CN1841931A - 容差输入电路 - Google Patents
容差输入电路 Download PDFInfo
- Publication number
- CN1841931A CN1841931A CNA2005101058617A CN200510105861A CN1841931A CN 1841931 A CN1841931 A CN 1841931A CN A2005101058617 A CNA2005101058617 A CN A2005101058617A CN 200510105861 A CN200510105861 A CN 200510105861A CN 1841931 A CN1841931 A CN 1841931A
- Authority
- CN
- China
- Prior art keywords
- channel mos
- input circuit
- mos transistor
- input
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005096165A JP4188933B2 (ja) | 2005-03-29 | 2005-03-29 | トレラント入力回路 |
JP2005096165 | 2005-03-29 | ||
JP2005-096165 | 2005-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841931A true CN1841931A (zh) | 2006-10-04 |
CN1841931B CN1841931B (zh) | 2010-10-13 |
Family
ID=36626145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101058617A Expired - Fee Related CN1841931B (zh) | 2005-03-29 | 2005-09-29 | 容差输入电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7501852B2 (zh) |
EP (1) | EP1708365B1 (zh) |
JP (1) | JP4188933B2 (zh) |
KR (1) | KR100721300B1 (zh) |
CN (1) | CN1841931B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779947A (zh) * | 2011-06-27 | 2015-07-15 | 联发科技股份有限公司 | 接收电路 |
CN105227166A (zh) * | 2014-05-26 | 2016-01-06 | 中航(重庆)微电子有限公司 | 一种mos管背栅电压控制电路 |
CN109309494A (zh) * | 2017-07-26 | 2019-02-05 | 上海复旦微电子集团股份有限公司 | 可编程连接点 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7812642B1 (en) * | 2009-05-12 | 2010-10-12 | Xilinx, Inc. | Pass gate with improved latchup immunity |
EP2282175A3 (en) * | 2009-08-06 | 2011-10-19 | Yokogawa Electric Corporation | Measurement apparatus |
JP6116149B2 (ja) * | 2011-08-24 | 2017-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6113489B2 (ja) * | 2012-12-14 | 2017-04-12 | ラピスセミコンダクタ株式会社 | 半導体回路及び半導体装置 |
JP6213719B2 (ja) | 2013-08-08 | 2017-10-18 | セイコーエプソン株式会社 | 入力保護回路、電子デバイス、リアルタイムクロックモジュール、電子機器及び移動体 |
WO2021220479A1 (ja) * | 2020-04-30 | 2021-11-04 | 株式会社ソシオネクスト | 入力回路 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204848A (ja) | 1992-12-28 | 1994-07-22 | Toshiba Corp | インタ−フェ−ス回路 |
JP2888722B2 (ja) | 1993-04-12 | 1999-05-10 | 株式会社東芝 | インターフェース回路 |
JPH06326593A (ja) | 1993-05-12 | 1994-11-25 | Toshiba Corp | 半導体集積回路装置 |
US5473500A (en) * | 1994-01-13 | 1995-12-05 | Atmel Corporation | Electrostatic discharge circuit for high speed, high voltage circuitry |
JPH088707A (ja) | 1994-06-22 | 1996-01-12 | Fujitsu Ltd | 入力保護回路,電源制御回路及び液晶表示装置 |
US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
US5811857A (en) * | 1996-10-22 | 1998-09-22 | International Business Machines Corporation | Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications |
JPH10135818A (ja) | 1996-10-29 | 1998-05-22 | Mitsubishi Electric Corp | 入力回路 |
US5880605A (en) * | 1996-11-12 | 1999-03-09 | Lsi Logic Corporation | Low-power 5 volt tolerant input buffer |
US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
US5973530A (en) * | 1998-05-29 | 1999-10-26 | Lucent Technologies Inc. | Low power, high voltage-tolerant bus holder circuit in low voltage technology |
EP0994564A1 (en) | 1998-10-14 | 2000-04-19 | Lucent Technologies Inc. | Inverter circuit with duty cycle control |
JP3239867B2 (ja) * | 1998-12-17 | 2001-12-17 | 日本電気株式会社 | 半導体装置 |
US6628159B2 (en) * | 1999-09-17 | 2003-09-30 | International Business Machines Corporation | SOI voltage-tolerant body-coupled pass transistor |
US6404269B1 (en) * | 1999-09-17 | 2002-06-11 | International Business Machines Corporation | Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS |
US6690065B2 (en) * | 2000-12-28 | 2004-02-10 | Industrial Technology Research Institute | Substrate-biased silicon diode for electrostatic discharge protection and fabrication method |
JP2002280892A (ja) | 2001-03-15 | 2002-09-27 | Hitachi Ltd | 半導体集積回路 |
JP2003023101A (ja) * | 2001-07-05 | 2003-01-24 | Mitsubishi Electric Corp | 半導体装置 |
JP3883114B2 (ja) * | 2002-05-30 | 2007-02-21 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4133371B2 (ja) * | 2002-06-10 | 2008-08-13 | 株式会社ルネサステクノロジ | レベル変換回路 |
JP2004104608A (ja) | 2002-09-11 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 入力装置 |
US6965263B2 (en) * | 2002-10-10 | 2005-11-15 | Micron Technology, Inc. | Bulk node biasing method and apparatus |
US6972619B2 (en) * | 2002-12-17 | 2005-12-06 | Matsushita Electric Industrial Co., Ltd. | Amplifier with a gain proportional to power source voltage |
JP2004304475A (ja) | 2003-03-31 | 2004-10-28 | Kawasaki Microelectronics Kk | トレラント入力回路 |
KR100495430B1 (ko) * | 2003-05-21 | 2005-06-14 | 삼성전자주식회사 | 톨러런트 입력 회로 |
-
2005
- 2005-03-29 JP JP2005096165A patent/JP4188933B2/ja not_active Expired - Fee Related
- 2005-09-14 EP EP05255633A patent/EP1708365B1/en not_active Expired - Fee Related
- 2005-09-27 US US11/235,226 patent/US7501852B2/en not_active Expired - Fee Related
- 2005-09-29 CN CN2005101058617A patent/CN1841931B/zh not_active Expired - Fee Related
- 2005-10-07 KR KR1020050094479A patent/KR100721300B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779947A (zh) * | 2011-06-27 | 2015-07-15 | 联发科技股份有限公司 | 接收电路 |
CN105227166A (zh) * | 2014-05-26 | 2016-01-06 | 中航(重庆)微电子有限公司 | 一种mos管背栅电压控制电路 |
CN105227166B (zh) * | 2014-05-26 | 2018-06-26 | 中航(重庆)微电子有限公司 | 一种mos管背栅电压控制电路 |
CN109309494A (zh) * | 2017-07-26 | 2019-02-05 | 上海复旦微电子集团股份有限公司 | 可编程连接点 |
Also Published As
Publication number | Publication date |
---|---|
EP1708365A1 (en) | 2006-10-04 |
US7501852B2 (en) | 2009-03-10 |
KR20060105411A (ko) | 2006-10-11 |
US20060220686A1 (en) | 2006-10-05 |
JP4188933B2 (ja) | 2008-12-03 |
JP2006279569A (ja) | 2006-10-12 |
EP1708365B1 (en) | 2012-02-08 |
CN1841931B (zh) | 2010-10-13 |
KR100721300B1 (ko) | 2007-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081024 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081024 Address after: Tokyo, Japan, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150514 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150514 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20190929 |
|
CF01 | Termination of patent right due to non-payment of annual fee |