CN1671892A - Ⅲ族元素氮化物单晶的制造方法及由此制得的ⅲ族元素氮化物透明单晶 - Google Patents
Ⅲ族元素氮化物单晶的制造方法及由此制得的ⅲ族元素氮化物透明单晶 Download PDFInfo
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- CN1671892A CN1671892A CNA038183285A CN03818328A CN1671892A CN 1671892 A CN1671892 A CN 1671892A CN A038183285 A CNA038183285 A CN A038183285A CN 03818328 A CN03818328 A CN 03818328A CN 1671892 A CN1671892 A CN 1671892A
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- 239000013078 crystal Substances 0.000 title claims abstract description 100
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 125
- 239000011734 sodium Substances 0.000 claims abstract description 86
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 39
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 37
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 36
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 25
- 230000004907 flux Effects 0.000 claims abstract description 22
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 13
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 78
- 239000011575 calcium Substances 0.000 claims description 60
- 229910052791 calcium Inorganic materials 0.000 claims description 27
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 12
- 229910052744 lithium Inorganic materials 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052728 basic metal Inorganic materials 0.000 claims description 10
- 150000003818 basic metals Chemical class 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052730 francium Inorganic materials 0.000 claims description 4
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052705 radium Inorganic materials 0.000 claims description 4
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 abstract description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 42
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- 239000010408 film Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 22
- 238000005424 photoluminescence Methods 0.000 description 20
- 229910052594 sapphire Inorganic materials 0.000 description 18
- 239000010980 sapphire Substances 0.000 description 18
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 15
- 229910052582 BN Inorganic materials 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 229910001220 stainless steel Inorganic materials 0.000 description 12
- 239000010935 stainless steel Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000004927 fusion Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- -1 gan in advance Chemical class 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011534 incubation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BHZCMUVGYXEBMY-UHFFFAOYSA-N trilithium;azanide Chemical compound [Li+].[Li+].[Li+].[NH2-] BHZCMUVGYXEBMY-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
样品序号 | Na∶Ca(摩尔比) | Na(g) | Ca(g) |
1 | 9.75∶0.25 | 0.85956 | 0.038422 |
2 | 9∶1 | 0.79344 | 0.153688 |
3 | 8.5∶1.5 | 0.74936 | 0.230531 |
4 | 8∶2 | 0.70528 | 0.307375 |
5 | 7.5∶2.5 | 0.6612 | 0.384219 |
6 | 7∶3 | 0.61712 | 0.461063 |
样品序号 | Na∶Ca(摩尔比) | 氮化镓的生成量(g) |
1 | 9.75∶0.25 | 0.09102 |
2 | 9∶1 | 0.16016 |
3 | 8.5∶1.5 | 0.11704 |
4 | 8∶2 | 0.13543 |
5 | 7.5∶2.5 | 0.13827 |
6 | 7∶3 | 0.01699 |
比较例 | 只有Na | 0.01549 |
Na∶Ca(摩尔比) | 氮化镓的收率(%) |
9.75∶0.25 | 7.58% |
9.5∶0.5 | 13.94% |
9∶1 | 13.34% |
8.5∶1.5 | 9.75% |
8∶2 | 11.28% |
7.5∶2.5 | 11.51% |
7∶3 | 1.41% |
单独使用Na作助熔剂的情况 | 1.29% |
NH3的比例(%) | 氮化镓单晶的生成压力(atm) |
0 | 25 |
4 | 20 |
10 | 15 |
15 | 15 |
25 | 10 |
40 | 10 |
100 | 10 |
Claims (60)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002223190 | 2002-07-31 | ||
JP223190/2002 | 2002-07-31 | ||
JP339875/2002 | 2002-11-22 | ||
JP2002339875 | 2002-11-22 | ||
JP382610/2002 | 2002-12-27 | ||
JP2002382610 | 2002-12-27 | ||
JP27888/2003 | 2003-02-05 | ||
JP2003027888 | 2003-02-05 | ||
JP2003078680 | 2003-03-20 | ||
JP78680/2003 | 2003-03-20 | ||
JP88482/2003 | 2003-03-27 | ||
JP2003088482 | 2003-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1671892A true CN1671892A (zh) | 2005-09-21 |
CN1327044C CN1327044C (zh) | 2007-07-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038183285A Expired - Fee Related CN1327044C (zh) | 2002-07-31 | 2003-06-30 | Ⅲ族元素氮化物单晶的制造方法及由此制得的ⅲ族元素氮化物透明单晶 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7507292B2 (zh) |
EP (1) | EP1548160A4 (zh) |
JP (1) | JP4001170B2 (zh) |
KR (1) | KR100989507B1 (zh) |
CN (1) | CN1327044C (zh) |
AU (1) | AU2003246117A1 (zh) |
TW (1) | TW200403361A (zh) |
WO (1) | WO2004013385A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102272358A (zh) * | 2009-01-07 | 2011-12-07 | 日本碍子株式会社 | 单晶培养用反应容器以及单晶的培养方法 |
CN101405439B (zh) * | 2006-03-23 | 2012-04-04 | 日本碍子株式会社 | 氮化物单晶的制造装置 |
CN101405440B (zh) * | 2006-03-24 | 2012-05-30 | 日本碍子株式会社 | 氮化物单晶的制造方法及其装置 |
CN101558188B (zh) * | 2007-03-14 | 2012-08-29 | 松下电器产业株式会社 | Ⅲ族元素氮化物晶体的制造方法及ⅲ族元素氮化物晶体 |
CN101558187B (zh) * | 2006-12-15 | 2012-10-17 | 丰田合成株式会社 | 制造ⅲ族氮化物基化合物半导体晶体的方法 |
CN101611178B (zh) * | 2007-03-27 | 2013-02-13 | 日本碍子株式会社 | 氮化物单晶的制造方法 |
CN103305903A (zh) * | 2013-05-16 | 2013-09-18 | 西安交通大学 | 一种高氮压助熔剂-坩埚下降法制备GaN晶体的方法 |
CN101586253B (zh) * | 2008-05-22 | 2013-09-25 | 丰田合成株式会社 | N型ⅲ族氮化物基化合物半导体及其制造方法 |
CN103620096A (zh) * | 2012-03-30 | 2014-03-05 | 日本碍子株式会社 | 第13族元素氮化物晶体的制造方法以及熔融液组合物 |
CN107687022A (zh) * | 2016-08-04 | 2018-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 助熔剂法生长GaN单晶体系中促进籽晶液相外延的方法 |
US10100426B2 (en) | 2014-03-18 | 2018-10-16 | Ricoh Company, Ltd. | Method for producing gallium nitride crystal |
CN108796611A (zh) * | 2018-07-06 | 2018-11-13 | 孟静 | 氮化镓单晶生长方法 |
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US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
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- 2003-06-30 AU AU2003246117A patent/AU2003246117A1/en not_active Abandoned
- 2003-06-30 EP EP03738566A patent/EP1548160A4/en not_active Ceased
- 2003-06-30 KR KR1020057001789A patent/KR100989507B1/ko not_active IP Right Cessation
- 2003-06-30 JP JP2005506077A patent/JP4001170B2/ja not_active Expired - Fee Related
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CN101405439B (zh) * | 2006-03-23 | 2012-04-04 | 日本碍子株式会社 | 氮化物单晶的制造装置 |
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CN108796611A (zh) * | 2018-07-06 | 2018-11-13 | 孟静 | 氮化镓单晶生长方法 |
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EP1548160A1 (en) | 2005-06-29 |
US20060051942A1 (en) | 2006-03-09 |
JPWO2004013385A1 (ja) | 2006-09-21 |
KR20050030644A (ko) | 2005-03-30 |
JP4001170B2 (ja) | 2007-10-31 |
WO2004013385A1 (ja) | 2004-02-12 |
TW200403361A (en) | 2004-03-01 |
CN1327044C (zh) | 2007-07-18 |
EP1548160A4 (en) | 2009-04-29 |
AU2003246117A1 (en) | 2004-02-23 |
US7507292B2 (en) | 2009-03-24 |
TWI322202B (zh) | 2010-03-21 |
KR100989507B1 (ko) | 2010-10-22 |
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