CN1775656B - 高密度纳米结构互连 - Google Patents

高密度纳米结构互连 Download PDF

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CN1775656B
CN1775656B CN2005100628524A CN200510062852A CN1775656B CN 1775656 B CN1775656 B CN 1775656B CN 2005100628524 A CN2005100628524 A CN 2005100628524A CN 200510062852 A CN200510062852 A CN 200510062852A CN 1775656 B CN1775656 B CN 1775656B
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nanostructured
substrate
interconnection
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CN1775656A (zh
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纳戈什·R.·巴萨万哈利
雷蒙德·A.·司瑞利
奥玛·D.·络皮兹
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Nokia of America Corp
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Abstract

本申请涉及高密度纳米结构互连。具体地，公开了用于形成导电和/或导热互连的方法和设备，其中，使第一表面和第二表面通过设置在所述表面中的至少一个上的多个纳米结构相互接触。在一个实施例中，纳米结构的第一组区域被设置在电子封装的部件例如微处理器上。然后使所述第一组区域与衬底上的纳米结构的对应的第二组区域接触，从而产生强的摩擦接合。在另一个说明性的实施例中，在部件比如微处理器上设置多个纳米结构，然后使纳米结构与衬底接触。纳米结构的分子和衬底的分子之间的吸引力产生分子间作用力，从而在纳米结构和衬底之间形成接合。

Description

高密度纳米结构互连
技术领域
本发明总体上涉及热和电互连，尤其涉及纳米结构的热和电互连。
背景技术
在现有技术中，将电子部件电连接或者热连接到例如导体或者半导体衬底上的方法是公知的。例如，使用热压方法和焊料焊接方法来例如在光电器件和/或微电机(MEMS)器件中的部件之间建立连接。
图1图示了一种用作说明的方法，用于形成热压结合，以用作热或者电互连。具体地，在该图中，部件101具有一个材料层102，该材料层一般是适合压力接合的金。为了将部件101与用作说明的衬底105接合起来，将部件101上的层102例如在方向104上下降，使之与衬底105上的材料层103(作为说明，同样是金)接触。施加足够高的温度(例如300摄氏度)和压强(例如10千克力每平方毫米金面积)，使得金层变形和接合起来。但是，尽管在许多方面这种金-金热压接合是有用的，但是建立这种接合所需的温度和压强可能损坏敏感的电子元件比如晶体管。随着在例如MEMS器件中部件变得越来越小，相对来说较高的温度和压强更容易对越来越脆弱的部件造成损坏。
图2图示了另一种说明性的热或者电连接两个电子部件的现有方法。具体地，在该图中，衬底200例如是电子芯片比如MEMS封装中的微处理器的表面。使用公知的方法在芯片上建立焊料块201。为了在芯片和衬底比如印刷线路板之间建立电或者热连接，使所述焊料块与连接点接触，然后加热，使它们重熔。这样就使焊料块与作为举例的印刷线路板上的连接点接触。这样的焊料块方法是公知的，在形成电和热连接方面很有优势。但是，同样的，使焊料重熔所需的温度可能会损坏MEMS封装中的MEMS部件。另外，某些设计上的考虑限制了焊料块的使用。具体地，这样的焊料部必需大于特定的尺寸，一般要大于20-50微米的直径，以实现所需的焊料块高度。另外，由于不希望在焊料重熔时使焊料块相互接触，焊料块一般必需分开一个最小距离，例如相邻焊料块的中心相距50微米。
最后，另一种将两个部件接合起来的现有技术方法是使用导热和/或导电粘合剂。但是，这样的粘合剂一般在硬化时要经过除气作用，这会在关键的电子部件上引入破坏性的有机物质，这会干扰小部件的正常性能。
发明内容
本发明人发明了一种进行电子部件的热和/或电连接的设备和方法，基本上解决了与连接有关的上述问题。具体地，建立一种导电和/或导热互连，其中，第一和第二表面通过设置在所述第一表面和所述第二表面中的至少一个上的多个纳米结构相互接触。在一个实施例中，纳米结构的第一组区域被设置在电子封装(例如微处理器)中的一个部件上。然后使该第一组区域与衬底上的纳米结构的相对应的第二组区域接触。当接触时，所述第一组区域中的纳米结构与所述第二组中的纳米结构相互交错，从而形成强的摩擦接合。当第一和第二组中的纳米结构导热时，就形成了热互连。当第一和第二组中的纳米结构导电时，就形成了电互连。
在另一个说明性的实施例中，在一个部件比如微处理器上设置多个纳米结构，然后使之与衬底接触。分子间力在纳米结构的分子和衬底的分子之间产生吸引力，从而在纳米结构和衬底之间建立连接。在另一个说明性的实施例中，在部件和衬底之间设置一个具有两个纳米结构表面的中间层。所述部件和衬底分别与所述纳米结构表面之一接触，从而由部件和中间层以及衬底和中间层之间的分子间力形成接合。这样，无需现有的互连方法所需的温度和力，就形成了强的导热和/或导电互连，这对电子封装中的应用是有用的。
附图说明
图1图示了形成热压接合的现有技术方法；
图2图示了具有多个焊料块的现有技术的电子部件；
图3图示了根据本发明的原理的用于说明的目的的纳米结构表面；
图4A和4B图示了一个说明性的实施例，用以说明根据本发明的原理，如何使用诸如图3所示的说明性的表面来建立压力接合；
图5图示了如何能够在两个部件之间形成多个互连，比如图4B所示的互连；
图6A和6B图示了一个说明性的实施例，用以说明如何使用分子间力来形成接合，以将图3的表面接合到衬底上；
图7图示了使用分子间力形成的接合的另一个说明性的实施例。
具体实施方式
图3图示了根据本发明的原理的举例的表面300，其中在衬底305，比如硅衬底上制造了多个纳米结构301，在这里是纳米柱。制成了比如如图3所示的圆柱形纳米柱阵列，每一个纳米柱的直径小于10nm。本领域的普通技术人员会理解，使用各种不同的方法，可以制造出纳米柱的许多不同的布置(例如尺寸、节距和高度)，这样的各种不同的直径的纳米柱可以形成不同程度的规则性。在美国专利6185961(题为″Nanopost arrays and process for making same″，授权日2001年2月13日，Tonucci等)中公开了制造纳米柱的举例的方法，该文献再次整体引为参考。可以使用各种方法，比如使用模板形成柱，通过各种光刻手段，通过各种蚀刻方法，来制造纳米柱。
按照一般的定义，“纳米结构”是这样定义的结构：至少一个维度小于1微米；“微米结构”是这样定义的结构：至少一个维度小于1毫米。但是，虽然这里所公开的实施例提到的是纳米结构和纳米结构表面，但是，对于本领域普通技术人员来说，很清楚，发明人想要表达的是，在许多情况下，可以替换成微米结构。因此，发明人在这里将纳米结构定义为既包括至少一个维度小于1微米的结构，又包括至少一个维度小于1毫米的结构。术语“结构图案”指的是微米结构的图案或者纳米结构的图案。
图3的纳米柱301例如是聚合物材料柱，涂有薄层的金或者其它适合用作电和/或热导体的材料。本领域的普通技术人员完全能够理解，可以选用许多合适的材料来使纳米柱具有所需的导电和/或导热性。这里，纳米柱301例如具有200nm的直径和例如2微米的高度303。纳米柱301例如被设置在这样的一个区域中：该区域的横截面宽度304(例如是圆的直径或者方形区的边长)为10微米。本领域的普通技术人员还会认识到，考虑到本说明书所提供的信息，可以有许多适当的布置方案具有同等的优点。
图4图示了使用图3的纳米结构建立的电或者热互连的说明性的的实施例。具体地，见图4A，表面401(例如是微处理器芯片的表面)上的纳米柱402在方向403上移动，使得它们与表面405上的纳米柱404接触。从图4B可以看到，当表面401上的纳米柱402接触纳米柱404时，两个表面上的纳米柱会相互交错。如果纳米柱之间的间隔距离比如图3中的间隔距离302选得合适，则表面401上的所有的或者相当大数量的纳米柱402会接触表面405上的一个或者多个纳米柱404。因此，由于纳米柱402和404是导热和/或导电的，只需要在室温或者接近室温通过施加最小程度的压力使得所述两个纳米结构区域相互接触，就能建立热或者电互连。这样，例如，在电连接的情况下，信号能够通过所述互连从表面405上的电路传递到表面401上的电路。类似地，如果每一个表面的纳米柱是用合适的导热材料制造的或者涂覆了合适的导热材料(例如金镀层)，则热能能够通过该互连传递。这样，例如，热能够通过表面401和405的纳米柱之间的互连而耗散。由于上述接触而导致的粘附力比较高，这是因为两个表面上的纳米结构的大表面积相互接触。这样的高粘附力产生的原因有二：纳米柱之间产生的摩擦力，以及每一个表面的纳米柱的分子之间的分子间力(分子间作用力)，比如公知的范德华力。这样，就形成了适合用于在电子封装中连接电子部件的粘附互连。
本领域的普通技术人员会认识到，这里所描述的互连可以类似于图2所示的焊料块的布置那样被设置在部件或者衬底的表面上。具体地，可以在部件比如微处理器的表面上设置小面积的纳米柱，以建立差不多象焊料块电连接那样的电连接。如图5所示，可以在部件501(同样，例如可以是微处理器)的表面上可以设置多个区域的纳米柱502，它们可以与表面504(例如是印刷线路板的表面)上的多个对应区域的纳米柱503相接触，以形成微处理器501的运行所需的电互连。同样，所述互连产生强大的连接力，这是由于部件501和表面504上的纳米柱之间的摩擦力和/或分子间作用力。
尽管类似于现有技术中的焊料块互连的功能，但是图4B和图5所示的举例的互连更有优势：与传统的焊料块连接相比，可以制造成更小的尺寸。例如，如上所述，一个纳米柱区的横截面宽度可以是例如10微米，可以由例如5微米的间距分开。这样，对于例如微处理器的给定表面积，与焊料块互连相比，可以实现大得多的密度的纳米结构。这样，例如，使用根据本发明的原理的纳米结构互连，可以有利地制造要求更小的印刷线路板空间的更小的部件。
图6A和6B图示了使用类似于图3所示的纳米结构表面的纳米结构表面可以实现的热或者电连接的又一个用途举例。如前所述，在电子部件比如芯片或者衬底之间形成导电或者导热连接的典型的现有技术方法要求进行焊接或者使用能够传导的粘合剂，如上所述，在小型器件比如MEMS器件中，焊接或者粘合剂是不利的。因此，见图6A，本发明的发明人发明了一种在部件601(同样，例如是微处理器)和表面603(例如是导热金属箔比如铝箔的表面)之间建立热或者电连接的方法。本领域的普通技术人员会认识到，为了实现导电连接，对纳米柱602和衬底603都要使用合适的导电材料。
在此说明性的例子当中，为了形成导热互连，在图6A和6B的说明性的实施例中，纳米柱602是用聚酰亚胺材料制造的，比如苯均四酸二酐氧二苯胺(pyromellitic dianhydride-oxydianiline)聚酰亚胺材料。本领域的普通技术人员会认识到，根据本发明的原理，可以使用许多其它公知的聚酰亚胺材料来实现有优势的纳米柱。在A.K.Geim等人的″Microfabricated Adhesive Mimicking GeckoFoot-Hair，″Nature Materials，Volume 2，July 2003，p.461-463中总体上描述了适合根据本发明的原理使用的制造和使用纳米结构或者微米结构表面的方法。该文章在此全文引为参考。如该文章所述，当纳米结构表面比如图6A中具有纳米结构602的表面601与合适的衬底比如图解的导热表面603接触时，就可以在所述纳米结构和衬底之间实现相对较强的连接。如图6B所示的这种连接是由纳米结构602的分子和图解的衬底603的分支之间的毛细作用和分子间吸引力产生的。具体地，这样的连接是这样产生的：选择合适的纳米结构直径、密度和间距，以产生所需的、由于纳米结构601对衬底的分子吸引力的集合而产生的吸引力。用这种方法产生的连接例如能够产生例如3N每平方厘米纳米结构面积的吸引力。在现有技术中，分子间吸引力是公知的，在下述文章中有总体的描述：″Intermolecular Bonding-VanDer Waals Forces″，在2004年3月25日或此之前公开于下述因特网址上：http：//www.chemguide.co.uk/atoms/bonding/vdw.html，该文献在此全文引为参考。
再看图6B，使用举例的厚度在大约25和50微米之间的挠性箔衬底603，以允许纳米结构适应衬底的不均一性质，这样，如Geim的文章所述，增强了纳米结构和衬底之间的吸引力。这样，通过对图6B中的纳米柱602和衬底605使用合适的导热或者导电材料，可以建立相对较强的互连。本领域的普通技术人员会认识到，可以不在图6A和6B中的部件上直接设置纳米结构，而是可以采用其它的布置方案。例如，如图7所示，可以在部件701和衬底703之间设置一个纳米结构的中间层702。在这样的布置方案中，可以在中间层702的两个侧面上制造纳米结构，然后可以使之同时与部件701和衬底703接触，使得分子间作用力将部件和衬底接合到所述纳米结构上。这里所公开的实施例的教导内容意图覆盖使用纳米结构建立热或者电连接的所有方法。
上面只是举例说明了本发明的原理。本领域的普通技术人员会理解，可以设计出各种各样的布置方案，这些方案尽管没有在此明确地图示或者描述，但是体现了本发明的原理，因此仍在本发明的实质范围之内。例如，考虑到这里对各种实施例的描述，本领域的普通技术人员会认识到本发明的原理可以用于范围广泛的各种不同的领域和应用。本领域的普通技术人员能够设计出本发明的内在原理的许多类似的应用，它们都应被包括在本发明的范围之内。例如，尽管在这里的实施例中说明性地图示了摩擦力和分子间吸引力，本领域的普通技术人员会认识到，在建立和维持纳米结构和表面之间的互连方面(无论这些表面是否具有纳米结构)，可以使用许多不同的吸引力，比如电磁力、离子力和/或量子力。
这里所记载的所有的例子和条件式语言只是用于教学的目的，以帮助读者理解本发明的原理。因此，这里的说明不应被解释为将本发明限制于这里所具体描述的例子和条件。相反，这里有关本发明的各个方面和实施例的陈述，以及其具体例子，都应包括功能上的等同物。

Claims (9)

1.一种用于电学部件的互连结构，包括：
第一表面；
第二表面；
设置在所述第一表面和所述第二表面中的一个上的多个纳米结构，其中所述多个纳米结构的直径、间距、密度或它们的任何组合被配置为利用吸引力连接所述第一表面和第二表面，使得所述纳米结构形成所述第一表面和所述第二表面之间的至少一个第一传导连接。
2.根据权利要求1所述的互连结构，其中所述传导连接包括热连接。
3.根据权利要求1所述的互连结构，其中所述传导连接包括电连接。
4.根据权利要求1所述的互连结构，其中所述吸引力包括毛细作用力。
5.根据权利要求1所述的互连结构，其中所述吸引力包括分子间吸引力。
6.根据权利要求5所述的互连结构，其中所述分子间吸引力包括范德华力。
7.一种用于电学部件的互连结构，包括：
第一表面；
第二表面；
设置在中间层的一侧上的第一组纳米结构以及设置在所述中间层的相对侧上的第二组纳米结构，所述中间层被配置为位于所述第一表面和所述第二表面之间，其中所述第一组纳米结构的直径、间距、密度或它们的任何组合被配置为利用吸引力将所述中间层粘附到所述第一表面上，以及所述第二组纳米结构的直径、间距、密度或它们的任何组合被配置为利用吸引力将所述中间层粘附到所述第二表面上。
8.根据权利要求7所述的互连结构，其中所述吸引力包括毛细作用力。
9.根据权利要求7所述的互连结构，其中所述吸引力包括分子间力。
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US7402913B2 (en) 2008-07-22
KR20060044769A (ko) 2006-05-16
US7327037B2 (en) 2008-02-05
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US20080001306A1 (en) 2008-01-03
JP2005294844A (ja) 2005-10-20
US20060097252A1 (en) 2006-05-11
US7560817B2 (en) 2009-07-14
US20050224975A1 (en) 2005-10-13

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