CN1448786A - A few light shield installable light shield support and micro-image exposure system - Google Patents
A few light shield installable light shield support and micro-image exposure system Download PDFInfo
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- CN1448786A CN1448786A CN 02106111 CN02106111A CN1448786A CN 1448786 A CN1448786 A CN 1448786A CN 02106111 CN02106111 CN 02106111 CN 02106111 A CN02106111 A CN 02106111A CN 1448786 A CN1448786 A CN 1448786A
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Abstract
The optical mask support has several windows for several optical masks to be installed so as to perform microphotograph and define the exposure combining area combined by these optical masks on wafer. Each optical mask has trimmer on its side edge for the position and angle regulation while installing optical mask in the window to make the optical masks parallel completely. When the microphotographic system is used, the support with several optical masks may be shifted to locate the optical mask to be used in exposure under the exposure light source. The microphotographic exposure process will form pattern by the combination of the optical masks on the surface of wafer.
Description
Technical field
The present invention is relevant with a kind of light shield support (M) that is used for installing light shield (R) in micro-photographing process, the particularly a kind of light shield support that can install several piece light shield (MU) simultaneously, and utilize this kind light shield support to carry out little shadow exposure system of little shadow exposure.
Background technology
Along with the progress that semi-conductor industry continues, little shadow resolution and optics control ability be significantly lifting all, makes the exploitation and the design of ultra-large type integrated circuit (ULSI), and be lasting to littler live width challenge.And various size of component is also reduced to below the inferior micron, with the density of further raising integrated circuit.Yet in order effectively to increase the circuit quantity on each piece wafer (), to improve the circuit integration, often needing to enlarge the exposure area size () of carrying out micro-photographing process could effectively achieve the goal.For example, with 0.35 micron live width process technique, when making the DRAM memory body with 64Megabit, its chip area is approximately 10 millimeters * 20 millimeters, and habitual exposure area is about 22 millimeters * 22 millimeters.But when the process technique of using 0.18 micron live width, when making the DRAM memory body with 1Gigabit, chip area can increase to 15 millimeters * 30 millimeter, obviously needs the bigger exposure area of fit dimension.
Please refer to Fig. 1, this figure has shown that tradition is used for carrying out the stepping-repetition microlithography system () of little shadow program.Wherein, exposure light source 12 can be incident in the optical projection system (projectionimage system) 18 by behind diaphragm 14 and the light shield 16, and wafer 22 surfaces above platform 20 reassociate in the position, and in exposure area 24, define with light shield 16 on the identical and pattern that dwindles.After for the first time exposure was finished, platform 20 can move along the direction of arrow 26, and makes wafer 22 produce displacements, so that in 24 adjacent side position, the exposure area first time, carry out secondary exposure program.Then, through the above-mentioned steps of carrying out of repetitiousness, can be on wafer 22 progressively define required pattern.It should be noted that because whole exposure area 24 is to finish irradiation in the single exposure program, therefore in optical projection system 18, need the bigger lens of installing, so that the pattern of complete transmission light shield 16.
Please refer to Fig. 2, wherein when the exposure area 30 that will define has about 25 millimeters * 33 millimeters area, the diameter of lens 35 often increases to about 44 millimeters, so that can contain whole exposure area 30 completely, in other words, in order to increase the area of exposure area, meet the requirement of high density integrated circuit, in traditional stepping-repetition microlithography system, the size that often will increase lens relatively reaches the effect of demand.But along with the increasing of lens sizes, when define pattern, cause the image of exposure easily, produce distortion, distortion, with problem such as aberration.And,, therefore when wafer has the great surface of ladder difference, the adjustment of the depth of focus is become more because of difficulty because whole exposure area is to finish irradiation in single exposure.
In order to overcome the problem of stepping-repetition microlithography system 10, in present manufacture of semiconductor, adopt the micro-photographing process that stepping-scanning microlithography system 40 is correlated with as shown in Figure 3 often.Wherein, exposure light source 42 can shine on grating 44, and via the slit on the grating 44 46, the light beam transmission light shield 48 with the strip block passes through the focussing force of optical projection system 50 again, so that define corresponding epitome pattern 52 in wafer 54 surfaces.Then, be used for installing the light shield support 56 of light shield 48, can move along the direction of scanning of arrow 58, the platform 60 that is used for carrying wafer 54 simultaneously also can move along the direction of arrow 62, carry out exposure program next time again, so that through the exposure actions of carrying out in regular turn, gradually define exposure area on the wafer 54.In other words, the use stepping-when scanning microlithography system 40 carries out exposure program, it is not the irradiation of in exposure program once, just finishing whole exposure area, but whole exposure area is divided into the zone of several strips, with linear light source light shield 48 is scanned successively again, and define the pattern of whole exposure area piecemeal.
Thus, owing in the exposure program each time, pass the linear light source of slit 46, only can shine the part strip region on light shield 48, and, on the surface of wafer 54, define the part pattern of strip via optical projection system 50.Be with, when the area of exposure area increased, the lens in the optical projection system 50 can't face the problem of above-mentioned stepping-repetition microlithography system 10.With reference to shown in Figure 4, wherein amass (25 millimeters * 33 millimeters) when identical when the area of whole exposure area 70 with example among Fig. 2, employed lens 75 only need have about 26 millimeters diameter, just can effectively carry out required micro-photographing process.At this moment, see through the exposure actions that slit 46 carries out, can produce slit exposure zone 76 via lens 75.Then, after light shield 48 and wafer 54 produces relative moving, can carry out exposure program again, and along arrow 78 directions, 70 definition of whole exposure area are come out single-frame.
In other words, nationality and is utilized stepping-scanning microlithography system 40, defines the pattern of whole exposure area in the mode of cutting apart, and can solve tradition really and utilize the restriction that stepping-repetition microlithography system 10 suffered exposure areas enlarge.But specify, because at present typical light shield often is designed to 6 inches (about 152 millimeters) square specifications.Therefore, although use stepping-scanning microlithography system, but satisfy the demand that the exposure area area increases, but be subjected to the restriction of light shield specification, also make that the size of present exposure area is still limited to.
Particularly, in present manufacture of semiconductor,, eliminate all devices and the framework of changing light shield manufacture possibly fully, except the consumption that increases funds, also may make whole processing procedure become complicated more if will change the design of light shield specification.Wherein, in order to increase the exposure area area, and make light shield, not only be easy to generate more defective, and absolute dimension (CD) also can be more inhomogeneous with large-size.And, owing in the light shield of large-size, can hold more pattern, be with contingent site error between these patterns (larger placement errors), also may cause the exposing patterns yield on the low side.
Person more, no matter be above-mentioned stepping-repetition microlithography system or stepping-scanning microlithography system, it all carries out exposure actions at single light shield, and has significantly increased the time of whole micro-photographing process.For example, when needs carry out multiple-exposure (mulhple exposures), can earlier first light shield be installed on the light shield frame, after the location finishes, just carry out exposure program.Then, after the first light shield exposure actions is finished, just first light shield is taken off, install second light shield simultaneously, and, carry out the exposure of repetition the same position of wafer.
But thus, when changing the light shield of elder generation, back use, or the finder that behind the installing light shield, is carried out, all can consume the meaningless time, and reduce the output of overall throughput.In addition, except above-mentioned repeated exposure program need be changed light shield,, also need constantly to change light shield to carry out required little shadow program when the pattern on the whole wafer is when being made of several light shields.Be with, how to reduce spent when changing light shield the time ask, to improve the wafer production capacity of whole micro-photographing process, just become very important problem at present.
Summary of the invention
Fundamental purpose of the present invention is providing a kind of light shield support of installing the several piece light shield, can install a plurality of light shields simultaneously thereon, and nationality below exposure light source, move this and can install the light shield support of several piece light shield, and mobile simultaneously wafer position, can define different mask pattern in crystalline substance figure surface with in little shadow exposure program once.
Another object of the present invention is to put forward a kind of little shadow exposure system that includes the light shield support that to install the several piece light shield, can on wafer, define the pattern of light shield.
The invention provides a kind of light shield support of installing the several piece light shield, have a plurality of windows on it, can be used to install a plurality of light shields, to carry out little shadow exposure program.On the side of each light shield, and have micromatic setting, can when the installing light shield be in window, adjust the position and the angle of light shield, and make a plurality of light shields parallel completely to each other.Thus, when using little shadow exposure system, the removable light shield support of installing the several piece light shield, the light shield that will expose moves to the exposure light source below, carrying out little shadow exposure program, and, form pattern by these light shield combination in any at crystal column surface.
In preferred embodiment, but nationality the exposure light source of little shadow exposure system, makes and carries out the required parallel beam of little shadow program, and make this exposing light beam illuminating on the light shield support that can install the several piece light shield.And this light shield support that can install the several piece light shield can move in the plane, place, and makes different light shields one by one by under the exposure light source, with the pattern that defines these light shields in regular turn on crystalline substance figure surface.This can install the position and the displacement of the light shield support of several piece light shield for accurate adjustment, can use the laser interferometer to measure.Thus, penetrate the exposing light beam of the light shield support that can install the several piece light shield, after the lens combination below the process, little movie queen's exposing light beam can be projeced on this crystal column surface, and define corresponding pattern.Simultaneously, be used for carrying the platform of wafer through control, can make its corresponding to this can install the several piece light shield the light shield support the position and move so that the pattern of a plurality of different light shields can be defined in position corresponding on this wafer successively.
The present invention also provides a kind of little shadow exposure system, can define the pattern of light shield on wafer, and this little shadow exposure system comprises at least: exposure light source can produce and carry out the required parallel beam of little shadow program; Can install the light shield support of several piece light shield, have a plurality of windows, in order to install a plurality of light shields, wherein on the side of this light shield, have micromatic setting, can when this light shield of installing is in this window, adjust the position and the angle of this light shield, and make these a plurality of light shields parallel completely to each other, and this light shield support can move in the plane, place, and makes this different light shields one by one by under this exposure light source, with the pattern that defines this light shield in regular turn on this crystal column surface; The laser interferometer is in order to measure position and the displacement that this can install the light shield support of several piece light shield, so that the operator can accurately control moving of this light shield support that can install the several piece light shield; Optical projection system is positioned at this light shield support that can install several piece light shield below, and in order to transmitting and to dwindle exposing light beam through this light shield, and the exposing light beam after will dwindling is projeced on this crystal column surface, and defines corresponding pattern; And platform, in order to carrying this wafer, can corresponding to this can install the several piece light shield the light shield support the position and move so that make the pattern of these a plurality of light shields, little shadow is exposed to the position of correspondence on this wafer.
Use light shield support and the little shadow exposure system of installing the several piece light shield of the present invention, have considerable advantage.At first, because this light shield support that can install the several piece light shield can be installed several light shields simultaneously, be with after finishing in initial fine setting, just can make all light shields present completely parallel arrangement and also be fixed.Thus, follow-up when carrying out the scan exposure program, no matter brilliant the required pattern in figure surface why, all can see through corresponding light shield on the light shield support that can install the several piece light shield, carry out required scan exposure program, and the time that need not expend a large amount of replacing light shields or position.And, nationality the positioning mirror on the light shield support that can install the several piece light shield, the light shield support displacement and the position that the laser interferometer will be measured accurately can install the several piece light shield, thus can move corresponding light shield and carry out the scan exposure action along with the pattern demand on the wafer.Thus, can significantly promote wafer production capacity in the micro-photographing process.
Under comparing, when tradition uses single light shield to carry out the scan exposure program, tend at whole batch wafer after all scan exposure is finished, again the light shield support is shifted out and changes next piece light shield, then again will batch in first wafer be fixed on the platform with vacuum suction (chucking), and carry out the pattern definition of this piece light shield.Obviously, use this kind method to define pattern on the wafer,, all need absorption wafer again, and it is positioned action when changing light shield each, Lei Ji error has tended to reduce the yield of whole micro-photographing process therebetween.But when utilizing the light shield support of installing the several piece light shield of the present invention, because can be along with the demand of pattern, at any time crystal column surface is carried out required little shadow exposure program, be with can all define at the pattern of monoblock crystal column surface finish after, change next piece wafer again.So, the monoblock wafer from first to last only need once adsorb the action of location, and can reduce to the issuable error of this part minimum.
In addition, as above-mentioned,, be that the width W of its window interval can further be dwindled with when making can be installed the light shield support of several piece light shield owing to can move the position of light shield in window.So can make the exposure area on the wafer produce the effect of expansion, fill the purpose that part is utilized the crystal column surface space and reach.Or, the wafer translational speed in the time of also can crossing window interval through adjustment strip light source scanning, and the interval in the exposure area is partly dwindled significantly, even make the defined exposure area of different light shields, can on wafer, directly link together.
Description of drawings
Fig. 1 is the structural section figure of little shadow exposure system, shows according to conventional art to use single light shield support to carry out stepping-the repeat situation of little shadow exposure;
Fig. 2 is the vertical view of projection lens, during the little shadow exposure system of display application stepping-repeat, and exposure area and projection lens proportionate relationship to each other;
Fig. 3 is the structural section figure of little shadow exposure system, shows according to conventional art to use single light shield support to carry out the situation of the little shadow exposure of stepping-scanning;
Fig. 4 is the vertical view of projection lens, during the little shadow exposure system of display application stepping-scanning, and exposure area and projection lens proportionate relationship to each other;
Fig. 5 is the vertical view that can install the light shield support of several piece light shield, shows according to the light shield support of installing a plurality of light shields provided by the present invention;
Fig. 6 is the structural section figure of little shadow exposure system, shows according to the technology of the present invention to use the light shield support that can install the several piece light shield to carry out the situation of the little shadow exposure of stepping-scanning;
Fig. 7 be for installing the vertical view of light shield support of several piece light shield, shows the light shield backing positions that utilizes the laser interferometer to measure can to install the several piece light shield and the situation of displacement;
Fig. 8 is the wafer vertical view, shows to use the light shield support that can install the several piece light shield, with in the scan exposure program once, defines the exposure calmodulin binding domain CaM of being made up of several mask pattern and schemes lip-deep situation in crystalline substance;
Fig. 9 is the wafer vertical view, shows to use the light shield support that can install the several piece light shield, the situation of exposure calmodulin binding domain CaM on crystal column surface that definition is made up of several mask pattern;
Figure 10 is the light shield vertical view, the area relationship between reading scan zone and single light shield;
Figure 11 is double light shield support vertical view, is presented at the situation of installing light shield on the double light shield support;
Figure 12 is triple light shield support vertical views, is presented at the configuration scenario when installing light shield on triple light shield supports;
Figure 13 is the wafer vertical view, when being presented at use and can installing the light shield support of several piece light shield and carry out the scan exposure program, use shade to cover partly mask pattern, and in same exposure area, its relevant situation of exposure calmodulin binding domain CaM that definition is made up of several mask pattern;
Figure 14 is the wafer vertical view, when being presented at use and can installing the light shield support of several piece light shield and carry out the scan exposure program, to the same exposure area of crystal column surface, carries out the situation of double exposure program.
Embodiment
The invention provides a kind of light shield support of installing the several piece light shield.This light shield support that can install the several piece light shield has a plurality of windows, can install a plurality of light shields simultaneously thereon, carrying out little shadow exposure program, and on wafer definition by exposing patterns that these light shields were combined into.Wherein, on the side of each light shield, have micromatic setting, can when the installing light shield be in window, adjust the position and the angle of light shield, and make a plurality of light shields parallel completely to each other.And, on the corner of the light shield support that can install the several piece light shield, then installed positioning mirror, so that can control position and displacement that this can install the light shield support of several piece light shield through the measurement of laser interferometer.So, when using little shadow exposure system, but nationality the mobile light shield support of installing the several piece light shield, and the light shield that will expose moves to the exposure light source below, carries out little shadow exposure program, and at crystal column surface, forms the pattern that is combined into by these light shields.Relevant of the present invention be described in detail as follows described.
Please refer to Fig. 5, wherein shown provided by the present inventionly, can install the light shield support (multiPle-reticle holder) 100 of the several piece the installed light shield of several piece light shield.This can install on the light shield support 100 of several piece light shield, has a plurality of windows, can install the light shield that will expose.With light shield support 100 is example, because it has six windows, is can install six light shields (light shield 1 is to light shield 6) simultaneously.And, for each light shield, have corresponding micromatic setting (manipulator) 102 on its side, can after light shield is installed up on the light shield support 100 that can install the several piece light shield, the position of light shield be finely tuned.Generally speaking, after light shield is installed up to corresponding window, can be through control micromatic setting 102, make light shield on the plane of the light shield support 100 that can install the several piece light shield, move along X-axis or y axle, or carry out slightly rotation, and be adjusted to suitable position or angle along the θ angle.That is, through control micromatic setting 102, can make the light shield in the window adjust to suitable position.Thus, but nationality the micromatic setting 102 of handling light shield 1 to 6, and makes all light shields with completely parallel mode marshalling.
Specify that although for each light shield, it all has the degree of freedom that moves along X-axis, y axle or θ angle.But in actual applications, each light shield may not all need to carry out the adjustment of above-mentioned three degree of freedom.With the light shield support that can install two light shields is example, and one of them light shield only needs the mobile adjustment along the θ angle, and another light shield then carries out the fine setting of three degree of freedom simultaneously, just can make two light shields reach sufficient parallel effect.
In addition, for each light shield, micromatic setting 102 its quantity that are installed on the side are neither to the greatest extent identical with the position.With the light shield among Fig. 56 is example, because it is arranged in the edge of whole group light shield (1 to 6), is with on its three sides 104, all can be used to install micromatic setting 102.In general, only need to select any one side 104 to install little silk fabric device 102, just can make light shield 6 carry out the fine setting of three degree of freedom.Certainly, consider down, also can all install micromatic setting 102 simultaneously at two sides or three sides of light shield 6 at processing procedure needs or other.As for, for being positioned at the light shield 5 of whole group light shield (1 to 6) middle part,,, and be not suitable for being used for installing micromatic setting respectively with light shield 4 and light shield 6 adjacency because it is along axial two sides of y.Be with only can light shield 5 along the direction of scanning upper and lower two sides 106 of (X-axis), installing micromatic setting 102.
So, after six light shields (1 to 6) all are installed on the light shield support 100 that can install the several piece light shield, just can use stepping-scanning microlithography system to carry out exposure program.Please refer to Fig. 6, wherein exposure light source 142 can form the light source of strip behind the slit 146 that passes through on the grating 144, shines on the light shield support 100 that can install the several piece light shield.After this strip light source scanning is crossed part light shield 1, can via optical projection system 150, be passed in the exposure area 152 corresponding on the wafer 154 shining the part pattern of light.Then, same as described above, this light shield support 100 that can install the several piece light shield can move a spacing again along the direction of scanning of X-axis behind exposure program each time, the wafer 154 that is carried by platform 160 simultaneously also can move a segment distance towards the direction of correspondence, so that carry out exposure program next time.So just can be one by one with scan mode, the pattern of light shield 1 all is transferred to wafer 154 surfaces.
Pattern at light shield 1 has scanned fully, and after its pattern had been defined in wafer 154 surfaces, the light shield support 100 that can install the several piece light shield can continue to move along the direction of X-axis again, and then light shield 2 is carried out the scan exposure program.Or when whole micro-photographing process has other demand or considers, then the may command light shield support 1000 that can install the several piece light shield moves along the direction of X-axis and y axle, so that will desire to carry out the next light shield of exposure program, moves to the below of slit 146.For example, behind the pattern that has scanned light shield 1, if what and then will scan is light shield 6, the light shield support 100 that then can install the several piece light shield can move along X-axis and y axle, and make light shield 6 be positioned at slit 146 under so that it is carried out the scan exposure program.Wherein, in order to move when can install the light shield support 100 of several piece light shield, can control its distance that moves and position accurately, can laser is dried penetrates the position that instrument (laserl nterferometer) measures relevant distance and adjusts the light shield support 100 can install the several piece light shield through utilizing.
Please refer to Fig. 7,,, can produce transmitted light and reflected light respectively through after the lens 112 by the emitted light beam of laser 110.Wherein transmitted light is after exposing to reference mirror 114, can produce reflection and makes beam reversing lens 112, and be gathered on the inductor 116.Simultaneously, by the reflected light that lens 112 produce, can shine the positioning mirror 118 on multiple mask frame 100 corners and produce reflection, the light beam after this reflection can be gathered on the inductor 116 equally through behind the lens 112.So, can be through analyzing by the different wave shape of reference mirror 114 with positioning mirror 118 twice folded light beams, and judge the distance that this light shield support 100 that can install the several piece light shield moves along X-axis or y axle.
In general, the light beam that is produced when laser 110, as shown in FIG., when exposing to the positioning mirror 118 of light shield support 100 on the X-axis side that to install the several piece light shield, can be used to measure the distance that this light shield support 100 that can install the several piece light shield moves along the y axle.Same, nationality setting up of another lens combination (not shown), and another inductor is detected by positioning mirror 120 folded light beam that produces on light shield support 100 another sides (along the y direction of principal axis) that can install the several piece light shield.So, can measure the distance that the light shield support 100 that can install the several piece light shield moves along X-axis.Because for installing the light shield support 100 of several piece light shield, it moves along X-axis or y axle, the operator all can effectively and accurately grasp.Therefore, when the micro-photographing process of being correlated with, but nationality moving of light shield support 100 that control can install the several piece light shield, and make the light shield of desiring to carry out exposure program, move to the below of slit 146.
Particularly point out since at the installing light shield to can install on the light shield support 100 of several piece light shield the time, nationality micromatic setting 102, each light shield is in alignment with each other and keeps parallel relation.Be with actual when carrying out exposure program, when first light shield exposure scanning is finished, and then will expose scanning the time, do not need again first light shield to be carried out the action of contraposition (align) second light shield.In other words, installing light shield in the time can installing the light shield support 100 of several piece light shield, owing to each light shield each other all complete matching present parallel fully, be to need only before the scan exposure that carries out first light shield, carry out bit motion at first light shield, promptly can be considered the contraposition (pre-align) of having finished each light shield simultaneously.Therefore, only need nationality the dried instrument of penetrating of laser and move the light shield support 100 that can install the several piece light shield, the light shield that the next one will be exposed, move on to slit 146 under, just the scanning sequence that can directly expose, and do not need to carry out bit motion at this light shield again.
Thus, in the present invention, change the spent time of light shield of desiring to carry out scan exposure,, make next light shield be positioned at the time that strip light source below is spent in fact only for moving the light shield support 100 that to install the several piece light shield.Under comparing, traditional stepping-scan exposure program need be shifted out the overall optical cover stent, take out the light shield that has exposed and finished then, refill and establish the light shield that the next one will carry out scan exposure, and the light shield support is moved into, and position program again, and finish the preparation before the scan exposure.Significantly elongated therebetween the time of whole micro-photographing process, and reduce the output of overall throughput.And, to carry out the light shield of scan exposure to each, owing to need carry out the one-time positioning action again, therefore be easy to cause extra bit errors, and reduced the yield of whole micro-photographing process.
Generally speaking, when utilizing the light shield support 100 of installing the several piece light shield of the present invention to carry out scan exposure, can (X-axis) scan in regular turn along the direction of scanning, and on wafer 154, produce bigger exposure calmodulin binding domain CaM (composite field) the light shield of several adjacency.Or be that nationality single light shield is carried out scan exposure, and on wafer 154, form corresponding exposure area.Please refer to Fig. 8, wherein when utilizing the light shield support 100 that to install the several piece light shield to carry out exposure actions, can carry out the action of scan exposure in regular turn along the direction of scanning to light shield 1, light shield 2 and light shield 3.Because the exposure of these light shields order, just in time the direction that moves with the light shield support 100 that can install the several piece light shield is consistent, be not need the extra light shield support 100 that to install the several piece light shield that moves, switch the light shield that carries out scan exposure, and can after light shield 1 scan exposure is finished, then carry out the scan exposure of light shield 2.Same, after the scan exposure of light shield 2 is finished, carry out the scan exposure of light shield 3 on the way.So, can directly on wafer 154, define the exposure calmodulin binding domain CaM that comprises light shield 1, light shield 2 and light shield 3 patterns.
Be with, as manifesting among Fig. 8, nationality and is scanned light shield 1,2,3 in regular turn, can be with in the scan exposure program once, along the surface of wafer 154, define the exposure calmodulin binding domain CaM that has comprised light shield 1, light shield 2 and light shield 3 patterns in regular turn.Wherein, and to traverse the arrow of exposure area 1,2,3, represent that these three zones are being defined with in stepping-scan exposure program once.In general, combine the scan exposure of light shield 1 to 3, do not limit and will go from first row or first on the wafer 154, and can be along with the needs of processing procedure, carry out any position from wafer 154.In this figure, shown by the side of wafer 154, defined the situation of exposure calmodulin binding domain CaM towards the right one by one.As for, for second to seven row on the wafer 154, with the part zone of the 7th to eight row, then owing to can't hold exposure area in conjunction with three light shields, be with only at light shield 1,2, carry out the scan exposure program, and produce the exposure combination that comprises zone 1,2.
Please refer to Fig. 9, this figure shows along with processing procedure is required, six light shields is made up the scan mode that is produced, with relevant stepping-scan pattern.Wherein, according to defined exposure calmodulin binding domain CaM on wafer 154, can divide in conjunction with light shield 1,2,3 stepping of being carried out-scan exposure programs, and in conjunction with light shield 4,5 exposure programs that carry out stepping-scanning, the exposure program that uses light shield 6 to carry out stepping-scanning alone in addition in addition.And,,, have quick switching light shield to carry out the ability of scan exposure owing to use the light shield support 100 can install the several piece light shield to carry out scan exposure program in conjunction with several light shields as above-mentioned.Therefore, even if above-mentioned three kinds of different exposure areas, distribute irregular, but after utilizing the light shield support 100 of installing the several piece light shield of the present invention, still can be fast on wafer 154, in the corresponding position, define required pattern.
Generally speaking, when using stepping-scanning microlithography system to come that light shield carried out scan exposure, if the distance of crossing via the strip light source scanning of slit is 9 inches, and when the strip light source (slot) of slit had 6 inches length, whole scanning area (scan field) can have 9 inches * 6 inches area.If above-mentioned scanning area is to use single light shield to carry out, this light shield often will be done greatlyyer than the scanning converse domain.Please refer to Figure 10, if wherein in fact during 200 9 inches * 5 inches of scanning areas, the light shield 202 of made need be bigger than physical scan area 200, so that when installing light shield 202 is on the light shield support, provide the borderline region of bordering on support.Therefore the area of whole light shield 202 is approximately (9-a) inch * (6-a) about inch, and wherein the part of width a is used to provide as borderline region and uses.When light shield 202 is installed on the light shield support in symmetrically mode, can be as shown in FIG., each side of light shield 202, the border of the 1/2a that all has an appointment partly borders on the light shield support.In other words, parameter a herein promptly represents the overall width in zone, light shield coboundary.Under general situation, the borderline region (1/2a) of light shield 202 each side is about 5 millimeter among the figure, is that (width a) to consider being approximately 10 millimeters by total borderline region of whole light shield 202 on x axle or y axle.
Please refer to Figure 11, wherein shown the light shield support of the several piece the installed light shield that can install two light shields, the scope of its scanning area (scan field) when carrying out stepping-scan exposure program.As above-mentioned, on double light shield support (double-retlcle holder) 210, can form two windows and be used for carrying, installing the light shield 1,2 of desiring to carry out scan exposure.Wherein, because light shield 1 has the border that above-mentioned width is about a respectively with light shield 2, so that border on light shield support 210.Therefore, concerning light shield 1,2, the size of its reality can be as dotted line square among the figure.When light shield 1 and light shield 2 with respect to window, when install than symmetrical manner, for each light shield, the border of its each side part probably can have the width of 1/2a.In other words, concerning being positioned at two spacer support frames between window, the big appointment of its width W equates with a, so that enough spaces are provided, partly utilizes for the border of light shield 1 and 2.Thus, when the specification of each light shield is approximately 6 inches * 6 inches, stepping-when scanning microlithography system carried out the action of scan exposure, its physical scan area had comprised two windows and window interval using, and was to be approximately about (6-a) inch * (12-a) inch.
Certainly, in order to reduce the window interval distance W, we can try one's best with the side skew to the left and right of two light shields.For example light shield 1 can move towards the position on the left side, and light shield 2 then moves towards the position on the right, and two light shields can occupy less space at the borderline region of support central part thus, and spacing distance W can effectively be dwindled.In preferred embodiment, this spacer of may command from W between the 0.1mm to 5mm.But what particularly point out is when design can be installed its window interval of light shield support of several piece light shield, to still need and consider when light shield is finely tuned in window, the rotation space that may need.
Referring again to Figure 12, wherein show to use triple light shield supports (triPle-reticle holder) 220, when carrying out stepping-scan exposure program, the scope of its physical scan area.As above-mentioned, can be with moving that light shield 1 is tried one's best to the right, and with moving to the left side that light shield 3 is tried one's best.So, for light shield 1, the borderline region in its left side is approximately a, and the borderline region on right side then approaches 0.Same, for light shield 3, the borderline region on its right side is approximately a, and the borderline region in left side then approaches 0.In other words, contraposition is at the light shield 2 of central authorities, and the window interval of its right and left all can offer the borderline region utilization of light shield 2.Be with, this moment the window interval distance W be approximately about 1/2a, can simultaneously three light shields (1 to 3) be installed on the support.In the case, when the specification of each light shield is 6 inches * 6 inches, its actual scanning area comprised three light shield areas that window exposed to the open air and has been positioned at three window intervals between window, is to be approximately (6-a) inch * (18-2a) about inch.
Because the light shield support of installing the several piece light shield provided by the present invention has the ability of quick location, even be very many with the light shield quantity that need expose, and the mode of arranged in patterns complexity very on crystal column surface, but still can finish required little shadow exposure manufacture process rapidly through using the light shield support that to install the several piece light shield.Please refer to Figure 13, wherein working as processing procedure need be on wafer 154 surface, when defining the pattern of six different light shields in the mode of irregular, can put six light shields simultaneously thereon owing to can install the light shield support of several piece light shield, therefore compared to the exposure manufacture process of the single light shield of tradition, utilize device and method of the present invention, will need be behind the intact light shield of scan exposure, the light shield support is shifted out, change the light shield that another will scan.In other words, even when whole batch wafer, when all having the distribution of different pattern, but also nationality the quick station-keeping ability of the light shield support that can install the several piece light shield, and at the pattern demand of each wafer, the scan exposure of being correlated with action.
In addition, when processing procedure needs, but also nationality the mode of using shade to stop the part light shield, and in the same exposure area on wafer 154, define the part pattern of several different light shields, and nationality these partly patterns form whole pattern in this exposure area.Exposure area as the third line secondary series among the figure, cover (masked off) light shield partly through the utilization shade, can define one by one light shield 1 partly, light shield 2, with the part pattern of light shield 4, and in same exposure area, be combined into required exposing patterns, wherein the upper left corner of this exposure area has partly defined the part pattern of light shield 4, the part zone in the upper right corner has then defined the part pattern of light shield 2, zone, the lower left corner has then defined the part pattern of light shield 1, does not partly then define any pattern as for the lower right corner in scanning motion.
In addition, when carrying out stepping-scanning sequence in conjunction with different light shields, then can produce the 4th row, the 3rd exposure calmodulin binding domain CaM among the figure to the five-element.This piece exposure calmodulin binding domain CaM is to be combined by the part scanning area of light shield 1 to 3 and the part scanning area of light shield 4 to 6.Wherein, can use twice scan exposure program define among the figure the exposure land or, primary scan exposure program is inswept successively light shield 1,2 and 3, and under the situation of using shade to cover, form by part light shield 1,2 and 3 patterns that constituted at the first half of whole exposure calmodulin binding domain CaM.Then, carry out secondary scan exposure program, with inswept light shield 4,5 and 6 one by one, and under the situation of using the Liao Dynasty's cover to cover, form by part light shield 4,5 and 6 patterns that constituted in the Lower Half of exposure calmodulin binding domain CaM.
Please refer to Figure 14, this figure has then shown and utilizes the light shield support that can install the several piece light shield to carry out the situation of double exposure (double exposure).Wherein, light shield 1 and 2, light shield 3 and 4 and light shield 5 and 6 is combined respectively carries out dual scan exposure action.With the double exposure in conjunction with light shield 1 and 2 is example, can scan light shield 1 earlier and in selected exposure area, define the pattern of light shield 1, nationality the quick positioning function of the light shield support that can install the several piece light shield then, scanning light shield 2 and carry out secondary scan exposure in same exposure area.In like manner, through using this mode, the double exposure zone that on wafer 154, defines light shield 3 and 4 that can be one by one, and in conjunction with the double exposure zone of light shield 5 and 6.Certainly, when processing procedure needs, then can use three different light shields, come to carry out triple exposure programs at the same exposure area on the wafer 154.Or use how different light shields, in same exposure area, carry out the action of multiple-exposure.
In addition, what specify is, as above-mentioned, owing to the part of its window interval of light shield support (the about W of width) that can install the several piece light shield is also light tight, be with reference Fig. 6, in the program of carrying out scan exposure, the part of support window interval 101 can produce unexposed interval region on wafer.As shown among Fig. 8, although light shield 1 to 3 is in same scan exposure program once, in the exposure area of the pattern of three light shields of definition one by one correspondence on wafer 154.But in this exposure area, still can find out the interval region that is caused by the support window interval.
Desire the width of interval region on the further reduction wafer 154 or fully with its elimination, can be when stepping-scanning system scan light shield 1, the translational speed of reduction wafer 154, or even stop the mobile of wafer 154 earlier.By the time stepping-scanning system, scanned light shield 1 and light shield 2 between the support window interval after, make wafer 154 recover original translational speed again.At this moment, can then scan the pattern of light shield 2, and make exposure area 1 and exposure area 2 on the wafer 154 between interval region, significantly reduce width, even can allow exposure area 1 directly link to each other with exposure area 2.
Though the present invention illustrates as above with a preferred embodiments, so it is not in order to limit the present invention's spirit and invention entity, only to terminate in this embodiment that.For example, though be to use the associative operation of stepping-scanning microlithography system in the present invention, the design and relevant processing procedure of the light shield support that can install the several piece light shield are described.But concerning being familiar with this field skill person, can install the application of the light shield support of several piece light shield, also can expand in the associative operation of stepping-repetition microlithography system when understanding this kind easily.Wherein, because stepping-repeat little shadow exposure, be in the exposure once, with the pattern of monoblock light shield, be defined in the exposure area on the crystal column surface.Therefore, when using the light shield support of installing the several piece light shield of the present invention, equally can be after first light shield exposure be finished, positioning action by the laser interferometer, control can be installed the moving of light shield support of several piece light shield, and the light shield that makes next piece desire to expose, move to exposure light source under.Then, just can carry out little shadow exposure program to second light shield.Simultaneously, nationality moving of control platform, can allow wafer produce relative displacement.So, the pattern of second light shield just can be defined in the zone corresponding on the wafer as required.Clearly, utilizing the light shield support to install the several piece light shield in stepping-when repeating in little shadow exposure system, also can reach above-mentioned every facility and advantage.Be with, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in the application's the claim scope.
Claims (18)
1, a kind of light shield support of installing the several piece light shield, have a plurality of windows, in order to install a plurality of light shields, so that carry out little shadow exposure program, can on wafer, define, wherein on the side of each this light shield, have micromatic setting by the exposing patterns that this a plurality of light shield made up, can be when this light shield of installing be in this window, adjust the position and the angle of this light shield, and make these a plurality of light shields parallel completely to each other.
2, the light shield support of installing the several piece light shield as claimed in claim 1, it is characterized in that: above-mentioned light shield support, can be applicable to stepping-scanning microlithography system, and in same scan exposure program once, scan a plurality of these light shields in regular turn, and define the exposure calmodulin binding domain CaM of forming by this a plurality of this mask pattern at this crystal column surface.
3, the light shield support of installing the several piece light shield as claimed in claim 1, it is characterized in that: above-mentioned light shield support can move on the plane at this a plurality of light shields place, and make this different light shields below by exposure light source one by one, and with the design transfer of this light shield to this crystal column surface.
4, the light shield support of installing the several piece light shield as claimed in claim 3, it is characterized in that: on the corner of above-mentioned light shield support, have at least one positioning mirror, can reflect the thunder laser beam of laser interferometer, and measure distance and the position that this multiple mask moves accurately.
5, the light shield support of installing the several piece light shield as claimed in claim 4, it is characterized in that: above-mentioned light shield support is on left and right two corners of the side of X-axis, can install first positioning mirror respectively, so that this light shield support is along the y axle when mobile, the laser interferometer can be by the folded light beam of this first positioning mirror, and measures the displacement and the position of this multiple mask.
6, the light shield support of installing the several piece light shield as claimed in claim 5, it is characterized in that: at above-mentioned light shield support along the side of y axle on upper and lower two corners, can install second positioning mirror respectively, so that this light shield support is when X-axis moves, the laser interferometer can be by the folded light beam of this second positioning mirror, and measures the displacement and the position of this multiple mask.
7, the light shield support of installing the several piece light shield as claimed in claim 3, it is characterized in that: above-mentioned light shield support can move along the direction of scanning of stepping-scanning microlithography system, and make this different light shields one by one pass through this exposure light source below, so that, define this different mask pattern in regular turn on this crystal column surface with in stepping-scanning sequence once.
8, the light shield support of installing the several piece light shield as claimed in claim 1, it is characterized in that: above-mentioned micromatic setting can be used to control this light shield that is installed in this light shield support window that can install the several piece light shield, this light shield is moved along the X-axis or the y axle on plane, place, or rotate with the θ angle.
9, the light shield support of installing the several piece light shield as claimed in claim 1 is characterized in that: above-mentioned light shield support can be spaced from each other with about 0.1 to 5mm the window interval of width along between this window of X-direction arrangement.
10, a kind of little shadow exposure system can define the pattern of light shield on wafer, this little shadow exposure system comprises at least:
Exposure light source can produce and carry out the required parallel beam of little shadow program;
Can install the light shield support of several piece light shield, have a plurality of windows, in order to install a plurality of light shields, wherein on the side of this light shield, have micromatic setting, can when this light shield of installing is in this window, adjust the position and the angle of this light shield, and make these a plurality of light shields parallel completely to each other, and this light shield support can move in the plane, place, and makes this different light shields one by one by under this exposure light source, with the pattern that defines this light shield in regular turn on this crystal column surface;
The laser interferometer is in order to measure position and the displacement that this can install the light shield support of several piece light shield, so that the operator can accurately control moving of this light shield support that can install the several piece light shield;
Optical projection system is positioned at this light shield support that can install several piece light shield below, and in order to transmitting and to dwindle exposing light beam through this light shield, and the exposing light beam after will dwindling is projeced on this crystal column surface, and defines corresponding pattern; And
Platform, in order to carrying this wafer, can corresponding to this can install the several piece light shield the light shield support the position and move so that make the pattern of these a plurality of light shields, little shadow is exposed to position corresponding on this wafer.
11, little shadow exposure system as claimed in claim 10, it is characterized in that: above-mentioned little shadow exposure system is stepping-scanning microlithography system, when this light shield of desiring to carry out little shadow exposure, when being positioned under this exposure light source, by the strip light source that this exposure light source produced, mode that can fractional scanning, scanned whole this light shield one by one, and, be defined in this crystal column surface with the pattern of this light shield.
12, little shadow exposure system as claimed in claim 11, it is characterized in that: but nationality mobile this and can be installed the light shield support of several piece light shield, and in regular turn this different light shields is carried out stepping-scanning, and in same scan exposure program once, definition has comprised that the exposure calmodulin binding domain CaM of a plurality of these mask pattern is in this crystal column surface.
13, little shadow exposure system as claimed in claim 12, it is characterized in that: can be successively to several this light shields, carry out stepping-scanning sequence first time, and on this crystalline substance figure surface the definition comprise these several mask pattern first the exposure calmodulin binding domain CaM, then move this again and can install the light shield support of several piece light shield, so that, carry out stepping-scanning sequence second time, so that on this crystal column surface, define the second exposure calmodulin binding domain CaM that comprises these several mask pattern to other several these light shields.
14, little shadow exposure system as claimed in claim 10, it is characterized in that: above-mentioned little shadow exposure system is stepping-heavily a cover microlithography system, when this light shield of desiring to carry out little shadow exposure, when being positioned under this exposure light source, by light source that this exposure light source produces, the pattern of this light shield can be defined in this crystal column surface.
15, little shadow exposure system as claimed in claim 14, it is characterized in that: after this light shield is finished exposure program, this the light shield support that can install the several piece light shield can move so that this light shield that the next one will be exposed, move to this exposure light source under.
16, little shadow exposure system as claimed in claim 10, it is characterized in that: on the corner of the above-mentioned light shield support of installing the several piece light shield, has at least one positioning mirror, can reflect the thunder laser beam of laser interferometer, and nationality an inductor and detects by this positioning mirror beam reflected, the distance and the position of moving with this multiple mask of accurate measurement.
17, little shadow exposure system as claimed in claim 10, it is characterized in that: above-mentioned micromatic setting can be used to control this light shield that is installed in this light shield support window that can install the several piece light shield, this light shield is moved along the X-axis or the y axle on plane, place, or rotate with the θ angle.
18, little shadow exposure system as claimed in claim 10 is characterized in that: above-mentioned little shadow exposure system more comprises a shade, can cover partly this light shield, and define required part pattern on this crystal column surface when light shield be carried out little shadow exposure program.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106111 CN1223899C (en) | 2002-04-03 | 2002-04-03 | A few light shield installable light shield support and micro-image exposure system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02106111 CN1223899C (en) | 2002-04-03 | 2002-04-03 | A few light shield installable light shield support and micro-image exposure system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1448786A true CN1448786A (en) | 2003-10-15 |
| CN1223899C CN1223899C (en) | 2005-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02106111 Expired - Lifetime CN1223899C (en) | 2002-04-03 | 2002-04-03 | A few light shield installable light shield support and micro-image exposure system |
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| CN (1) | CN1223899C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7795601B2 (en) | 2006-06-01 | 2010-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to improve lithography throughput |
| CN1834788B (en) * | 2006-04-12 | 2010-11-03 | 上海集成电路研发中心有限公司 | Method of realizing continuous scanning to explore two patterns by using two mask plates |
| CN102428543A (en) * | 2009-04-08 | 2012-04-25 | 瓦里安半导体设备公司 | Techniques for processing a substrate |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN110794655A (en) * | 2019-11-19 | 2020-02-14 | 江苏上达电子有限公司 | Roller type curved surface exposure method |
| CN110794654A (en) * | 2019-11-19 | 2020-02-14 | 江苏上达电子有限公司 | Novel exposure machine structure exposure method capable of producing super-long products |
| CN111103772A (en) * | 2020-01-15 | 2020-05-05 | 江西沃格光电股份有限公司 | Exposure system |
-
2002
- 2002-04-03 CN CN 02106111 patent/CN1223899C/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834788B (en) * | 2006-04-12 | 2010-11-03 | 上海集成电路研发中心有限公司 | Method of realizing continuous scanning to explore two patterns by using two mask plates |
| US7795601B2 (en) | 2006-06-01 | 2010-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to improve lithography throughput |
| CN102428543A (en) * | 2009-04-08 | 2012-04-25 | 瓦里安半导体设备公司 | Techniques for processing a substrate |
| CN102428543B (en) * | 2009-04-08 | 2016-02-24 | 瓦里安半导体设备公司 | The technology for the treatment of substrate |
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN110794655A (en) * | 2019-11-19 | 2020-02-14 | 江苏上达电子有限公司 | Roller type curved surface exposure method |
| CN110794654A (en) * | 2019-11-19 | 2020-02-14 | 江苏上达电子有限公司 | Novel exposure machine structure exposure method capable of producing super-long products |
| CN111103772A (en) * | 2020-01-15 | 2020-05-05 | 江西沃格光电股份有限公司 | Exposure system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1223899C (en) | 2005-10-19 |
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