CN1764551A - Shift method and the donor element of thermo-sensitive material to substrate - Google Patents
Shift method and the donor element of thermo-sensitive material to substrate Download PDFInfo
- Publication number
- CN1764551A CN1764551A CNA2004800083329A CN200480008332A CN1764551A CN 1764551 A CN1764551 A CN 1764551A CN A2004800083329 A CNA2004800083329 A CN A2004800083329A CN 200480008332 A CN200480008332 A CN 200480008332A CN 1764551 A CN1764551 A CN 1764551A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- donor element
- recipient
- fragility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 229920000642 polymer Polymers 0.000 claims abstract description 23
- 238000001931 thermography Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 145
- 239000011241 protective layer Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000004800 polyvinyl chloride Substances 0.000 claims description 9
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 9
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- -1 dimethyl ethyl Chemical group 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 229920000728 polyester Polymers 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229930192474 thiophene Natural products 0.000 claims description 5
- 239000004695 Polyether sulfone Substances 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 4
- 229920006393 polyether sulfone Polymers 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical class C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 2
- 150000002475 indoles Chemical class 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 229920003145 methacrylic acid copolymer Polymers 0.000 claims description 2
- 229940117841 methacrylic acid copolymer Drugs 0.000 claims description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 2
- 229920001610 polycaprolactone Polymers 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002717 polyvinylpyridine Polymers 0.000 claims description 2
- 229940117958 vinyl acetate Drugs 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 125000005582 pentacene group Chemical group 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 238000007639 printing Methods 0.000 description 12
- 239000000975 dye Substances 0.000 description 11
- 229920000767 polyaniline Polymers 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CJMZLCRLBNZJQR-UHFFFAOYSA-N ethyl 2-amino-4-(4-fluorophenyl)thiophene-3-carboxylate Chemical compound CCOC(=O)C1=C(N)SC=C1C1=CC=C(F)C=C1 CJMZLCRLBNZJQR-UHFFFAOYSA-N 0.000 description 3
- 239000004088 foaming agent Substances 0.000 description 3
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 235000014692 zinc oxide Nutrition 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000004821 Contact adhesive Substances 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229920000690 Tyvek Polymers 0.000 description 1
- 239000004775 Tyvek Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 229920001746 electroactive polymer Polymers 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000007701 flash-distillation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
- B41M5/44—Intermediate, backcoat, or covering layers characterised by the macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
- B41M5/38214—Structural details, e.g. multilayer systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
- B41M2205/30—Thermal donors, e.g. thermal ribbons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Formation Of Insulating Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Disclose the method that forms patterned semiconductor-dielectric substance by by the use of thermal means on substrate, but comprised heating thermal imaging donor element, donor element comprises that substrate and semi-conducting material are in conjunction with dielectric transfer layer.With the required pattern that will on recipient, form just as the exposure alms giver, thereby the exposed portion of semiconductor and dielectric material layer is shifted simultaneously, forms the required pattern of semiconductor and dielectric substance on recipient.Semi-conducting material can be patterned the formation thin film transistor (TFT).Method also can be used for forming the pattern of light emitting polymer or little molecule and electric charge injection layer to form the active display of photosensitive organic used for electronic device.Also disclose and be used for the method donor element.The method that forms thin film transistor (TFT) and the used donor element of method is also disclosed.
Description
Invention field
The present invention relates to shift the method for fragility or thermo-sensitive material by thermal imaging method.The present invention+also relate to sandwich construction that is used to carry out this method.These methods comprise that the heat transfer by induced with laser is imaged on the pattern that forms light emitting polymer or semiconductor-dielectric material on the substrate.The present invention relates to form the method for film organic transistor (TFT) and polymer light-emitting display (PLED) by this by the use of thermal means.
The invention technical background
Made thin film transistor (TFT), organic semiconducting materials such as pentacene, poly-inferior thienyl ethenylidene (polythieneylenevinylene), thiophene oligomers, benzothiophene dimer and polyacetylene in conjunction with organic semiconducting materials.Organic material also can be used for forming transistorized other element, as the conductive layer that forms grid, source electrode and drain electrode with form dielectric insulating barrier.
The all or part of comparable conventional transistor of being made by organic material of transistor is cheaply made with being easy to.Although also do not reach and silicon transistor components identical density, the low cost of organic transistor means that they can be used for not requiring high density and the uneconomic application of conventional transistor.For example, organic transistor can be used for cheapness or one-time item, as electronic paper, placard and books, smart card, toy, utensil be used for the electronic bar code of product sign.Organic transistor also can be flexible, and this is favourable in some applications.For example, the flexible transistor array can be used for LCD (LCD), kneetop computer and the TV of flexible electrophoretic display, PLED and computer.Although the saving of manufacturing cost is that significantly the further reduction of organic transistor manufacturing cost is favourable.
Can organic material be applied on the transistorized part by spin coating, casting, printing or other method.Some organic materials also can apply by physical gas-phase deposite method.The electroactive polymer presoma also can be applied in and change into polymer, and is general by heating.Use mask that direct pattern can be provided in deposition process.If use photoresist in deposition process, then post-depositional wet chemical etching is essential, and this may cause organic semi-conductor seriously to be demoted.Although the manufacturing technology that needs than silicon-based transistor easily and cheap, that this method remains is complicated, slow, lack enough decomposing force, expose device in harmful heat and chemical process, and more expensive than essential.
Make the potentiality that organic transistor provides further cost to reduce by printing technology fully.People's such as F.Garnier " All Polymer Field-Effect Transistor Realized byPrinting Techniques ", Science, 265 volumes, on September 16th, 1994, the 1684-1686 page or leaf discloses by seeing through mask deposition electrically conductive graphite based polyalcohol printing ink formation grid, source electrode and drain electrode and has formed transistor.With α, ω-two (hexyl) six thiophen semiconductors materials deposit in source electrode and the drain electrode by flash distillation.
People's such as Z.Bao " High-Performance Plastic Transistors Fabricated byPrinting Techniques ", Chem.Mater.1997,9,1299-1201 discloses the transistorized production of high-performance, and wherein primary element is printed directly on the plastic supporting base that scribbles tin indium oxide (ITO).Use mask to form the printed patterns of transistor unit.
Ink jet printing also is used to apply organic semiconducting materials.Referring to US6087196, EP0880303A1, WO99/66483 and WO99/43031.Although help manufacture process, to use for some, serigraphy and ink jet printing can not provide enough decomposing force.In addition, also be difficult to control the glacing flatness and the uniformity of final film in the ink jet printing process.
Thermal transfer method is well-known in using as color proof.This thermal transfer method comprises that for example dye sublimation, dyestuff shift, fusion is shifted and ablator shifts and generally uses the imaging heat of laser instrument induced material to shift.These methods are described among UK2083726, US4942141, US5019549, US4948776, US5156938, US5171650 and the US4643917.
The thermal transfer method of induced with laser generally uses donor element, comprises the material layer (" transfer layer ") and the recipient element that will be transferred, and comprises the surface that is used to accept material for transfer.The substrate of donor element or recipient element is transparent, or the both is transparent.Make donor element and recipient element closely near or contact with each other, and optionally be exposed to laser emission, utilize infrared laser usually.Expose portion at transfer layer produces heat, and these parts of transfer layer are transferred on the surface of recipient element.If the material of transfer layer can not absorb the laser emission of incident, then donor element must comprise the zone of heating near transfer layer.Ejection (ejection) layer of the polymeric material of can vaporizing also can be provided between zone of heating and alms giver's carrier, and it resolves into gaseous molecular when being heated.The expose portion that promotes transfer layer that is decomposed into of ejection layer provides additional force to the recipient element.
In a kind of digital thermal transfer method of induced with laser, only expose and take place once, thereby the transfer of material from donor element to the recipient element can be once by accumulation 1 pixel at the little selection area that installs.Computer control helps the transfer of high-speed and high definition.Perhaps, in similar approach, the whole device of radiation, but and use mask optionally to expose the required part (US5937272) of thermal imaging layer.
The thermal transfer method of induced with laser is generally than above-mentioned coating, deposition with become the pattern method fast and cheap, and allows high definition ground formation characteristic pattern.Although project of printing provides at a high speed in printing machine, large tracts of land printing and high definition, the by the use of thermal means of induced with laser has the attendant advantages that does not need follow-up printed layers solvent compatibility, thereby has enlarged the scope that can use material.But, also do not have to realize direct heat printing to the ultrathin film of the semiconductor of the responsive fragility of disturbance (for example big thermograde, humidity, pressure or mechanical stress) or luminous organic material.The trial of thermal transfer material such as pentacene, copper fluoride phthalocyanine or luminous organic material causes the severely degrade and/or the part evaporation of material usually.
The thermal transfer method that needs a kind of thermal transfer method, especially induced with laser can be used for making organic transistor and the used organic semiconducting materials of other organic electronic device forms with manufacturing luminescent device such as used the applying with pattern of luminescent material of display.
Summary of the invention
Method of the present invention provides a kind of method of using thermal imaging method to shift fragility or thermo-sensitive material.Method of the present invention comprises:
A. form donor element, this donor element comprises:
I. substrate; With
Ii. the transfer layer and the protective layer between substrate and fragility or heat-sensitive layer that comprise fragility or thermo-sensitive material;
B. the transfer layer of placing donor element contacts with the recipient element; With
C. the selection zone that exposes donor element to laser emission to shift the sandwich construction that the part transfer layer forms patterning to the recipient element.
But the present invention also provides the thermal imaging donor element, comprising:
A. substrate;
B. zone of heating;
C. protective layer; With
D. fragility or heat-sensitive layer.
Method of the present invention and donor element are used to make thin film transistor (TFT) and polymer light-emitting display.
The accompanying drawing summary
Fig. 1 is the transistorized side view of thermal imaging.
Fig. 2 is top contact thin film transistor (TFT) and the transistorized side view of end contact membrane.
Fig. 3 is the side view of polymer LED (PLED).
Fig. 4 is the figure of printed transistor IV characteristic.
Fig. 5 is the scintigram of printed transistor.
Detailed Description Of The Invention
Term used herein " organic electronic device " refers to that wherein any element such as semiconductor, conduction or light-sensitive element all are the electronic device of organic material.
The term " vicinity " that also uses herein must not refer to that a layer directly is next to another layer. Can think to provide one or more intermediate layers in the middle of the layer located adjacent one another.
Method of the present invention provides by thermal imaging and has shifted temperature-sensitive or fragile material to the method for recipient element from donor element. This method is particularly useful for making organic electronic device such as TFT and PLED. Fragility or thermo-sensitive material are incorporated in the transfer layer of donor element, and are not subjected to produce in the thermal transfer method impact of heat owing to protective layer. The example of interested especially fragility or thermo-sensitive material is organic or inorganic semiconductor, light emitting polymer and little molecule emitter, but method also can be used for shifting firmer material. Protective layer can be included in the structure electronic device also useful material. Dielectric and charge injection material are respectively preferred protective layers during TFT and PLED make. Method of the present invention also can be used for shifting simultaneously one or more electroactive layers, and the process simplification and the registration fidelity that cause making in the multilayer electronic device architecture are improved.
In one embodiment of the present invention, disclose the thermal imaging method of the pattern of a kind of formation semi-conducting material (for example p-or n-type organic or inorganic semiconductor) and dielectric material, wherein material is transferred to simultaneously on the recipient that forms pattern or do not form pattern and is formed sandwich construction. Sandwich construction can be used for electronic device, includes organic electronic device. For example, semiconductor layer and dielectric layer can be transferred to by method heat of the present invention and before be deposited on the source electrode and drain electrode of accepting on the substrate, then can form " end contact membrane transistor " by the print gates layer on the semiconductor layer that shifts and dielectric layer top. In the preferred embodiment of this method, donor element comprises flexible substrate, scribbles zone of heating and the semiconductor layer on the dielectric layer top of dielectric layer. When this alms giver of thermal imaging, semiconductor layer is directly transferred in source electrode (112) and the drain electrode (114), electrolyte (118) and semiconductor layer (16) are transferred simultaneously, with identical pattern and do not destroy semiconductor-dielectric interface. Can shift other dielectric layer to cover any irregularity part of the first dielectric layer by thermal imaging or other technology. Can grid layer (120) be printed onto on the dielectric layer by thermal imaging or conventional method, to finish the transistorized manufacturing (seeing Fig. 2) of end contact structures.
Perhaps, in " top contact " structure, grid will be printed on the recipient, then print dielectric by thermal imaging or other printing process at grid. Next depositing semiconductor layers applies source electrode and drain electrode on the semiconductor layer top at last, shifts or other printing process by heat.
Except semiconductor-dielectric layer, method of the present invention can be a plurality of dielectric layers and forms pattern, as long as the pattern of each layer is identical in a plurality of layer. For electric insulation, can apply continuous dielectric layer.
Also can use negative imaging pattern to form pattern for one or more layers simultaneously. In negative imaging pattern, remove the zone of required pattern outside by laser ablation or alternate manner to form the layer (for example semiconductor layer, dielectric layer or dielectric+semiconductor layer) of patterning. Then but the layer of registration lamination pattern is to other element of the source electrode that prints and drain electrode or required electronic device. This negative formation method also can be combined with the formation electronic device with method of the present invention.
Can negative be imaged on the upper dielectric that forms patterning of alms giver and organic semiconductor layer manufacturing in conjunction with the organic semi-conductor thin film transistor (TFT) by utilizing. Then utilize the dielectric and the organic semiconductor layer that are laminated to source electrode and the upper deposit patterned of drain electrode, then deposit grid.
In different transistor arrangements, the pattern of dielectric substance can shift by heat and directly transfer on the grid layer. After the transfer that is printed on dielectric layer of source electrode and drain electrode. Then then the organic semiconducting materials that utilizes method of the present invention to shift to have protective layer deposits grid on source electrode and drain electrode layer.
In another embodiment of the present invention, the thermal transfer method of the pattern of formation light emitting polymer (or little molecule emitter) and charge injection material is disclosed, wherein polymer and charge injection material are transferred on the recipient element simultaneously. In this method, donor element comprises the charge injection material layer of substrate, adjacent substrate and the light emitting polymer of adjacent charge implanted layer (or little molecule emitter) layer. Donor element also can comprise zone of heating between substrate and electric charge injection layer, and comprises optional ejection layer between substrate and zone of heating. In this method; electric charge injection layer is as protective layer; the responsive light emitting polymer (or little molecule emitter) of protection can directly not be exposed to the heat that laser beam produces, and allows organic luminescence polymer and little molecule emitter directly not to shift with degrading. This method has also been eliminated tediously long lamination step, if set up illuminator/charge injection pattern by negative imaging, then it is essential. This method of the present invention makes manufacturing low cost, polychrome, active display become possibility. In this embodiment, the use of light emitting polymer is preferred.
In order to form the required pattern of semi-conducting material and dielectric material according to the preferred embodiments of the invention at recipient, but provide the donor element (10) of thermal imaging. Donor element comprises substrate (12), optional ejection layer (14), zone of heating (18) and comprises dielectric layer (16) and the transfer layer of semiconductor layer (15), as shown in Figure 1. Fig. 1 also shows the recipient element (20) of the adhesive layer (24) that comprises base member (22) and choose wantonly. The expose portion of transfer layer (17) is transferred on the recipient element.
Substrate (12) is for being applicable to the material of electronic device. Substrate (12) is preferably flexible and transparent, and to be conducive to exposing donor element (10) by laser emission, this further describes hereinafter. Suitable transparent membrane comprises polyester (most preferably PETG), polyether sulfone, polyvinyl chloride, polyimides, poly-(vinyl alcohol-be total to-acetal), polyethylene and cellulose esters, such as cellulose acetate.
Suitable dielectric comprises polycarboxylated styrene, polyvinylpyridine, polyvinylphenol, glass resin, fluorinated copolymers and methacrylic acid copolymer.
Suitable organic semiconducting materials comprises pentacene, six thiophene, aphthacene, poly-inferior thienyl ethenylidene, thiophene oligomers, benzothiophene dimer and polyacetylene.Suitable inorganic semiconductor material comprises ZnO
2, CdS and non-crystalline silicon.
The ejection layer also can be provided between substrate and zone of heating.Ejection layer (14) comprises having low decomposition temperature preferably less than about 275 ℃ material.The ejection layer is preferably nonmetallic.Suitable material comprises NC Nitroncellulose, polyvinyl chloride, chliorinated polyvinyl chloride, polymethyl methacrylate and polymethacrylate copolymer.The ejection layer typically is about 1 micron thickness.
Ejection layer (14) also can comprise the radiation absorbing dye that is dissolved in the low decomposition temperature adhesive.Absorbing dye absorbs the radiation in the exposure Laser emission bands of a spectrum.Typically, the radiation in the exposure Laser emission infra-red range, absorbing dye is an infrared absorbing dye.Suitable infrared absorbing dye is TIC-5c (2-[2-[2-chloro-3[[1,3-dihydro-1,3,3-trimethyl-2H-indoles-2-subunit] ethylidene]-1-cyclopentene-1-yl] vinyl]-1,3,3-trimethyl-3-H-indoles, with salt (1: 1), the CAS#128433-68-1 of trifluoromethayl sulfonic acid), can be from E.I.DuPont de Nemours, Inc. (Wilmington DE) obtains.The substituted dyes that absorbs at 830nm comprises ADS 830 (2-[2-[2-chloro-3-[2-[1,3-dihydro-1,1-dimethyl-3-(4-sulfo group butyl)-2H-benzo [e] indoles-2-subunit] ethylidene]-1-cyclohexene-1-yl] vinyl]-1,1-dimethyl-3-(4-sulfo group butyl)-1H-benzo [e] indoles, inner salt, free acid, CAS#162411-28-1); And SQS ((4-[[3-[[2,6-two (1, the 1-dimethyl ethyl)-and 4H-thiapyran-4-subunit] methyl]-2-hydroxyl-4-oxo-2-cyclobutane-1-subunit] methyl]-2,6-two (1, the 1-dimethyl ethyl)-and thiapyran, hydroxide, inner salt, CAS#88878-49-3 also can be from E.I.DuPont de Nemours, Inc. (Wilmington DE) obtains.Laser can be with other wavelength bands of a spectrum emission, so select to absorb the dyestuff of radiation in those specific wavelength bands of a spectrum.
Dielectric layer also can comprise the dyestuff of a small amount of absorption laser emission such as the dyestuff of listing above.
Can comprise also in the ejection layer (14) that foaming agent is to increase the propulsive force that produces in the ejection layer.Suitable foaming agent comprises: diazoparaffins (diazo alkyls); Diazol; Nitrine (N
3) compound; Ammonium salt; Can be decomposed to form the oxide of oxygen; Carbonate and peroxide.For example, can use diazonium compound such as 4-diazo-N, N '-diethylaniline borofluoride.Also can use the mixture of foaming agent.
Zone of heating (18) is preferably the thin metal layer that can absorb incident radiation.The preferred Ni of metal, Al, V or Cr, thickness make layer show the absorption maximum (25-35%) of incoming laser beam.The Ni layer of preferred 30-150 .
The transfer layer of semiconductor (15) and electrolyte (16) material can comprise by evaporation or be dissolved into the organic semiconducting materials that deposits on the suitable dielectric.The suitable dielectric layer of organic transistor comprises having high dielectric constant materials.The electric capacity of dielectric layer is generally at least 10
-8F/cm
2In addition, the semiconductor that dielectric layer is necessary for evaporation provides suitable interface, so that their crystallite size and corresponding field-effect mobility are big.
Recipient element (20) comprises substrate (22) and optional adhesive phase (24).Substrate (22) is the sheet material of dimensionally stable.Suitable sheet material comprises the transparent membrane of PETG, polyether sulfone, polyimides, poly-(vinyl alcohol-be total to-acetal), polyethylene or cellulose esters such as cellulose acetate.The recipient substrate also can be opaque material, as is filled with the PETG of Chinese white such as titanium dioxide; Ivory; Or synthetic paper, as Tyvek
Spunbond polyolefin.
The adhesive phase (24) of recipient element (20) can be any low Tg polymer.The suitable bonding material comprises Merlon; Polyurethane; Polyester; Polyvinyl chloride; Styrene/acrylonitrile copolymer; Poly-(caprolactone); The copolymer of vinylacetate and ethene and/or vinyl chloride; (methyl) Voncoat R 3310 (as butyl methacrylate) and copolymer; With their mixture.Also can use contact adhesive.
In the method for the invention, make the donor element (10) of Fig. 1 contact formation assembly (30) with recipient element (20).The outer surface of transfer layer (17) contacts with adhesive coating (24), if present.If adhesive coating (24) does not exist, then the outer surface of transfer layer (17) contacts recipient substrate (22).
Can use vacuum and/or pressure that donor element (10) and recipient element (20) are secured together formation assembly (30).In one embodiment, can donor element (10) and recipient element (20) be secured together by the layer at the peripheral place of fuser assembly.In another embodiment, available belt is held together donor element (10) and recipient element (20), is bonded on the imaging device then.Also can use pin/matched moulds system.In yet another embodiment, donor element can be laminated on the recipient element.If donor element (10) and recipient element (20) are flexible, then assembly (30) can be installed on the roller easily to help laser imaging.
Assembly (30) optionally is exposed to laser emission (R), the required pattern (see figure 1) of exposing patterns for forming on substrate.Laser emission or laser beam (R) are focused on the interface portion between dielectric layer (16) and the zone of heating (18).The neighbouring part of the exposed portion heating ejection layer (14) of dielectric layer (16) causes the decomposition and the evaporation of ejection layer (14), and the exposed portion that advances transfer layer (17) is to recipient.Required transfer layer (17) part of electrolyte (16) and semi-conducting material (15) therefore is transferred on the recipient element (20), stays unwanted patterns of material on substrate (12).
After the exposure, separately donor element (10) and recipient element (20) stay unwanted dielectric (16) and semiconductor (15) layer segment on substrate (12), stay the imaging moiety of transfer layer (17) on recipient element (20).Can further process the sandwich construction that obtains then and form required organic electronic device.For example, can use method of the present invention to make the OTFT of organic semiconducting materials.
Preferably apply radiation, as shown in Figure 1 by substrate element (12).About 600mJ/cm can be up to
2The laser flow under provide laser emission, preferably about 75-440mJ/cm
2Can use various types of laser instrument exposure transfer layers (17).Laser instrument is preferably launched in infrared, near-infrared or visibility region.Especially advantageously the diode laser of launching in the 750-870nm zone, reason are that their small size, low cost, stability, reliability, intensity and modulation is convenient.The diode laser of launching in the 780-850nm scope is most preferred.This laser instrument can (San Jose CA) obtains from Spectra Diode Laboratories.Also can use the laser instrument of other type and emitted laser device in other wavelength bands of a spectrum.
By the protective layer that directly is exposed to the heat that produces in the transfer process is provided, method of the present invention also can be used as the thermal imaging method that shifts the material layer that is as thin as about 100 -150 .Also transferable thicker layer (promptly greater than 150 ).
Fig. 2 has shown the side view of going up the end contact structure of the film polymer transistor of making (104) at substrate (100).Transistor (104) comprising: source electrode (112) on substrate (100) and drain electrode (114); Organic semiconducting materials (116) in source electrode (112) separately and drain electrode (114); Dielectric substance on organic semiconducting materials (18) layer forms insulating barrier; With the conductive material layer on insulating barrier (118), form gate electrode (120).
Fig. 2 has also shown the TFT (102) of top contact (bottom-gate) structure.This TFT comprises: the gate electrode (120) on substrate (100); The layer of the dielectric substance on grid layer (118); Source electrode on dielectric (112) and drain electrode (114); Semiconductor layer (116) in source electrode (112) and drain electrode (114); With other dielectric layer as encapsulated layer (119, not shown) at this.In top contact TFT structure (102), after forming required gate pattern (120), apply dielectric layer (118) by thermal imaging or alternative method, then depositing semiconductor layers (116).On the top of organic semiconducting materials (116) pattern, apply one group of source electrode (112) and drain electrode (114).In source electrode (112) and drain electrode (114), apply encapsulated layer (119).In top contact structure, second dielectric layer (encapsulated layer (119)) is as the barrier layer, and helps the transfer of semiconductor layer and degradation not.If gate electrode (118), source electrode (112) and drain electrode (114) are connected on the electromotive force, then when gate electrode (118) when being opened, electric current will flow to drain electrode (114) by organic semiconducting materials (116) from source electrode (112).
If produce by thermal imaging, then the gap between source electrode (112) and the drain electrode (114) can be as small as a pixel (5 microns).The thickness of source electrode (112) and drain electrode (114) can be about 100 to about 10000 .The thickness of dielectric layer (118) can be about 100 to about 15000 .If by the thermal evaporation deposition, the thickness of semiconductor layer (116) can be about 50 to about 2000 , if from solution-cast, then is up to 10000 .In end contact TFT, in source electrode (112) and drain electrode (114), apply organic semiconductor and pattern of dielectric material.
Can use method of the present invention to make the polymer light-emitting display.Fig. 3 has shown the side view of PLED.Flexible substrate (200) scribbles ITO, and it constitutes the positive pole (201) of display.Apply electric charge injection layer (202) and light emitting polymer (203) atop.
Embodiment
Non-limiting example has illustrated the method for thin electrolyte of the transfer of this paper requirement and description and semiconductor layer.Following amount provides with wt%.The CREO unit comprises that 81.2cm is long, the roller of girth 91cm.CREO 3244 Spectrum Trendsetter Exposure Unit (can be from Creo-Scitex, Inc., Vancouver, Canada obtains) and comprising the outer diode laser of 20 tile reds, it launches the laser beam of 830nm when 1 microsecond pulse width.Cut apart the array that laser beam forms 240 5 microns overlapping * 2 microns hot spots by light valve.GMA is a glycidyl methacrylate; MMA is a methyl methacrylate; BA is a butyl acrylate; With MMA be methacrylic acid.
Embodiment 1
Use four donor elements to print the TFT of the end contact structure of describing in the following examples by thermal imaging.Each of donor element comprises the thick Mylar of 4 mils (0.0363mm)
Substrate, the 400D optical clarity can be from E.I.DuPont de Nemours, and (Wilmington DE) obtains Inc., is coated with extremely about 40% light transmittance of 100 nickel by electron beam deposition.
According to the polyaniline (PANI) of the process of describing among the US5863465 by the emulsion polymerization prepared use.Use dinonylnaphthalene sulfonic acid (DNNSA) as adulterant.Doped P ANI is called as PANI-DNNSA hereinafter.The adding of control DNNSA makes the sulphur atom molal quantity of acid equal the molal quantity of nitrogen-atoms in the PANI skeleton.This confirms by elementary analysis behind washing, separation and the dry PANI-DNNSA that obtains.Utilize following processes to use the audio frequency Dukane ultrasonoscope that has horn probe that CNT is dispersed among the PANI-DNNSA.Hybrid laser CNT in 2 ounces of bottles, 59mg, (CNI, Houston is TX) with 19.03g dimethylbenzene.With the horn probe dispersed mixture that is immersed in certain depth in the mixture 10 minutes, thereby observe stable mixing eddy current.In nanotube/xylene mixture, add PANI-DNNSA (5.9g, in dimethylbenzene, 32.9% solid).The mixture that obtains disperseed 5 minutes again, and twice in vibration bottle is so that wash CNT from bottle wall upper punch therebetween.Use a #10Meyer rod that DNNSA-PANI/SWNT solution is coated on the electron beam deposition Ni layer to 1.2 micron thickness.Dry rear film comprises the NT of 3wt% and the polyaniline of 97wt%.The DNNSA-PANI/SWNT donor element is used for print gates and source electrode and drain electrode.
By being coated with on the Mylar film of Ni the donor element that coating polyvinyl pyrelene to 1.1 micron thickness prepares dielectric-semiconductor layer.(Sigma-Aldrich, Milwaukee WI) are evaporated on dielectric-semiconductor layer with pentacene to use Kurt Lesker evaporimeter then.Pentacene thin film is 6 " * 6 " the zone at room temperature be evaporated with the speed of 0.3 .The thickness of pentacene layer is 250 , and this uses quartz crystal to record.By following printing 3 " * 3 " base plate.
DNNSA-PANI/SWNT donor element and recipient element are loaded on the CREO3244 spectrum Trendsetter Exposure Unit.The recipient element is the 4 mil Mylar films that scribble 1.4 micron films, and 1.4 micron films are obtained by GMA 2%/MMA51%/BA 40%/MMA 3% latex (solid of 33wt%), and glass transition temperature is 39 ℃.
Printing source electrode and drain electrode layer under 3.45 watts laser flow, roller speed remains on 100RPM.Laser beam is focused between nickel dam and the DNNSA-PANI/SWNT at the interface.Nickel absorbs the laser beam of incident, makes at its organic matter at the interface and partly decomposes, and gaseous decomposition product advances the exposed portion of DNNSA-PANI/SWNT conductive layer to the recipient element.After the formation of source electrode and drain electrode is finished, semiconductor-dielectric alms giver is loaded on 3244 Trendsetter that replace the DNNSA-PANI/SWNT donor element.Semiconductor-dielectric donor element is exposed under 7 watts.After removing the donor element different, keep being registrated to pixel level with reorientation.Because the glass transition point of coating is low on the recipient element, so it is for the transfer of semiconductor surface and to be attached on the recipient element be enough to glue.
At last, use DNNSA-PANI/SWNT donor element print gates on the dielectric layer top of shifting of before in the printing of source electrode and drain electrode, describing.Grid layer is 3.6 watts of exposures down.
The IV characteristic of a printed transistor is shown in Fig. 4, and grid voltage is from 0 to 100V, and Vsd is in same scope.The scintigram of printed transistor also is shown in Fig. 5.
Claims (28)
1. method comprises:
A. form donor element, this donor element comprises:
I. substrate; With
Ii. transfer layer, wherein transfer layer comprises fragility or thermo-sensitive material, and the protective layer between substrate and fragility or heat-sensitive layer;
B. the transfer layer of placing donor element contacts with the recipient element; With
C. the selection zone that exposes donor element forms sandwich construction just as, patterning to laser emission to the recipient element to shift the part transfer layer.
2. the process of claim 1 wherein that donor element also comprises the ejection layer between transfer layer and substrate.
3. the method for claim 2 wherein sprays layer and comprises that decomposition temperature is lower than 275 ℃ organic material.
4. the method for claim 3 wherein sprays layer and is selected from NC Nitroncellulose, polyvinyl chloride, chliorinated polyvinyl chloride, polymethyl methacrylate and polymethyl methacrylate copolymer.
5. the method for claim 2 wherein sprays layer and also comprises the radiation absorbing dye.
6. the method for claim 5, wherein the radiation absorbing dye is an infrared absorbing dye.
7. the method for claim 6, wherein infrared absorbing dye is selected from 2-[2-[2-chloro-3-[(1,3-dihydro-1,3,3-trimethyl-2H-indoles-2-subunit) ethylidene]-1-cyclopentene-1-yl] vinyl]-1,3,3-trimethyl-3-H-indoles, with the salt (1: 1) of trifluoromethayl sulfonic acid; 2-[2-[2-chloro-3-[[1,3-dihydro-1,1-dimethyl-3-(4-sulfo group butyl)-2H-benzo [e] indoles-2-subunit] ethylidene]-1-cyclohexene-1-yl] vinyl]-1,1-dimethyl-3-(4-sulfo group butyl)-1H-benzo [e] indoles, inner salt, free acid; And 4-[[3-[[2, two (1, the 1-the dimethyl ethyl)-4H-thiapyran-4-subunits of 6-] methyl]-2-hydroxyl-4-oxo-2-cyclobutane-1-subunit] methyl]-2, two (1, the 1-the dimethyl ethyl)-thiapyrans of 6-, inner salt.
8. the process of claim 1 wherein that the substrate of donor element is a fexible film.
9. the method for claim 8, wherein fexible film comprises the polymer that is selected from polyester, polyether sulfone, polyvinyl chloride, polyimides, poly-(vinyl alcohol-altogether-acetal), polyethylene and cellulose esters.
10. the process of claim 1 wherein that fragility or thermo-sensitive material include dynamo-electric activated material.
11. the method for claim 10, wherein organic electric activating material comprise luminescence polymer material or luminous little molecule, protective layer comprises electric charge injection layer, and the recipient element comprises substrate and anode layer.
12. the method for claim 11, wherein anode layer comprises indium tin oxide target.
13. the polymer LED of making according to the method for claim 12.
14. the fragility of the process of claim 1 wherein or thermo-sensitive material comprise organic or inorganic semiconductor, protective layer comprises dielectric substance.
15. the method for claim 14, wherein organic semiconductor is selected from pentacene, six thiophene, aphthacene, poly-inferior thienyl ethenylidene, thiophene oligomers, benzothiophene dimer and polyacetylene.
16. the method for claim 14, wherein dielectric substance is selected from polycarboxylated styrene, polyvinylphenol, polyvinylpyridine, glass resin, fluorinated copolymers and methacrylic acid copolymer.
17. the method for claim 14, wherein the recipient element comprises the conductive layer of substrate and patterning.
18. the method for claim 17, wherein the substrate of recipient element comprises mineral-filled polyester, ivory or spunbond polyolefin.
19. the method for claim 14, wherein the recipient element also comprises adhesive phase.
20. the method for claim 19, wherein adhesive phase comprises and is selected from Merlon; Polyurethane; Polyester; Polyvinyl chloride; Styrene/acrylonitrile copolymer; Poly-(caprolactone); At least a copolymer in vinylacetate and ethene and the vinyl chloride; (methyl) Voncoat R 3310; (methyl) acrylate copolymer; With their polymer of mixture.
21. the method for claim 14, wherein donor element also comprises the ejection layer between transfer layer and substrate.
22. the method for claim 14, wherein donor element also comprises zone of heating between substrate and transfer layer.
23. the method for claim 22, wherein zone of heating comprises the thin layer of Ni, Al or Cr.
24. the method for claim 17, wherein the conductive layer of patterning comprises transistorized source electrode and drain electrode.
25. the method for claim 24, wherein the conductive layer of patterning also comprises interior connection.
26. but the donor element of a thermal imaging comprises:
A. substrate;
B. zone of heating;
C. protective layer; With
D. fragility or heat-sensitive layer.
But 27. the thermal imaging donor element of claim 26, wherein:
Substrate is a fexible film, and fexible film comprises the polymer that is selected from polyester, polyether sulfone, polyvinyl chloride, polyimides, poly-(vinyl alcohol-be total to-acetal), polyethylene and cellulose esters;
Zone of heating comprises the thin layer of Ni, Al or Cr;
Protective layer comprises dielectric substance or electric charge injection material; With
Fragility or heat-sensitive layer comprise organic semiconductor or light emitting polymer or luminous little molecule.
28. the donor element of claim 27 wherein deposits fragility or heat-sensitive layer by evaporation or from solution-cast at protective layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45805803P | 2003-03-27 | 2003-03-27 | |
US60/458,058 | 2003-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1764551A true CN1764551A (en) | 2006-04-26 |
Family
ID=33131744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800083329A Pending CN1764551A (en) | 2003-03-27 | 2004-03-25 | Shift method and the donor element of thermo-sensitive material to substrate |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1606120A1 (en) |
JP (1) | JP2006524916A (en) |
KR (1) | KR20050109604A (en) |
CN (1) | CN1764551A (en) |
TW (1) | TW200508049A (en) |
WO (1) | WO2004087434A1 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100557842C (en) | 2004-11-01 | 2009-11-04 | 毫微纤维公司 | Organic nanofibers soft lift-off |
US7408187B2 (en) | 2004-11-19 | 2008-08-05 | Massachusetts Institute Of Technology | Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process |
JP4945899B2 (en) * | 2005-01-05 | 2012-06-06 | コニカミノルタホールディングス株式会社 | Organic thin film transistor and manufacturing method thereof |
US20060188721A1 (en) * | 2005-02-22 | 2006-08-24 | Eastman Kodak Company | Adhesive transfer method of carbon nanotube layer |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
JP4856900B2 (en) * | 2005-06-13 | 2012-01-18 | パナソニック株式会社 | Method for manufacturing field effect transistor |
KR101223718B1 (en) * | 2005-06-18 | 2013-01-18 | 삼성디스플레이 주식회사 | Method for patterning nano conductive film |
KR101174871B1 (en) * | 2005-06-18 | 2012-08-17 | 삼성디스플레이 주식회사 | Patterning method for organic semiconductor |
FR2894514B1 (en) * | 2005-12-08 | 2008-02-15 | Essilor Int | METHOD OF TRANSFERRING A MICRONIC PATTERN TO AN OPTICAL ARTICLE AND OPTICAL ARTICLE THUS OBTAINED |
US7528448B2 (en) * | 2006-07-17 | 2009-05-05 | E.I. Du Pont De Nemours And Company | Thin film transistor comprising novel conductor and dielectric compositions |
US7582403B2 (en) | 2006-07-17 | 2009-09-01 | E. I. Du Pont De Nemours And Company | Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom |
US7744717B2 (en) * | 2006-07-17 | 2010-06-29 | E. I. Du Pont De Nemours And Company | Process for enhancing the resolution of a thermally transferred pattern |
US7651896B2 (en) | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5216276B2 (en) * | 2006-08-30 | 2013-06-19 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
KR20100016643A (en) | 2007-04-19 | 2010-02-12 | 바스프 에스이 | Method for forming a pattern on a substrate and electronic device formed thereby |
GB2453766A (en) | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
KR20090111091A (en) * | 2008-04-21 | 2009-10-26 | (주)모디스텍 | Conductive film structure and patterning method |
GB2462591B (en) * | 2008-08-05 | 2013-04-03 | Cambridge Display Tech Ltd | Organic thin film transistors and methods of making the same |
JP5446434B2 (en) * | 2009-04-30 | 2014-03-19 | Jsr株式会社 | Curable composition for nanoimprint lithography and nanoimprint method |
JP5990121B2 (en) * | 2013-03-19 | 2016-09-07 | 富士フイルム株式会社 | Method for manufacturing organic semiconductor element |
KR102480950B1 (en) * | 2014-12-24 | 2022-12-23 | 올싸거널 인코포레이티드 | Photolithographic patterning of electronic devices |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2083726A (en) | 1980-09-09 | 1982-03-24 | Minnesota Mining & Mfg | Preparation of multi-colour prints by laser irradiation and materials for use therein |
US4942141A (en) | 1989-06-16 | 1990-07-17 | Eastman Kodak Company | Infrared absorbing squarylium dyes for dye-donor element used in laser-induced thermal dye transfer |
US4948776A (en) | 1989-06-16 | 1990-08-14 | Eastman Kodak Company | Infrared absorbing chalcogenopyrylo-arylidene dyes for dye-donor element used in laser-induced thermal dye transfer |
US5019549A (en) | 1990-10-25 | 1991-05-28 | Kellogg Reid E | Donor element for thermal imaging containing infra-red absorbing squarylium compound |
JP3899566B2 (en) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | Manufacturing method of organic EL display device |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
GB9803763D0 (en) | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
GB9813326D0 (en) | 1998-06-19 | 1998-08-19 | Cambridge Display Tech Ltd | Backlit displays |
US6355598B1 (en) * | 1998-09-24 | 2002-03-12 | Dai Nippon Printing Co., Ltd. | Thermal transfer sheet, thermal transfer recording method, thermal transfer recording system, resonance circuit and process for producing the same |
US6358664B1 (en) * | 2000-09-15 | 2002-03-19 | 3M Innovative Properties Company | Electronically active primer layers for thermal patterning of materials for electronic devices |
US20020158574A1 (en) * | 2001-04-27 | 2002-10-31 | 3M Innovative Properties Company | Organic displays and devices containing oriented electronically active layers |
-
2004
- 2004-03-25 JP JP2006509301A patent/JP2006524916A/en active Pending
- 2004-03-25 CN CNA2004800083329A patent/CN1764551A/en active Pending
- 2004-03-25 KR KR1020057018045A patent/KR20050109604A/en not_active Application Discontinuation
- 2004-03-25 WO PCT/US2004/009187 patent/WO2004087434A1/en not_active Application Discontinuation
- 2004-03-25 EP EP04758354A patent/EP1606120A1/en not_active Withdrawn
- 2004-03-26 TW TW093108334A patent/TW200508049A/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP1606120A1 (en) | 2005-12-21 |
TW200508049A (en) | 2005-03-01 |
JP2006524916A (en) | 2006-11-02 |
WO2004087434A1 (en) | 2004-10-14 |
KR20050109604A (en) | 2005-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1764551A (en) | Shift method and the donor element of thermo-sensitive material to substrate | |
US7518140B2 (en) | Flat panel display and method of fabricating the same | |
JP5410475B2 (en) | Thin film transistor (TFT) array manufacturing method | |
CN1292496C (en) | Laser parrering of devices | |
CN102017209B (en) | Organic thin film transistors and manufacturing method | |
CN1494485A (en) | Thermal imaging processes and products of electroactive organic material | |
CN1838843A (en) | Methods for fabricating patterned organic electroluminescent devices | |
KR101052578B1 (en) | Organic Transistors, Organic Transistor Arrays and Display Devices | |
TW200303152A (en) | Method and materials for transferring a material onto a plasma treated surface according to a pattern | |
EP1866966A1 (en) | Methods of making displays | |
CN1832220A (en) | Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and display device employing the same | |
CN1874023A (en) | Organic thin film transistor and manufacture method thereof and plate displayer | |
CN1893108B (en) | Flat panel display and method of fabricating the same | |
CN1881644A (en) | Method of forming organic semiconductor layer pattern | |
WO2015041053A1 (en) | Method for manufacturing organic light-emitting element and method for manufacturing display device | |
JP2014123746A (en) | Organic thin-film transistor | |
US20080258138A1 (en) | Thin film transistor array panel and fabricating method thereof, and flat panel display with the same | |
CN1813362A (en) | Methods for forming patterns on a filled dielectric material on substrates | |
CN1905139A (en) | Method for forming a thin-film transistor | |
CN100576987C (en) | Thermal transfer element | |
KR20060089838A (en) | Donor film for thin film transfer | |
US7316874B2 (en) | Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging | |
JP2008066439A (en) | Method of manufacturing organic thin film transistor | |
JP2018041759A (en) | Thin-film transistor and image display device | |
JP2006261535A (en) | Lamination structure, electronic element using the same, electronic element array using electronic element, manufacturing method of lamination structure, and manufacturing method of electronic element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |