CN1594620A - 合金金丝及其制造方法 - Google Patents

合金金丝及其制造方法 Download PDF

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Publication number
CN1594620A
CN1594620A CNA2004100244303A CN200410024430A CN1594620A CN 1594620 A CN1594620 A CN 1594620A CN A2004100244303 A CNA2004100244303 A CN A2004100244303A CN 200410024430 A CN200410024430 A CN 200410024430A CN 1594620 A CN1594620 A CN 1594620A
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alloy
gold wire
earth metal
gold
weight
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刘光瑞
艾周平
毛松林
范红
杨向东
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Heraeus Zhaoyuan Precious Metal Materials Co Ltd
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Heraeus Zhaoyuan Precious Metal Materials Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

一种合金金丝及其制造方法，其组成成分为0.1～2％重量铜，0.001～0.1％重量的至少一种碱土金属族及稀有金属族中的元素，余量为金。其制造方法为将合金熔体通过连续拉铸炉拉伸成18～75μm的细金丝，并将该细丝退火。因而，该发明产品具有良好的导电性能、焊接性能、抗氧化性能，强度高、延伸率低，特别适合于大规模集成电路运用。

Description

合金金丝及其制造方法
本发明涉及一种适合体积小、容量大、强度高的大规模集成电路用和半导体分立器件键合用的合金金丝。
适用于大规模集成电路和半导体分立器件的连接导线，称为内引线或键合丝，是四大半导体产品基础材料之一，它必需具备良好的导电性能和稳定地机械参数，抗氧化耐腐蚀。直径通常在18-75μm范围以内，可按产品种类进行选择使用。
这种连接导线通常是由高纯度的金为主要材料配以ppm级微量元素合金化制成。随着科技的不断发展进步，企业对成本的控制日趋降低，同时产品逐渐向体积小容量大方向发展，要求金丝能够满足线径细而机械强度高的特性，同时满足导电性能要求。现在，国内只能生产高纯度金丝，它的硬度不高，生产中容易粘连。虽然发达国家如德国、日本发明了一些金-合金金丝，但他们添加的都是一些价格比较昂贵的稀有金属，如铂、锗、银、镁等。它们的导电性、化学稳定性等都很好，但在硬度、成本等方面都有缺陷。
本发明的目的就是提供一种掺加铜的金-合金金丝。要求它具有比高纯金丝更好的强度、延伸率等机械性能参数，此外，相对经济，质量优良。这种合金金丝既适用于连接导线，还可用来制造用于倒装技术的球型焊接。
本发明的目的是这样实现的：一种合金金丝，其特征在于由0.1-2％重量铜、0.0001-0.1％重量的至少一种碱土金属族及稀土金属族中的元素、余量为金组成。
本发明还在于：铜含量为0.7-1.5％重量；碱土金属及/或稀土金属的含量为0.001-0.01％重量；有的还含有0.1-1.0％重量的铂、钯、或铂和钯的一种；碱土金属为铍、镁或钙中的一种或两种以上；稀土金属为铈。
一种制造权利要求1-6中之一的合金金丝的制造方法，其特征在于熔融金-合金，将合金熔体通过连续拉铸炉拉伸成具有连接用导线的一般直径的金丝，并将该金丝退火。熔融合金被铸成圆形截面的铸件，经过拉拔冷加工拉制成直径为18～75μm的细丝，最后再进行相应的热处理和绕线。
本发明具有作连接导线用的通常直径的细导线具有作连接导线用的所需性能。特别是合适的电导性与伸长有关的优良强度(见下表比较)。令人惊喜地是金-铜-合金及碱土金属和稀土金属的合金金丝，与由高纯金(≥99.99％)制成的导线对比，在同样受力情况下，本发明的合金金丝具有较高的强度，特别值得一提的是，加入碱土金属或稀土金属制成合金后明显地降低了由于灼热引起的强度损失。合金金丝的良好强度、延伸率对达到良好键合质量是非常重要的。
合金金丝与高纯金丝机械性能比较
直径μm 延伸率       断裂负荷(强度)
  高纯金丝   合金金丝
    18     2.0～4.0     ＞4     ＞5
    20     2.0～6.0     ＞5     ＞6
    23     2.0～7.0     ＞7     ＞9
    25     2.0～8.0     ＞9     ＞11
    30     3.0～8.0     ＞13     ＞17
    38     3.0～10.0     ＞21     ＞26
    50     3.0～12.0     ＞34     ＞44
本发明的合金金丝，由于它所具有的优越性能，特别是用作连接导线是有利的，还可用于在发展中的高频连接及技术，以及在倒装技术中用来制造接触突缘。
实施例1：以生产200千克合金金丝为例。取1.4千克铜，0.02千克的碱土金属族，198.58千克金。碱土金属族为铍、镁、钙中的一种或两种以上。制造时选将铜、碱土金属族放入熔炼炉中溶炼，再将熔炼的合金加入金中溶炼，经溶炼拉制出7mm的合金棒，再经细拉机冷拔，最后拉制成18-75μm的合金金丝，再经300～700℃的温度退火，退火后绕线包装入库。
实施例2：以生产200千克合金金丝为例。取3千克铜，0.02千克的稀土金属族，196.98千克金。稀土金属族为铈。其制造方法同实施例1。
实施例3：以生产200千克合金金丝为例。取2千克铜，0.01千克碱土金属族与稀土金属合金，0.1千克的铂、钯、铂和钯中的一种，197.89千克金。碱土金属可以为铍、镁、钙中的一种或两种以上。稀土金属族为铈，亦可以是铍与铈、镁与铈、钙与铈其中之一或两种以上的碱土金属与铈的合金。其制造方法同实施例1。

Claims (9)

1.一种合金金丝，其特征在于由0.1-2％重量铜、0.0001-0.1％重量的至少一种碱土金属族及稀土金属族中的元素、余量为金组成。
2.根据权利要求1所述的合金金丝，其特征在于所述的铜含量为0.7-1.5％重量。
3.根据权利要求1或2所述的合金金丝，其特征在于所述的碱土金属及/或稀土金属的含量为0.001-0.01％重量。
4.根据权利要求3所述的合金金丝，其特征在于还含有0.1-1.0％重量的铂、钯/或铂和钯的一种。
5.根据权利要求1或3所述的合金金丝，其特征在于所述所含碱土金属为铍、镁或钙中的一种或两种以上。
6.权利要求1或3中之一的合金金丝，其特征在于所含的稀土金属为铈。
7.一种制造权利要求1-6中之一的合金金丝的制造方法，其特征在于熔融金—合金，将合金熔体通过连续拉铸炉拉伸成具有连接用导线的一般直径的金丝，并将该金丝退火。
8.根据权利要求7中所述的合金金丝制造方法，其特征在于熔融合金被铸成圆形截面的铸件。
9.根据权利要求7或8的所述的合金金丝制造方法，其特征在于合金金丝在300-700℃下退火。
CNA2004100244303A 2004-07-06 2004-07-06 合金金丝及其制造方法 Pending CN1594620A (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626005B (zh) * 2009-07-09 2012-02-01 烟台一诺电子材料有限公司 键合银丝及其制备方法
CN102776405A (zh) * 2012-07-25 2012-11-14 烟台招金励福贵金属股份有限公司 一种键合金银合金丝的制备方法
CN103842529A (zh) * 2011-03-01 2014-06-04 田中电子工业株式会社 金（Au）合金键合线
CN108922876A (zh) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 一种金合金键合丝及其制造方法
CN109003903A (zh) * 2018-07-02 2018-12-14 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626005B (zh) * 2009-07-09 2012-02-01 烟台一诺电子材料有限公司 键合银丝及其制备方法
CN103842529A (zh) * 2011-03-01 2014-06-04 田中电子工业株式会社 金（Au）合金键合线
CN102776405A (zh) * 2012-07-25 2012-11-14 烟台招金励福贵金属股份有限公司 一种键合金银合金丝的制备方法
CN108922876A (zh) * 2018-06-27 2018-11-30 汕头市骏码凯撒有限公司 一种金合金键合丝及其制造方法
CN108922876B (zh) * 2018-06-27 2020-05-29 汕头市骏码凯撒有限公司 一种金合金键合丝及其制造方法
CN109003903A (zh) * 2018-07-02 2018-12-14 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法

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