CN1845296A - Method and apparatus for aiming at wafer direction using laser - Google Patents
Method and apparatus for aiming at wafer direction using laser Download PDFInfo
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- CN1845296A CN1845296A CN 200510063365 CN200510063365A CN1845296A CN 1845296 A CN1845296 A CN 1845296A CN 200510063365 CN200510063365 CN 200510063365 CN 200510063365 A CN200510063365 A CN 200510063365A CN 1845296 A CN1845296 A CN 1845296A
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- crystal orientation
- alignment
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Abstract
The related method for lattice orientation aligning with laser comprises: with a beam of laser to through a small diaphragm into the cleavage surface of the wafer, adjusting the wafer orientation to let the incidence laser reflect through the former diaphragm along the inverse direction of incidence; after adjusting another wafer, moving one wafer slowly to another one for face-to-face nearness for the aligning. This invention is easy to operate precisely for spread in industry.
Description
Technical field
The present invention relates to the alignment methods and the device in a kind of wafer crystal orientation, particularly relate to a kind of method and device that utilizes laser alignment wafer crystal orientation.
Background technology
When processing as bonding, need to aim at the crystal orientation of these wafers usually to the polylith wafer.The wafer glazing that traditional crystal orientation alignment methods is aimed at needs earlier usually engraves mark, realize the crystal orientation aligning by dual surface lithography then, detailed process is: load first wafer (abbreviating top wafer as), open illumination, by moving or rotation bottom microscope (BSA, bottom microscope) and wafer seek alignment mark, make it to be in field of view, focusing on then makes imaging clear, note down hypograph and on monitor, show locking microscope and top wafer with charge-coupled device (CCD); Load second wafer (abbreviation bottom wafer) then, make its back side alignment mark (or corrosion window) be in the visual field district by the shift position, focusing makes its imaging clear; Directly observe real-time wafer photo, by moving or rotating this wafer its alignment mark is overlapped with top wafer alignment mark position then, like this, just can realize the double-sided alignment of two wafers by monitor.The precision of this kind alignment methods depends on the precision of photoetching process, has report to realize that precision aims in the crystal orientation of 0.3 degree, referring to document 1: the large tracts of land bonding of gallium arsenic material in the atmosphere of hydrogen under the ultra-high vacuum environment, the 13rd～19 page 2000 of Applied Physics A the 70th volume.
The process that existing method not only makes the crystal orientation aim at is complicated, and precision is not high, generally about 0.5 °.Therefore just need be a kind of simple, convenient, the alignment precision height is easy to the wafer crystal orientation alignment methods of applying industrial.
Summary of the invention
The objective of the invention is to overcome existing wafer crystal orientation alignment methods too complexity and the not high shortcoming of alignment precision, provide a kind of laser that utilizes to realize method and device that the wafer crystal orientation is aimed at.
For achieving the above object, the present invention takes following technical scheme:
A kind of method of utilizing laser alignment wafer crystal orientation, step is as follows:
1. utilize wafer cleavage technology, on two wafers, cleavage goes out a neat cleavage surface respectively;
2. will be fixed on that two suckers on the adjusting bracket are placed in opposite directions and coincide, and adjust adjusting bracket and make its keeping parallelism, translation is removed then, and two wafers are placed in respectively on two suckers, utilizes beam of laser to incide on the cleavage surface of first wafer;
3. adjust the orientation of first wafer, make the laser that incides on this wafer cleavage surface reflect along the direction opposite with incident direction;
4. keep laser optical path to fix, laser optical path is left in first wafer translation;
5. move second wafer and make it enter laser optical path, and make laser incide on the cleavage surface of second wafer, second wafer adjusted according to step 3;
6. at least one wafer among two wafers of translation makes two wafer face opposites be close to, and finishes wafer crystal orientation alignment procedures.
In the above-mentioned steps 2, described beam of laser is to incide on the described cleavage surface of described wafer by an aperture;
In the above-mentioned steps 2, described beam of laser can be by red light semiconductor laser, or helium neon laser, or the beam of laser sent of all solid state laser;
In the above-mentioned steps, the orientation of described adjustment wafer is to realize by wafer is fixed on the five times regualting frame, and this five times regualting frame can horizontally rotate, vertical rotation, three-dimensional translating;
In the above-mentioned steps, described reverberation returns through aperture;
In the above-mentioned steps, described wafer comprises silicon chip, gallium arsenide film, gallium nitride sheet, indium phosphide sheet, silicon epitaxial wafer, also comprises the III-V compound semiconductor epitaxial wafer of GaAs, indium phosphide substrate, the II-VI compound semiconductor epitaxial wafer of gallium nitride substrate.
Method provided by the invention can be aimed at the crystal orientation of polylith wafer, concrete grammar is: after realizing that according to above-mentioned steps 1-6 the crystal orientation of two wafers is aimed at, with the 3rd wafer repeating step 1-5, make the 3rd wafer the crystal orientation with preceding two parallel, this wafer of translation and preceding two wafer face opposites are close to then, finish three wafer crystal orientation alignment procedures; For three above wafers, and the like repeat said process.
A kind of device that utilizes laser alignment wafer crystal orientation as shown in Figure 1, comprising:
First adjusting bracket 1 and second adjusting bracket 6 are placed in opposite directions;
First sucker 2 and second sucker 5 are separately fixed on first adjusting bracket 1 and second adjusting bracket 6, are used for placing respectively first wafer 3 and second wafer 4 for the treatment of bonding;
Laser 8 is placed on the side of first adjusting bracket 1 and second adjusting bracket 6.
In technique scheme, this device also comprises an aperture 7 that is placed on the light-emitting window front of laser 8, and the laser that laser 8 sends is through aperture 7;
In technique scheme, described first adjusting bracket 1 and second adjusting bracket 6 are five times regualting frame, can horizontally rotate, vertical rotation, three-dimensional translating;
In technique scheme, described laser 8 can be a red light semiconductor laser, or helium neon laser, or all solid state laser;
In technique scheme, described first wafer 3 or second wafer 4 are silicon chips, or gallium arsenide film, or gallium nitride sheet, or indium phosphide sheet, or silicon epitaxial wafer, can also be the III-V compound semiconductor epitaxial wafer of GaAs or indium phosphide substrate, or the II-VI compound semiconductor epitaxial wafer of gallium nitride substrate.
The device course of work provided by the invention is as follows:
With first sucker 2 with second sucker 5 is placed in opposite directions and coincide, adjust first adjusting bracket 1 and second adjusting bracket 6 and make first sucker 2 and second sucker, 5 keeping parallelisms, translation is removed then, like this, be installed in the just basic keeping parallelism of bonding face of first wafer 3 on sucker 2 and the sucker 5 and second wafer 4; The laser that laser 8 sends incides on the cleavage surface of first wafer 3 (or second wafer 4); Adjust the orientation of first wafer 3 (or second wafer 4) by first adjusting bracket 1 (or second adjusting bracket 6), make the reverberation that incides the laser on this wafer cleavage surface along the direction reflection opposite with incident direction; Keep laser optical path to fix, laser optical path is left in this wafer translation; Moving another piece wafer makes it enter laser optical path, and make laser incide on the cleavage surface of this wafer, this wafer is carried out orientation adjustment after the same method, make the reverberation that incides the laser on this wafer cleavage surface along the direction reflection opposite with incident direction; At least one wafer among two wafers of translation makes two wafer face opposites be close to, and finishes wafer crystal orientation alignment procedures.
Device provided by the invention can be aimed at the crystal orientation of polylith wafer, detailed process is: after realizing that according to said process the crystal orientation of two wafers is aimed at, the 3rd wafer repeated the same orientation adjustment process, make the 3rd wafer the crystal orientation with preceding two parallel, this wafer of translation and preceding two wafer face opposites are close to then, finish three wafer crystal orientation alignment procedures; For three above wafers, and the like repeat said process.
Compared with prior art, the invention has the beneficial effects as follows:
Method provided by the invention and install simple, conveniently, the alignment precision height is widely used in industrial processes; The precision that the crystal orientation is aimed at depends on the length of light path of laser and the size of aperture, and apart from 1 meter of wafer, the diameter of getting aperture is 1mm as aperture, and then the alignment precision of two parallel crystal faces is 0.029 degree.
Description of drawings
Fig. 1 is the schematic diagram of one embodiment of the invention;
The drawing explanation:
1 expression, first five times regualting frame; 2 expressions, first sucker;
First wafer of 3 expressions; Second wafer of 4 expressions;
5 expressions, second sucker; 6 expressions, second five times regualting frame
7 expression apertures; 8 expression lasers.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Embodiment 1
As shown in Figure 1, first wafer 3 selected the Si epitaxial wafer for use, and crystal orientation (100) are of a size of 2 inches, and thickness is 380 microns, and cleavage goes out (110) cleavage surface; Second wafer 4 selected the GaAs epitaxial wafer for use, and crystal orientation (100) are of a size of 2 inches, and thickness is 350 microns, and cleavage goes out (110) cleavage surface; First wafer 3 is fixed on first five times regualting frame 1 by first sucker 2, and second wafer 4 is fixed on second five times regualting frame 6 by second sucker 5, and two five times regualting frames all can horizontally rotate, vertical rotation, three-dimensional translating; First sucker 2 and second sucker 5 are placed in opposite directions, regulated two five times regualting frames and make the bonding face of first wafer 3 and second wafer 4 substantially parallel; First sucker 2 and second sucker 5 are all selected vacuum cup for use; Laser 8 adopts helium neon laser, and the spot diameter that sends laser is about 2mm.
At first, with first sucker 2 with second sucker 5 is placed in opposite directions and coincide, adjust first five times regualting frame 1 and second five times regualting frame 6 and make first sucker 2 and second sucker, 5 keeping parallelisms, translation is removed then, then, first wafer 3 and second wafer 4 are fixed on first sucker 2 on first five times regualting frame 1 staggered relatively and second five times regualting frame 6, second sucker 5 and at a distance of about 3mm; Like this, the bonding face of first wafer 3 and second wafer 4 basic keeping parallelism just.
Secondly, the He-Ne Lasers that laser 8 sends incides on cleavage surface (110) crystal face of second wafer 4, by regulating second five times regualting frame 6, make reflector laser return along the direction of incident laser substantially, lock second five times regualting frame 6, second wafer 4 of translation is away from laser optical path downwards along axial (being meant above-below direction in the present embodiment) of this adjusting bracket then, and laser optical path is maintained fixed in this process.
Then, first wafer 3 moved to the zone of laser radiation, laser is incided on cleavage surface (110) crystal face of first wafer 3, regulate first five times regualting frame 1 and make the reverberation of He-Ne Lasers return along the direction of incident laser substantially, lock first five times regualting frame 1.At this moment, the crystal orientation of first wafer 3 and second wafer 4 has been realized parallel.
At last, finish the crystal orientation parallel after, move axially one of them wafer, present embodiment is parallel to be moved second wafer 4 and makes two wafer face opposites be close to, and finishes two plates crystal orientation alignment procedures.Two wafers placing are in opposite directions transferred in the application of force vacuum chamber simultaneously, and heating, pressurization finally realize wafer bonding.
Embodiment 2
In order to improve the precision that the crystal orientation is aimed at, this device also comprises an aperture 7 that is placed on the light-emitting window front of laser 8 on the basis of embodiment 1, and laser is through this aperture 7.Aperture 7 is selected homemade aperture for use, stabs the little pin hole that diameter is 1mm on the circular thick paper of diameter 30mm thickness 0.1mm that is:, this thick paper is fixed on the support (not shown) that can move up and down then.In this embodiment course of work, He-Ne Lasers incides on the cleavage surface of wafer by this aperture 7, and the orientation of adjusting wafer makes that laser light reflected is returned by aperture 7 on the cleavage surface, can improve alignment precision like this.Alignment precision depends on the length of light path of laser and the pinhole size of pin hole screen, and aperture 7 is far away apart from 1 meter of wafer end face in the present embodiment, and the diameter of aperture 7 is 1mm, and then the alignment precision of two parallel crystal faces is 0.5*10
-3* 180/ (1*3.14)=0.029 is spent.
Wafer crystal orientation for the identical crystal orientation of polylith is aimed at, and the method and apparatus that can adopt present embodiment to provide is realized wafer crystal orientation aligning one by one, and those skilled in the art can directly implement according to present embodiment.
Claims (10)
1. method of utilizing laser alignment wafer crystal orientation is characterized in that step is as follows:
1) utilize wafer cleavage technology, on two wafers, cleavage goes out a neat cleavage surface respectively;
2) adjust the basic keeping parallelism of bonding face that makes two wafers, utilize beam of laser to incide on the cleavage surface of first wafer;
3) orientation of first wafer of adjustment makes the reverberation that incides the laser on this wafer cleavage surface along the direction reflection opposite with incident direction;
4) keep laser optical path to fix, laser optical path is left in first wafer translation;
5) move second wafer and make it enter laser optical path, and make laser incide on the cleavage surface of second wafer, second wafer adjusted according to step 3;
6) at least one wafer among two wafers of translation makes two wafer face opposites be close to, and finishes wafer crystal orientation alignment procedures.
2. the method in alignment wafer according to claim 1 crystal orientation is characterized in that, described step 2) in, described beam of laser is to incide on the described cleavage surface of described wafer by an aperture.
3. the method in alignment wafer according to claim 1 crystal orientation is characterized in that, described step 2) in, described beam of laser can be by red light semiconductor laser, or helium neon laser, or the beam of laser sent of all solid state laser.
4. the method in alignment wafer according to claim 2 crystal orientation is characterized in that, in the described step 3), described reverberation is by described aperture.
5. the method in alignment wafer according to claim 1 crystal orientation, it is characterized in that, described wafer comprises silicon chip, gallium arsenide film, gallium nitride sheet, indium phosphide sheet, silicon epitaxial wafer, also comprises the III-V compound semiconductor epitaxial wafer of GaAs, indium phosphide substrate, the II-VI compound semiconductor epitaxial wafer of gallium nitride substrate.
6. device that utilizes laser alignment wafer crystal orientation comprises:
First adjusting bracket (1) and second adjusting bracket (6) are placed in opposite directions;
First sucker (2) and second sucker (5) are separately fixed on first adjusting bracket (1) and second adjusting bracket (6), are used for placing respectively first wafer (3) and second wafer (4) for the treatment of bonding;
It is characterized in that, also comprise:
Laser (8) is placed on the side of first adjusting bracket (1) and second adjusting bracket (6), and the laser that described laser (8) sends incides on the cleavage surface of first wafer (3) for the treatment of bonding or second wafer (4).
7. the device that utilizes laser alignment wafer crystal orientation according to claim 6 is characterized in that, also comprises an aperture (7) that is placed on the light-emitting window front of laser (8), and the laser that laser (8) sends is through aperture (7).
8. according to claim 6 or the 7 described devices that utilize laser alignment wafer crystal orientation, it is characterized in that described first adjusting bracket (1) and second adjusting bracket (6) are five times regualting frame, can horizontally rotate, vertical rotation, three-dimensional translating.
9. the device that utilizes laser alignment wafer crystal orientation according to claim 6 is characterized in that, described laser (8) is a red light semiconductor laser, or helium neon laser, or all solid state laser.
10. according to claim 6 or the 7 or 9 described devices that utilize laser alignment wafer crystal orientation, it is characterized in that, described first wafer (3) or second wafer (4) are silicon chips, or gallium arsenide film, or the gallium nitride sheet, or the indium phosphide sheet, or silicon epitaxial wafer, can also be the III-V compound semiconductor epitaxial wafer of GaAs or indium phosphide substrate, or the II-VI compound semiconductor epitaxial wafer of gallium nitride substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510063365XA CN100395868C (en) | 2005-04-08 | 2005-04-08 | Method and apparatus for aiming at wafer direction using laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510063365XA CN100395868C (en) | 2005-04-08 | 2005-04-08 | Method and apparatus for aiming at wafer direction using laser |
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| Publication Number | Publication Date |
|---|---|
| CN1845296A true CN1845296A (en) | 2006-10-11 |
| CN100395868C CN100395868C (en) | 2008-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200510063365XA Expired - Fee Related CN100395868C (en) | 2005-04-08 | 2005-04-08 | Method and apparatus for aiming at wafer direction using laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060920A (en) * | 2013-01-05 | 2013-04-24 | 武汉电信器件有限公司 | High-precision and pollution-free semiconductor wafer cleavage method |
| CN104681405A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Acquisition method of electrically matched symmetric circuit |
| CN110600414A (en) * | 2019-08-01 | 2019-12-20 | 中国科学院微电子研究所 | Wafer heterogeneous alignment method and device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4778269A (en) * | 1986-02-08 | 1988-10-18 | Mitsubishi Denki Kabushiki Kaisha | Method for determining crystal orientation |
| JP3309484B2 (en) * | 1992-11-25 | 2002-07-29 | 富士通株式会社 | Crystal orientation detection method and apparatus |
| CN1162899C (en) * | 2001-09-30 | 2004-08-18 | 西安交通大学 | Monocrystalline silicon wafer crystal orientation calibrating method |
| CN1279578C (en) * | 2002-02-25 | 2006-10-11 | 中国科学院福建物质结构研究所 | Laser orientation method for crystal |
| CN2836237Y (en) * | 2005-04-08 | 2006-11-08 | 中国科学院半导体研究所 | Novel crystalline orientation alignment device for bonding |
-
2005
- 2005-04-08 CN CNB200510063365XA patent/CN100395868C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060920A (en) * | 2013-01-05 | 2013-04-24 | 武汉电信器件有限公司 | High-precision and pollution-free semiconductor wafer cleavage method |
| CN104681405A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Acquisition method of electrically matched symmetric circuit |
| CN104681405B (en) * | 2013-11-27 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | The acquisition methods of electrically matched symmetric circuit |
| CN110600414A (en) * | 2019-08-01 | 2019-12-20 | 中国科学院微电子研究所 | Wafer heterogeneous alignment method and device |
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| Publication number | Publication date |
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| CN100395868C (en) | 2008-06-18 |
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Granted publication date: 20080618 |