CN1619415A - 用于旋涂抗反射涂层/硬掩膜材料的含硅组合物 - Google Patents
用于旋涂抗反射涂层/硬掩膜材料的含硅组合物 Download PDFInfo
- Publication number
- CN1619415A CN1619415A CN200410080378.3A CN200410080378A CN1619415A CN 1619415 A CN1619415 A CN 1619415A CN 200410080378 A CN200410080378 A CN 200410080378A CN 1619415 A CN1619415 A CN 1619415A
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- CN
- China
- Prior art keywords
- composition
- layer
- pattern
- acid producing
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/679,782 | 2003-10-06 | ||
US10/679,782 US7270931B2 (en) | 2003-10-06 | 2003-10-06 | Silicon-containing compositions for spin-on ARC/hardmask materials |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1619415A true CN1619415A (zh) | 2005-05-25 |
CN100426140C CN100426140C (zh) | 2008-10-15 |
Family
ID=34394235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100803783A Active CN100426140C (zh) | 2003-10-06 | 2004-09-29 | 用于旋涂抗反射涂层/硬掩膜材料的含硅组合物 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7270931B2 (zh) |
JP (1) | JP4086830B2 (zh) |
CN (1) | CN100426140C (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101042533B (zh) * | 2006-03-22 | 2010-05-19 | 第一毛织株式会社 | 有机硅烷硬掩模组合物以及采用该组合物制造半导体器件的方法 |
CN101370854B (zh) * | 2006-03-13 | 2012-02-29 | 第一毛织株式会社 | 有机硅烷聚合物和含有该聚合物的硬掩模组合物以及使用有机硅烷硬掩模组合物制造半导体装置的方法 |
CN101319314B (zh) * | 2007-06-06 | 2012-05-30 | 富士胶片株式会社 | 薄层金属膜材料及其制造方法 |
CN102498440A (zh) * | 2009-09-16 | 2012-06-13 | 日产化学工业株式会社 | 含有具有磺酰胺基的硅的形成抗蚀剂下层膜的组合物 |
US8273519B2 (en) | 2006-11-21 | 2012-09-25 | Cheil Industries, Inc. | Hardmask composition and associated methods |
CN101501571B (zh) * | 2006-08-14 | 2013-08-21 | 道康宁公司 | 使用显影溶剂制备图案化膜的方法 |
CN101030037B (zh) * | 2006-02-28 | 2013-12-11 | 罗门哈斯电子材料有限公司 | 用来与外涂的光刻胶一起使用的涂料组合物 |
CN103517956A (zh) * | 2011-03-10 | 2014-01-15 | 道康宁公司 | 用于抗反射涂层的聚硅烷硅氧烷树脂 |
CN104614942A (zh) * | 2015-01-08 | 2015-05-13 | 苏州瑞红电子化学品有限公司 | 一种紫外正性光刻胶及其高耐热成膜树脂 |
CN110488571A (zh) * | 2006-04-11 | 2019-11-22 | 罗门哈斯电子材料有限公司 | 用于光刻的涂料组合物 |
Families Citing this family (34)
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KR100804873B1 (ko) | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 sog 반사방지 코팅 |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
CN1606713B (zh) | 2001-11-15 | 2011-07-06 | 霍尼韦尔国际公司 | 用于照相平版印刷术的旋涂抗反射涂料 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
JP5062420B2 (ja) * | 2005-05-24 | 2012-10-31 | 日産化学工業株式会社 | ポリシラン化合物を含むリソグラフィー用下層膜形成組成物 |
US7678529B2 (en) | 2005-11-21 | 2010-03-16 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
CN101322074B (zh) * | 2005-12-06 | 2013-01-23 | 日产化学工业株式会社 | 用于形成光交联固化的抗蚀剂下层膜的含有硅的抗蚀剂下层膜形成用组合物 |
KR101439295B1 (ko) * | 2006-11-28 | 2014-09-11 | 닛산 가가쿠 고교 가부시키 가이샤 | 방향족 축합환을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US7736837B2 (en) * | 2007-02-20 | 2010-06-15 | Az Electronic Materials Usa Corp. | Antireflective coating composition based on silicon polymer |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
JP2010519362A (ja) * | 2007-02-26 | 2010-06-03 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | シロキサンポリマーの製造方法 |
US8524441B2 (en) | 2007-02-27 | 2013-09-03 | Az Electronic Materials Usa Corp. | Silicon-based antireflective coating compositions |
EP1978407A1 (en) * | 2007-03-28 | 2008-10-08 | CRF Societa'Consortile per Azioni | Method for obtaining a transparent conductive film |
KR100876816B1 (ko) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
EP2196854B1 (en) | 2007-09-11 | 2013-11-06 | Nissan Chemical Industries, Ltd. | Composition containing polymer having nitrogenous silyl group for forming resist underlayer film |
KR101647158B1 (ko) * | 2008-01-29 | 2016-08-09 | 브레우어 사이언스 인코포레이션 | 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정 |
EP2247665A2 (en) * | 2008-02-25 | 2010-11-10 | Honeywell International Inc. | Processable inorganic and organic polymer formulations, methods of production and uses thereof |
WO2009132023A2 (en) * | 2008-04-23 | 2009-10-29 | Brewer Science Inc. | Photosensitive hardmask for microlithography |
US8084185B2 (en) * | 2009-01-08 | 2011-12-27 | International Business Machines Corporation | Substrate planarization with imprint materials and processes |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US20110076623A1 (en) * | 2009-09-29 | 2011-03-31 | Tokyo Electron Limited | Method for reworking silicon-containing arc layers on a substrate |
US8455364B2 (en) * | 2009-11-06 | 2013-06-04 | International Business Machines Corporation | Sidewall image transfer using the lithographic stack as the mandrel |
US9209059B2 (en) * | 2009-12-17 | 2015-12-08 | Cooledge Lighting, Inc. | Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques |
TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP5956370B2 (ja) * | 2013-03-12 | 2016-07-27 | 信越化学工業株式会社 | 珪素含有下層膜材料及びパターン形成方法 |
US9578601B2 (en) | 2013-11-12 | 2017-02-21 | Qualcomm Incorporated | Methods and apparatus for reducing modem power based on a present state of charge of battery |
KR101667788B1 (ko) | 2013-12-31 | 2016-10-19 | 제일모직 주식회사 | 하드마스크 조성물 및 이를 사용한 패턴 형성 방법 |
JP6115514B2 (ja) * | 2014-05-01 | 2017-04-19 | 信越化学工業株式会社 | ネガ型レジスト材料及びパターン形成方法 |
KR20160029900A (ko) | 2014-09-05 | 2016-03-16 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
KR102354460B1 (ko) | 2015-02-12 | 2022-01-24 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
US10381481B1 (en) | 2018-04-27 | 2019-08-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer photoresist |
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DE3810247A1 (de) * | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | Lichtempfindliche beschichtungsmasse |
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JP2694097B2 (ja) | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
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JPH11983A (ja) * | 1997-06-12 | 1999-01-06 | Toyoda Gosei Co Ltd | 化粧成形品及びその製造方法 |
JP3955385B2 (ja) | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | パターン形成方法 |
US6087064A (en) | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6114085A (en) | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
JP3562569B2 (ja) * | 1999-08-18 | 2004-09-08 | 信越化学工業株式会社 | 架橋性ケイ素系高分子組成物並びに反射防止膜用組成物及び反射防止膜 |
US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6573196B1 (en) | 2000-08-12 | 2003-06-03 | Applied Materials Inc. | Method of depositing organosilicate layers |
JP3781960B2 (ja) * | 2000-09-29 | 2006-06-07 | 信越化学工業株式会社 | 反射防止膜材料およびパターン形成方法 |
TW576859B (en) * | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
-
2003
- 2003-10-06 US US10/679,782 patent/US7270931B2/en not_active Expired - Fee Related
-
2004
- 2004-09-29 CN CNB2004100803783A patent/CN100426140C/zh active Active
- 2004-10-04 JP JP2004291846A patent/JP4086830B2/ja active Active
-
2005
- 2005-10-31 US US11/263,430 patent/US7276327B2/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101030037B (zh) * | 2006-02-28 | 2013-12-11 | 罗门哈斯电子材料有限公司 | 用来与外涂的光刻胶一起使用的涂料组合物 |
CN101370854B (zh) * | 2006-03-13 | 2012-02-29 | 第一毛织株式会社 | 有机硅烷聚合物和含有该聚合物的硬掩模组合物以及使用有机硅烷硬掩模组合物制造半导体装置的方法 |
CN101042533B (zh) * | 2006-03-22 | 2010-05-19 | 第一毛织株式会社 | 有机硅烷硬掩模组合物以及采用该组合物制造半导体器件的方法 |
CN110488571A (zh) * | 2006-04-11 | 2019-11-22 | 罗门哈斯电子材料有限公司 | 用于光刻的涂料组合物 |
CN101501571B (zh) * | 2006-08-14 | 2013-08-21 | 道康宁公司 | 使用显影溶剂制备图案化膜的方法 |
US8273519B2 (en) | 2006-11-21 | 2012-09-25 | Cheil Industries, Inc. | Hardmask composition and associated methods |
CN101319314B (zh) * | 2007-06-06 | 2012-05-30 | 富士胶片株式会社 | 薄层金属膜材料及其制造方法 |
CN102498440A (zh) * | 2009-09-16 | 2012-06-13 | 日产化学工业株式会社 | 含有具有磺酰胺基的硅的形成抗蚀剂下层膜的组合物 |
CN102498440B (zh) * | 2009-09-16 | 2016-11-16 | 日产化学工业株式会社 | 含有具有磺酰胺基的硅的形成抗蚀剂下层膜的组合物 |
CN103517956A (zh) * | 2011-03-10 | 2014-01-15 | 道康宁公司 | 用于抗反射涂层的聚硅烷硅氧烷树脂 |
CN104614942A (zh) * | 2015-01-08 | 2015-05-13 | 苏州瑞红电子化学品有限公司 | 一种紫外正性光刻胶及其高耐热成膜树脂 |
Also Published As
Publication number | Publication date |
---|---|
CN100426140C (zh) | 2008-10-15 |
US7270931B2 (en) | 2007-09-18 |
JP4086830B2 (ja) | 2008-05-14 |
JP2005115380A (ja) | 2005-04-28 |
US20050074689A1 (en) | 2005-04-07 |
US7276327B2 (en) | 2007-10-02 |
US20060058489A1 (en) | 2006-03-16 |
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Effective date of registration: 20171102 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171102 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |