CN1643322A - Heat treatment system and formable vertical chamber - Google Patents

Heat treatment system and formable vertical chamber Download PDF

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Publication number
CN1643322A
CN1643322A CN 03806135 CN03806135A CN1643322A CN 1643322 A CN1643322 A CN 1643322A CN 03806135 CN03806135 CN 03806135 CN 03806135 A CN03806135 A CN 03806135A CN 1643322 A CN1643322 A CN 1643322A
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China
Prior art keywords
process chamber
carriage
substrates
bearing
heating element
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CN 03806135
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Chinese (zh)
Inventor
戴尔·R·杜博伊斯
杰米·H·纳姆
克雷格·威尔德曼
邱泰庆
杰弗里·M·科瓦尔斯基
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ASML US Inc
Aviza Technology Inc
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ASML US Inc
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Publication of CN1643322A publication Critical patent/CN1643322A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Control By Computers (AREA)
  • Control Of Fluid Pressure (AREA)
  • Control Of Non-Electrical Variables (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)

Abstract

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).

Description

Heat treatment system and formable vertical chamber
The cross reference of related application
The present invention requires the sequence number that is entitled as " heat treatment system " in application on July 15th, 2002 to be 60/396536 and to be the interests and the priority of 60/428526 the interim patent of the U.S. of granting by ordinary procedure at the sequence number that is entitled as " method of heat treatment system and this system of use " of application on November 22nd, 2002.Here it is for reference to quote in full these two patents.
Technical field
In general, the present invention relates to the system and method for heat treatment object (for example substrate).More particularly, the present invention relates to heat treatment, annealing and with material layer depositions on semiconductor wafer or substrate or remove the apparatus and method of material layer from semiconductor wafer or substrate.
Background technology
In making the integrated circuit (IC) or semiconductor devices that constitutes by semiconductor chip or wafer, use annealing device usually.The heat treatment of semiconductor wafer comprises for example heat treatment, annealing, diffusion or drives the dopant material, the deposition of material layer or generation and etching or remove material from the substrate.These processing requirements before this is handled and among, be heated to wafer up to 1300 ℃ and be low to moderate 300 ℃ temperature, and one or more fluids (for example handling gas or reactant) are delivered to wafer.In addition, these handle general requirement, change although the temperature of processing gas or this gas import the speed of process chamber, and in this was handled, this wafer still remained under the consistent temperature.
Common annealing device generally comprises the bulky process chamber that is placed in the heating furnace or is heated the stove encirclement.The substrate of heat-treating is sealed in this process chamber, utilizes heating furnace that this process chamber is heated to then and handles temperature desired.For many processes (for example chemical vapour desposition (CVD)), at first the process chamber with sealing vacuumizes, and after this process chamber reaches temperature desired, feeds reaction or handles gas, so that form or the deposition reactant material on this substrate.
In the past, annealing device (particularly vertical heat processing apparatus) requirement will protect heater (guardheaters) to be placed on above the treatment region of handling wafer product and the place of the sidewall of following, close this process chamber.This structure is undesirable, because it needs bigger cavity volume, and the essential step-down of this volume, regulate the flow of vital energy body or steam of use is full of and refills or clean, and the result increases the processing time.In addition since from heater to the observation factor of this wafer bad (a poor view factory of thewafers from the heaters), so this structure occupies a large amount of spaces and power.
Before the other problems of common annealing device was included in processing, the temperature that improves this process chamber and wafer to be processed needed a lot of times and reduce temperature after processing to need the time.In addition, also need the extra time to guarantee that the temperature of this process chamber as one man has been stabilized in temperature desired before processing can begin usually.May for half an hour or still less, the time of preliminary treatment and post processing be generally wanted 1～3 hour or longer although handle real time that wafer needs.The required time of temperature to an even temperature that raises like this, fast and/or reduce process chamber has been limited the productivity ratio of common annealing device greatly.
Raising and the time of reducing temperature are in common annealing device than a long fundamental cause, before heating effectively or cooling off wafer, and essential the heating or the process chamber of cooling and/or the thermal mass of heating furnace.
A kind of common reduce or the method to this restriction of common annealing device productivity ratio of compensate be increased in once circulation or turn round in manageable wafer number.Handle the useful efficiency that a large amount of wafers can increase this device by the effective processing time that reduces each wafer simultaneously.Yet if go wrong in processing procedure, this method has also increased dangerous degree.That is, if such as in the single treatment cyclic process, equipment or processing are broken down, and then may destroy or damage a large amount of wafers.This is for larger-size wafer and complicated integrated circuit problem especially because according to the processing stage difference, a wafer may Jia Zhi $1000～$10000 dollar.
Another problem of this solution is that the size that increases process chamber can increase the influence of process chamber thermal mass to hold a large amount of wafers, thereby reduces the speed of wafer heating or cooling.In addition, the bigger process chamber of handling more large batch of wafer causes or produces the fault of " first advances last has ", at this moment the wafer in first chamber of packing into also is the last wafer that takes out, cause these wafer long periods to expose at high temperature like this, reduce the uniformity of measuring wafer by the gross.
Another problem of said method is that employed system of many processing and device are not suitable for handling simultaneously a large amount of wafers before and after heat treatment.Like this, the wafer that heat treatment is in enormous quantities or a large amount of, in the productivity ratio that increases annealing device, total productivity ratio of improving semiconductor manufacturing facility is contributed seldom, and in fact may reduce total productivity ratio, because before this annealing device, will accumulate wafer, these wafers are become at the other system in its downstream and the bottleneck of device.
Quick heat treatment rapid thermal treatment (RTP) system that is used for wafer as the alternative device of above-mentioned this common annealing device for exploitation.Generally, common RTP system uses high-intensity lamp, little, transparent being generally in the process chamber that quartz makes, heats a wafer or a spot of wafer selectively.The RTP system can reduce or eliminate the influence of process chamber thermal mass, and because this light fixture has low-down thermal mass, by instantaneous this lamp that opens or closes, can heat or cool off wafer apace.
Yet common RTP system has important disadvantages, and these shortcomings comprise the layout of this lamp.In the past, this lamp is arranged in the zone or the lamp group of a large amount of lamp of each sidewall that all comprises close this process chamber.This structure is problematic, because observe factor bad (poor view factory), effectively to work in order to make these lamps, they occupy a large amount of spaces and need a large amount of electric energy, and in the latest generation semiconductor processing equipment, all these is very valuable.
Another problem of common RTP system is, it can not a plurality of wafers in a collection of wafer on and even wafer on form even temperature and distribute.This temperature distributing disproportionation is even several reasons: (i) utilize one or more lamps, and bad to the observation factor of one or more wafers; (ii) the power output of lamp changes.
In addition, the output fault of a lamp or variation have adverse effect to the Temperature Distribution of wafer.For this reason, in the system of great majority based on lamp, in processing procedure, rotate a wafer or a plurality of wafer, the temperature non that the variation of exporting owing to lamp with assurance causes can not passed on to wafer.Yet, rotate the needed moving parts of wafer, especially feed the revolution lead-in wire of process chamber, the cost of system and complexity are increased, thereby reduce total reliability of system.
The place of another trouble of RTP system is to keep the outward flange of wafer and the uniform temperature at center to distribute.Most of common RTP systems do not have the device of the temperature non of suitable this form of adjusting.As a result, on wafer surface, produce instantaneous temperature fluctuation, unless use the susceptor body (black body susceptor) of the diameter black bigger than wafer, this may be formed on the slippage dislocation in the high temperature lower wafer.
The common shortcoming that also has other based on the RTP system of lamp.For example, unless use phase angle control, otherwise do not have proper device to can be provided between transient period (for example lamp switches on and off) uniform power distribution and even temperature in the process; And adopt phase angle control can produce electrical noise.The reproducibility of performance also is a shortcoming based on the system of lamp.Because each lamp is aging all different to its performance.Changing lamp also is that cost is high and time taking, particularly all the more so when given lamp system has 180 lamps of surpassing.Power demand is possibility cost height also, because the peak power consumption of lamp can reach about 250kw.
Therefore, need be in heat treatment process, can be fast and equably a collection of one or more substrates are heated to the apparatus and method that all reach temperature desired on the surface of each substrate in this batch.
Summary of the invention
The invention provides the method that solves these and other problems, and other advantage is arranged than prior art.
The invention provides the apparatus and method of a kind of isothermal heated parts (for example semiconductor chip or wafer).Can carry out such as annealing, diffusion or drive dopant material, the deposition of material layer or growth, etching or remove the processing of material from the wafer.
A kind of annealing device is provided, and it can at high temperature be handled and be contained in a substrate in the carriage.This device comprises having roof, a process chamber and a heating source of sidewall and diapire; This heating source has a plurality of heating element heaters near this processing wall roof, sidewall and diapire, can form isothermal environment in the treatment region of placing this carriage, with this substrate of heat treatment.According to an aspect, the size of this process chamber can be selected to such an extent that can seal one haply unlike holding the required capacious volume of carriage, and this treatment region extends in the entire process chamber haply.The size of preferred this process chamber can be selected to such an extent that can seal one haply unlike 125% a big volume that holds the necessary volume of carriage.Preferred, this device also comprises a pumping system, so that before reaching processing pressure this process chamber is vacuumized, also comprises a purging system in addition, is used at the back back-filling process chamber of finishing dealing with.The size of this process chamber should be chosen to and can vacuumize this process chamber fast and quick this process chamber of back-filling.
According to another aspect of the present invention, the diapire of this process chamber comprises a movable support with at least one heating element heater, and this movable support liftable takes out from process chamber so that the carriage of carrying substrates is inserted this process chamber neutralization.In one embodiment, this device also comprises a movable heat shield piece, can insert between the heating element heater and the interior substrate that is carried of carriage in the bearing.The heat energy reflected back bearing that this heat shield piece can produce the heating element heater from this bearing, and the substrate of shielding on carriage are not subjected to the influence of the heat energy of the heating element heater generation on the bearing.In a kind of form of this embodiment, this device also comprises a baffle plate, can when this bearing when dipping, move to this position above carriage, process chamber is separated.This device also comprises a pumping system that vacuumizes to process chamber, this baffle plate can be with process chamber sealing so that when this bearing when dipping, this pumping system vacuumizes process chamber.
In yet another embodiment, this device also comprises the reorientation system of a magnetic couplings, and it can reorientate carriage in the process of heat treatment substrate.Preferred, the reorientation system of this magnetic couplings is the rotary system of magnetic couplings, and it can rotate this carriage in treatment region in heat treatment substrate process.
According to a further aspect of the invention, this device also comprises a lining and distributed or cross flow one spraying system that roof and sidewall with this carriage and process chamber separate; This spraying system is used for the surface of each substrate that the guide of flow of fluid is carried to the carriage.This cross flow one spraying system generally comprises a cross flow one injector with a plurality of jets of arranging with respect to the substrate that is carried in the carriage, and fluid can be delivered on the one side of these a plurality of substrates by this injector.With respect to the substrate that is carried in the carriage arrange, a plurality of exhaust outlets in the lining flow fluid on the surface of substrate.The fluid of being introduced by the cross flow one spraying system comprises to be handled gas or steam and is used for cleaning or this chamber of back-filling or be used for inert purge gases or steam at this chamber cooling substrate.
Description of drawings
Of the present invention these with different other characteristics and advantages, will be clear when reading below in conjunction with the detailed description of accompanying drawing and appended claim.Wherein:
Fig. 1 is according to an embodiment of the invention, uses the cross-sectional view of annealing device of heater that volume is waited the band bearing of temperature control that has of common upwards flow structure;
Fig. 2 is the perspective view of the base plate of another embodiment of using in annealing device shown in Figure 1;
Fig. 3 is for according to one embodiment of present invention, has the cross-sectional view of a part of the annealing device of the heater of band bearing and heat shield piece;
Fig. 4 is the heater of band bearing shown in Figure 3 according to an embodiment of the invention and the schematic diagram of heat shield piece;
Fig. 5 is the schematic diagram according to an embodiment of the heat shield piece of the lower floor that has the top layer made by the material of high absorbent capacity and made by the material of high reflectance of the present invention;
Fig. 6 is the schematic diagram according to another embodiment of heat shield piece of the present invention, as to have a cooling duct;
Fig. 7 is the perspective view according to heat shield piece of the present invention and actuator;
Fig. 8 has the cross-sectional view of a part of the annealing device of baffle plate according to one embodiment of present invention;
Fig. 9 is the cross-sectional view according to a process chamber of the wafer rotary system of heater one embodiment of the invention, that have the band bearing and magnetic couplings;
Figure 10 has the cross-sectional view of the annealing device of cross flow one ejector system for according to one embodiment of present invention;
Figure 11 is according to an embodiment of the invention, and expression injector aperture is with respect to the position of lining and the air discharge duct cross-sectional side view with respect to the part of the annealing device shown in Figure 10 of the position of wafer;
Figure 12 is for according to one embodiment of present invention, the plane of the part of the annealing device of being got along the A-A line of Figure 10 shown in Figure 10, and expression is injected in the gas flow of wafer and exhaust outlet from the aperture of main and auxiliary ejector;
Figure 13 is for according to another embodiment of the invention, the plane of the part of the annealing device of being got along the A-A line of Figure 10 shown in Figure 10, and expression is injected in the gas flow of wafer and exhaust outlet from the aperture of main and auxiliary ejector;
Figure 14 is for according to still another embodiment of the invention, the plane of the part of the annealing device of being got along the A-A line of Figure 10 shown in Figure 10, and expression is injected in the gas flow of wafer and exhaust outlet from the aperture of main and auxiliary ejector;
Figure 15 is for according to still a further embodiment, the plane of the part of the annealing device of being got along the A-A line of Figure 10 shown in Figure 10, and expression is injected in the gas flow of wafer and exhaust outlet from the aperture of main and auxiliary ejector;
Figure 16 is according to an embodiment of the invention, has the cross-sectional view of another kind to the annealing device of upper reaches ejector system;
Figure 17 is according to an embodiment of the invention, has the cross-sectional view of another kind to the annealing device of dirty ejector system;
Figure 18 is the flow chart of an embodiment of the processing of a collection of wafer of expression heat treatment according to an embodiment of the invention, and wherein each wafer in this batch wafer all is heated to temperature desired fast and equably; With
Figure 19 is the flow chart of another embodiment of the processing of a collection of wafer of expression heat treatment according to an embodiment of the invention, and wherein each wafer in this batch wafer all is heated to temperature desired fast and equably.
The specific embodiment
The invention provides a kind of apparatus and method of handling one or more workpiece of a spot of or small lot, this workpiece for example can be semiconductor chip or the wafer that is carried on the carriage (for example box or evaporimeter), like this uniformity of circulation timei that can reduce to handle and improvement processing.
Terminology used here " small lot " is meant a plurality of wafers of a hundreds of wafer that is less than in the general batch system, preferably in 1～about 53 semiconductor wafer scopes, or 1～50 semiconductor wafer is wherein arranged is the finished product wafer, and all the other are to be used to monitor purpose and as the non-finished product wafer of baffle wafers.
Heat treatment is meant the processing that workpiece or wafer is heated to the desired temperature of about 350 ℃～1300 ℃ of scopes.The heat treatment of semiconductor wafer can comprise: the heat treatment of dopant material, annealing, diffusion or driving, the deposition of material layer or growth (for example chemical vapour desposition or CVD) and etching or remove material from the wafer.
Referring now to Fig. 1 annealing device according to an embodiment is described.For the sake of clarity, omitted the details of many annealing devices well-known and known to those skilled in the art.The explanation in No. 4770590, the United States Patent (USP) of granting by ordinary procedure in more detail of these details, it is for reference to quote this patent here.
Fig. 1 is the cross-sectional view of an embodiment of a kind of annealing device of heat treatment bulk of semiconductor crystal chips.As shown in the figure, this annealing device 100 generally includes a container 101 and thermal source or heating furnace 110: volume of these container 101 sealings forms a process chamber 102; This process chamber has supporting 104, can place a carriage or evaporimeter 106; 108 of a collection of wafers are loaded in this evaporimeter 106; This thermal source or heating furnace have a plurality of heating element heater 112-1,112-2 and 112-3 (being referred to as heating element heater 112 later on), are used for chip temperature is increased to heat treated temperature desired.This annealing device 100 also comprises one or more optics or electric temperature-sensing element (for example Resistance Temperature Device (RTD) or thermocouple (T/C)), be used to monitor in process chamber 102 temperature and/or control heating element heater 112 work.In an illustrated embodiment, temperature-sensing element is the T/C114 that makes certain contour shape.This T/C114 has a plurality of independently temperature detection nodes or is used to detect the some (not shown) of the temperature of a plurality of positions in process chamber 102.This annealing device 100 also can comprise one or more injectors 116 (only having represented an injector among the figure), is used for fluid (for example gas or steam) is introduced this process chamber 102, carries out the processing and/or the cooling of wafer 108; And this annealing device also comprises one or more Butterworth Hatch or exhaust outlet 118 (only having represented an exhaust outlet among the figure), is used to introduce gas, cleans this process chamber and/or cooling wafer.Lining 120 is increased near the zone that will handle wafer or the wafer in the treatment region 128 108 the processing gas or the concentration of steam, and can reduce by the deposit flaking that can form on the inner surface of process chamber 102 or peel off the wafer contamination that causes.Handle gas or steam,, discharge from this treatment region by exhaust outlet in this process chamber lining 120 or groove 121.
Other structures that are fit to of some of injector 116, manufacturing technology and material, in more detail what grant by ordinary procedure, examining, sequence number is TBD, be entitled as in the PCT patent application of " apparatus and method in back-filling semiconductor wafer processing chamber " and be described.This patent application quotes in full for reference here being proposed for FP-71750-PC number by agency's numbering on the same day.
Generally, this container 101 is sealed on a platform or the base plate 124 by a seal (for example o RunddichtringO) 122, to form process chamber 102; This process chamber is in heat treatment process, with wafer 108 complete closed.Select the size of this process chamber 102 and this base plate 124, apace this process chamber is vacuumized Fast Heating and quick this process chamber of back-filling.Favourable, the size of this container 101 and base plate 124 makes the size that makes this process chamber 102 and surrounds a capacious volume required unlike the carriage that holds carrying wafer 108 106 haply.Preferably, the size of this container 101 and base plate 124 makes and process chamber 102 is of a size of hold about 125～150% of the carriage 106 necessary volumes that carrying wafer 108, more preferably, the size of this process chamber is not more than holds about 125% of this carriage and the necessary volume of crystal, so that reduce the volume in this chamber, help pumping and the needed time of back-filling.
Utilize seal (for example O RunddichtringO), VCR Or CF Part, sealing injector 116, the aperture of T/C114 and exhaust outlet 118.As shown in Figure 1, gas or the steam emitting in processing procedure or introduce are discharged by the fore line or the exhaust outlet 126 that form in the wall of these process chamber 102 (not shown)s or in the chamber 127 of base plate 124.This process chamber 102 can remain in heat treatment process under the atmospheric pressure, or passes through a pumping system (not shown), is evacuated to be low to moderate 5mTorr.This pumping system comprises pump, air blast, high-vacuum pump and the preliminary throttling fore line valve (roughing, throttle and foreline valves) that one or more preliminary pumps are taken out.
In another embodiment shown in Figure 2, this base plate 124 comprises that also is an annular flow channel 129 haply.This passage 129 can hold and support injector 116.This injector 116 comprises a ring 131, and a plurality of vertical gun hoses or injector 116A hang from above from this ring.As described below, the size and dimension of this injector 116 is made can form upwards and is flowed, and flows downward or the flow pattern of cross flow one.The position of this ring 131 and injector 116A is in the process chamber of gas being spurted between evaporimeter 106 and container 101 102.In addition, this injector 116A separates each other round this ring 131, sends in the process chamber 102 so that will handle gas or steam equably, and can in cleaning or back-filling process, be used for purge gas is fed this process chamber as needs.The size of this base plate 124 is made short drum forms, has outwardly directed upper flange 133, sidewall 135 and the base 137 that inwardly stretches out.This upper flange 133 is suitable for accepting and supporting this container 101, and holds an O RunddichtringO 122 with this container and upper flange sealing.This base 137 is supported the outside at place at the ring 131 of this injector 116, accepts and support sleeve 120.
In addition, there are various mouthfuls on the base plate 124 shown in Figure 2, comprise back-filling/purge gas inlet port 139,143, be used for making cooling fluid at the cooling vent 145,147 of base plate 124 circulations and the pressure monitoring mouth 149 of the pressure of monitoring in process chamber 102.Handle gas inlet port 151,161 gas is delivered to injector 116 from the supply source (not shown).This back-filling/Butterworth Hatch 139,143 is configured on the sidewall 135 of this base plate 124, is mainly used in gas is delivered to exhaust outlet 118 from discharge/purge gas supply source (not shown).Mass flow controller (not shown) and any other suitable flow controller are placed on the pipeline between gas supply source and mouthfuls 139,143,151 and 161, in order to the gas flow in the control inflow process chamber 102.
Container 101 and lining 120 can be by any metal, potteries, can bear the heat of high temperature and high vacuum work and mechanical stress and the crystal or the glass material that can tolerate the corrosion of the gas that in processing procedure, uses or emit and steam make.Preferably, this container 101 and lining 120 are made by opaque translucent or transparent quartz glass, and quartz glass has enough thickness, handle the deposition of byproduct to bear mechanical stress with tolerance, thereby can reduce the potentially contaminated of processing environment.Preferred, this container 101 and lining 120 are by reducing or eliminating from zone of handling wafer 108 or the quartz that treatment region 128 conducts the heat that and make.Wafer 108 is in batch sent in the annealing device 100 by a load fore shaft or load port (not shown), then by sending in the process chamber 102 with the process chamber of its formation gas-tight seal inlet or the hole on base plate 124.In structure shown in Figure 1, process chamber 102 is a vertical reactor, and should use a movable bearing 130 by inlet, and this bearing raises in processing procedure, with a sealing (for example o RunddichtringO 132) sealing on base plate 124; And descending makes operator or automatic assembling and disassembling system (for example evaporimeter handler (BHU) does not illustrate) that this carriage or evaporimeter 106 are placed in the supporting 104 that is fixed on this bearing.
Heating element heater 112 comprises the top 134 (element 112-3) that is placed near process chamber 102, the element of side 136 (element 112-2) and bottom 138 (element 112-1).Favourable, this heating element heater 112 surrounds this wafer, so that can see wafer well, volume or treatment region 128 in the process chamber of handling wafer 108 is waited temperature control.Heating element heater 112-1 near process chamber 102 bottoms 138 can be placed in the bearing 130 or on it.If desired, also other heating element heater can be placed in the base plate 124 or on it, to replenish the heat of sending from heating element heater 112-1.
In the embodiment shown in fig. 1, preferably be placed on the recess of movable support 130 near the heating element heater 112-1 of process chamber bottom.This bearing 130 is made by thermal insulation and insulating material or the block 140 that insulate, and stratie 112-1 imbeds wherein or be fixed thereon.Bearing 130 also comprises one or more feedback transducers or T/C141, is used to control heating element heater 112-1.Shown in structure in, T/C141 imbed the insulation block 140 the center.
Side heat element 112-2 and top heating element heater 112-3 can center on container 101, are placed in the insulation block 110 or on it.Preferably, this side heat element 112-2 and top heating element heater 112-3 are placed on the recess of insulation block 110.
Heating element heater 112 and insulation block 110 and 140 can be various structures, the manufacturing that ins all sorts of ways, and can be made from a variety of materials.The structure that some are suitable is well-known on manufacturing technology and the material technology, other then be entitled as " from being low to moderate the transformable heating element of high temperature range ", sequence number is to be described the PCT patent application of TBD.This patent application is proposing for FP-71795-PC number with agency's numbering on the same day, and it is for reference to introduce this patent application in full here.
Preferably, in order to obtain the expectation treatment temperature below 1150 ℃, the heating element heater 112-1 of the bottom 138 of close process chamber 102 has the peak power output of about 0.1～10KW, and its highest treatment temperature is at least 1150 ℃.Preferred, the power output of these bottoms heating element heater 112-1 is approximately 3.8KW at least, and the highest treatment temperature is at least 950 ℃.In one embodiment, then be divided into a plurality of districts on this side heat element 112-2 function, comprise lower region and upper zone near this bearing 130, each district can be different power level and load cycle independently of each other, work independently with top heating element heater 112-3 with bottom heating element heater 112-1.
This heating element heater 112 can be controlled with any suitable mode, can utilize control technology mode well-known in the art to control, or be used in be entitled as " feedforward temperature controller ", sequence number is the control method control described in the PCT patent application of TBD.This patent application proposes for FP-71754-PC number with agency's numbering on the same day, and it is for reference to introduce this patent application in full here.
By this heating element heater and insulation block are placed in the silica crucible 142 of a reversing, then can reduce the pollution that (if not eliminating) caused by this insulation block 140 and bottom heating element heater 112-1.This silica crucible can be used as the barrier between heating element heater and insulation block and the process chamber 102.This crucible 142 is gone back and load port and BHU environmental sealing, further to reduce or to eliminate the pollution of processing environment.Generally, the inside of this crucible 142 is the atmospheric pressure of standard, and therefore, this crucible 142 should be enough solid, can bear between process chamber 102 and the bearing 130, across crucible 142 up to 1 atmospheric pressure differential.
When loading or unloading wafer 108, promptly when bearing 130 when down position (Fig. 3), give this bottom heating element heater 112-1 energising, with the maintenance idle running temperature lower than desirable treatment temperature.For example, be 950 ℃ processing for the ideal process temperature of bottom heating element heater, the idle running temperature can be 50～150 ℃.For some processing, can set the idle running temperature higher, (for example wish that treatment temperature is higher and/or rising speed is higher, maybe will reduce the processing of bottom heating element heater 112-1 thermal cycle influence) is to prolong component life.
In order further to reduce the pretreated time, promptly prepare this annealing device 100 and handle the required time, can be in the process that pushes away or adorn, promptly when the bearing 130 that has the evaporimeter 106 that wafer 108 is housed raises, can make this bottom heating element heater 112-1 be warming up to desirable treatment temperature or at this below temperature.Yet, in order to reduce on the wafer 108 and the thermal stress on the part of annealing device 100, preferably, this bottom heating element heater 112-1 is with the top 134 of close process chamber 102 and the heating element heater 112-3 and the 112-2 of side 136 reach desirable treatment temperature simultaneously respectively.Therefore, for some processing (for example, requiring desirable treatment temperature high processing), can when the final wafer 108 in the dress batch time, before bearing 130 begins to raise, make the temperature of this bottom heating element heater 112-1 begin to raise.
Equally, after the processing and drawing or unload in the cyclic process, promptly when bearing 128 reduces, in order to prepare to cool off wafer 108 and unload lower wafer with BHU, can reduce power supply, or remove electric power fully, to begin the making temperature of bearing 130 be reduced to the idle running temperature bottom heating element heater 112-1.
For before drawing or unloading circulation, help bearing 130 is cooled to the temperature of drawing, the detergent line of an air or inert purge gases (for example nitrogen) is installed by this insulation block 140.Preferably, a passage 144 ejections of nitrogen by passing insulation block 140 centers, and from flowing out to the periphery of crucible between the inside of the top of insulation block 140 and crucible 142.Then, the nitrogen of heat is expelled in the environment by " high-efficient granule air (HEPA) filter " (not shown), or to the outlet (not shown) of equipment.The structure of this central-injection can make the center fast cooling of wafer 108, therefore, is desirable for the center that reduces bottom wafer or wafer/lip temperature difference, otherwise wafer can damage owing to the slippage dislocation of lattice structure.
As mentioned above, in order to increase or prolong the life-span of bottom heating element heater 112-1, can set the idle running temperature higher, near desirable treatment temperature, to reduce the influence of thermal cycle.In addition, also wish periodically in the oxygen containing environment of richness, to cure heating element heater 112-1, to promote the formation of protective oxide face coat.For example, by the alloy that contains aluminium (for example, Kanthal ) when making stratie, in the oxygen containing environment of richness, bake heating element heater 112-1 and can impel the alumina surface growth.Like this, this insulation block 140 also can comprise an oxygen pipeline (not shown), to impel in baking heating element heater 112-1 process, forms the protective oxide face coat.Another kind method is that the oxygen that bakes usefulness can be used for supplying with the pipe blow-through that cools off nitrogen by a triple valve and send into by in the processing procedure.
Fig. 3 is the cross-sectional view of the part of annealing device 100.Fig. 3 represents when loading or unloading wafer 108, promptly when the annealing device 100 of this bearing 130 when dipping.In this mode of operation, annealing device 100 also comprises a heat shield piece 146, and it can rotate or slide into the position above the lower wafer 108 in this bearing 130 and evaporimeter 106.In order to improve the performance of this heat shield piece 146, general, on the side of heating element heater 12-1, this heat shield piece is reflexive, then is being absorbefacient on a side of wafer 108.The purpose of this heat shield piece 146 comprises the reduction of the cooling velocity of the wafer 108 that is increased in the evaporimeter 106, with the idle running temperature of assisting to keep this bearing 130 and bottom heating element heater 112-1, process chamber 102 is warming up to the required time of desirable treatment temperature to reduce.Illustrate in greater detail an embodiment of annealing device with a heat shield piece referring now to Fig. 3～6.
Fig. 3 also represents to have an embodiment of the annealing device 100 of bearing heating element heater 112-1 and heat shield piece 146.In an illustrated embodiment, this heat shield piece 146 passes through arm 148 attached on the gyroaxis 150, this gyroaxis is by electric, pneumatic or hydraulic actuator rotates, this heat shield piece 146 can drawn or unloading in the cyclic process, turn to first position between the nethermost wafer in bearing 130 that heats and evaporimeter 106; And, also can just before the bottom of evaporimeter 106 enters chamber 102, remove this heat shield piece 146, or turn to be at least push away or adorn in the decline or terminal process of circulation, second position between this bearing and wafer not.Preferably, this gyroaxis 150 is installed or is fixed on and raises and reduce on mechanism's (not shown) of bearing 130 usefulness, thereby during by this process chamber 102, this heat shield piece 146 is rotate in place at this bearing top.In the dress cyclic process, this shielding part 146 can make heating element heater 112-1 be heated to desired temperature more quickly than alternate manner at assigned position.Equally, in the cyclic process of unloading, from the heat of this bearing heating element heater 112-1 radiation, this shielding part 146 can make wafer (particularly more near the wafer of this bearing) cooling by reflection.
Another kind of scheme is that this gyroaxis 150 can be installed or be fixed on another part of annealing device 100, and when axial and bearing 130 are synchronized with the movement or just think that this bearing descends fully, this heat shield piece 146 is turned to assigned position.
Fig. 4 is the bearing heating element heater 112-1 shown in Figure 3 and the schematic diagram of heat shield piece 146.Heat energy that its expression will be distributed from the bottom heating element heater or heat radiation reflected back bearing 130 and absorb from the heat energy or the heat radiation of lower wafer 108 radiation of a collection of or a pile wafer.Determine, use multiple different material (for example, metal, pottery, glass or polymer coating) separately or comprehensively, can obtain desirable characteristic, high reflectivity and high absorptivity.As an example, following table has been listed various suitable materials and relevant parameters.
Table 1
Material Absorptivity Reflectivity
Stainless steel ????0.2 ????0.8
The non-conducting quartz ????0.5 ????0.5
Polished aluminum ????0.03 ????0.97
Carborundum ????0.9 ????0.1
According to an embodiment, this heat shield piece 146 can be made by a kind of material (for example, carborundum (SiC), non-conducting quartz or stainless steel), a side surface polishing of this material, and another surface marks vestige, weares and teares or makes it coarse.Make a rough surface of heat shield piece 146 can significantly change its heat transfer character, particularly its reflectivity.
In another embodiment, this heat shield piece 146 can be made by two different material layers.Fig. 5 has the top layer 152 made by the material (for example SiC or opaque quartz) of high-absorbility and the schematic diagram of the heat shield piece 146 of the lower floor 154 of being made by the material or the metal (for example Pao Guang stainless steel or polished aluminum) of high reflectance.Though shown is thickness about equally, according to the specific requirement (for example, reducing because the thermal stress between the layer that the thermal coefficient of expansion difference causes) of heat shield piece 146, top layer 152 or lower floor 154 can have big relatively thickness.For example, in certain embodiments, lower floor 154 can be layer or film as thin as a wafer, and it is by depositing on the quartz plate that constitutes this top layer 152, and the metallic film of the polishing that forms or cover is made.These materials can whole constitute, or utilize (for example bonding agent or the securing member) interlocking of common device or couple together.
In yet another embodiment, this heat shield piece 146 also comprises an internal cooling channel 156, is used for further making this wafer 108 and bottom heating element heater 112-1 isolated.In a kind of form of this embodiment shown in Figure 6, cooling duct 156 forms between two different material layers 152 and 154.For example, cooling duct 156 can form in the non-conducting quartz layer 152 of high-absorbable by milling or any other suitable method, and then covers with metal level 154 or coating (for example titanium or aluminized coating).Another kind method is, cooling duct 156 can form in the two at metal level 154 or metal level and quartz layer 152.
Fig. 7 is for comprising heat shield piece 146, arm 148, the perspective view of an embodiment of a heat shield assembly 153 of gyroaxis 150 and actuator 155.
As shown in Figure 8, annealing device 100 also comprises a baffle plate 158, it can rotate or slide or move to position above this evaporimeter 106 with additive method, when the position that reduces fully, this process chamber 102 is separated with this bearing 130 of box lunch with outside or load port environment.For example, when this bearing 130 when dipping, this baffle plate 158 can slide into the position on carriage 106, and raises, to separate this process chamber 102.Another kind of scheme is, when this bearing 130 when dipping, can rotate or rotate this baffle plate 158 in this position carriage 106 above, then rising is to separate process chamber 102.In addition, when baffle plate 158 rotates to position on carriage 108, can around or rotate this baffle plate 158 with respect to screw or bar so that raise this baffle plate simultaneously, process chamber 102 is separated.
For the process chamber 102 (for example in the CVD system) of operate as normal under vacuum, this baffle plate 158 can form a vacuum seal on base plate 124, be depressurized to processing pressure or vacuum by this process chamber 102.For example, wish between each batch wafer successively, to make process chamber 102 step-downs, to reduce or eliminate the potential danger that processing environment pollutes.Preferably, utilize a large diameter sealing (for example o RunddichtringO) to form vacuum seal.And this baffle plate 158 comprises a plurality of aquaporins 160, with the cooling sealing.In the embodiment shown in fig. 8, this baffle plate 158 utilizes when this bearing 130 is used for the identical O RunddichtringO 132 of sealed crucible 142 during at raised position and seals.
For the annealing device 130 of process chamber 102 operate as normal under atmospheric pressure, baffle plate 158 is an insulating plug simply, and it can reduce the heat loss of process chamber bottom.An embodiment who realizes this point comprises and uses opaque quartz plate, below this plate or innerly can or not comprise a plurality of cooling ducts.
When this bearing 130 during in the position that reduces fully, baffle plate 158 moves to the position below process chamber 102, and it is one or more electric to utilize to raise then, and hydraulic pressure or pneumatic actuator (not shown) separate process chamber.Preferably, this actuator is the pneumatic actuator of the air of about 15～60 pounds of/square inch meterings of use (PSIG).This air has in annealing device 100 usually, is used to make pneumatic operated valve work.For example in a kind of form of present embodiment, baffle plate 158 can comprise the plate with a plurality of wheels that are connected with two side by galianconism or cantilever beam.At work, this plate or baffle plate 158 on two closed slides, are rolled into assigned position below process chamber 102.Block on the guide rail pivots this cantilever beam, and the motion of baffle plate 158 is converted to upward to encapsulation process chamber 102.
As shown in Figure 9, annealing device 100 also comprises a wafer rotation system 162 with magnetic couplings.In processing procedure, this wafer rotation system rotating support 104 and the evaporimeter 106 that has supporting wafer 108 thereon.In processing procedure, rotate wafer 108, can be by making any inhomogeneities equalization in heating element heater 112 and processing gas stream, form temperature and substance reaction profile (species reaction profile) on the uniform wafer, and improve the uniformity of (WIW) in the wafer.Generally, the speed that this wafer rotation system 162 can about 0.1～10 rev/min (RPM) is rotated wafer 108.
This wafer rotation system 162 comprises a driven unit or slew gear 164, this mechanism has a turning motor 166 (for example motor or air motor) and one and is enclosed in magnet 168 in the container (for example, the container of the polytetrafluoroethylene (PTFE) of annealing or stainless steel) of resist chemical.Be positioned at the steel loop 170 below the insulation block 140 of bearing 130 and have the driving shaft 172 of the block that insulate, rotation energy is sent to another magnet 174 above the insulation block that is positioned at the bearing top.This steel loop 170, driving shaft 172 and second magnet 174 also are enclosed in the container complex of a resistance to chemical attack.Be positioned at the magnet 174 of bearing 130 sides, by steel loop or magnet 176 magnetic couplings in crucible 142 and the supporting 104 of imbedding or being fixed in the process chamber 102.
Utilize this slew gear 164 of magnetic couplings by bearing 130, need not be placed on this mechanism in the processing environment or not need mechanical lead-in wire, thereby eliminate the potential source that leaks and pollute.In addition, this slew gear 164 is placed on the outside and, can reduces this mechanism and be exposed to wherein maximum temperature, therefore can improve the reliability and the working life of wafer rotation system 162 with a certain distance from process chamber.
Except above-mentioned, this wafer rotation system 162 also can comprise one or more sensor (not shown)s, with the suitable magnetic couplings between the magnet 174 of the tram that guarantees evaporimeter 106 and the steel loop in process chamber 102 or magnet 176 and bearing 130.The sensor or the evaporimeter location verification sensor of relative position of determining evaporimeter 106 is particularly useful.In one embodiment, this evaporimeter location verification sensor is included in a sensor ledge (not shown) on this evaporimeter 106 and is positioned at optics or laser sensor below this base plate 124.At work, after handling wafer 108, this bearing 130 is reduced about 3 inches, to this base plate 124.This wafer rotation system 162 is accepted instruction herein, rotates this evaporimeter 106, till the ledge that can see this evaporator sensor.Then, 162 operations of wafer rotation system are aimed at evaporimeter, can unload lower wafer 108.After this, with this evaporimeter be reduced to adorn/unload the height.Behind initial inspection, only with position from mark sensor checking evaporimeter.
As shown in figure 10, preferably in annealing device 100, use improved injector 216.This injector 216 is distributed or intersects (X) flow injectors 216-1, wherein, handle gas or steam and flow through the surface of wafer with the laminar flow form, discharge in exhaust outlet the process chamber pipeline 120 from opposition side or the groove 182 again by the injector holes on the side of wafer 108 or aperture 180.X-stream injector 216-1 by improve handle gas or steam previous to upper reaches or the distribution on the flow structure downwards, can improve wafer 108 in a collection of wafer 108 to wafer uniformity.
In addition, X-stream injector 216 also can have other purposes, comprises spraying the cooling gas (for example helium, nitrogen, hydrogen) that is used for carrying out the forced convertion cooling between wafer 108.Though wafer 108 be placed on a pile or a collection of bottom or top and be placed in the middle of wafer, with previous to the upper reaches or downwards flow structure relatively use X-stream injector 216 can make the cooling between the wafer 108 more even.Preferably, size, shape and the position of the aperture 180 of this injector 216 can form Sprayable, and this will promote the compulsory convection current cooling between the wafer 108 and can not produce big thermograde on wafer.
Figure 11 is the cross-sectional side view of the part of annealing device 100 shown in Figure 10, and its expression injector aperture 180 is with respect to the part of this chamber lining 120 and air discharge duct 182 part with respect to wafer 108.
Figure 12 is the plane of the part of the annealing device shown in Figure 10 100 got along the A-A line of Figure 10, its expression according to an embodiment from main and the aperture 180-1 of auxiliary ejector 184,186 and the laminar gas flow that 180-2 comes out, on the wafer 108 of a signal, flow, and flow to air discharge duct 182-1 and 182-2.Should be noted that the position of air discharge duct 182 shown in Figure 10 has been departed from air discharge duct 182-1 shown in Figure 12 and the position of 182-2 for expression air discharge duct and injector 216-1 in a cross-sectional view of annealing device.It shall yet further be noted that injector 184,186 and air discharge duct 182-1 and 182-2 are exaggerated with respect to the size of wafer 108 and chamber lining 120 in order to represent that more clearly gas flows to air discharge duct from injector.
And for example shown in Figure 12, for before reaching wafer, make and handle gas or vapor mixing, beginning will be handled gas or evaporation and deflect from wafer 108 and guide lining 120 into.For example in order to form multicomponent film or layer, this structure of aperture 180-1 and 180-2 is useful especially for the processing or the prescription of each the introducing differential responses thing from main and auxiliary ejector 184,186.
Figure 13 is another plane of the part of the annealing device shown in Figure 10 100 got along the A-A line of Figure 10, its expression is come out according to the aperture 180 from main and auxiliary ejector 184,186 of another embodiment, on the wafer 108 of a signal to another gas flow channel of air discharge duct 182.
Figure 14 is another plane of the part of the annealing device shown in Figure 10 100 got along the A-A line of Figure 10, its expression is come out according to the aperture 180 from main and auxiliary ejector 184,186 of another embodiment, on the wafer 108 of a signal to another gas flow channel of air discharge duct 182.
Figure 15 is another plane of the part of the annealing device shown in Figure 10 100 got along the A-A line of Figure 10, its expression is come out according to the aperture 180 from main and auxiliary ejector 184,186 of another embodiment, on the wafer 108 of a signal to another gas flow channel of air discharge duct 182.
Figure 16 is the cross-sectional view according to the two or more annealing devices 100 to upper reaches injector 116-1 and 116-2 of having of another embodiment.In this embodiment, from having accordingly, upwards flow and by wafer 108, the gas of use is from air discharge duct 182 discharges at lining 120 tops at the processing injector 116-1 of the output aperture of process chamber 102 bottoms and processing gas or the steam that 116-2 enters.Also represent an ejector system that upwards flows among Fig. 1.
Figure 17 is the cross-sectional view to the annealing device 100 of dirty ejector system of having according to another embodiment.In this embodiment,, flow downward, and by wafer 108, the gas of use is from air discharge duct 182 discharges of the bottom of lining 120 from having processing gas or the steam that flows at the processing injector 116-1 and the 116-2 of the corresponding aperture on process chamber 102 tops.
Favourable, injector 116,216 and/or lining 120 can be changed or exchange with other injectors and lining rapidly and easily, and it has the different point that sprays and discharge processing gas from treatment region 128.Those skilled in the art will know that, by in process chamber 102, make flow pattern change to Fig. 1 and shown in Figure 16 upwards streamed rapidly and easily from cross flow one form shown in Figure 10, or shown in Figure 17 streamed downwards, the embodiment of X-flow injectors 216 then shown in Figure 10 can increase the flexible degree of processing.By using easy-on injector assembly 216 and lining 120, the geometry that flows is converted to the upper reaches or to dirty from cross flow one, can accomplish this point.
Injector 116,216 and lining 120 can be the part that separates, and perhaps this injector can make a single-piece with lining integral body.The embodiment in back often changes the application scenario of process chamber 102 structures in hope, is useful especially.
The method of work or the process of annealing device 100 are described with reference to Figure 18.Figure 18 is the flow chart of the step of the method for expression heat treatment a collection of wafer 108, and wherein, each wafer in this batch wafer can be fast and is heated to temperature desired equably.In the method, bearing 130 reduces, and moves heat shield piece 142 make heat from bottom heating element heater 112-1 reflected back bearing 130 when bearing 130 reduces, and keeping its temperature, and makes the wafer 108 that disposes completely cut off (step 190).In addition, make baffle plate 158 move to sealing or separate process chamber 102 (step 192), and electric power is added on heating element heater 112-2, the 112-3, begin process chamber 102 is preheated to or remains on a centre or the idle running temperature (step 194).Carriage or evaporimeter 106 that new wafer 108 is housed are placed on the bearing 130 (step 196).This bearing 130 is increased to this evaporimeter in treatment region 128, removes baffle plate 158 and heat shield piece 142 simultaneously, and bottom heating element heater 112-1 is heated up so that wafer is preheated to a medium temperature (step 197).Preferably before evaporimeter 106 is placed in the treatment region 128, remove this heat shield piece 142.Fluid (for example handling gas or steam) is sent into by a plurality of jets 180 on the side of wafer 108 (step 198).Fluid is from jet 180, flow to the outlet 182 (step 199) that is positioned at respect on the lining 120 on the opposite side of the wafer of jet through the surface of wafer 108.In addition, optionally, by this bearing mechanical energy is coupled to this carriage or evaporimeter 106 in the magnetic couplings mode, this carriage of reorientation in wafer heat treatment process (step 200), can be in a collection of wafer 108 processes of heat treatment, evaporimeter 106 is rotated, with the heat treated uniformity of further raising in treatment region 128.
Referring now to Figure 19 method of work or process according to the annealing device 100 of another embodiment are described.Figure 19 is the flow chart of the step of an embodiment of the method for a collection of wafer 108 of expression heat treatment in carriage.In this method, a device 100 with process chamber 102 is provided, the size of this process chamber and volume are haply unlike holding the carriage 106 necessary big (not protecting heater) that is keeping wafer 108.Bearing 130 is descended, and will keep the evaporimeter 106 of wafer 108 to be placed on (step 202) on the bearing.Rising bearing 130 inserts evaporimeter in the process chamber 102, simultaneously pre-108 to medium temperatures (step 204) of thermal bimorph.Electric power is added in each all near the roof 134 of process chamber 102, on heating element heater 112-1, the 112-2 of at least one in sidewall 136 and the diapire 138, the 112-3, begins heat treated chamber (step 206).In addition, optionally, regulate the power at least one heating element heater independently,, be formed on the environment (step 208) of the isothermal haply of desired temperature so that in the treatment region 128 in process chamber 102.When heat treatment wafer 108 and when keeping the desired temperature of treatment region 128, reduce bearing 130, and heat shield piece 142 moved to isolate the wafer 108 process, and with heat from bottom heating element heater 112-1 reflected back bearing 130, the position (step 210) that keeps its temperature.In addition, optionally, baffle plate 158 is moved to the position that seals or separate process chamber 102, and electric power is added on heating element heater 112-2, the 112-3, to keep the temperature (step 212) of process chamber.Another evaporimeter of removing evaporimeter 106 (step 214) and new a collection of wafer to be processed will be housed from bearing 130 is placed on (step 216) on the bearing again.Reorientation or remove baffle plate 158 (step 218), and extraction or reorientation heat shield piece, with 108 to medium temperatures of the wafer of preheating in evaporimeter 106, bearing 130 simultaneously raises, evaporimeter is inserted in the process chamber 102, new a collection of wafer is heat-treated (step 220).
With common systematic comparison, above-mentioned annealing device 100 can will be handled or reduce about 75% circulation timei.For example, common annealing device in enormous quantities can be handled 100 finished product wafers about 232 minutes (comprising preliminary treatment and post processing time).Annealing device of the present invention can be handled 25 finished product wafers 108 of small lot equally in about 58 minutes.
The explanation of above-mentioned specific embodiment is not a limitation of the present invention just in order to illustrate.Consider that above-mentioned explanation can do many transformations, improvement and variation within the scope of the invention rather than the present invention is confined in the above-mentioned form.Scope of the present invention by appending claims and etc. value document determine.

Claims (49)

1. a heat treatment is contained in the device of a plurality of substrates in the carriage, and this device comprises:
One has a roof, a sidewall and a process chamber that comprises the diapire of bearing;
A heating source that has a plurality of heating element heaters, a plurality of substrates are heat-treated; In each heating element heater in these a plurality of heating element heaters close roof, sidewall and the diapire of this process chamber at least one; And at least one is in this bearing in these a plurality of heating element heaters; With
Can insert at least one in these a plurality of heating element heaters in bearing and be contained in a removable heat shield piece between the substrate on the carriage.
2. device as claimed in claim 1, wherein this heat shield piece comprises that towards first surface that is contained in the substrate in this carriage, this first surperficial absorptivity is at least 0.5.
3. device as claimed in claim 2, wherein this heat shield piece comprises second surface towards this bearing, the reflectivity on this second surface is at least 0.8.
4. device as claimed in claim 3, wherein this heat shield piece also is included in a cooling duct between first and second surfaces.
5. device as claimed in claim 1, wherein this heat shield piece comprises a reflecting surface and sorbent surface of being made by the material of selecting in the following material group: stainless steel, quartz, aluminium and carborundum.
6. device as claimed in claim 1, wherein this heat shield piece comprises having towards the reflecting surface of the polishing of this bearing with towards the stainless steel of the sorbent surface that does not have polishing of the substrate on carriage.
7. the device of a plurality of substrates of heat treatment, it comprises:
A hot processing chamber;
Have a release position, one with respect to the detent position of this process chamber and a bearing of a change location between open and detent position with respect to this process chamber;
A distribution heating source, it can produce haply heat uniformly at bearing during at detent position in the treatment region in this process chamber;
A heat shield piece; With
A locator that is connected with this heat shield piece; It can removably be placed on this heat shield piece between this bearing and the process chamber being this bearing during at this change location at least.
8. a heat treatment is contained in the device of a plurality of substrates in the carriage, and this device comprises:
One has a roof, the process chamber of a sidewall and a diapire;
Have a plurality of heating element heaters, the heating source that a plurality of substrates are heat-treated; In each heating element heater in these a plurality of heating element heaters close roof, sidewall and the diapire of this process chamber at least one; With
The reorientation system of a magnetic couplings, it can be in the process of these a plurality of substrates of heat treatment, and the carriage of a plurality of substrates is equipped with in reorientation; Wherein the mechanical energy of this carriage of reorientation is coupled to this carriage by diapire in the magnetic couplings mode.
9. device as claimed in claim 8, wherein this diapire comprises the movable bearing that has in these a plurality of heating element heaters at least one; And the mechanical energy of this carriage of reorientation does not move in described a plurality of heating element heaters in this movable support at least one haply, is coupled in the magnetic couplings mode by this movable support.
10. device as claimed in claim 8, wherein in these a plurality of substrate processes of heat treatment, the system that reorientates of this magnetic couplings turns the carriage that a plurality of substrates are housed.
11. device as claimed in claim 10, wherein the speed that the reorientation system of this magnetic couplings can about 0.1～10 rev/min (RPM) is rotated this carriage.
12. device as claimed in claim 8, wherein the reorientation system of this magnetic couplings can make this carriage vibration.
13. device as claimed in claim 8, wherein this carriage comprises that the mechanical energy of this carriage of reorientation can pass through diapire, a magnetic part that is coupled in the magnetic couplings mode.
14. device as claimed in claim 8, wherein it also comprise one in process chamber carriage put thereon supporting; And this supporting comprises the magnetic part that the mechanical energy of this carriage of reorientation is coupled in the magnetic couplings mode by this diapire.
15. device as claimed in claim 8 does not wherein need to use the movable lead-in wire that feeds process chamber, makes the mechanical energy of this reorientation carriage be coupled to this carriage in the magnetic couplings mode by diapire.
16. the device of a plurality of substrates of heat treatment, it comprises:
Form a process chamber cover of a hot processing chamber in inside;
Be placed in this process chamber, be used for being equipped with a bearing bracket of the carriage of a plurality of substrates in the heat treatment process supporting;
A distributed heating source is used in the treatment region of heat treatment process in process chamber, produces haply heat uniformly; With
A reorientation system, it is used at this carriage of heat treatment process reorientation by this process chamber cover and this bearing bracket magnetic couplings; Wherein this substrate reorientation in treatment region.
17. the device of the interior a plurality of substrates that carried of heat treatment carriage, this device comprises:
Has roof, a sidewall and a process chamber that comprises the diapire of a movable support; This bearing can descend and raise, and the carriage of adorning a plurality of substrates can be inserted this process chamber and takes out from this process chamber;
A heating source; It has a plurality of heating element heaters near this process chamber, is used for a plurality of substrates of heat treatment; In these a plurality of heating element heaters at least one is in this movable support; With
A baffle plate; When this bearing when dipping, can move in this position above carriage, this process chamber is separated.
18. device as claimed in claim 17, wherein it also comprises a pumping system that before processing process chamber is vacuumized; And salable this process chamber of this baffle plate when dipping, can make this pumping system that this process chamber is vacuumized with this bearing of box lunch.
19. device as claimed in claim 17, wherein this baffle plate comprises a cooling duct.
20. device as claimed in claim 17, wherein when this bearing when dipping, this baffle plate can rotate to the position on carriage; And raise this process chamber is separated.
21. device as claimed in claim 17, wherein when this bearing when dipping, this baffle plate is slidably to position on carriage; And raise this process chamber is separated.
22. a device that is used for a plurality of substrates of heat treatment, it comprises:
An inner process chamber cover that forms a process chamber;
Be placed on a baffle plate on this process chamber cover;
Has release position, with respect to the detent position of this process chamber and a bearing of a change location between this opening and detent position with respect to this process chamber; This bearing can move by baffle plate;
A distribution heating source, it can produce haply heat uniformly at bearing during at detent position in the treatment region in this process chamber; With
An actuator that is connected with this baffle plate, when this bearing in sealing with during change location, can open this baffle plate, and, can close this baffle plate when this bearing during in the release position.
23. a heat treatment is contained in the device of a plurality of substrates in the carriage, this device comprises:
One has a roof, the process chamber of a sidewall and a diapire;
Have a plurality of heating element heaters, the heating source that a plurality of substrates are heat-treated; In each heating element heater in these a plurality of heating element heaters close roof, sidewall and the diapire of this process chamber at least one; With
Carriage and the roof of process chamber and the lining that sidewall separates that a plurality of substrates will be housed; With
The guiding fluid flows through a cross flow one spraying system on the surface of each substrate in these a plurality of substrates; This cross flow one spraying system comprises:
A cross flow one injector; It has a plurality of jets of arranging with respect to a plurality of substrates that carried in the carriage, and fluid can flow on a side of these a plurality of substrates by it; With
A plurality of exhaust outlets in this lining; This exhaust outlet is arranged with respect to a plurality of substrates that are contained in this carriage, and fluid is directly flowed on the surface of these a plurality of substrates.
24. device as claimed in claim 23, wherein these a plurality of jets are before flowing on fluid each substrate surface in these a plurality of substrates, and the guiding fluid flows on this lining.
25. device as claimed in claim 23, wherein this cross flow one injector comprises first injector and second injector, and each injector has a plurality of jets of arranging with respect to a plurality of substrates that are contained in this carriage.
26. device as claimed in claim 25, wherein a plurality of jets of this first injector and second injector at fluid before flowing on the surface of each substrate of these a plurality of substrates, the guiding fluid flows on this lining, like this, reactant in the fluid of being sent into by first injector and second injector mixed before flowing through on the surface of each substrate of these a plurality of substrates at fluid.
27. device as claimed in claim 25, wherein a plurality of jets of first injector and second injector are disposed opposite to each other, and with before second injector, guide the fluid that comes out from a plurality of jets of this first injector to flow; With before first injector, guiding is flowed from the fluid that a plurality of jets of this second injector come out;
Like this, the reactant in the fluid of being sent into by first injector and second injector mixes before flowing through on the surface of each substrate in these a plurality of substrates.
28. the device of a plurality of substrates of heat treatment, it comprises:
Form a process chamber cover of a hot processing chamber in inside;
A distributed heating source is used in the treatment region of heat treatment process in process chamber, produces haply heat uniformly; With
A gas ejector, its a plurality of gas ejector mouths are near treatment region; With
A gas discharge outlet, its a plurality of gas discharge outlets are general near treatment region, and are relative with the gas ejection ports by this treatment region.
29. a heat treatment is contained in the method for a plurality of substrates on the carriage in the treatment region of process chamber, this process chamber has roof, sidewall and diapire, and this method comprises the following steps:
Heat this treatment region by a thermal source; This thermal source has a plurality of heating element heaters, and each element in these a plurality of heating element heaters is near the roof of this process chamber, at least one in sidewall and the diapire;
The carriage that a plurality of substrates are housed is inserted this treatment region; With
A plurality of jets by arranging with respect to a plurality of substrates that are contained in this carriage send fluid on a side of these a plurality of substrates; With
Make lip-deep fluid, flow to and will carriage and the roof of process chamber and a plurality of exhaust outlets of the lining that sidewall separates of a plurality of substrates be housed from these a plurality of jets at these a plurality of substrates; This exhaust outlet is with respect to a plurality of substrate settings that are contained in this carriage.
30. method as claimed in claim 29, wherein the bottom of this process chamber comprises a bearing, and this bearing has at least one in a plurality of heating element heaters; This bearing can reduce and raise, and a collection of substrate that is carried in the carriage is inserted in this process chamber; The step of the carriage that a plurality of substrates are housed being inserted process chamber comprises the following steps:
This carriage is placed on the bearing; With
This bearing that raises inserts the carriage that a plurality of substrates are housed in this treatment region.
31. method as claimed in claim 30, this bearing that wherein raises, the step that the carriage that a plurality of substrates are housed is inserted treatment region comprises simultaneously the step that will a plurality of substrates in this carriage be preheated to a medium temperature.
32. method as claimed in claim 30, wherein this bearing comprises a movable shielding part, and this bearing is returned in the heat reflection that at least one heating element heater from these a plurality of heating element heaters can be come out, to keep its temperature; This method moves to at least one heat of coming out from these a plurality of heating element heaters this barricade shield part before also being included in the carriage insertion process chamber that a plurality of substrates will be housed, and this bearing of reflected back keeps the step of its temperature.
33. method as claimed in claim 30, wherein this device also comprises a baffle plate, can when this bearing when dipping, move to this position above carriage, process chamber is separated; This method also comprises, when this bearing when dipping, this baffle plate carriage that moves separates process chamber and keep the step of its temperature.
34. method as claimed in claim 30, wherein this device also comprises the reorientation system of a magnetic couplings, and it can be in the process of these a plurality of substrates of heat treatment, and the carriage of a plurality of substrates is equipped with in reorientation; This method also is included in a plurality of substrate processes of heat treatment, do not use movable lead-in wire and do not move in a plurality of heating element heaters in this bearing at least one haply, mechanical energy is passed through this bearing magnetic couplings to this carriage, can be in process chamber with this carriage reorientation;
Substrate on the carriage in a plurality of treatment regions that are contained in process chamber; This process chamber has roof, sidewall and diapire.
35. the heat treatment that is shaped again is contained in the method for the device of a plurality of substrates on the carriage in the treatment region of the process chamber that is made of container handling and base plate, this device also comprises first injector and first lining; This first injector has at least one eductor ports, and it is located on the primary importance with respect to the substrate that is carried in a plurality of carriages, and fluid can be sent into by it, handles this a plurality of wafers; This first lining separates described at least one injector and carriage and container handling that a plurality of substrates are housed; This lining has first locational at least one exhaust outlet that is arranged in respect to being contained in a plurality of substrates on the carriage; This method comprises the following steps:
Separate container handling and base plate;
Take out first injector from this process chamber;
Take out first lining from process chamber;
Second lining that will have at least one exhaust outlet is installed in the process chamber;
Second injector that will have at least one eductor ports is installed in the process chamber; With
Wherein second injector and second lining have than first injector and first lining, with respect to a plurality of at least one eductor ports and exhaust outlets of arranging on the diverse location of the substrate on the carriage that are contained in.
36. method as claimed in claim 35, wherein first injector and first lining integral body are made, and the step that this first injector is taken out from process chamber also comprises the step that first lining is taken out from process chamber.
37. method as claimed in claim 35, wherein second injector and second lining integral body are made, and second injector is installed in step in the process chamber also comprises second lining is installed in step in the process chamber.
38. method as claimed in claim 35, wherein second injector is installed in the process chamber and second lining is installed in step in the process chamber and comprise second injector is installed in the process chamber, with second lining is installed in the process chamber, form the liquid form from following group, select:
Upwards flow, flow downward and cross flow one.
39. a heat treatment is contained in the device of a plurality of substrates in the interior carriage of treatment region, this carriage that substrate is housed has predetermined shape and volume, and this device comprises:
A process chamber cover, its inside form a hot processing chamber and are included in the interior treatment region of this process chamber; With
A heating source, it is distributed in the inside of this process chamber cover haply, is used for setting up the environment of isothermal haply at treatment region;
Wherein this process chamber inside is similar to predetermined shape haply; With
The volume of this process chamber is corresponding with this predetermined volume haply.
40. a heat treatment is contained in the device of a plurality of substrates on the carriage, this device comprises:
A process chamber with a roof, a sidewall and a diapire;
Heating source with a plurality of heating element heaters of roof, sidewall and diapire near this process chamber; This heating source can form the environment of isothermal haply in the treatment region of carriage of a plurality of substrates is equipped with in placement, with these a plurality of substrates of heat treatment; With
Wherein the size of this process chamber can be selected to such an extent that can seal one haply unlike holding the necessary capacious volume of the carriage that a plurality of substrates are housed.
41. device as claimed in claim 40, wherein the size of this process chamber can be selected to such an extent that can seal one haply unlike holding a big volume of the necessary volume of the carriage that a plurality of substrates are housed 125%.
42. device as claimed in claim 40, wherein it also comprises a controller, and it can regulate at least one the power of supplying with these a plurality of heating element heaters independently, so that form the environment of isothermal haply in treatment region.
43. device as claimed in claim 40, wherein the diapire of this process chamber comprises a movable support that has in these a plurality of heating element heaters at least one, this movable support liftable inserts the neutralization of this process chamber and takes out from process chamber so that the carriage of these a plurality of substrates will be housed.
44. device as claimed in claim 40, wherein this heating source do not use this above treatment region and below, near the protection heater of the sidewall of this process chamber, and in treatment region, form the environment of isothermal haply.
45. a heat treatment is contained in the method for a plurality of substrates on the interior carriage of treatment region, this carriage that substrate is housed has predetermined shape and volume, and this method comprises:
The carriage that substrate is housed is put into a process chamber cover, and the inside of this cover is similar to predetermined shape usually, and its volume is corresponding with predetermined volume usually; With
From this process chamber cover inside heat is added on the substrate;
Wherein this substrate remains under the identical haply temperature.
46. a heat treatment is contained in the method for a plurality of substrates on the carriage, this method comprises the following steps:
The carriage insertion that a plurality of substrates are housed is had in the process chamber of roof, sidewall and diapire, and the volume of this process chamber is big unlike holding the necessary volume of the carriage that a plurality of substrates are housed haply; With
From a thermal source heat treated chamber, this thermal source has a plurality of heating element heaters, and at least one in each heating element heater close roof, sidewall and the diapire of process chamber is so that be formed on the environment of the isothermal haply of desired temperature in the treatment region of process chamber;
Thereby each substrate in these a plurality of substrates can be fast and is heated to temperature desired equably.
47. method as claimed in claim 46 wherein comprises at least one the bearing in these a plurality of heating element heaters in the bottom of this process chamber, this bearing liftable will insert at a collection of substrate of carriage in the process chamber; The step that the carriage that a plurality of substrates are housed is inserted in the process chamber comprises the following steps:
This carriage is placed on the bearing; With
This bearing that raises, the carriage that a plurality of substrates will be housed inserts in the process chamber, a plurality of substrates to the medium temperature of preheating simultaneously in this carriage.
48. comprising, method as claimed in claim 46, the step that wherein heats this process chamber can regulate at least one the power of supplying with these a plurality of heating element heaters independently, so that in treatment region, form the step of the environment of isothermal haply.
49. method as claimed in claim 46, wherein it is further comprising the steps of, uses thermal source to continue the heat treated chamber simultaneously, to maintain the isothermal environment haply under the desired temperature in the treatment region:
When this batch of heat treatment substrate, take out the carriage that this batch substrate is housed from process chamber; With
Another batch substrate that is contained in another carriage is inserted in the process chamber, with this batch of heat treatment substrate;
Thereby each the piece substrate in each batch substrate can be fast and is heated to temperature desired equably, and handles under this temperature.
CN 03806135 2002-07-15 2003-07-10 Heat treatment system and formable vertical chamber Pending CN1643322A (en)

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