CN1741296A - 半导体衬底及在半导体衬底上通过外延生长制造的半导体器件 - Google Patents
半导体衬底及在半导体衬底上通过外延生长制造的半导体器件 Download PDFInfo
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- CN1741296A CN1741296A CNA2005100977489A CN200510097748A CN1741296A CN 1741296 A CN1741296 A CN 1741296A CN A2005100977489 A CNA2005100977489 A CN A2005100977489A CN 200510097748 A CN200510097748 A CN 200510097748A CN 1741296 A CN1741296 A CN 1741296A
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
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EP (1) | EP1630878B1 (zh) |
JP (5) | JP4892103B2 (zh) |
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2005
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CN105186284A (zh) * | 2014-05-30 | 2015-12-23 | 瑞萨电子株式会社 | 半导体器件以及半导体器件的制造方法 |
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TWI287256B (en) | 2007-09-21 |
US20060043419A1 (en) | 2006-03-02 |
JP5514260B2 (ja) | 2014-06-04 |
JP5050123B2 (ja) | 2012-10-17 |
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JP2012064956A (ja) | 2012-03-29 |
JP2011124589A (ja) | 2011-06-23 |
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EP1630878B1 (en) | 2017-10-18 |
JP2012209561A (ja) | 2012-10-25 |
JP4892103B2 (ja) | 2012-03-07 |
EP1630878A2 (en) | 2006-03-01 |
EP1630878A3 (en) | 2011-05-04 |
CN100449800C (zh) | 2009-01-07 |
JP2014027315A (ja) | 2014-02-06 |
KR20060050558A (ko) | 2006-05-19 |
JP2012114461A (ja) | 2012-06-14 |
US7531397B2 (en) | 2009-05-12 |
TW200620423A (en) | 2006-06-16 |
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Effective date of registration: 20180912 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS CO., LTD. Address before: Tokyo, Japan Patentee before: Toshiba electronic components and storage plant |