CN1723508A - 一次可编程存储器件 - Google Patents
一次可编程存储器件 Download PDFInfo
- Publication number
- CN1723508A CN1723508A CNA2003801056555A CN200380105655A CN1723508A CN 1723508 A CN1723508 A CN 1723508A CN A2003801056555 A CNA2003801056555 A CN A2003801056555A CN 200380105655 A CN200380105655 A CN 200380105655A CN 1723508 A CN1723508 A CN 1723508A
- Authority
- CN
- China
- Prior art keywords
- voltage
- transistor
- memory transistor
- memory
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Circuits Of Receivers In General (AREA)
- Color Television Systems (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02102734.7 | 2002-12-12 | ||
EP02102734 | 2002-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1723508A true CN1723508A (zh) | 2006-01-18 |
CN100483553C CN100483553C (zh) | 2009-04-29 |
Family
ID=32479806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801056555A Expired - Fee Related CN100483553C (zh) | 2002-12-12 | 2003-12-03 | 一次可编程存储器件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7333356B2 (zh) |
EP (1) | EP1573747B1 (zh) |
JP (1) | JP4787500B2 (zh) |
CN (1) | CN100483553C (zh) |
AT (1) | ATE446578T1 (zh) |
AU (1) | AU2003283684A1 (zh) |
DE (1) | DE60329781D1 (zh) |
WO (1) | WO2004053886A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646450A (zh) * | 2011-02-17 | 2012-08-22 | 台湾积体电路制造股份有限公司 | 一次性可编程位单元 |
CN104422873A (zh) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 高压器件hci测试电路 |
CN105322931A (zh) * | 2014-08-05 | 2016-02-10 | 密克罗奇普技术公司 | 电子装置及其电子熔丝 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2836752A1 (fr) * | 2002-02-11 | 2003-09-05 | St Microelectronics Sa | Cellule memoire a programmation unique |
FR2836751A1 (fr) * | 2002-02-11 | 2003-09-05 | St Microelectronics Sa | Cellule memoire a programmation unique non destructrice |
EP1522071B1 (en) * | 2002-07-08 | 2008-04-23 | Koninklijke Philips Electronics N.V. | Data retention of integrated circuit on record carrier |
WO2005081258A1 (en) * | 2004-01-23 | 2005-09-01 | Agere Systems Inc. | Method and apparatus for hot carrier programmed one time programmable (otp) memory |
US8010927B2 (en) * | 2007-10-02 | 2011-08-30 | International Business Machines Corporation | Structure for a stacked power clamp having a BigFET gate pull-up circuit |
JP2012174864A (ja) | 2011-02-21 | 2012-09-10 | Sony Corp | 半導体装置およびその動作方法 |
JP2012174863A (ja) | 2011-02-21 | 2012-09-10 | Sony Corp | 半導体装置およびその動作方法 |
JP2013232494A (ja) * | 2012-04-27 | 2013-11-14 | Sony Corp | 記憶素子、半導体装置およびその動作方法、ならびに電子機器 |
WO2013190882A1 (ja) * | 2012-06-19 | 2013-12-27 | シャープ株式会社 | 金属酸化物トランジスタ |
WO2014061633A1 (ja) * | 2012-10-19 | 2014-04-24 | シャープ株式会社 | 不揮発性記憶装置 |
JP2015076556A (ja) | 2013-10-10 | 2015-04-20 | ソニー株式会社 | メモリ装置、書込方法、読出方法 |
US9859016B2 (en) * | 2013-11-25 | 2018-01-02 | Sharp Kabushiki Kaisha | Semiconductor device and method for writing thereto |
JP2016134515A (ja) | 2015-01-20 | 2016-07-25 | ソニー株式会社 | メモリセルおよびメモリ装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60231355A (ja) * | 1984-04-27 | 1985-11-16 | Mitsubishi Electric Corp | 相補型半導体集積回路 |
US5257222A (en) * | 1992-01-14 | 1993-10-26 | Micron Technology, Inc. | Antifuse programming by transistor snap-back |
US5257225A (en) * | 1992-03-12 | 1993-10-26 | Micron Technology, Inc. | Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude |
GB9417264D0 (en) * | 1994-08-26 | 1994-10-19 | Inmos Ltd | Memory device |
US5834813A (en) * | 1996-05-23 | 1998-11-10 | Micron Technology, Inc. | Field-effect transistor for one-time programmable nonvolatile memory element |
JP3114620B2 (ja) * | 1996-05-30 | 2000-12-04 | 日本電気株式会社 | 半導体記憶装置 |
US5835402A (en) * | 1997-03-27 | 1998-11-10 | Xilinx, Inc. | Non-volatile storage for standard CMOS integrated circuits |
FR2762708B1 (fr) * | 1997-04-29 | 1999-06-04 | Sgs Thomson Microelectronics | Procede de commande d'une cellule memoire et memoire non volatile programmable une seule fois en technologie cmos |
US6298459B1 (en) * | 1997-07-18 | 2001-10-02 | Fujitsu Limited | Analog to digital converter with encoder circuit and testing method therefor |
US6034890A (en) * | 1998-01-22 | 2000-03-07 | Citizen Watch Co., Ltd. | Semiconductor nonvolatile memory device and method of writing thereto |
JP2000106402A (ja) * | 1998-01-22 | 2000-04-11 | Citizen Watch Co Ltd | 半導体不揮発性記憶装置およびその書き込み方法 |
KR100290917B1 (ko) * | 1999-03-18 | 2001-05-15 | 김영환 | 이에스디(esd) 보호회로 |
US6307423B1 (en) * | 2000-05-01 | 2001-10-23 | Xerox Corporation | Programmable circuit with preview function |
JP2002164513A (ja) * | 2000-11-28 | 2002-06-07 | Nippon Precision Circuits Inc | 半導体不揮発性メモリ装置及びその書込み方法 |
-
2003
- 2003-12-03 AT AT03775665T patent/ATE446578T1/de not_active IP Right Cessation
- 2003-12-03 WO PCT/IB2003/005621 patent/WO2004053886A1/en active Application Filing
- 2003-12-03 JP JP2004558946A patent/JP4787500B2/ja not_active Expired - Fee Related
- 2003-12-03 CN CNB2003801056555A patent/CN100483553C/zh not_active Expired - Fee Related
- 2003-12-03 AU AU2003283684A patent/AU2003283684A1/en not_active Abandoned
- 2003-12-03 DE DE60329781T patent/DE60329781D1/de not_active Expired - Lifetime
- 2003-12-03 EP EP03775665A patent/EP1573747B1/en not_active Expired - Lifetime
- 2003-12-03 US US10/538,288 patent/US7333356B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646450A (zh) * | 2011-02-17 | 2012-08-22 | 台湾积体电路制造股份有限公司 | 一次性可编程位单元 |
CN102646450B (zh) * | 2011-02-17 | 2016-03-23 | 台湾积体电路制造股份有限公司 | 一次性可编程位单元 |
CN104422873A (zh) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | 高压器件hci测试电路 |
CN105322931A (zh) * | 2014-08-05 | 2016-02-10 | 密克罗奇普技术公司 | 电子装置及其电子熔丝 |
Also Published As
Publication number | Publication date |
---|---|
US7333356B2 (en) | 2008-02-19 |
JP2006510203A (ja) | 2006-03-23 |
CN100483553C (zh) | 2009-04-29 |
JP4787500B2 (ja) | 2011-10-05 |
EP1573747B1 (en) | 2009-10-21 |
US20060056222A1 (en) | 2006-03-16 |
DE60329781D1 (de) | 2009-12-03 |
EP1573747A1 (en) | 2005-09-14 |
AU2003283684A1 (en) | 2004-06-30 |
WO2004053886A1 (en) | 2004-06-24 |
ATE446578T1 (de) | 2009-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100483553C (zh) | 一次可编程存储器件 | |
JP6503395B2 (ja) | 静電放電回路 | |
JP4651044B2 (ja) | 集積半導体回路を保護するための回路装置および方法 | |
US6627555B2 (en) | Method and circuit for minimizing the charging effect during manufacture of semiconductor devices | |
US5465190A (en) | Circuit and method for protecting power components against forward overvoltages | |
US7269047B1 (en) | Memory transistor gate oxide stress release and improved reliability | |
US7206247B2 (en) | Antifuse circuit with dynamic current limiter | |
KR100717973B1 (ko) | 정전 방전동안에 기생 바이폴라 영향들을 감소시키는 회로 및 방법 | |
EP1306852B1 (en) | A memory device | |
US20060291267A1 (en) | Antifuse circuit with current regulator for controlling programming current | |
US20070008800A1 (en) | Antifuse capacitor for configuring integrated circuits | |
CN1276510C (zh) | 非挥发记忆胞元 | |
US9336895B2 (en) | Memory device, semiconductor unit and method of operating the same, and electronic apparatus | |
US20130222954A1 (en) | Electrostatic discharge protection circuit | |
JP5590842B2 (ja) | 半導体記憶装置および半導体記憶装置の制御方法 | |
JP2005109480A (ja) | ワンタイム・プログラマブル・メモリ素子をプログラムするための装置および方法 | |
JP5404343B2 (ja) | 静電気放電保護回路 | |
US8363448B2 (en) | Semiconductor memory device | |
US8208312B1 (en) | Non-volatile memory element integratable with standard CMOS circuitry | |
US7649798B2 (en) | Memory device using antifuses | |
Verhaege et al. | Grounded-gate nMOS transistor behavior under CDM ESD stress conditions | |
US10411693B2 (en) | Methods and circuits for improved reliability of power devices operating under repetitive thermal stress | |
US20050024525A1 (en) | Solid-state imaging device, camera, power supply device and method thereof | |
US7778001B2 (en) | Integrated circuit protected against short circuits and operating errors following the passage on an ionizing radiation | |
US9805800B1 (en) | Electrically programmable read only memory devices having uniform program characteristic and methods of programming the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070810 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070810 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KONINKL PHILIPS ELECTRONICS NV Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20111028 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111028 Address after: Delaware Patentee after: NXP BV Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20131203 |