CN108922876A - 一种金合金键合丝及其制造方法 - Google Patents

一种金合金键合丝及其制造方法 Download PDF

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Publication number
CN108922876A
CN108922876A CN201810678000.5A CN201810678000A CN108922876A CN 108922876 A CN108922876 A CN 108922876A CN 201810678000 A CN201810678000 A CN 201810678000A CN 108922876 A CN108922876 A CN 108922876A
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Prior art keywords
annealing
bonding wire
billon
wire
billon bonding
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CN108922876B (zh
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周振基
周博轩
于锋波
彭政展
麦宏全
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Shantou Junma Kaisa Coltd
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Shantou Junma Kaisa Coltd
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  • Wire Bonding (AREA)

Abstract

本发明提供一种金合金键合丝，其特征在于按重量计含有Pd 0.5‑2%，Ag 15‑30%，Cu 0.5‑3%，Pt 0.1‑2%，微量添加元素2‑200 ppm，余量为金；所述微量添加元素是Ca、In、Co、Be、Ga、Mg、Ce和Ni中的一种或其中两种以上的组合。本发明提供还上述金合金键合丝的一种制造方法。本发明的金合金键合丝具有优异的高可靠性能和抗硫化性能，抗拉强度高，焊点接合性好，且能降低成本。

Description

一种金合金键合丝及其制造方法
技术领域
本发明涉及IC、LED封装用的键合丝，具体涉及一种金合金键合丝及其制造方法。
背景技术
键合丝（bonding wire，又称键合线）是连接芯片与外部封装基板（substrate）和/或多层线路板（PCB）的主要连接方式。键合丝的发展趋势，从产品方向上，主要是线径细微化、高车间寿命（floor life）以及高线轴长度；从化学成分上，主要有铜线（包括裸铜线、镀钯铜线、闪金镀钯铜线）在半导体领域大幅度取代金线，而银线和银合金线在LED以及部分IC封装应用上取代金线。另外一个重要方向是金合金线的发展，以进一步降低成本并且保持或提高键合过程的各项性能要求。
由于电子产品小型化和细薄化的发展要求，半导体行业通过芯片厚度减薄(Waferthinning)、封装采用芯片堆栈(Die stacking)、倒装芯片(flip chip)、晶圆级封装（waferlevel packaging）、2.5D和3D封装等方法来应对，然而传统的键合封装（wire bonding）仍然是主流封装形式。
传统的由纯金材质制成的金键合丝，其具备优异的化学稳定性和导电导热性能，因而被广泛用作IC内引线。但随着国际金价的不断上涨， 金键合丝的价格也一路攀升，导致终端产品的成本过高，不利于企业提高竞争力。除此之外，金键合丝的抗拉强度较低（例如直径20微米的金键合丝，在焊接后，其最高抗拉强度不足5克力），延伸率不容易控制。以上两方面因素成为阻碍金键合丝应用与发展的瓶颈。
为降低成本，不断涌现出各种键合丝，如银合金丝、金合金丝以及镀金银合金键合丝等等，其价格相对较低，也能满足不同客户的不同需求；但对于高端的LED，对产品的接合性及信赖性要求较高，常规的银合金以及镀金银合金丝因银的氧化，会出现键合氧化、银离子电位迁移、焊点共晶不好等缺陷，在可靠性方面也达不到客户的要求。
发明内容
本发明所要解决的技术问题是提供一种金合金键合丝以及这种金合金键合丝的制造方法，这种金合金键合丝具有优异的高可靠性能和抗硫化性能，抗拉强度高，焊点接合性好，且能降低成本。采用的技术方案如下：
一种金合金键合丝，其特征在于按重量计含有Pd 0.5-2%，Ag 15-30%，Cu 0.5-3%，Pt0.1-2%，微量添加元素2-200 ppm，余量为金；所述微量添加元素是Ca、In、Co、Be、Ga、Mg、Ce和Ni中的一种或其中两种以上的组合。
本发明通过合金的设计，提升线材的抗拉强度，并能改善金合金焊点结合性的问题，也提升线材的抗硫化能力，从而获得焊点接合性好、抗硫化能力强、抗拉强度高的金合金键合丝。相对于纯金键合丝而言，本发明的金合金键合丝用于IC、LED 封装中，能降低成本并改善纯金线抗拉强度不足的问题，而其他性能均能达到纯金键合丝的性能要求。
本发明的金合金键合丝中，除了金之外，还有含有15-30%的银，银和金能充分固溶，起到固溶强化的作用，提高线材的抗拉强度，但由于银本身容易硫化，会导致线材在作业性方面和信赖性方面都存在不足，因此在此基础上加入含量0.5-3%的铜（Cu），能有效地改善线材的抗硫化性能，并改善封装产品在热冲击试验中的可靠性；加入0.1-2%的铂（Pt）等能提高金合金线材的再结晶温度，提升线材在高温环境下的耐疲劳性，有效降低颈部断线的几率；加入含量0.5-2%的钯（Pd），能有效地改善线材的抗氧化和抗硫化性能，并改善封装产品在热冲击试验中的可靠性。适量的微量添加元素用以改进线材的机械性能，其中Ca、In、Ga、Mg、Ce、Ni能有效提升金合金的焊线作业性，能增强线材与芯片及基板的粘附性能，提升信赖性能；Co、Be等能提高金合金线材的再结晶温度，提升线材在高温环境下的耐疲劳性，有效降低颈部断线的几率。
一种优选方案中，上述微量添加元素含有10-100ppm的Ca、2-50ppm的Mg和2-50ppm的Ce。另一种优选方案中，上述微量添加元素含有10-80ppm的Ca、2-50ppm的In和2-50ppm的Be。另一种优选方案中，上述微量添加元素含有2-100ppm的Ce和10-50ppm的Ca。另一种优选方案中，上述微量添加元素含有2-80ppm的Ni、10-100ppm的Ca和2-20ppm的Co。另一种优选方案中，上述微量添加元素含有2-50ppm的Ga、2-60ppm的Be和2-80ppm的Ca。采用以上各种微量添加元素的组合，能有效提升线材的再结晶温度，改善线材的组织结构，提升线材在高温环境下的耐疲劳性，有效降低颈部断线的几率，并且能增强线材与芯片及基板的粘附性能，提升信赖性能。
本发明还提供上述金合金键合丝的一种制造方法，其特征在于包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt和微量添加元素加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为6-8毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.08-0.5mm（毫米）的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（微米）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为600-2000mm，退火温度为500-800℃，退火速率为30-100m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为600-1000mm，退火温度为300-800℃，退火速率为60-120m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至20-30℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
步骤（3）通过对键合丝半成品进行中间退火，能够消除加工硬化，使键合丝半成品具有一定延伸率。
本发明的金合金键合丝与现有技术相比，具有以下有益效果：
（1）通过特殊元素组合的金合金设计，形成的金合金键合丝具有优异的高可靠性能和抗硫化性能，抗拉强度高，焊点接合性好，可靠性高；
（2）本发明得到的金合金键合丝具有45-55 um范围的HAZ，极大地降低了打线的弧高；
（3）本发明得到的金合金键合丝在FAB烧球后，得到数目适中（从FAB剖面看长轴晶数目在6-10之间）的对称柱状晶，确保了变形球的真圆度；
（4）成本较低。
具体实施方式
实施例1
本实施例的金合金键合丝按重量计含有Pd 1.0%，Ag 30%，Cu 0.5%，Pt 1%，Ce 80ppm，Ca 20ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt、Ce和Ca加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为8毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.5mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为1000mm，退火温度为600℃，退火速率为50m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为800mm，退火温度为500℃，退火速率为80m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至25℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
实施例2
本实施例的金合金键合丝按重量计含有Pd 1.5%，Ag 20%，Cu 0.6%，Pt 2%， Ca 80ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt和Ca加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为8毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.2mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为2000mm，退火温度为500℃，退火速率为100m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为600mm，退火温度为800℃，退火速率为60m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至20℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
实施例3
本实施例的金合金键合丝按重量计含有Pd 2%，Ag 15%，Cu 1%，Pt 0.2%，Ni 100ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt和Ni加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为6毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.08mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为600mm，退火温度为800℃，退火速率为30m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为1000mm，退火温度为300℃，退火速率为80m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至30℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
实施例4
本实施例的金合金键合丝按重量计含有Pd 0.5%，Ag 25%，Cu 3%，Pt 0.1%， Ca100ppm，Mg 50ppm，Ce 50ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt、Ca、Mg 和Ce加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为6毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.4mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为1500mm，退火温度为700℃，退火速率为50m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为900mm，退火温度为400℃，退火速率为90m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至30℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
实施例5
本实施例的金合金键合丝按重量计含有Pd 0.8%，Ag 18%，Cu 1.5%，Pt 1.2%，Ca50ppm，In 40ppm，Be 50ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt、Ca、In和Be加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为8毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.3mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为1200mm，退火温度为600℃，退火速率为60m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为600mm，退火温度为800℃，退火速率为100m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至25℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
实施例6
本实施例的金合金键合丝按重量计含有Pd 1.5%，Ag 20%，Cu 2.5%，Pt 0.6%，Ni80ppm，Ca 80ppm，Co 20ppm，余量为金。
本实施例中，金合金键合丝的制造方法包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt、Ni 、Ca和Co加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为6毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.4mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um（如20 um）的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为1000mm，退火温度为600℃，退火速率为100m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为1000mm，退火温度为600℃，退火速率为100m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至30℃，得到所需的金合金键合丝。
对步骤（5）得到的金合金键合丝进行卷绕，可绕成500米/卷或1000米/卷的成品。
对以上实施例1-6获得的金合金键合丝进行性能测试（对比例采用市场上购买的常规含金量为80%wt的金合金线）。
1、HAZ长度的测试方法
将实施例1-6与对比例的线材进行FIB (Focused Ion beam)聚焦离子束切割，利用SEM(scanning electron microscopy)扫描电镜进行观察，通过比较不同线材位置的晶体大小的变化，可以得到HAZ的长度信息。
2、老化测试方法
实施例1-6和对比例所得到线材在可靠性的差别主要在热冲击部分。具体老化试验条件如表1。试验封装形式是LED封装中的 SMD2835，BSOB打线，封装硅胶采用道康宁OE6650，封装好的样品在每次完成50个循环的热冲击后，观察是否还能电亮，记录失效死灯的个数。
表1
3、硫化测试方法
将灌封好的样品灯珠放置于密闭容器内（升华一定的硫浓度），恒温85℃；硫化一定时间后取出测试光衰。
性能测试结果如表2所示。
表2
注：变形球真圆度不合格数是真圆度不良的变形压缩球以及偏心球的总和。
上述性能测试结果表明：
1、本发明实施例1-6的金合金键合丝得到的HAZ远远低于对比例的线材。
2、本发明实施例1-6的金合金键合丝的打线性能（变形球真圆度）明显优于对比例。
本发明线材优异的打线性能主要是因为该线材能够在确保稳定的烧球性能（包括FAB的居中性以防止偏心球和FAB内所生成的对称和数目合适的柱状晶）。
3、本发明实施例1-6的金合金键合丝相对于对比例，可靠性得到很大提升。
本发明实施例1-6的金合金键合丝经过550个循环的热冲击后，仍没有失效死灯情况（其中实施例4、6经过600个循环的热冲击后，仍没有失效死灯情况）；而对比例则已经出现失效死灯（对比例只能经受400个循环的热冲击）。这说明本发明技术线材的可靠性更高。
4、硫化
本发明实施例1-6的金合金键合丝经过硫化测试，光衰在18%以下；而对比例光衰在25%。这说明本发明技术线材的抗硫化能力更强。

Claims (7)

1.一种金合金键合丝，其特征在于按重量计含有Pd 0.5-2%，Ag 15-30%，Cu 0.5-3%，Pt0.1-2%，微量添加元素2-200 ppm，余量为金；所述微量添加元素是Ca、In、Co、Be、Ga、Mg、Ce和Ni中的一种或其中两种以上的组合。
2.根据权利要求1所述的金合金键合丝，其特征是：所述微量添加元素含有10-100ppm的Ca、2-50ppm的Mg和2-50ppm的Ce。
3.根据权利要求1所述的金合金键合丝，其特征是：所述微量添加元素含有10-80ppm的Ca、2-50ppm的In和2-50ppm的Be。
4.根据权利要求1所述的金合金键合丝，其特征是：所述微量添加元素含有2-100ppm的Ce和10-50ppm的Ca。
5.根据权利要求1所述的金合金键合丝，其特征是：所述微量添加元素含有2-80ppm的Ni、10-100ppm的Ca和2-20ppm的Co。
6.根据权利要求1所述的金合金键合丝，其特征是：所述微量添加元素含有2-50ppm的Ga、2-60ppm的Be和2-80ppm的Ca。
7.权利要求1-6任一项所述的金合金键合丝的制造方法，其特征在于包括下述步骤：
（1）熔铸：按比例将Pd、Ag、Cu、Pt和微量添加元素加入到金原料中，经过真空熔炼和定向连续引铸工艺，获得直径为6-8毫米的线材；
（2）拉丝：对步骤（1）得到的线材进行拉丝，获得直径为0.08-0.5mm的键合丝半成品；
（3）对步骤（2）得到键合丝半成品继续进行拉丝，获得直径为15-50 um的金合金键合丝；
在拉丝过程中对键合丝半成品进行若干次中间退火，在退火过程中采用N2做为退火气氛，退火炉有效长度为600-2000mm，退火温度为500-800℃，退火速率为30-100m/min；
（4）最后退火：步骤（3）拉丝完成后，对金合金键合丝进行最后退火，在退火过程中采用N2来做为退火气氛，退火炉有效长度为600-1000mm，退火温度为300-800℃，退火速率为60-120m/min；
（5）冷却：最后退火结束后，将金合金键合丝冷却至20-30℃，得到所需的金合金键合丝。
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