CN1279578C

CN1279578C - Laser orientation method for crystal

Info

Publication number: CN1279578C
Application number: CN 02104316
Authority: CN
Inventors: 吴喜泉; 吴少凡; 李敢生
Original assignee: Fujian Institute of Research on the Structure of Matter of CAS
Current assignee: Fujian Institute of Research on the Structure of Matter of CAS
Priority date: 2002-02-25
Filing date: 2002-02-25
Publication date: 2006-10-11
Anticipated expiration: 2022-02-25
Also published as: CN1441459A

Abstract

The present invention relates to a laser orientation method for a crystal, which utilizes the constant angle principle of a crystal. The natural crystal face or the cleavage surface of a crystal is irradiated by a laser. The position of a reflecting light spot is observed, and the position of a reflecting light spot of a reference square is consulted; afterwards, the exact direction of the crystal axial direction is judged. The orientation method has the advantages of time saving, crystal material saving, safety, high efficiency, etc., and can check whether the present invention deviates from the required direction before being cut.

Description

A kind of laser orientation method of crystal

Technical field

The present invention relates to the manufacture field of crystalline material.

Background technology

In general, the crystal blank must cut into certain size along a certain specific direction of crystal, through using as device behind polishing, the plated film.Must be directed earlier before the cutting of crystal blank.Traditional orientation method is earlier crystal-cut to be gone out a datum level, carries out orientation with the x-ray then, if error is arranged, then must proofread and correct again.Need one, two day time because 502 peptizations are separated, make crystal need a week at least to cutting into device from coming out of the stove.

Summary of the invention

The objective of the invention is to adopt the laser orientation method to accelerate the directed velocity of crystal blank, and improve the precision of seed crystal centering.Its principle and technical scheme are as follows:

The natural crystal face of crystal and cleavage surface are that the macroscopic view of internal crystal structure embodies.They have a certain degree with the crystal axis direction of crystal all the time.The present invention utilizes the permanent angle principle of crystal just, and utilization laser radiation crystal natural crystal face or its cleavage surface are observed the position of flare, the position of basis of reference square flare, judge then crystal axis to accurate direction.Before orientation, to accurately calculate crystal face and cleavage surface and crystal structure earlier and learn the axial angle that becomes, know after these angles just deducibility shaft to the position.It is gluing on flat glass 2 to connect square 3 usefulness 502 during operation earlier, then flat glass is placed on the rotatable platform (changeing table as microscope) 1 of band scale, and each face is close to the surface that connects square peace glass through the benchmark square of polishing.With He-Ne laser 5 irradiation benchmark squares 4 surfaces, rotate rotation platform again, flare is dropped on reference to the correct position on the wall 6, at this moment with 502 gluing firmly crystal.The cleavage surface of crystal is just in time parallel with the opposite side that connects square like this, and crystal just can be taken away and cut like this.For yttrium vanadate crystal,, just can take out wafer in second day with the device of the method cutting a direction.Become some angles if will cut with a, only need after taking off the benchmark square platform to be turned over this angle, the centering crystal gets final product then.

The present invention compares with traditional directional technology, and its advantage is: (1) saves time.Because save correction, thereby save and repeat dish, save and soak the time that 502 glue come unstuck.Just need 1-2 days and once come unstuck; (2) save crystalline material.Because needn't cut the orientation of making a return journey under the fritter crystal, thus the utilance of raising crystal; (3) safety.Be He-Ne light, rather than x-ray; (4) efficient.After the skilled operation, a few minutes just can be finished the directed dish operation that goes up; (5) also can check whether to have before upward machine cuts and depart from desired direction.

Description of drawings

Fig. 1 is the directed schematic diagram of crystal laser, and the benchmark square is in reflection position, wherein: the 1st, rotatable platform, but vertical direction adjustment height 2 is flat glass; The 3rd, connect square; The 4th, the benchmark square requires each mirror polish; The 5th, He-Ne laser; The 6th, with reference to wall.Fig. 2 is that the crystal blank is in reflection position, the reflection of (100) face, wherein: the 7th, the yttrium vanadate crystal blank.Fig. 3 is a yttrium vanadate crystal requirement device schematic diagram.Fig. 4 is that the crystal blank is in reflection position, the reflection of (011) face, wherein: the 8th, the yttrium vanadate crystal blank.

Embodiment

Now the yttrium vanadate crystal with the growth of a axle is an example, cutting device as shown in Figure 3, and its laser orientation comprises following step:

1. be adhesive on the flat glass 2 connecting square 3 usefulness 502 by Fig. 1, be placed on flat glass on the rotation platform 1 then and cling with plasticine all around, this platform has the range of 30mm at vertical direction, and concrete decides on crystal size;

2. adjust He-Ne LASER Light Source 5 and with reference to wall 6 and rotation platform 1 at same horizontal level, benchmark square 4 is close to the connection square, with He-Ne rayed benchmark square, regulate rotation platform flare is just in time dropped on reference to the correct position on the wall 6, and make mark down;

3. carefully take the benchmark square away, change vanadic acid yttrium embryos, adjust podium level, this moment, platform was not rotatable, make the seed crystal cleavage surface (100) of He-Ne rayed in embryos, move the flare that crystal makes cleavage surface and also just in time drop on the mark position in second step, this moment to be with the 502 gluing crystal of living, just can more than coil and cut;

4. if suspect when dripping 502 glue and moved crystal, can take off the reflection square then with a plurality of squares flat on glass piecing together around reflection He-Ne light before crystal, allow crystal reflection, look at whether two hot spots overlap.When the benchmark square exceeds one section than embryos, also can utilize the lifting of platform to make crystal and the reflection of benchmark square, look at whether hot spot overlaps;

5. be not sufficiently complete owing to (010) surface development, so (011) face of use is determined second a face.Through calculating in advance, the angle that known (010) is become with (011) is 48.6 °, then after the 3rd step, crystal-cut went out (100) face, first rotating disk is turned over after, as shown in Figure 4, with (011) surface reflection laser.This moment is fixed that (010) face is also gone up the dish cutting.

6. can cut out (001) perpendicular to (100) face and (010) face simultaneously is the c direction.

Claims

1. the laser orientation method of a crystal, it is the permanent angle principle of utilizing crystal, utilization laser radiation crystal natural crystal face or its cleavage surface, observe the position of flare, the position of basis of reference square flare, judge then crystal axis to accurate direction, it is characterized in that this orientation method is made up of following steps:

1) be adhesive on the flat glass (2) with 502 connecting square (3), be placed on flat glass on the rotation platform (1) then and cling with plasticine all around, this platform has the range of 30mm at vertical direction, and concrete decides on crystal size;

2) adjust He-Ne light source (5) and with reference to wall (6) and rotation platform (1) at same horizontal level, benchmark square (4) is close to the connection square, with He-Ne rayed benchmark square, regulate rotation platform flare is just in time dropped on reference to the correct position on the wall (6), and make mark down;

3) carefully take the benchmark square away, change vanadic acid yttrium embryos, adjust podium level, this moment, platform was not rotatable, make the seed crystal cleavage surface (100) of He-Ne rayed in embryos, move the flare that crystal makes cleavage surface and also just in time drop on the mark position in second step, this moment to be with the 502 gluing crystal of living, just can more than coil and cut;

4) moved crystal if suspect when dripping 502 glue, can be with a plurality of squares flat on glass piecing together around reflection He-Ne light before crystal, take off the reflection square then, allow crystal reflection, look at whether two hot spots overlap, when the benchmark square exceeds one section than embryos, also can utilize the lifting of platform to make crystal and the reflection of benchmark square, look at whether hot spot overlaps;

5) be not sufficiently complete owing to (010) surface development, so (011) face of use is determined second a face, the angle that known (010) is become with (011) is 48.6 °, then after the 3rd step, crystal-cut went out (100) face, after earlier rotating disk being turned over, with (011) surface reflection laser, this moment is fixed that (010) face is also gone up the dish cutting;

6) can cut out (001) perpendicular to (100) face and (010) face simultaneously is the c direction.