TW200508049A - Processes and donor elements for transferring thermally sensitive materials to substrates by thermal imaging - Google Patents

Processes and donor elements for transferring thermally sensitive materials to substrates by thermal imaging

Info

Publication number
TW200508049A
TW200508049A TW093108334A TW93108334A TW200508049A TW 200508049 A TW200508049 A TW 200508049A TW 093108334 A TW093108334 A TW 093108334A TW 93108334 A TW93108334 A TW 93108334A TW 200508049 A TW200508049 A TW 200508049A
Authority
TW
Taiwan
Prior art keywords
processes
donor
donor elements
semiconductive
disclosed
Prior art date
Application number
TW093108334A
Other languages
Chinese (zh)
Inventor
Graciela Beatriz Blanchet-Fincher
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200508049A publication Critical patent/TW200508049A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
    • B41M5/42—Intermediate, backcoat, or covering layers
    • B41M5/44—Intermediate, backcoat, or covering layers characterised by the macromolecular compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382—Contact thermal transfer or sublimation processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382—Contact thermal transfer or sublimation processes
    • B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
    • B41M5/38214—Structural details, e.g. multilayer systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
    • B41M2205/30—Thermal donors, e.g. thermal ribbons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
    • B41M5/42—Intermediate, backcoat, or covering layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Methods of forming a patterned semiconducting-dielectric material on a substrate by thermal processes are disclosed, comprising heating a thermally imageable donor element comprising a substrate and a transfer layer of semiconductive material in conjunction with a dielectric. The donor is exposed with the positive image of the desired pattern to be formed on the receiver, such that the exposed portions of the layer of semiconductive and dielectric material are simultaneously transferred, forming the desired pattern of semiconductive and dielectric material on the receiver. The semiconducting material can be patterned to form a thin film transistor. The method can also be used to pattern a light-emitting polymer or small molecule in conjunction with the charge injection layer to form the light-emitting display for light-sensitive organic electronic devices, Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the processes, are also disclosed.
TW093108334A 2003-03-27 2004-03-26 Processes and donor elements for transferring thermally sensitive materials to substrates by thermal imaging TW200508049A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45805803P 2003-03-27 2003-03-27

Publications (1)

Publication Number Publication Date
TW200508049A true TW200508049A (en) 2005-03-01

Family

ID=33131744

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108334A TW200508049A (en) 2003-03-27 2004-03-26 Processes and donor elements for transferring thermally sensitive materials to substrates by thermal imaging

Country Status (6)

Country Link
EP (1) EP1606120A1 (en)
JP (1) JP2006524916A (en)
KR (1) KR20050109604A (en)
CN (1) CN1764551A (en)
TW (1) TW200508049A (en)
WO (1) WO2004087434A1 (en)

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CN100557842C (en) 2004-11-01 2009-11-04 毫微纤维公司 Organic nanofibers soft lift-off
US7408187B2 (en) 2004-11-19 2008-08-05 Massachusetts Institute Of Technology Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process
JP4945899B2 (en) * 2005-01-05 2012-06-06 コニカミノルタホールディングス株式会社 Organic thin film transistor and manufacturing method thereof
US20060188721A1 (en) * 2005-02-22 2006-08-24 Eastman Kodak Company Adhesive transfer method of carbon nanotube layer
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
JP4856900B2 (en) * 2005-06-13 2012-01-18 パナソニック株式会社 Method for manufacturing field effect transistor
KR101223718B1 (en) * 2005-06-18 2013-01-18 삼성디스플레이 주식회사 Method for patterning nano conductive film
KR101174871B1 (en) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 Patterning method for organic semiconductor
FR2894514B1 (en) * 2005-12-08 2008-02-15 Essilor Int METHOD OF TRANSFERRING A MICRONIC PATTERN TO AN OPTICAL ARTICLE AND OPTICAL ARTICLE THUS OBTAINED
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US7582403B2 (en) 2006-07-17 2009-09-01 E. I. Du Pont De Nemours And Company Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom
US7744717B2 (en) * 2006-07-17 2010-06-29 E. I. Du Pont De Nemours And Company Process for enhancing the resolution of a thermally transferred pattern
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5216276B2 (en) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20100016643A (en) 2007-04-19 2010-02-12 바스프 에스이 Method for forming a pattern on a substrate and electronic device formed thereby
GB2453766A (en) 2007-10-18 2009-04-22 Novalia Ltd Method of fabricating an electronic device
KR20090111091A (en) * 2008-04-21 2009-10-26 (주)모디스텍 Conductive film structure and patterning method
GB2462591B (en) * 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same
JP5446434B2 (en) * 2009-04-30 2014-03-19 Ｊｓｒ株式会社 Curable composition for nanoimprint lithography and nanoimprint method
JP5990121B2 (en) * 2013-03-19 2016-09-07 富士フイルム株式会社 Method for manufacturing organic semiconductor element
KR102480950B1 (en) * 2014-12-24 2022-12-23 올싸거널 인코포레이티드 Photolithographic patterning of electronic devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2083726A (en) 1980-09-09 1982-03-24 Minnesota Mining & Mfg Preparation of multi-colour prints by laser irradiation and materials for use therein
US4942141A (en) 1989-06-16 1990-07-17 Eastman Kodak Company Infrared absorbing squarylium dyes for dye-donor element used in laser-induced thermal dye transfer
US4948776A (en) 1989-06-16 1990-08-14 Eastman Kodak Company Infrared absorbing chalcogenopyrylo-arylidene dyes for dye-donor element used in laser-induced thermal dye transfer
US5019549A (en) 1990-10-25 1991-05-28 Kellogg Reid E Donor element for thermal imaging containing infra-red absorbing squarylium compound
JP3899566B2 (en) 1996-11-25 2007-03-28 セイコーエプソン株式会社 Manufacturing method of organic EL display device
US6087196A (en) 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
GB9803763D0 (en) 1998-02-23 1998-04-15 Cambridge Display Tech Ltd Display devices
GB9813326D0 (en) 1998-06-19 1998-08-19 Cambridge Display Tech Ltd Backlit displays
US6355598B1 (en) * 1998-09-24 2002-03-12 Dai Nippon Printing Co., Ltd. Thermal transfer sheet, thermal transfer recording method, thermal transfer recording system, resonance circuit and process for producing the same
US6358664B1 (en) * 2000-09-15 2002-03-19 3M Innovative Properties Company Electronically active primer layers for thermal patterning of materials for electronic devices
US20020158574A1 (en) * 2001-04-27 2002-10-31 3M Innovative Properties Company Organic displays and devices containing oriented electronically active layers

Also Published As

Publication number Publication date
EP1606120A1 (en) 2005-12-21
JP2006524916A (en) 2006-11-02
WO2004087434A1 (en) 2004-10-14
CN1764551A (en) 2006-04-26
KR20050109604A (en) 2005-11-21

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