CN1594620A - Alloy gold wire and manufacturing method thereof - Google Patents
Alloy gold wire and manufacturing method thereof Download PDFInfo
- Publication number
- CN1594620A CN1594620A CNA2004100244303A CN200410024430A CN1594620A CN 1594620 A CN1594620 A CN 1594620A CN A2004100244303 A CNA2004100244303 A CN A2004100244303A CN 200410024430 A CN200410024430 A CN 200410024430A CN 1594620 A CN1594620 A CN 1594620A
- Authority
- CN
- China
- Prior art keywords
- alloy
- gold wire
- earth metal
- gold
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
The invention relates to an alloy gold wire and its production method. The alloy is made up of 0.1-2% copper in weight percentage, 0.001-0.1% in weight at least a element of alkaline earth metal and rare metal, surplus being gold. The production method is to make alloy melt pass through continuous drawing and casting furnace and stretch into 18-75 mu m gold wire, and anneal the wire. So the inventive product has good electricity conductivity, welding performance and anti-oxydation function, high intensity, low elongation percentage, and is suitable for applying in large scale integration circuit.
Description
The present invention relates to the alloy gold wire that large-scale integrated circuit is used and the semi-conductor discrete device bonding is used that a kind of suitable volume is little, capacity is big, intensity is high.
Being applicable to the lead that is connected of large-scale integrated circuit and semi-conductor discrete device, being called internal lead or bonding wire, is one of four big semiconductor product base mateirals, and it must possess excellent conducting performance and mechanical parameter stably, oxidation and corrosion.Diameter in the 18-75 mu m range, can be selected to use usually by product category.
This connection lead is that main raw is equipped with ppm level trace element alloying and makes by highly purified gold normally.Along with making constant progress of science and technology, enterprise reduces day by day to the control of cost, and simultaneously product is gradually to the development of volume low capacity general orientation, and it is thin and the high characteristic of physical strength satisfies the conductivity requirement simultaneously to require spun gold can satisfy the line footpath.Now, domestic can only production high purity spun gold, its hardness is not high, adhesion easily in the production.Though developed country as Germany, day the present invention some gold alloy spun golds, what they added all is the rare metal of some price comparison costlinesses, as platinum, germanium, silver, magnesium etc.Their electroconductibility, chemical stability etc. are all fine, but at aspects such as hardness, costs defectiveness all.
Purpose of the present invention just provides a kind of gold alloy spun gold of admixture copper.Require it to have than mechanical performance parameters such as high-purity spun gold better intensity, unit elongation, in addition, relatively economical, superior in quality.This alloy gold wire both had been applicable to the connection lead, also can be used to make the ball-type welding that is used for flip chip technology.
The object of the present invention is achieved like this: a kind of alloy gold wire is characterized in that at least a alkaline-earth metal family and element, the surplus in the rare earth metal family by 0.1-2% weight copper, 0.0001-0.1% weight is that gold is formed.
The present invention also is: copper content is 0.7-1.5% weight; The content of alkaline-earth metal and/or rare earth metal is 0.001-0.01% weight; The platinum that also contains 0.1-1.0% weight, palladium or platinum that has and palladium a kind of; Alkaline-earth metal is one or more in beryllium, magnesium or the calcium; Rare earth metal is a cerium.
A kind of manufacture method of the alloy gold wire of one of making among the claim 1-6 is characterized in that the fusion gold alloy, and alloy melt is drawn into the spun gold of the general diameter with leads for connecting by the continuous drawing casting stove, and with this spun gold annealing.Molten alloy is cast the foundry goods of rounded section, is drawn into the filament that diameter is 18～75 μ m through drawing cold working, carries out corresponding thermal treatment and coiling at last again.
The present invention has the thin wire that connects the general diameter that lead uses and has and connect the desired properties that lead is used.The superior strength (comparison sees the following form) that particularly suitable electric conductivity is relevant with elongation.It surprisedly is the alloy gold wire of gold-copper-alloy and alkaline-earth metal and rare earth metal, with the lead contrast of making by High Purity Gold (〉=99.99%), under same stressing conditions, alloy gold wire of the present invention has higher intensity, what is particularly worth mentioning is that, add and reduced significantly because the scorching hot loss of strength that causes after alkaline-earth metal or rare earth metal are made alloy.The good strength of alloy gold wire, unit elongation are very important to reaching good bonding quality.
Alloy gold wire and high-purity spun gold mechanical property ratio are
| Diameter μ m | Unit elongation | Breaking load (intensity) | |
| High-purity spun gold | Alloy gold wire | ||
| ????18 | ????2.0～4.0 | ????＞4 | ????＞5 |
| ????20 | ????2.0～6.0 | ????＞5 | ????＞6 |
| ????23 | ????2.0～7.0 | ????＞7 | ????＞9 |
| ????25 | ????2.0～8.0 | ????＞9 | ????＞11 |
| ????30 | ????3.0～8.0 | ????＞13 | ????＞17 |
| ????38 | ????3.0～10.0 | ????＞21 | ????＞26 |
| ????50 | ????3.0～12.0 | ????＞34 | ????＞44 |
Alloy gold wire of the present invention because the high-performance that it had is favourable in particular as connecting lead, also is used in developing high frequency and connects and technology, and is used for making the contact bead in flip chip technology.
Embodiment 1: to produce 200 kilograms of alloy gold wires is example.Get 1.4 kilograms of copper, 0.02 kilogram alkaline-earth metal family, 198.58 kilograms of gold.Alkaline-earth metal family is one or more in beryllium, magnesium, the calcium.Choosing is put into the molten refining of smelting furnace with copper, alkaline-earth metal family during manufacturing, alloy with melting adds molten refining in the gold again, draw out the alloy bar of 7mm through molten refining, again through thin machine drawing cold-drawn, be drawn into the alloy gold wire of 18-75 μ m at last, through 300～700 ℃ annealing temperature, coiling packing in annealing back is put in storage again.
Embodiment 2: to produce 200 kilograms of alloy gold wires is example.Get 3 kilograms of copper, 0.02 kilogram rare earth metal family, 196.98 kilograms of gold.Rare earth metal family is a cerium.Its manufacture method is with embodiment 1.
Embodiment 3: to produce 200 kilograms of alloy gold wires is example.Get 2 kilograms of copper, 0.01 kilogram of alkaline-earth metal family and rare earth alloys, a kind of in 0.1 kilogram platinum, palladium, platinum and the palladium, 197.89 kilograms of gold.Alkaline-earth metal can be in beryllium, magnesium, the calcium one or more.Rare earth metal family is a cerium, can also be beryllium and cerium, magnesium and cerium, calcium and cerium one of them or the two or more alkaline-earth metal and the alloy of cerium.Its manufacture method is with embodiment 1.
Claims (9)
1. an alloy gold wire is characterized in that at least a alkaline-earth metal family and element, the surplus in the rare earth metal family by 0.1-2% weight copper, 0.0001-0.1% weight is that gold is formed.
2. alloy gold wire according to claim 1 is characterized in that described copper content is 0.7-1.5% weight.
3. alloy gold wire according to claim 1 and 2, the content that it is characterized in that described alkaline-earth metal and/or rare earth metal is 0.001-0.01% weight.
4. alloy gold wire according to claim 3 is characterized in that also containing that the platinum, palladium of 0.1-1.0% weight/or platinum and palladium is a kind of.
5. according to claim 1 or 3 described alloy gold wires, it is characterized in that described institute alkaline including earth metal is one or more in beryllium, magnesium or the calcium.
6. the alloy gold wire one of in the claim 1 or 3 is characterized in that contained rare earth metal is a cerium.
7. the manufacture method of an alloy gold wire of one of making among the claim 1-6 is characterized in that fusion gold-alloy, and alloy melt is drawn into the spun gold of the general diameter with leads for connecting by the continuous drawing casting stove, and with this spun gold annealing.
8. according to the alloy gold wire manufacture method described in the claim 7, it is characterized in that molten alloy cast the foundry goods of rounded section.
9. according to the described alloy gold wire manufacture method of claim 7 or 8, it is characterized in that alloy gold wire is 300-700 ℃ of annealing down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100244303A CN1594620A (en) | 2004-07-06 | 2004-07-06 | Alloy gold wire and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100244303A CN1594620A (en) | 2004-07-06 | 2004-07-06 | Alloy gold wire and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1594620A true CN1594620A (en) | 2005-03-16 |
Family
ID=34663500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100244303A Pending CN1594620A (en) | 2004-07-06 | 2004-07-06 | Alloy gold wire and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1594620A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626005B (en) * | 2009-07-09 | 2012-02-01 | 烟台一诺电子材料有限公司 | Bonding filamentary silver and preparation method thereof |
| CN102776405A (en) * | 2012-07-25 | 2012-11-14 | 烟台招金励福贵金属股份有限公司 | Preparation method of bonded gold-silver alloy wire |
| CN103842529A (en) * | 2011-03-01 | 2014-06-04 | 田中电子工业株式会社 | Bonding wire of gold (Au) alloy |
| CN108922876A (en) * | 2018-06-27 | 2018-11-30 | 汕头市骏码凯撒有限公司 | A kind of billon bonding wire and its manufacturing method |
| CN109003903A (en) * | 2018-07-02 | 2018-12-14 | 上杭县紫金佳博电子新材料科技有限公司 | A kind of bonding gold wire and preparation method thereof |
-
2004
- 2004-07-06 CN CNA2004100244303A patent/CN1594620A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626005B (en) * | 2009-07-09 | 2012-02-01 | 烟台一诺电子材料有限公司 | Bonding filamentary silver and preparation method thereof |
| CN103842529A (en) * | 2011-03-01 | 2014-06-04 | 田中电子工业株式会社 | Bonding wire of gold (Au) alloy |
| CN102776405A (en) * | 2012-07-25 | 2012-11-14 | 烟台招金励福贵金属股份有限公司 | Preparation method of bonded gold-silver alloy wire |
| CN108922876A (en) * | 2018-06-27 | 2018-11-30 | 汕头市骏码凯撒有限公司 | A kind of billon bonding wire and its manufacturing method |
| CN108922876B (en) * | 2018-06-27 | 2020-05-29 | 汕头市骏码凯撒有限公司 | Gold alloy bonding wire and manufacturing method thereof |
| CN109003903A (en) * | 2018-07-02 | 2018-12-14 | 上杭县紫金佳博电子新材料科技有限公司 | A kind of bonding gold wire and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101381823B (en) | Cu alloy material, cu alloy conductor and method of manufacturing cu alloy conductor using the same, cable or trolley wire using the cu alloy conductor | |
| CN100425717C (en) | Copper alloy for lead-wire frame and its production | |
| CN102418001A (en) | Bonding gold wire and preparation method thereof | |
| CN101646792A (en) | Cu-Ni-Si-based alloy for electronic material | |
| CN109767991B (en) | Preparation method of high-gold-alloy bonding wire | |
| CN103898353A (en) | Copper alloy with high strength and high conductivity and preparation method thereof | |
| JPH0229737B2 (en) | ||
| CN106992164A (en) | A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof | |
| CN1594620A (en) | Alloy gold wire and manufacturing method thereof | |
| JP3579603B2 (en) | Ultrafine wire made of gold alloy for contacting semiconductor components and method of manufacturing the same | |
| JP2911886B2 (en) | Ultrafine wire made of gold alloy containing cerium misch metal and method of manufacturing the same | |
| CN111599783B (en) | Silver-platinum bonding wire utilizing silver-platinum coating and preparation process thereof | |
| CN108866381A (en) | A kind of copper alloy with high strength and high conductivity wire rod and preparation method thereof | |
| CN101078069A (en) | Copper-base alloy for heat exchanger | |
| CN100386456C (en) | Special silicon bronze alloy and process for preparing same | |
| CN106486447A (en) | Copper alloy bonding wire | |
| KR100337382B1 (en) | Fine wire made of a gold alloy, method for its production, and its use | |
| CN108701622B (en) | Bonding wire | |
| CN108929968A (en) | A kind of production technology of high conductivity copper alloy wire | |
| CN107195608A (en) | A kind of copper microalloy bonding line and preparation method thereof | |
| CN110699570B (en) | High-balling-performance bonding silver wire material and preparation method thereof | |
| CN110783299A (en) | Copper micro-alloy single crystal bonding wire and preparation method thereof | |
| JPS63238232A (en) | Fine copper wire and its production | |
| CN105448745A (en) | Fabrication method of lead frame | |
| JPS62224652A (en) | Aluminum alloy for lead frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |