CN1851904A - 抗esd集成soi ligbt器件单元的工艺方法 - Google Patents
抗esd集成soi ligbt器件单元的工艺方法 Download PDFInfo
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- CN1851904A CN1851904A CN 200610050900 CN200610050900A CN1851904A CN 1851904 A CN1851904 A CN 1851904A CN 200610050900 CN200610050900 CN 200610050900 CN 200610050900 A CN200610050900 A CN 200610050900A CN 1851904 A CN1851904 A CN 1851904A
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CNB2006100509002A CN100433299C (zh) | 2006-05-24 | 2006-05-24 | 抗esd集成soi ligbt器件单元的工艺方法 |
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CNB2006100509002A CN100433299C (zh) | 2006-05-24 | 2006-05-24 | 抗esd集成soi ligbt器件单元的工艺方法 |
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CN1851904A true CN1851904A (zh) | 2006-10-25 |
CN100433299C CN100433299C (zh) | 2008-11-12 |
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CNB2006100509002A Expired - Fee Related CN100433299C (zh) | 2006-05-24 | 2006-05-24 | 抗esd集成soi ligbt器件单元的工艺方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157434A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI LIGBT器件单元的制作方法 |
CN102169831A (zh) * | 2011-03-10 | 2011-08-31 | 杭州电子科技大学 | 具有p埋层的横向沟道SOI LIGBT器件单元的制作方法 |
CN104795379A (zh) * | 2015-04-30 | 2015-07-22 | 南通大学 | 差分共面传输线封装引脚内外级联结构 |
CN116779666A (zh) * | 2023-08-22 | 2023-09-19 | 深圳芯能半导体技术有限公司 | 一种带esd结构的igbt芯片及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6191453B1 (en) * | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
WO2003038903A1 (en) * | 2001-11-01 | 2003-05-08 | Koninklijke Philips Electronics N.V. | Lateral isolated gate bipolar transistor device |
US6861711B2 (en) * | 2003-01-03 | 2005-03-01 | Micrel, Incorporated | Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors |
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2006
- 2006-05-24 CN CNB2006100509002A patent/CN100433299C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157434A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI LIGBT器件单元的制作方法 |
CN102169831A (zh) * | 2011-03-10 | 2011-08-31 | 杭州电子科技大学 | 具有p埋层的横向沟道SOI LIGBT器件单元的制作方法 |
CN102157434B (zh) * | 2011-03-10 | 2012-12-05 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI LIGBT器件单元的制作方法 |
CN104795379A (zh) * | 2015-04-30 | 2015-07-22 | 南通大学 | 差分共面传输线封装引脚内外级联结构 |
CN104795379B (zh) * | 2015-04-30 | 2017-06-27 | 南通大学 | 差分共面传输线封装引脚内外级联结构 |
CN116779666A (zh) * | 2023-08-22 | 2023-09-19 | 深圳芯能半导体技术有限公司 | 一种带esd结构的igbt芯片及其制作方法 |
CN116779666B (zh) * | 2023-08-22 | 2024-03-26 | 深圳芯能半导体技术有限公司 | 一种带esd结构的igbt芯片及其制作方法 |
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CN100433299C (zh) | 2008-11-12 |
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Owner name: HAIAN TIANRUN MECHANICAL TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HANGZHOU ELECTRONIC SCIENCE AND TECHNOLOGY UNIV Effective date: 20140709 |
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Effective date of registration: 20140709 Address after: Eleven Ge Village East of the town of Haian County of Jiangsu Province, Nantong City, 226600 Patentee after: Haian Tianrun Mechanical Technology Co., Ltd. Address before: Hangzhou City, Zhejiang province 310018 Jianggan District Xiasha Higher Education Park No. 2 street Patentee before: Hangzhou Electronic Science and Technology Univ |
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Granted publication date: 20081112 Termination date: 20160524 |