CN1790726A - 包括一个电阻器和一个二极管的非挥发性存储器 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种包括一个电阻器和一个二极管的非挥发性存储器。其包括:底部电极;电阻器结构,布置在底部电极上;二极管结构,布置在电阻器结构上;和上部电极,布置在二极管结构上。本发明的非挥发性存储器可以用简单工艺制造,可以用低电力驱动,具有快的运作速度。
Description
技术领域
本发明涉及包括一个电阻器和一个二极管的非挥发性存储器(nonvolatile memory device)。
背景技术
近年来,人们对半导体存储器已经进行了大量的研究,以增加单位面积的存储单元数量(即集成密度)和操作速度,并用低电力驱动,并且已经研制出各种类型的存储器。
通常,半导体存储器包括很多通过电路连接的存储单元。动态随机存取存储器(DRAM)是有代表性的半导体存储器,单位存储单元一般由一个开关和一个电容组成。这样的DRAM有利于增高集成密度和增快操作速度。然而,当电力供应切断时,DRAM丢掉所有的存储数据。
比较起来,一些非挥发性存储器,比如快闪存储器,即使突然断电仍可以保存存储的数据。快闪存储器有非挥发性的特点,但是比挥发性的存储器集成密度低和运行速度慢。
现在,这样的非挥发性存储器在艰苦地研究中,如磁随机存取存储器(MRAM)、铁电随机存取存储器(FRAM)和相变(phase-change)随机存取存储器(PRAM)等。
MRAM利用在隧道结中的磁化方向的变化来存储数据,FRAM利用铁电体材料的极化方向来存储数据。虽然MRAM和FRAM具有各自的优点和缺点,但是它们主要具有如上所述的集成信息密度高、运行速度快和可以用低电力驱动等特点。而且,研究证明MRAM和FRAM有很好的数据保存的特点。
此外,PRAM是利用某种材料的特性,即随着相变而产生的电阻改变来存储数据的一种存储器,其包括一个电阻器和一个开关(晶体管)。用于PRAM的电阻器是一种硫化物(VI族化合物,calcogenide)电阻器,其根据该电阻形成时控制的温度变为晶体或非晶体。PRAM是在晶体电阻器比非晶体电阻器更具阻抗性的原理上形成的。在采用传统的DRAM的生产工艺制造PRAM时,执行蚀刻工艺变得复杂又耗时。相应地,存储器的生产率降低而生产成本增加,这样减弱了其竞争力。
发明内容
本发明提供一种包括一个电阻器和一个二极管的非挥发性存储器,其用简单工艺制造,可以用低电力驱动,具有快的运作速度。
根据本发明的一个方面,提供了一种包括一个电阻器和一个二极管的非挥发性存储器。该存储器包括一个底部电极;一个电阻器结构,布置在底部电极上;一个二极管结构,布置在电阻器结构上;和一个顶部电极,布置在二极管结构上。
电阻器结构可以包括:缓冲层,布置在底部电极上;和数据存储层,布置在缓冲层上。
电阻结构可以至少由下述一种材料形成:NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO和Nb2O5。
二极管结构可以包括:第一氧化层,布置在电阻器结构上;第二氧化层,布置在第一氧化层上。此外,第一氧化层可以由p-型氧化物形成,而第二氧化层可以由n-型氧化物形成。
根据本发明的另一个方面,提供一种包括:一个电阻器和一个二极管的非挥发性存储器的阵列。该阵列包括:至少二条位线,以规则间隔排列;至少二条字线,以规则间隔排列,并布置成与位线相交;电阻器结构,布置在每个位线和字线相交处的位线上;以及二极管结构,其设置成与电阻器结构和字线相接触。
附图说明
本发明的上述和其它特点及优点参照附图通过对示范性实施例的详细描述从此将变得更为显见,其中:
图1A图解了根据本发明一个示范性实施例的非挥发性存储器,其包括:一个电阻器和一个二极管;
图1B是表示如图1A所示包括一个电阻器和一个二极管的非挥发性存储器所用材料特性的示意图;
图2图解了如图1A所示的非挥发性存储器的阵列结构。
图3是如图2所示包括一个电阻器和一个二极管的非挥发性存储器阵列等效电路的示意图;
图4是表示图1所示包括一个电阻器和一个二极管的非挥发性存储器运行特性的示意图;和
图5是解释如图2和3所示包括一个电阻器和一个二极管的非挥发性存储器运行原理的示意图。
具体实施方式
在下文,将参照附图更全面地介绍根据本发明的包括一个电阻器和一个二极管的非挥发性存储器,附图中示出了本发明的示范性实施例。
图1是根据本发明的示范性实施例包括一个电阻器和一个二极管的非挥发性存储器的截面视图。
参照图1A,非挥发性存储器包括:基板10、底部电极11、电阻层12和13、二极管结构14和15和顶部电极16,它们顺序地叠堆起来。这里,电阻层12和13起到数据存储部分的作用。第一电阻层12作为缓冲层,而第二电阻层13作为数据存储层。起到缓冲层作用的第一电阻层12可以任选形成。二极管结构14和15是p-n结结构,且包括第一氧化层14和第二氧化层15。
在此情况下,基板10可以是半导体基板,例如用于传统半导体装置上的硅(Si)基板。底部和顶部电极11和16可以由导体材料形成,例如传统上用于半导体装置电极的金属。特别是,用于底部电极11的材料可以根据形成于其上的材料的种类选择地决定。第一和第二电阻层12和13在底部电极11上形成。第一和第二电阻层12和13可以由过渡金属氧化物形成,例如NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO、Nb2O5中的至少一种。第一和第二电阻层12和13可以由相同的材料形成,例如NiO。
第一氧化层14可以由p-型氧化物形成,而第二氧化层15可以由n-型氧化物形成。例如,第一和第二氧化层14和15可以通过控制氧的比率得到透明的过渡金属氧化物。过渡金属氧化物具有导电特性,其随着过渡金属结合氧的数量而变化。第一和第二氧化层14和15可以采用与第二电阻层13相同的材料形成,但是,通过增加比第二电阻层13更多的氧的比率,它们呈现p-型半导体特性或n-型半导体特性。在下文,第一氧化层14和第二氧化层15将分别称为p-型氧化层14和n-型氧化层15。
图1B是表示如图1A所示包括一个电阻器和一个二极管的非挥发性存储器所用材料特性的示意图。具体地讲,图1B示出电阻随着形成NiOx的分数氧分压(fraction oxygen partial pressure)的变化关系。
参照图1B,当NiOx中氧的比例极小时(区域“A”),NiOx类似于镍的特性。然而,随着氧的比例逐渐增加(区域“B”),电阻快速增大,这显示了开关特性。随着氧比例的进一步增加(区域“C”),电阻逐渐减小,这显示了半导体特性。电阻层12和13的任何一个、p-型氧化层14和n-型氧化层15都可以由诸如氧化镍(NiOx)的过渡金属氧化物通过控制氧的比例来形成。在制造工艺上,采用溅射在试件上沉积同样的过渡金属,同时适当控制注入反应室的氧气的量,可以依次原位形成电阻层12和13,p-型氧化层14,和n-型氧化层15。当然,显见NiO之外的其他过渡金属氧化物及其组合可以表现出类似的特性。
图2图解了如图1A所示包括一个电阻器和一个二极管的非挥发性存储器的阵列结构。
参照图2,多个底部电极11规则间隔布置,而多个顶部电极16布置成与底部电极11相交叉。同样地,电阻层12和13及p-n结二极管结构14和15在底部电极11和顶部电极16的每个交叉点上形成。
图3是如图2所示包括一个电阻和一个二极管的非挥发性存储器阵列的等效电路图。
在下文,将参照图4描述根据本发明示范性实施例的包括一个电阻器和一个二极管的非挥发性存储器第二电阻层13的电特性。在图4中,横轴表示通过顶部和底部电极16和11施与的电压,纵轴表示通过第二电阻层13的电流。
图4示出二个电流-电压曲线G1和G2。曲线G1给出第二电阻层13的电阻降低的例子,即相同的电压,通过第二电阻层13的电流增大。相比之下,曲线G2给出第二电阻层13的电阻增高的例子,即相同的电压,通过第二电阻层13的电流减小。在本发明中,包括一个电阻器和一个二极管的半导体存储器利用如下详细描述的不同的电流-电阻特性。
开始,当施与电压从0到1V逐渐增加时,电流沿着曲线G1成比例增加。然而,随着电压施与到1V,电流突然减小,并沿着曲线G2变化。这一现象在V1≤V≤V2范围内也在继续。此外,当施与电压在V2<V时,电流再次沿着曲线G1增加。在这里,在曲线G1中的电阻称为第一电阻,而在曲线G2中的电阻称为第二电阻。可见第二电阻层13的电阻在V1≤V≤V2范围内突然增加。
从而,本发明者确认,根据本发明的包括一个电阻器和一个二极管的非挥发性存储器有如下特性。开始,在施与电压在V1≤V≤V2范围内之后,当施与电压范围V<V1时,检测出的电流是基于曲线G2的。在施与电压在V2<V范围内之后,当施与电压范围V<V1时,检测出的电流是基于曲线G1的。因此,非挥发性存储器可以相应地运用上述特性运行。
也就是说,根据本发明的示范性实施例的包括一个电阻器和一个二极管的非挥发性存储器,当通过底部和顶部电极11和16施与范围为V2<V的电压时,第一电阻存储在第二电阻层13中。同样地,当电压施与范围在V1≤V≤V2时,第二电阻存储在第二电阻层13中。由施与电压小于V1并读取电流值,就可以读取存储在第二电阻层13中的存储状态。
图5是解释如图2和3所示包括一个电阻器和一个二极管的非挥发性存储器运行原理的示意图。图5图解了四个存储单元‘aa’,‘ab’,‘ba’,‘bb’,而每个位线B1和B2及字线W1和W2由一对单元共用。
在第二电阻层13中存储第一电阻(图4所示曲线G1)的过程称为编程过程(设置),而在第二电阻层13中存储第二电阻(图4所示曲线G2)的过程称为擦除过程(重置)。
为了在图5所示‘aa’单元存储第一电阻,就要施与V2或更高的电压。为了这样运行,给位线B1和字线W2施与V0(V2<V0)的电压。这样,因为在顶和底部电极之间没有电位差,所以‘ab’和‘ba’单元不运行。同样,因为在其上施与反向电压,所以‘bb’单元也不运行。因此第一电阻仅在‘aa’单元存储。
此后,为了在‘aa’单元存储第二电阻,应该施与V1≤V≤V2的电压。为了实现这样的运行,V1≤V≤V2的电压仅施与位线B1和字线W2,而位线B2和字线W1接地。于是,第一电阻从‘aa’单元的第二电阻层13中擦除,而第二电阻在第二电阻层13中编程。第一电阻可以设计为‘0’,而第二电阻可以设计为‘1’,反过来设计也是可能的。
此外,‘aa’单元的第二电阻层13即数据存储层的电阻状态可以采用通过给‘aa’单元施与比V1小的电压Vr来测量电流值读取。在此情况下,如上所述,电压Vr仅施与给位线B1和字线W2,这可以确定所测量的电流对应于图4所示的相应的曲线G1还是曲线G2,并读取所存储的数据。
本发明有如下优点:
第一,非挥发性存储器的单位单元结构包括一个二极管和一个电阻器,其依次叠堆。这样,非挥发性存储器和其阵列单元结构在结构上非常简单。
第二,本发明的非挥发性存储器可以采用传统的DRAM制造工艺形成。与包括传统开关装置的存储器不同,在其上形成的电阻层和二极管结构可以通过控制氧的比例就地形成。结果,非挥发性存储器的制造非常简单,因此提高了生产率,降低了生产成本。
第三,考虑到本发明的运行原理,采用具有独特特性的材料这一简单方法可以存储和复制数据,这样能够使存储器高速运行。
尽管本发明参照示范性实施例已经进行详细示出和描述,但是本领域的技术人员会认识到,在其上进行的形式上和细节上的各种变化都不能脱离如所附权利要求所限定的本发明的精神和范围。
Claims (12)
1、一种包括一个电阻器和一个二极管的非挥发性存储器,其包括:
底部电极;
电阻器结构,其布置在该底部电极上;
二极管结构,其布置在该电阻器结构上;和
顶部电极,其布置在该二极管结构上。
2、根据权利要求1所述的非挥发性存储器,其中,该电阻器结构包括:
缓冲层,其布置在该底部电极上;和
数据存储层,其布置在该缓冲层上。
3、根据权利要求1所述的非挥发性存储器,其中,该电阻器结构至少由下述一组材料中选出的一种材料形成:NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO和Nb2O5。
4、根据权利要求1所述的非挥发性存储器,其中,该二极管结构包括:
第一氧化层,其布置在该电阻结构上;和
第二氧化层,其布置在该第一氧化层上。
5、根据权利要求4所述的非挥发性存储器,其中,该第一氧化层由p-型氧化物形成,该第二氧化层由n-型氧化物形成。
6、根据权利要求5所述的非挥发性存储器,其中,p-型氧化物和n-型氧化物的任何一个至少由下述一组材料中选出的一种材料形成:NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO和Nb2O5。
7、一种包括一个电阻器和一个二极管的非挥发性存储器的阵列,该阵列包括:
至少二条位线,它们以规则间隔排列;
至少二条字线,它们以规则间隔排列,布置成与该位线相交叉。
电阻器结构,其布置在该位线和字线的每个交叉点处的该位线上。
二极管结构,其布置成与该电阻器结构和该字线相接触。
8、根据权利要求7所述的阵列,其中,该电阻器结构包括:
缓冲层,其布置在该底部电极上;和
数据存储层,其布置在该缓冲层上。
9、根据权利要求7所述的阵列,其中,该电阻器结构至少由下述一组材料中选出的一种材料形成:NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO和Nb2O5。
10、根据权利要求7所述的阵列,其中,该二极管结构包括:
第一氧化层,其布置在该电阻器结构上;和
第二氧化层,其布置在该第一氧化层上。
11、根据权利要求10所述的阵列,其中,该第一氧化层由p-型氧化物形成,而该第二氧化层由n-型氧化物形成。
12、根据权利要求10所述的阵列,其中,p-型氧化物和n-型氧化物的任何一个至少由下述一组材料中选出的一种材料形成:NiO、TiO2、HfO、ZrO、ZnO、WO3、CoO和Nb2O5。
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- 2005-11-10 CN CN200510120431A patent/CN100593242C/zh active Active
- 2005-11-10 US US11/270,459 patent/US7602042B2/en active Active
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US8350247B2 (en) | 2006-11-16 | 2013-01-08 | Samsung Electronics Co., Ltd. | Resistive random access memory having a solid solution layer and method of manufacturing the same |
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US8173989B2 (en) | 2007-05-30 | 2012-05-08 | Samsung Electronics Co., Ltd. | Resistive random access memory device and methods of manufacturing and operating the same |
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US8916413B2 (en) | 2011-10-21 | 2014-12-23 | Semiconductor Manufacturing International (Shanghai) Corporation | Phase change memory and manufacturing method therefor |
CN103066202B (zh) * | 2011-10-21 | 2015-03-04 | 中芯国际集成电路制造(北京)有限公司 | 相变存储器及其制造方法 |
CN103247335A (zh) * | 2012-02-07 | 2013-08-14 | 中国科学院微电子研究所 | 一种存储器器件及其阵列 |
Also Published As
Publication number | Publication date |
---|---|
US20080121865A1 (en) | 2008-05-29 |
JP4981304B2 (ja) | 2012-07-18 |
KR100657911B1 (ko) | 2006-12-14 |
US7602042B2 (en) | 2009-10-13 |
EP1657753A3 (en) | 2008-12-10 |
CN100593242C (zh) | 2010-03-03 |
EP1657753B1 (en) | 2011-06-22 |
KR20060042734A (ko) | 2006-05-15 |
JP2006140489A (ja) | 2006-06-01 |
EP1657753A2 (en) | 2006-05-17 |
US20060098472A1 (en) | 2006-05-11 |
US7935953B2 (en) | 2011-05-03 |
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