CN1745433A - 对非易失性存储器中缺陷的区界调整 - Google Patents
对非易失性存储器中缺陷的区界调整 Download PDFInfo
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- CN1745433A CN1745433A CNA2003801093022A CN200380109302A CN1745433A CN 1745433 A CN1745433 A CN 1745433A CN A2003801093022 A CNA2003801093022 A CN A2003801093022A CN 200380109302 A CN200380109302 A CN 200380109302A CN 1745433 A CN1745433 A CN 1745433A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
- G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Credit Cards Or The Like (AREA)
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Abstract
Description
Claims (31)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/315,451 | 2002-12-09 | ||
US10/315,451 US6901498B2 (en) | 2002-12-09 | 2002-12-09 | Zone boundary adjustment for defects in non-volatile memories |
Publications (2)
Publication Number | Publication Date |
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CN1745433A true CN1745433A (zh) | 2006-03-08 |
CN100555465C CN100555465C (zh) | 2009-10-28 |
Family
ID=32468705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801093022A Expired - Lifetime CN100555465C (zh) | 2002-12-09 | 2003-12-02 | 操作非易失性存储***的存储***电路及方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US6901498B2 (zh) |
EP (1) | EP1570489B1 (zh) |
JP (1) | JP4576235B2 (zh) |
KR (1) | KR100992583B1 (zh) |
CN (1) | CN100555465C (zh) |
AT (1) | ATE555442T1 (zh) |
AU (1) | AU2003293322A1 (zh) |
TW (1) | TWI317946B (zh) |
WO (1) | WO2004053888A2 (zh) |
Cited By (10)
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CN102034548A (zh) * | 2009-09-25 | 2011-04-27 | 三星电子株式会社 | 非易失性存储器件和***及非易失性存储器件编程方法 |
CN101499316B (zh) * | 2008-01-30 | 2011-10-19 | 群联电子股份有限公司 | 快闪存储器区块管理方法及使用此方法的控制器 |
CN102610613A (zh) * | 2011-01-18 | 2012-07-25 | 旺宏电子股份有限公司 | 三维存储器结构 |
CN101533675B (zh) * | 2008-03-11 | 2013-11-06 | 深圳市朗科科技股份有限公司 | 闪存介质扫描和管理方法 |
CN105931666A (zh) * | 2015-02-26 | 2016-09-07 | 株式会社东芝 | 半导体存储装置及存储*** |
CN108009043A (zh) * | 2016-11-01 | 2018-05-08 | 辉达公司 | 内联错误检测和校正技术 |
CN109254723A (zh) * | 2017-07-12 | 2019-01-22 | 恩智浦美国有限公司 | 非易失性存储器中的存储器扇区注销 |
CN111373381A (zh) * | 2017-10-23 | 2020-07-03 | 美光科技公司 | 在受管理nand装置中的主机加速操作 |
CN112181276A (zh) * | 2019-07-03 | 2021-01-05 | 北京忆恒创源科技有限公司 | 提升存储设备服务质量的大块构造、分配方法及其存储设备 |
CN115237351A (zh) * | 2022-08-02 | 2022-10-25 | 苏州启恒融智信息科技有限公司 | Nand块动态重映射、读写命令处理方法及存储设备 |
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KR100544175B1 (ko) * | 1999-05-08 | 2006-01-23 | 삼성전자주식회사 | 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법 |
US7333364B2 (en) * | 2000-01-06 | 2008-02-19 | Super Talent Electronics, Inc. | Cell-downgrading and reference-voltage adjustment for a multi-bit-cell flash memory |
US7660941B2 (en) * | 2003-09-10 | 2010-02-09 | Super Talent Electronics, Inc. | Two-level RAM lookup table for block and page allocation and wear-leveling in limited-write flash-memories |
US6901498B2 (en) * | 2002-12-09 | 2005-05-31 | Sandisk Corporation | Zone boundary adjustment for defects in non-volatile memories |
KR100560645B1 (ko) * | 2002-12-17 | 2006-03-16 | 삼성전자주식회사 | 메모리 사용 정보를 표시하는 유에스비 플래시 메모리 장치 |
US7069377B2 (en) * | 2003-05-08 | 2006-06-27 | Micron Technology, Inc. | Scratch control memory array in a flash memory device |
US7046555B2 (en) | 2003-09-17 | 2006-05-16 | Sandisk Corporation | Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance |
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KR20130028788A (ko) * | 2004-03-12 | 2013-03-19 | 인터디지탈 테크날러지 코포레이션 | 멀티-모드 무선 송/수신 유닛을 갖는 무선 통신 시스템들 사이에서 무선 액세스 기술을 스위칭하기 위한 방법 및 시스템 |
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- 2003-12-02 AT AT03790271T patent/ATE555442T1/de active
- 2003-12-02 CN CNB2003801093022A patent/CN100555465C/zh not_active Expired - Lifetime
- 2003-12-02 JP JP2004559246A patent/JP4576235B2/ja not_active Expired - Lifetime
- 2003-12-02 WO PCT/US2003/038392 patent/WO2004053888A2/en active Application Filing
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- 2003-12-02 KR KR1020057010359A patent/KR100992583B1/ko active IP Right Grant
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2005
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Also Published As
Publication number | Publication date |
---|---|
CN100555465C (zh) | 2009-10-28 |
KR20050101160A (ko) | 2005-10-20 |
EP1570489A2 (en) | 2005-09-07 |
US9665478B2 (en) | 2017-05-30 |
AU2003293322A1 (en) | 2004-06-30 |
US20040111553A1 (en) | 2004-06-10 |
WO2004053888A3 (en) | 2004-09-30 |
TW200418033A (en) | 2004-09-16 |
US20070047305A1 (en) | 2007-03-01 |
JP4576235B2 (ja) | 2010-11-04 |
TWI317946B (en) | 2009-12-01 |
US7149871B2 (en) | 2006-12-12 |
WO2004053888A2 (en) | 2004-06-24 |
ATE555442T1 (de) | 2012-05-15 |
JP2006509304A (ja) | 2006-03-16 |
KR100992583B1 (ko) | 2010-11-05 |
EP1570489B1 (en) | 2012-04-25 |
US20050195661A1 (en) | 2005-09-08 |
US6901498B2 (en) | 2005-05-31 |
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