 26 and horizontal laser in the vertical substantially direction emission in plane 36 of active material, the emission light beam is upwards advanced on the indicated direction of arrow 37.The restriction of output beam is generally by arrow 38 indications.In this structure, laser 22 and photoelectric detector 24 electricity are mutually isolated and the light isolation.Light is isolated by being improved in conjunction with absorption or barrier layer on laser or detector.The semiconductor of appropriate bandgap can be combined as the additional top in the detector epitaxy, allows the light of other wavelength to pass through simultaneously with a kind of wavelength of high absorption.The metal level that has dielectric layer below is used in the spuious or unwanted radiation of some position blocks from laser.
Second end, 34 places at laser form end face at an angle of 90 with the longitudinal axis with laser chamber.Be adjacent to laser this end be monitor photodetector (MPD) 40, it is formed in the laser epitaxial structure 14 by mask and etching.Laser optical cavity 22 maskedization and being etched with are formed in the structure 14 on the active region 36 and the spine 42 of extending between end 32 and 34; wherein as shown in 44 among Fig. 3; this spine broadens at the emitter terminals place of laser to be provided as the opened areas on the edged surface 35, leaves optics cavity and not distortion thereby allow to launch light beam 37 (can be circular or oval).Top electricity consumption metallization material 46 coatings of spine are to allow coming excitation laser by suitable bias voltage.This metallization material is coated on the top layer of laser structure usually, and it can be the low bandgap semiconductor that contacts with the resistance of metal layer such as permissions such as InGaAs.As needs, hole 48 can be formed in the top layer or several layers of structure 14, may absorb radiative material to remove.
As the mask that forms laser 22 and the part of etching process, make detector 24.As shown in the figure, remove that part of structure 14 that around laser 12, covers detector arrangement 12, to expose the top surface 50 of detector arrangement.The groove 52 that further etch structures 12 separates laser and detector with formation in the zone that directly surrounds laser 22.Groove extends downwards, and preferably extends one and enter substrate 12 to produce laser and detector table top separately than short distance.The detector table top that can further make detector be shaped and be limited by groove 52 to form by a part of removing layer 12 is shown in Fig. 2 and 3.
Can be coupled to outside input-output apparatus by lens 62 from the light of photonic device 20 outputs, such as optical fiber 60.Because aberration, this lens will focus on the light of specific wavelength, and the light of out-focus different wave length.The output light 37 (for example can be the light beam of wavelength 1310nm) that this ability is used to make laser 22 produce in the present invention is focused in the end of optical fiber 60, and is indicated as arrow 64.The wavelength input light 66 different with this output light (for example 1490nm and receive from optical fiber 60) is directed into lens 62, and is as shown in arrow 64.Because its wavelength, this reception light be can't help lens 62 tight focus, and is indicated as beam limit arrow 70.As a result, input light is not focused in the emitter terminals of laser 22, but scatters and hit to the detector 50 of zone in 72, shown in the dotted line among Fig. 3.The decision design of laser and detector table top with the emitter zone basic fixed position of laser in the center of detector 50.If input light 66 is with the wavelength basic identical (for example all being about 1310nm) of output light 37 and in the coupling of scioptics mismatch is arranged between laser and optical fiber, the light detection in the detector 50 is possible.Light between laser and the detector is isolated by pushing up in conjunction with band gap in detector arrangement and being improved greater than 1310nm and less than the corresponding absorption semiconductor layer of the wavelength of 1490nm.This absorbed layer is chosen as the InGaAsP of band gap corresponding to 1440nm.This absorbed layer absorbs unwanted 1310nm light, allows 1490nm to be used for detecting by arriving detector simultaneously.
Fig. 4 shows the second embodiment of the present invention, and its chips 78 comprises three epitaxial structures that are manufactured on the substrate 86, i.e. detector 80 and 82 and laser 84.These semiconductor structures can share shared layer so that the manufacturing of device.For example, the semiconductor layer of high doped can be introduced between detector layer 80 and 82 so that ground plane to be provided, thereby improves electrical isolation and high speed performance.
Single chip integrated photonic device 90 as shown in Figure 5 can be made according to the described mode of above device with respect to Fig. 2 and 3 by chip 78.In this case, make laser 92 by mask in the laser structure 84 with being etched in, wherein said etching formation one is similar to the groove of the groove 52 of Fig. 3, it extends through the top that detector arrangement 80 and 82 arrives substrate 86 downwards, makes laser and detector on every side be positioned on the table top separately.Etched lasers is to be formed into edged surface 94, and it is reflected in the light of upwards propagating and leave laser in the laser.Emission light beam 96 with the restriction that is limited by arrow 98 upwards is directed to lens 100, and it focuses on I/O device 102 such as optical fiber with this light, and is indicated as arrow 104.
Remove laser structure 84 by etching from the top surface 110 of detector arrangement 82, be exposed to the light beam 114 that receives from optical fiber 102 by photonic device 90 with the detector layer 80 and 82 that the surface is received.This receives the different of light wavelength and emission light beam 96, so is directed on the detector surface 110 by lens 100, shown in arrow 114 and with respect to Fig. 2 and 3 described.Detector arrangement 82 in response to the wavelength of this light beam to produce suitable output by the electrode that links to each other with detector 82.In addition, photonic device 90 can be in response to second input beam 116 of a wavelength again, and it is directed to by lens 100 on the top surface 110 of detector arrangement 82, and is indicated as arrow 116.Detector arrangement 82 is not in response to this light beam, and this light is by it.Shown in arrow 116, following detector arrangement 80 receives this light beam and produces corresponding output in response to it on the suitable electrodes (not shown).
Can be called triplexer (triplexer) but the light of photonic device 90 emission wavelengths in 1310nm ± 40nm scope, the band gap that can select simultaneously detector layer is so that the light of detector 80 range of receiving among 1550nm ± 10nm, and the interior light of detector 82 range of receiving 1490nm ± 10nm.For this reason, the band gap of detector 82 is selected as detecting the light that is lower than 1520nm, so that the longer light of wavelength arrives following detector arrangement 80 by it.Detector arrangement 80 can be that broadband detector or its band gap are optimised for the detector that receives the light of wavelength below 1580nm.
Though the single detector position that the foregoing description shows single laser transmitter positions and surrounds this generating laser, but obvious integrated photonic device of the present invention can be in conjunction with a plurality of laser positions and a plurality of detector location on single chip, for example shown in the vertical view of Fig. 6.In the figure, photon chip 130 combines the array 132 of the surface emitting laser of making as mentioned above in an epitaxial laser structure, such as laser 134,136,138 and 14.Laser can be illustrated as and form general parallel light transmission channel, although can use other chip architecture designs.Preferably, as shown in Figure 7, for convenient output beam with them upwards is directed to shared I/O optical fiber 150, the emitter surface 142,144,146 and 148 of laser is combined by suitable external optical device (such as prism 152 and lens 154 and 155) respectively.
As shown in the figure, can provide the MPD device to be used to monitor each laser, shown in 172,174,176 and 178, and as need and on the surface of chip 130, to provide suitable weld zone 180 and earth connection 182 by known way.In previous embodiment of the present invention, laser 132 is made in first epitaxial structure, and detector is made in on-chip second epitaxial structure.Each laser in the array 132 can send the light of different-waveband; For example surface emitting laser 134,136 and 140 can send the light of wavelength 1470nm, 1490nm, 1510nm and 1530nm respectively.Similarly, detector 162,164,166 and 168 for example can detect the light of 1550nm, 1570nm, 1590nm and 1610nm wave band respectively.
For between some lasers, having bigger wavelength change, for example be used for application such as the Coarse Wavelength Division Multiplexing (CWDM) of the about 20nm of channel spacing, as above-mentioned first or the active region of the laser structure of top epitaxial structure need revise its band gap and make the laser of suitable wavelength to allow for laser array.This can be by being used to form first epitaxial structure one of many already known processes finish; For example by the expansion of free from admixture room or by many epitaxial depositions.
Single chip integrated reflector of the present invention and detector also can be manufactured to by the mode shown in Fig. 8-15 has the edge emitter laser (EEL) that the surface receives detector, now it is carried out reference.Shown in the end view of Fig. 8, laser/detector chip 200 comprises edge emitter laser 202, it for example can be Fabry-Perot (FP) laser of making in the epitaxial laser structure 204, and the surface of making in the extension detector arrangement 208 of substrate 210 receives detector 206.These structures form by aforementioned mask and etching technique, and difference is that reflective base element 212 is arranged at the emitter facet 214 that is adjacent to laser 202 and aims at it but be spaced from each other.
Perhaps, can make primary element 212 by the electron beam deposition of for example silicon, on detector 206 tops, provide structure easily to be used for the output of reflection EEL 202 on the direction vertical with chip surface via (lift-off) technology that raises.
Show another replacement scheme as Figure 11 and 12, wherein edge emitter laser 250 receives detector 252 with the surface and is integrated on the substrate 254, and wherein reflective base element 256 is installed on the surface of detector or is positioned its top.Primary element 256 comprises the dichroic filter 262 on smooth or curved surface 260 and the surface 260.Filter can be the laminated coating on the surface 260, and it can be designed to reflect a wave band and allow another wave band to pass through.For example, the I/O device that will be arrived such as optical fiber 268 by external optical device 266 by reflection almost completely upwards from face 266 emitted light beams 264 of laser 250 (its wave band is 1310nm ± 40nm (and being the s polarization substantially) and is directed on the filter 262 with 45 ° angle).The input light 270 that can have wave band 1490nm ± 10nm also is directed to filter 262 with 45 ° angle, but its wavelength almost completely by transmission by filter to following detector 252.Shown in the vertical view of Figure 12, receive light 270 and be directed into detector in the dotted line 272, comprised the zone below the primary element 256, thereby bigger area of detection to be provided and to provide receiving the bigger sensitivity of light.
Show the reflection of typical dichroic filter and the relation between the wavelength behavior by curve 280 and 282 among Figure 13.In this case, primary element is that InP and foreign medium are air, and nine layers are used to use the conventional design technology to make filter.
Figure 14 and 15 shows at the sheet that has such as lens and prism and carries edge emitter laser integrated on the chip of optical element and edge reception array of detectors.Among Figure 14, the array 290 of edge emitter laser and edge receive array of detectors 292 and are manufactured in the epitaxial laser separately and detector arrangement on the shared substrate.Utilize U.S. Patent No. 6,653,244 described technologies, sheet carry lens 294 and 296 and prism 298 be manufactured to array 290 and 292 in laser and the optical axis alignment of detector, being directed to optical fiber 302 from the light 300 that laser sends.Optical element will be directed to the detector of array 292 from the reception light 304 of optical fiber 302 similarly.Perhaps, carry grating 306 with sheet and replace sheets and carry prism 298, with the bigger decentralization of the wavelength that allows close interval, as shown in figure 15.By revising the framework of chip, other array that is used for the close interval laser channels of different optical wavelength can be formed at same first epitaxial structure.
Though according to preferred embodiment the present invention has been described, has been appreciated that and carries out various variants and modifications and do not deviate from its real spirit and scope described in following claims.
Claims (41)
1. photonic device comprises:
Substrate;
The described on-chip at least the first and second overlapped epitaxial structures;
At least the first etching face photonic element of in described first epitaxial structure, making; And
At least the second photonic element of in described second epitaxial structure, making.
2. device as claimed in claim 1 is characterized in that, the described first etching face photonic element is at least one laser with emitter terminals.
3. device as claimed in claim 2 is characterized in that, described etching face is positioned at the described emitter terminals of described laser with about 45 ° angle, so that a surface emitting laser to be provided.
4. device as claimed in claim 1 is characterized in that, described second photonic element is at least one fluorescence detector.
5. device as claimed in claim 4 is characterized in that, described first photonic element is at least one laser with transmitting terminal.
6. device as claimed in claim 5 is characterized in that described detector surrounds the emitter terminals of described laser substantially.
7. device as claimed in claim 4 is characterized in that, described detector is the p-i-n diode.
8. device as claimed in claim 4 is characterized in that described detector is an avalanche photodetector.
9. device as claimed in claim 5 is characterized in that, described laser is manufactured to the light of emission first wavelength, and described detector is manufactured to the light that detects second wavelength.
10. device as claimed in claim 9 is characterized in that described laser is a surface emitting laser.
11. device as claimed in claim 9 is characterized in that, described laser and described detector are on the described on-chip table top that separates.
12. device as claimed in claim 3 is characterized in that, also comprises the external optical element that couples light to optical fiber that is used for from described laser emission.
13. device as claimed in claim 12 is characterized in that, described external optical element comprises that the light that is used for sending from described laser is directed to the lens of described optical fiber.
14. device as claimed in claim 10, it is characterized in that, comprise that also the light that is optimised for described first wavelength focuses on the outer lens on the external optical device, and described lens described second wavelength that will receive from described external optical device couple light to described detector.
15. device as claimed in claim 2, it is characterized in that, described laser is the edge emitter laser that is manufactured to the first wavelength emission light, described second photonic element is to be manufactured to the detector that detects light with second wavelength, and wherein said laser and described detector are positioned on the described on-chip table top that separates.
16. device as claimed in claim 15 is characterized in that, also comprises the described on-chip optical element with described laser alignment, in order to coupling light to external optical device from what described laser sent.
17. device as claimed in claim 16 is characterized in that, described optical element is lens.
18. device as claimed in claim 16 is characterized in that, described optical element is a diffraction element.
19. device as claimed in claim 16 is characterized in that, described optical element is a reflector.
20. device as claimed in claim 16 is characterized in that, described external optical device comprises the lens that are used for emission light is directed to optical fiber.
21. device as claimed in claim 20 is characterized in that, described lens are optimised for described emission are coupled light to described optical fiber, second wavelength that described lens will receive from described optical fiber couple light to described detector.
22. device as claimed in claim 21, it is characterized in that, described optical element is the reflector that is used for the light of described laser emission is deflected into described lens on the described substrate, and described reflector is located on the described detector to allow detection by the light of described lens from described second wavelength of described optical fiber reception.
23. device as claimed in claim 21 is characterized in that, described optical element is a dichroic filter, is used for the light of described laser emission is deflected into described lens and is used for transmission by the light of described lens from described second wavelength of described optical fiber reception.
24. device as claimed in claim 1 is characterized in that, also comprises described on-chip at least the three epitaxial structure, described epitaxial structure with the multilayer stack, is wherein made the three-photon element in described the 3rd structure on described substrate.
25. device as claimed in claim 24, it is characterized in that, described first photonic element is the laser that is manufactured into the light of emission first wavelength, described second photonic element is the detector that is manufactured to the light that detects second wavelength, and described three element is the detector that is manufactured to the light that detects three-wavelength.
26. device as claimed in claim 24 is characterized in that, described first photonic element is positioned on described on-chip first table top, described second and the three-photon element be positioned on described on-chip second table top.
27. device as claimed in claim 26 is characterized in that, described laser is a surface emitting laser.
28. device as claimed in claim 26 is characterized in that, described laser is an edge emitter laser.
29. device as claimed in claim 1 is characterized in that, described first photonic element comprises laser array.
30. device as claimed in claim 29 is characterized in that, described second photonic element comprises detector array, and wherein each laser is all launched the light of different-waveband, and each detector all detects the wave band reception light different with described radiative wave band.
31. device as claimed in claim 30 is characterized in that, also comprises described on-chip optical element, is used for the described detector that couples light to that emission is coupled light to external fiber and is used for receiving from described optical fiber.
32. device as claimed in claim 1 is characterized in that, described first and second photonic elements are isolated by light.
33. device as claimed in claim 1 is characterized in that, described first and second photonic elements are isolated by electricity.
34. device as claimed in claim 1 is characterized in that, described first and second elements are positioned on the described on-chip separate mesas.
35. on single chip, make and be used for the integrated laser of bidirectional photonic operation and the method for detector devices for one kind, comprising:
First and second overlapping on one substrate epitaxial structures are provided;
In described first structure, make the laser that at least one is used to launch the light of first wavelength;
In described second structure, make the detector that at least one is used to receive and detect the light of second wavelength;
Described emission is coupled light to external optical device; And
To couple light to described detector from the reception of described external optical device.
36. method as claimed in claim 35 is characterized in that, makes described at least one laser and comprises the manufacturing laser array, each all launches the light of different wave length, and
Wherein make described at least one detector and comprise that manufacturing is used to receive the detector array that wavelength is different from the light of described emission wavelength.
37. device as claimed in claim 1 is characterized in that, also comprises the base portion on described second photonic device.
38. device as claimed in claim 37 is characterized in that, described base portion is made of silicon.
39. device as claimed in claim 37 is characterized in that, described base portion is made of described first epitaxial structure.
40. device as claimed in claim 37 is characterized in that, also comprises the described base portion that optical coating forms.
41. device as claimed in claim 40 is characterized in that, described coating provides dichroic filter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53724804P | 2004-01-20 | 2004-01-20 | |
| US60/537,248 | 2004-01-20 | ||
| US60/618,134 | 2004-10-14 |
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| CN1910735A true CN1910735A (en) | 2007-02-07 |
| CN100405538C CN100405538C (en) | 2008-07-23 |
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| CNB2005800027111A Active CN100405538C (en) | 2004-01-20 | 2005-01-19 | Integrated photonic devices |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104395798A (en) * | 2012-07-30 | 2015-03-04 | 惠普发展公司，有限责任合伙企业 | Compact photonic platforms |
| CN106170898A (en) * | 2013-11-07 | 2016-11-30 | 镁可微波技术有限公司 | There is beam shape and the laser instrument of beam direction amendment |
| US10209445B2 (en) | 2012-07-30 | 2019-02-19 | Hewlett Packard Enterprise Development Lp | Method of fabricating a compact photonics platform |
| CN109655806A (en) * | 2017-10-11 | 2019-04-19 | 迈来芯科技有限公司 | Sensor device |
| CN114545550A (en) * | 2018-02-13 | 2022-05-27 | 苹果公司 | Integrated photonic device with integrated edge outcoupling |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3882210B2 (en) * | 1995-09-13 | 2007-02-14 | ソニー株式会社 | Optical device |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
| US20020175334A1 (en) * | 2001-05-22 | 2002-11-28 | Motorola, Inc. | Optical data converter |
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- 2005-01-19 CN CNB2005800027111A patent/CN100405538C/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104395798A (en) * | 2012-07-30 | 2015-03-04 | 惠普发展公司，有限责任合伙企业 | Compact photonic platforms |
| US9995876B2 (en) | 2012-07-30 | 2018-06-12 | Hewlett Packard Enterprise Development Lp | Configurable compact photonic platforms |
| US10209445B2 (en) | 2012-07-30 | 2019-02-19 | Hewlett Packard Enterprise Development Lp | Method of fabricating a compact photonics platform |
| CN104395798B (en) * | 2012-07-30 | 2019-03-01 | 慧与发展有限责任合伙企业 | Compact optical sub-platform |
| CN106170898A (en) * | 2013-11-07 | 2016-11-30 | 镁可微波技术有限公司 | There is beam shape and the laser instrument of beam direction amendment |
| CN109655806A (en) * | 2017-10-11 | 2019-04-19 | 迈来芯科技有限公司 | Sensor device |
| CN109655806B (en) * | 2017-10-11 | 2024-01-26 | 迈来芯科技有限公司 | Sensor device |
| CN114545550A (en) * | 2018-02-13 | 2022-05-27 | 苹果公司 | Integrated photonic device with integrated edge outcoupling |
| CN114545550B (en) * | 2018-02-13 | 2024-05-28 | 苹果公司 | Integrated photonic device with integrated edge out-coupler |
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| CN100405538C (en) | 2008-07-23 |
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