CN1757699A - 减少微擦痕且利于金属氧化物的去除的金属cmp浆料组合物 - Google Patents
减少微擦痕且利于金属氧化物的去除的金属cmp浆料组合物 Download PDFInfo
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Abstract
本发明提供了一种具有较低化学蚀刻速率和较高机械抛光速率的金属CMP浆料组合物。通过使用较高的机械研磨剂浓度(例如≥8重量%),并结合足够量的湿润剂,可以实现较高的机械抛光速率,并抑制所抛光的下伏面(例如绝缘层、导电线路等)的微擦痕。所述浆料组合物还包括高度稳定的金属丙二胺四乙酸(M-PDTA)络合物,其可用于抑制金属氧化物重新粘附到所抛光的金属表面上和/或通过与金属表面螯合而抑制金属表面的氧化。
Description
作为参考的优先申请
本申请是2004年1月30日递交的美国申请10/485,500的部分继续申请(CIP),所述美国申请是于2002年8月6日递交的PCT/KR02/01492的371专利申请,其优选权源于2001年8月9日递交的韩国专利申请2001-47895和2002年3月21日递交的韩国专利申请2002-28052,这些专利申请引入本文作为参考。
技术领域
本发明涉及形成集成电路器件的方法,更具体地说涉及使用化学-机械抛光技术抛光集成电路衬底上的金属层的方法。
背景技术
集成电路芯片经常使用多层的图案化金属化层(metallization)以及大量的导电线路(vias),从而在包埋在集成电路衬底(例如半导体衬底)内的电学器件之间提供引线互连。在典型的情况中,导电线路可以垂直通过一个或者多个绝缘层延伸,从而在下层和上层金属层之间提供“短路”。如图1A-1C所示,一种形成导电线路的常规技术包括在半导体衬底10的表面上形成电绝缘层12(例如SiO2),其中在所述衬底内具有多个邻近表面延伸的活性区(未显示)。然后,使用常规技术来形成多个透过电绝缘层12延伸并曝露各活性区(例如N或P型扩散区)的接触孔16。然后,在电绝缘层12的上表面上保形地(conformally)沉积金属层14(例如钨(W)层)并且使其进入接触孔16中。如图所示,具有能完全填充接触孔16的足够厚度的所述金属层14仍然可能包括多个冶金接缝18,其中金属层14的两个相对表面在接触孔16中彼此接触。甚至在接触孔16中不存在金属空隙的情况下也会存在这些接缝18。
如图1B所示,可以除去保留在电绝缘层12上表面上的一部分金属层14,从而形成多个导电线路20。所述去除步骤包括用抛光浆料抛光金属层14。为了曝露出电绝缘层12的上表面,可以实施足够长时间的抛光步骤。在某些情况中,抛光步骤可能导致在导电线路20内形成构成伴生空隙的裂缝18’。裂缝18’的形成是在抛光步骤期间使用包含侵蚀性蚀刻金属层14的化学蚀刻剂的抛光浆料的结果。在抛光浆料内使用侵蚀性化学蚀刻剂还可能导致导电线路上表面的过度的深腐蚀(etch-back)(即凹陷),如图1C所示。即使在检测到电绝缘层12上表面曝露后,立即紧随抛光步骤进行彻底的清洗步骤,仍可能发生过度的深腐蚀。发生导电线路20的过度深腐蚀可能导致电绝缘层12上表面和导电线路20上表面之间的不平整,并因此使进一步的后续加工步骤复杂化。
授予Grumbine等的美国专利6,068,787公开了一种在据称高的化学蚀刻速率下对金属层进行化学-机械抛光的技术。’787专利声称可以向已知的催化剂(例如过氧化氢)中添加催化量的硝酸铁(一种已知的氧化剂),从而在CMP浆料中实现协同作用,对于钨金属层,这会导致高的化学蚀刻速率和高的整体抛光速率。授予Hata的美国专利5,948,697也公开了使用铁作为催化剂来加速CMP抛光。授予Guthrie等的美国专利5,709,593也公开了使用包含反应试剂、研磨剂和催化剂的浆料抛光金属、半导体和绝缘层。不幸地是,具有高化学蚀刻速率的CMP浆料易于引起上述图1A至1C所示的过度的深腐蚀。
S.Basak等的文献,标题为“Electrochemical Aspects of theChemical Mechanical Planarization of Tungsten”,Proceeding of the FirstInternational Symposium on Chemical Mechanical Planarization,Electrochemical Society,第96-22卷,第137-148页,也公开了在CMP浆料中过氧化氢和硝酸铁结合使用。标题为“Chemical-MechanicalPlanarization of Semiconductor Materials”,ISBN 3-540-43181-0,Springer-Verlag(2004)的M.R.Oliver(编)的教科书中7.3.3部分和表7.1中也公开了在CMP浆料中使用硝酸铁和其它添加剂(例如络合剂)。在CMP浆料中使用硝酸铁的一个缺点是在氧化期间产生游离的Fe离子,在抛光和正常清洗后它们会在平面化的表面上形成污染物残留。如授予Schonauer等的美国专利5,662,769所述,可以使用例如EDTA的配体从半导体表面上除去这些游离的金属离子,EDTA与金属离子形成高度稳定的络合物,从而抑制这些游离的金属离子在平面化的表面上沉积。
具有较高浓度研磨剂的浆料也被用来增加整体的CMP抛光速率。但是,这种高浓度的研磨剂会在平面化的表面上导致高水平的微擦痕和其它缺陷。为了解决这种问题,已经开发了不需要研磨剂的其它CMP技术,例如授予Lee等的美国专利申请2002/0061635中公开的那些技术。
发明内容
本发明的实施方案包括用于半导体片加工的金属CMP浆料前体组合物。这些浆料前体组合物可以与适当的氧化剂(例如过氧化氢)混合,形成具有较低化学蚀刻速率和较高机械抛光速率特性的金属CMP浆料组合物。使用较高的机械研磨剂浓度(例如≥8重量%)可以实现较高的机械抛光速率,并结合足够量的湿润剂,从而抑制被抛光的下伏面(underlying surface)(例如绝缘层、导电线路等)的微擦痕。所述浆料前体组合物还包括高度稳定的金属丙二胺四乙酸(M-PDTA)络合物,其可以促进抑制金属氧化物重新粘附到所抛光的金属表面上和/或通过与金属表面螯合而限制金属表面氧化的最大速率。
具体地说,本发明的一些实施方案包括用于对半导体衬底上的金属层进行化学-机械抛光的浆料前体组合物。所述浆料前体组合物包括至少一种pH控制剂、羧酸、研磨剂、金属丙二胺四乙酸(M-PDTA)络合物、湿润剂和去离子水的含水混合物。所述pH控制剂可以包括无机酸和氢氧化物中的至少一种,并且所述湿润剂可以是二甘醇。所述含水混合物中的湿润剂的量典型地在从约0.4重量%至约1.2重量%的范围内。为了实现较高的机械抛光速率,所述含水混合物中研磨剂的量优选超过约8重量%,并且更优选在从约10重量%至约12重量%的范围内。M-PDTA络合物可以是Fe-PDTA络合物,并且所述含水混合物中Fe-PDTA络合物的量可以在从约0.1重量%至约0.8重量%的范围内。
本发明的其它实施方案包括在半导体衬底上用于对钨(W)金属层进行化学-机械抛光的浆料组合物。这些浆料组合物包括含有过氧化氢、氢氧化钾、硝酸和马来酸的含水混合物。马来酸的用量在从约0.4重量%至约0.8重量%的范围内。所述混合物还包含用量大于等于8重量%的二氧化硅研磨剂、用量为约0.1重量%至约0.8重量%的Fe-PDTA络合物,用量为约0.4重量%至约1.2重量%的二甘醇、以及去离子水。
本发明再进一步的实施方案包括通过在半导体片的表面上形成电绝缘层,并在电绝缘层上形成多个接触孔而形成集成电路器件的方法。将钨金属层保形地沉积到电绝缘层上并进入多个接触孔中。然后实施化学-机械抛光步骤。所述抛光步骤包括使用浆料组合物抛光钨金属层,所述组合物包含过氧化氢、用量大于等于8重量%的研磨剂、用量为约0.1重量%至约0.8重量%的Fe-PDTA络合物、用量为约0.4重量%至约1.2重量%的湿润剂、以及去离子水。在抛光步骤之后,将电绝缘层曝露于清洗溶液中,并且实施其它的后续加工步骤,以制备半导体片。然后,将半导体片切成多个可以单独封装的半导体芯片。
附图说明
图1A至1C是举例说明使用化学-机械抛光技术在半导体衬底上形成导电线路的常规方法的中间结构的剖视图。
图2是举例说明根据本发明实施方案的集成电路器件形成方法的流程图。
具体实施方式
下面将参照附图更详细地说明本发明,在附图中表示了本发明优选的实施方案。但是,本发明可以以许多不同的形式来实现,并且不应解释为局限于本文中提供的实施方案,之所以提供这些实施方案是为了使本发明的公开更彻底和完全,并由此使本领域技术人员了解本发明的范围。整个说明书中,相同的附图标记指相同的元件。
本发明的实施方案包括用于半导体片加工的金属CMP浆料前体组合物。如图2所示,形成集成电路器件的方法200可以包括至少一个在半导体片加工过程期间实施的化学-机械抛光步骤210。优选的浆料前体组合物可以与适当的氧化剂(例如过氧化氢)在抛光时混合,从而获得具有较低化学蚀刻速率和较高机械抛光速率特性的金属CMP浆料组合物。使用较高的机械研磨剂浓度(例如≥8重量%),结合足够量的湿润剂(例如二甘醇)可以实现较高的机械抛光速率,从而抑制抛光的下伏面(例如绝缘层、导电线路)的微擦痕。浆料前体组合物还包括高度稳定的金属丙二胺四乙酸(M-PDTA)络合物,其可以用于抑制金属氧化物重新粘附到所抛光的金属表面上和/或通过与金属表面螯合而限制金属表面氧化的最大速率。优选的M-PDTA络合物是Fe-PDTA络合物。所述M-PDTA还可以用于抑制高浓度研磨剂的聚沉。
具体地说,图2的方法200包括在半导体片上形成电绝缘层的步骤,方框202。所述电绝缘层可以直接在半导体片的表面上形成,或者在位于层间介电层和半导体片表面之间的一层或多层下伏层上作为层间介电层来形成。电绝缘层中可以形成多个接触孔,方框204。这些接触孔可以使用常规的光刻图案和蚀刻步骤来形成。然后,在电绝缘层的上表面上并且沿接触孔的侧壁(和底部)保形地沉积任选的阻挡层(barrier layer)(例如Ti/TiN),方框206。此后,在电绝缘层上面沉积金属层,例如钨(W)金属层,方框208。所述金属层的厚度足以填充接触孔。
如方框210所示,然后,使用本文所述的浆料组合物在金属层和阻挡层上实施化学-机械抛光(CMP)步骤。该步骤的持续时间足以曝露电绝缘层的上表面并且在接触孔内形成多个钨基导电线路。这些导电线路的上表面与电绝缘层曝露的上表面处于同一平面。为了抑制接触孔内导电线路的凹陷(recession),在检测到抛光步骤终点之后,立即进行晶片清洗步骤,从所述晶片的平整表面上除去浆料组合物和污染物。然后,实施常规步骤,沉积并图案化金属垫层,以形成多个在电绝缘层的平整上表面上延伸的电学互连(electrical interconnects),方框212-214。在形成电学互连后可以进行其它的加工步骤,包括其它的绝缘体沉积和CMP抛光步骤。还可以实施其它的后续晶片加工和钝化步骤,方框216-218。此后,半导体片可以被切成多个可以作为独立的集成电路器件单独封装的半导体芯片,方框220。
CMP抛光步骤,方框210,包括混合浆料前体组合物和至少一种氧化剂。优选的氧化剂是过氧化氢(H2O2)。如同在普通转让的美国申请10/485,500(该申请引入本文作为参考)中所解释的,在可选的浆料组合物中还可以使用过氧化氢以外的氧化剂。所述浆料前体组合物包括至少一种pH控制剂、羧酸(例如马来酸)、研磨剂(例如二氧化硅)、金属丙二胺四乙酸(M-PDTA)络合物、在高含量研磨剂存在下抑制微擦痕的湿润剂以及去离子水的含水混合物。所述pH控制剂可以包括至少一种无机酸(例如硝酸)和氢氧化物(氢氧化钾),并且所述湿润剂可以是二甘醇(DEG)。可以使用足够量的pH控制剂,以便在25℃温度下将浆料组合物的pH控制在从约2.4至约2.7的范围内。
所述含水混合物中的湿润剂的量典型地在从约0.4重量%至约1.2重量%的范围内,更优选为约0.8重量%。为了实现较高的机械抛光速率,所述含水混合物中的研磨剂的量优选超过约8重量%,并且更优选在从约10重量%至约12重量%的范围内(或者更高)。所述研磨剂可以是平均粒径在从约140纳米至约180纳米范围内的二氧化硅。M-PDTA络合物可以是Fe-PDTA络合物,并且所述含水混合物中的Fe-PDTA络合物的量可以在从约0.1重量%至约0.8重量%的范围内。在抛光时,以约2重量%的浓度添加过氧化氢可以实现约2400-2600/min的较高整体抛光速率,以及仅约12/min的较低静态化学蚀刻速率(在没有机械抛光的情况下)。所述较低的静态化学蚀刻速率有利地限制了抛光步骤完成之后接触孔内钨线路的凹陷。在一些实施方案中,可以选择浆料组合物组分的浓度,从而将静态化学蚀刻速率限制在从约5/min至约15/min的范围内。如上述’500申请的表2中所述,所述静态化学蚀刻速率(也称作腐蚀速率)的范围大大低于使用硝酸铁作为氧化剂的常规浆料组合物。
在附图和说明书中,已经公开了本发明典型的优选实施方案,它们仅是在一般和说明性意义上使用,并且不是出于限制的目的,本发明的范围在下面的权利要求中给出。
实施例
实施例1
抛光性能随湿润剂的量而变化
向包含120克商购Aerosil 90G(Degussa)、861.8克去离子水、6.0克马来酸、0.1克硝酸、0.1克KOH和4.0克PDTA-Fe的混合物中,分别添加不同量(0.0克、1.0克、4.0克和8.0克)的二甘醇和/或乙二醇作为湿润剂。由此获得的每种反应溶液被加入2升的聚乙烯瓶中,在2,000rpm下搅拌2小时,然后使用高压分散方法在1,200psi下分散一次。使用1微米的过滤器过滤所得的浆料,得到浆料前体组合物。为了分析本发明浆料前体组合物的抛光性质,在作为W垫层片的多晶Si衬底上沉积1,000厚度的HTO,然后分别沉积1,000和10,000的TiN和W,制造出样品晶片。就在这种样品晶片被抛光之前,向所得浆料前体组合物中添加过氧化氢,使其含量基于所述浆料前体组合物为2重量%,然后搅拌反应溶液,制备最终的浆料组合物。使用如此制备的浆料组合物,在下面表1所示的抛光条件下抛光样品晶片1分钟,并且测量抛光性质。结果在下面的表1中给出。
表1
湿润剂 | W抛光速度(/min) | 擦痕缺陷(ea) | 凹陷() | |
二甘醇 | 0.0克 | 2680 | 20 | 183 |
二甘醇 | 1.0克 | 2780 | 18 | 180 |
二甘醇 | 4.0克 | 2860 | 15 | 165 |
二甘醇 | 8.0克 | 2910 | 5 | 154 |
乙二醇 | 4.0克 | 2800 | 14 | 159 |
乙二醇二甘醇 | 每种4.0克 | 2850 | 8 | 150 |
[物理性质的测量方法]
*抛光机型号:6EC(STRASBAUGH)
*抛光条件
-垫片型号:IC1400/SubalV Stacked(Rodel)
-平台速度(platen speed):75rpm
-头部速度(head speed):35rpm
-压力:4psi
-背部压力:0psi
-温度:25℃
-浆料流速:250/毫升/分钟
实施例2
静态化学蚀刻速率随湿润剂量而变化
向包含120克商购Aerosil 90G(Degussa)、861.8克去离子水、6.0克马来酸、0.1克硝酸、0.1克KOH和4.0克PDTA-Fe的混合物中,分别添加不同量(0.0克、1.0克、4.0克和8.0克)的二甘醇和/或乙二醇作为湿润剂。由此获得的每种反应溶液被加入2升的聚乙烯瓶中,在2,000rpm下搅拌2小时,然后使用高压分散方法在1,200psi下分散一次。此后,向所得浆料前体组合物中添加过氧化氢,使其含量基于所述浆料前体组合物为2重量%,然后搅拌反应溶液,制备最终的浆料组合物。随后,将钨片浸入浆料组合物中,实施静态化学蚀刻30分钟。此外,使用1.0克硝酸铁代替PDTA-Fe,测量静态化学蚀刻。结果在下面的表2中给出。
表2
湿润剂 | 静态化学蚀刻速率(/min) | ||
PDTA-Fe | 二甘醇 | 0.0克 | 20 |
二甘醇 | 1.0克 | 18 | |
二甘醇 | 4.0克 | 14 | |
二甘醇 | 8.0克 | 7 | |
乙二醇 | 4.0克 | 11 | |
乙二醇二甘醇 | 每种4.0克 | 9 | |
PDTA-Cr | 二甘醇 | 4.0克 | 15 |
二甘醇 | 8.0克 | 12 | |
硝酸铁 | 二甘醇 | 8.0克 | 44 |
二甘醇 | 0.0克 | 92 |
实施例3
混有过氧化物的浆料的抛光性能随时间的变化
向包含120克商购Aerosil 90G(Degussa)、861.8克去离子水、6.0克马来酸、0.1克硝酸、0.1克KOH和4.0克PDTA-Fe的混合物中,分别添加不同量(0.0克和8.0克)的二甘醇作为湿润剂。将由此获得的每种反应溶液加入2升的聚乙烯瓶中,在2,000rpm下搅拌2小时,然后使用高压分散方法在1,200psi下分散一次。向所得浆料前体组合物中添加过氧化氢,使其含量基于所述浆料前体组合物为2重量%,然后搅拌反应溶液,制备最终的浆料组合物。另外,使用1.0克硝酸铁代替PDTA-Fe,并在上述抛光条件下实施抛光过程1分钟,然后分析抛光性质。结果在下面的表3中给出。
表3
时间(hr) | 二甘醇(g) | W抛光速率(/min) | 研磨剂平均尺寸(nm) | |
PDTA-Fe | 0 | 0.0 | 2,680 | 153 |
8.0 | 2,910 | 153 | ||
2 | 0.0 | 2,500 | 154 | |
8.0 | 2,880 | 153 | ||
6 | 0.0 | 2,480 | 156 | |
8.0 | 2,890 | 155 | ||
12 | 0.0 | 2,440 | 158 | |
8.0 | 2,930 | 154 | ||
24 | 0.0 | 2,410 | 158 | |
8.0 | 2,860 | 156 | ||
硝酸铁 | 0 | 0.0 | 3,050 | 167 |
8.0 | 3,000 | 166 | ||
24 | 0.0 | 2,120 | 192 | |
8.0 | 2,790 | 172 |
如上所述,本发明提供了一种用于化学和机械抛光的浆料前体组合物,其中为了抛光金属层向所述浆料中添加湿润剂,从而提高所述浆料的分散能力,并在抛光时产生更少的擦痕,从而降低缺陷率。另外,由于过氧化物不稳定往往导致混有过氧化物的浆料在经过长时间抛光后抛光速率降低,在本发明的浆料中用作氧化剂的过氧化物的分解得到了抑制,从而改善了由于长时间抛光而引起的抛光速率降低。此外,当所述前体组合物与M-PDTA一起使用时,获得了低的静态化学蚀刻速率,从而防止了导电孔的凹陷。
Claims (20)
1.一种用于对半导体衬底上的金属层进行化学-机械抛光的浆料前体组合物,其包括:
含有pH控制剂、研磨剂、金属丙二胺四乙酸(M-PDTA)络合物、湿润剂和水的含水混合物。
2.权利要求1的浆料前体组合物,其中所述含水混合物还包含羧酸。
3.权利要求2的浆料前体组合物,其中所述pH控制剂包括无机酸和氢氧化物中的至少一种。
4.权利要求1的浆料前体组合物,其中所述湿润剂是二甘醇。
5.权利要求1的浆料前体组合物,其中所述含水混合物中的研磨剂的量大于等于8重量%。
6.权利要求5的浆料前体组合物,其中所述含水混合物中的湿润剂的量在从约0.4重量%至约1.2重量%的范围内。
7.权利要求6的浆料前体组合物,其中所述含水混合物中的M-PDTA络合物的量在从约0.1重量%至约0.8重量%的范围内。
8.权利要求1的浆料前体组合物,其中所述含水混合物中的湿润剂的量在从约0.4重量%至约1.2重量%的范围内。
9.权利要求1的浆料前体组合物,其中所述含水混合物中的M-PDTA络合物的量在从约0.1重量%至约0.8重量%的范围内。
10.一种用于对半导体衬底上的金属层进行化学-机械抛光的浆料前体组合物,其包括:
含有pH控制剂、用量大于等于8重量%的研磨剂、用量为约0.1重量%至约0.8重量%的金属丙二胺四乙酸(M-PDTA)络合物、用量为约0.4重量%至约1.2重量%的湿润剂、以及去离子水的含水混合物。
11.权利要求10的浆料前体组合物,其中所述含水混合物还包含羧酸。
12.权利要求11的浆料前体组合物,其中所述pH控制剂包括无机酸和氢氧化物中的至少一种。
13.权利要求12的浆料前体组合物,其中所述湿润剂是二甘醇。
14.权利要求10的浆料前体组合物,其中所述湿润剂是二甘醇。
15.一种用于对半导体衬底上的钨层进行化学-机械抛光的浆料前体组合物,其包括:
含有氢氧化钾、硝酸、用量为约0.4重量%至约0.8重量%的马来酸、用量大于等于8重量%的二氧化硅研磨剂、用量为约0.1重量%至约0.8重量%的Fe-PDTA络合物、用量为约0.4重量%至约1.2重量%的二甘醇、以及去离子水的含水混合物。
16.一种用于对半导体衬底上的金属层进行化学-机械抛光的浆料组合物,其包括过氧化氢、至少一种pH控制剂、用量大于等于8重量%的研磨剂、用量为约0.1重量%至约0.8重量%的Fe-PDTA络合物、用量为约0.4重量%至约1.2重量%的湿润剂、以及去离子水的含水混合物。
17.权利要求16的浆料组合物,其中所述湿润剂是二甘醇。
18.权利要求16的浆料组合物,其中提供有足够量的过氧化氢,以便当在约室温下将所述浆料组合物曝露于钨金属层上时,获得约5/min至约15/min的静态湿蚀刻速率。
19.一种形成集成电路芯片的方法,其包括下列步骤:
在半导体片的表面上形成电绝缘层;
在所述电绝缘层内形成多个接触孔;
沉积钨金属层,所述钨金属层在电绝缘层上延伸并沉积到多个接触孔中;及
使用浆料组合物抛光钨金属层,所述浆料组合物包含过氧化氢、用量大于等于8重量%的研磨剂、用量为约0.1重量%至约0.8重量%的Fe-PDTA络合物、用量为约0.4重量%至约1.2重量%的湿润剂、以及水。
20.权利要求19的方法,其中在所述抛光步骤后进行下列步骤:
将所述电绝缘层曝露于清洗溶液中;和
将所述半导体片切成多个半导体芯片。
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US10/959,228 | 2004-10-06 | ||
US10/959,228 US6953389B2 (en) | 2001-08-09 | 2004-10-06 | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
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US (2) | US6953389B2 (zh) |
EP (1) | EP1645606B1 (zh) |
JP (1) | JP4220983B2 (zh) |
KR (1) | KR100680509B1 (zh) |
CN (1) | CN100374527C (zh) |
DE (1) | DE602005001748T2 (zh) |
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2005
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- 2005-06-05 IL IL169006A patent/IL169006A/en unknown
- 2005-06-08 TW TW094118917A patent/TWI281188B/zh active
- 2005-06-09 US US11/148,670 patent/US7452815B2/en not_active Expired - Lifetime
- 2005-06-11 DE DE602005001748T patent/DE602005001748T2/de active Active
- 2005-06-11 EP EP05012588A patent/EP1645606B1/en active Active
- 2005-06-14 JP JP2005173346A patent/JP4220983B2/ja active Active
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JP2006108628A (ja) | 2006-04-20 |
IL169006A (en) | 2010-11-30 |
SG121931A1 (en) | 2006-05-26 |
US7452815B2 (en) | 2008-11-18 |
TWI281188B (en) | 2007-05-11 |
KR100680509B1 (ko) | 2007-02-08 |
EP1645606A1 (en) | 2006-04-12 |
MY140094A (en) | 2009-11-30 |
DE602005001748T2 (de) | 2008-04-10 |
DE602005001748D1 (de) | 2007-09-06 |
CN100374527C (zh) | 2008-03-12 |
US20050062016A1 (en) | 2005-03-24 |
US6953389B2 (en) | 2005-10-11 |
KR20060043826A (ko) | 2006-05-15 |
JP4220983B2 (ja) | 2009-02-04 |
US20050227491A1 (en) | 2005-10-13 |
TW200612465A (en) | 2006-04-16 |
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