CN1853140B - 正型抗蚀剂组合物和形成抗蚀图案的方法 - Google Patents

正型抗蚀剂组合物和形成抗蚀图案的方法 Download PDF

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Publication number
CN1853140B
CN1853140B CN2004800266315A CN200480026631A CN1853140B CN 1853140 B CN1853140 B CN 1853140B CN 2004800266315 A CN2004800266315 A CN 2004800266315A CN 200480026631 A CN200480026631 A CN 200480026631A CN 1853140 B CN1853140 B CN 1853140B
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China
Prior art keywords
acid
structural unit
component
dissolution inhibiting
resist composition
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CN2004800266315A
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Chinese (zh)
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CN1853140A (zh
Inventor
山崎晃义
谷和夫
本池直人
前盛论
吉泽佐智子
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority claimed from JP2004119494A external-priority patent/JP4242317B2/ja
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Priority claimed from PCT/JP2004/013633 external-priority patent/WO2005026842A1/ja
Publication of CN1853140A publication Critical patent/CN1853140A/zh
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  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2004800266315A 2003-09-18 2004-09-17 正型抗蚀剂组合物和形成抗蚀图案的方法 Active CN1853140B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2003326146A JP4184209B2 (ja) 2003-09-18 2003-09-18 ポジ型レジスト組成物およびレジストパターン形成方法
JP326146/2003 2003-09-18
JP2003331606 2003-09-24
JP331606/2003 2003-09-24
JP119494/2004 2004-04-14
JP2004119494A JP4242317B2 (ja) 2003-09-24 2004-04-14 ポジ型レジスト組成物およびレジストパターン形成方法
PCT/JP2004/013633 WO2005026842A1 (ja) 2003-09-18 2004-09-17 ポジ型レジスト組成物およびレジストパターンの形成方法

Publications (2)

Publication Number Publication Date
CN1853140A CN1853140A (zh) 2006-10-25
CN1853140B true CN1853140B (zh) 2010-08-25

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JP (1) JP4184209B2 (ja)
CN (1) CN1853140B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4308051B2 (ja) 2004-03-22 2009-08-05 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
CN102147568A (zh) * 2010-02-09 2011-08-10 台湾积体电路制造股份有限公司 光刻图案化方法及双重图案化方法
JP6296972B2 (ja) * 2014-02-17 2018-03-20 富士フイルム株式会社 パターン形成方法、エッチング方法、及び、電子デバイスの製造方法
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물
CN111198479B (zh) * 2018-11-20 2024-05-28 东京应化工业株式会社 抗蚀剂组合物以及抗蚀剂图案形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000086584A (ja) * 1998-07-15 2000-03-28 Honshu Chem Ind Co Ltd 新規なトリスフェノ―ルエ―テル類
US6511794B1 (en) * 2000-03-27 2003-01-28 Oki Electric Industry Co., Ltd. Method of forming resist pattern, and exposure device
WO2004059392A1 (ja) * 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000086584A (ja) * 1998-07-15 2000-03-28 Honshu Chem Ind Co Ltd 新規なトリスフェノ―ルエ―テル類
US6511794B1 (en) * 2000-03-27 2003-01-28 Oki Electric Industry Co., Ltd. Method of forming resist pattern, and exposure device
WO2004059392A1 (ja) * 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法

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Publication number Publication date
JP4184209B2 (ja) 2008-11-19
CN1853140A (zh) 2006-10-25
JP2005091863A (ja) 2005-04-07

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