CN1670114A - 研磨用磨料、研磨剂、研磨液、研磨液的制造方法、研磨方法以及半导体元件的制造方法 - Google Patents
研磨用磨料、研磨剂、研磨液、研磨液的制造方法、研磨方法以及半导体元件的制造方法 Download PDFInfo
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- CN1670114A CN1670114A CN200510055710.5A CN200510055710A CN1670114A CN 1670114 A CN1670114 A CN 1670114A CN 200510055710 A CN200510055710 A CN 200510055710A CN 1670114 A CN1670114 A CN 1670114A
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- grinding
- abrasive material
- abrasive
- sphericity
- lapping liquid
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- 238000000227 grinding Methods 0.000 title claims description 161
- 238000000034 method Methods 0.000 title claims description 38
- 239000006061 abrasive grain Substances 0.000 title abstract 2
- 238000002360 preparation method Methods 0.000 title 1
- 238000005389 semiconductor device fabrication Methods 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 62
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000011164 primary particle Substances 0.000 claims abstract description 12
- 239000003082 abrasive agent Substances 0.000 claims description 157
- 230000004520 agglutination Effects 0.000 claims description 30
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 18
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical group [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052708 sodium Inorganic materials 0.000 claims description 13
- 239000011734 sodium Substances 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 101710194948 Protein phosphatase PhpP Proteins 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- HWGNBUXHKFFFIH-UHFFFAOYSA-I pentasodium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O HWGNBUXHKFFFIH-UHFFFAOYSA-I 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000004090 dissolution Methods 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical group [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
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- 235000011152 sodium sulphate Nutrition 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
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- 238000005498 polishing Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 110
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 87
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- 238000009826 distribution Methods 0.000 description 29
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
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- 241001481789 Rupicapra Species 0.000 description 2
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- 238000010191 image analysis Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
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- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
研磨剂的成分 | 配比(重量%) | 浓度 |
硅石(磨料) | 20 | 11(g/L) |
二氯异氰酸钠 | 35 | 0.0082(mol/L) |
三聚磷酸钠 | 22 | 0.03(mol/L) |
硫酸钠 | 18 | 0.06(mol/L) |
碳酸钠 | 5 | 0.025(mol/L) |
条件 | 序号1 | 序号2 | 序号3 | 序号4 | 序号5 | 序号6 | 序号7 |
纯水添加量(%) | 47.7 | 55 | 市场上销售的硅石 | 市场上销售的硅石 | 市场上销售的硅石 | 市场上销售的硅石 | 市场上销售的硅石 |
干燥 | 恒温槽:120℃×24小时 | 海希艾路搅拌机:100℃×24小时 | |||||
分散及粉碎 | 无 | 冲击式粉碎机:25℃ | |||||
挥发性含量(重量%) | 0 | 0 | 10 | 9.5 | 6.7 | 7 | 7 |
硅石(磨料) | 平均粒径(μm) | 球形度 | ||
0分钟(注1) | 5分钟(注1) | 0分钟(注1) | 5分钟(注1) | |
序号1 | 3.74 | 1.46 | 0.59 | 0.56 |
序号2 | 14.44 | 5.24 | 0.45 | 0.66 |
序号3 | 7.72 | 6.20 | 0.65 | 0.67 |
序号4 | 3.26 | 3.03 | 0.70 | 0.68 |
序号5 | 4.88 | 4.9 | 0.60 | 0.59 |
序号6 | 12.42 | 12.32 | 0.58 | 0.56 |
序号7 | 14.82 | 14.70 | 0.54 | 0.54 |
项目 | 条件 |
样品 | 直径为100mm的GaAa晶片 |
研磨压力 | 3.5kPa(35gf/cm2) |
定盘转速 | 74rpm |
研磨液供给量 | 15ml/min |
研磨时间 | 60分钟 |
硅石(磨料) | 研磨速度(μm/min) | 晶片形状(TTV)(μm) | 表面粗糙度(Pv)(nm) | 外观 |
序号1 | 大于等于0.6 | 1.5 | 3~5 | ○ |
序号2 | 大于等于0.6 | 1.3 | 3~5 | ○ |
序号3 | 大于等于0.6 | 1.4 | 3~5 | ○ |
序号4 | 大于等于0.6 | 1.4 | 3~5 | ○ |
序号5 | 0.53 | 1.6 | 3~5 | ○ |
序号6 | 0.52 | 1.8 | 4~7 | ○ |
序号7 | 0.55 | 2.0 | 5~10 | △ |
条件 | 序号8 | 序号9 | 序号10 | 序号11 | 序号12 |
纯水添加量(%) | 49 | 46.5 | 46.5 | 55 | 市场上销售的硅石 |
干燥 | 海希艾路搅拌机:100℃×2小时 | 海希艾路搅拌机:100℃×2小时 | 海希艾路搅拌机:100℃×2小时 | 海希艾路搅拌机:100℃×2小时 | |
分散及粉碎 | 无 | 无 | 无 | 海希艾路搅拌机:25℃ | |
挥发含量(重量%) | 0 | 0 | 30 | 0 | 0 |
硅石(磨料) | 平均粒径(μm) | 球形度 | ||
0分钟(注1) | 5分钟(注1) | 0分钟(注1) | 5分钟(注1) | |
序号8 | 12.3 | 3.81 | 0.58 | 0.86 |
序号9 | 4.7 | 1.6 | 0.74 | 0.80 |
序号10 | 4.14 | 0.27 | 0.75 | 0.79 |
序号11 | 14.61 | 4.23 | 0.46 | 0.93 |
序号12 | 5.79 | 5.79 | 0.98 | 0.98 |
硅石(磨料) | 研磨速度(μm/min) | 晶片形状(TTV)(μm) | 表面粗糙度(Pv)(nm) | 外观 |
序号8 | 0.56 | 1.0(外周塌边) | 3~5 | ○ |
序号9 | 0.60 | 0.8(外周塌边) | 3~5 | ○ |
序号10 | 0.53 | 1.1(外周塌边) | 3~5 | ○ |
序号11 | 0.51 | 0.5(外周塌边) | 3~5 | ○ |
序号12 | 0.43 | 1.2(外周塌边) | 6~12 | × |
三聚磷酸钠浓度(mol/l) | |
1 | 0.03 |
2 | 0.05 |
3 | 0.07 |
4 | 0.085 |
研磨速度(μm/min) | 晶片形状(TTV)(μm) | 表面粗糙度(Pv)(nm) | 外观 | |
1 | 大于等于0.55 | 1.3 | 3~5 | ○ |
2 | 大于等于0.60 | 1.4 | 3~5 | ○ |
3 | 大于等于0.63 | 1.4 | 3~5 | ○ |
4 | 大于等于0.67 | 1.3 | 3~5 | △ |
硅石(磨料) | 循环次数(次) | 研磨速度(μm/min) | 晶片形状(TTV)(μm) | 表面粗糙度(Pv)(nm) | 外观 |
序号3 | 1 | 大于等于0.60 | 1.4 | 3~5 | ○ |
45 | 大于等于0.60 | 0.85(外周塌边) | 3~5 | ○ | |
序号6 | 46 | 大于等于0.58 | 1.3 | 4~6 | ○ |
95 | 大于等于0.57 | 1.1 | 4~6 | △ |
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004080756 | 2004-03-19 | ||
JP2004080756A JP4311247B2 (ja) | 2004-03-19 | 2004-03-19 | 研磨用砥粒、研磨剤、研磨液の製造方法 |
JP2004-080756 | 2004-03-19 |
Publications (2)
Publication Number | Publication Date |
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CN1670114A true CN1670114A (zh) | 2005-09-21 |
CN1670114B CN1670114B (zh) | 2010-05-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN200510055710.5A Active CN1670114B (zh) | 2004-03-19 | 2005-03-18 | 研磨用磨料、研磨剂、研磨液、研磨液的制造方法、研磨方法以及半导体元件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7267604B2 (zh) |
JP (1) | JP4311247B2 (zh) |
CN (1) | CN1670114B (zh) |
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- 2005-03-04 US US11/071,589 patent/US7267604B2/en active Active
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CN109952172B (zh) * | 2016-11-10 | 2021-09-24 | 胜高股份有限公司 | 磨粒与其评价方法以及晶片的制造方法 |
CN113561048A (zh) * | 2021-09-26 | 2021-10-29 | 常州市名流干燥设备有限公司 | 一种半导体晶圆干燥***用打磨膏输送机构 |
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JP4311247B2 (ja) | 2009-08-12 |
US20050205836A1 (en) | 2005-09-22 |
US7267604B2 (en) | 2007-09-11 |
JP2005264057A (ja) | 2005-09-29 |
CN1670114B (zh) | 2010-05-12 |
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