CN1547626A - 通过对相对于沟道区域的微结构的自觉偏移提高多晶薄膜晶体管器件之间均匀性的方法 - Google Patents
通过对相对于沟道区域的微结构的自觉偏移提高多晶薄膜晶体管器件之间均匀性的方法 Download PDFInfo
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Abstract
制作一种有均匀微结构的多晶硅薄膜晶体管的方法。一种示例的方法要求接纳一个有晶粒结构的多晶硅薄膜,该结构至少在一个第一方向上是周期性的,并且在接纳的薄膜上放置一个或多个薄膜晶体管的至少一些部分(410,420),因此它们相对于该薄膜的周期性结构倾斜。
Description
相关申请的交互引用
本申请基于申请于2001年8月27日,系列号为60/315181的美国临时专利申请,该申请因各种目的通过引用而结合在本文中,本申请并要求对该申请的优先权。
发明背景
技术领域
本发明涉及半导体工艺技术,更具体地涉及适用于制造薄膜晶体管(“TFT”)半导体器件的技术。
背景技术
众所周知,诸如硅薄膜的半导体薄膜被用于为液晶显示器件和有机光发射二极管显示器件提供像素。这样的薄膜通常通过准分子激光退火法(“ELA”)加工,该方法中,无定形硅薄膜通过准分子激光的照射使其结晶。
大量的努力被投入到对“常规”的ELA(也被认作为线光束ELA)工艺的改进上,力图提高置于经加工的半导体薄膜上的TFT器件的性能。例如,授予Maegawa等人的专利号为5766989的美国专利叙述了该种形成多晶薄膜的ELA方法以及一种制造TFT的方法,该专利的全部发明通过引用而全文结合在本文中。该专利致力于解决衬底表面上器件性能的不均匀性问题,并为明显抑制这样的不均匀提供了一定的选择。
但是,用于常规的ELA方法中的光束成形法的细节使减小半导体薄膜中的不均匀和提高这样的薄膜的性能变得极端困难。例如,在低温多晶硅(“LTPS”)工艺中,当晶粒的尺寸和TFT沟道区域的尺寸可比较时,很大程度上的器件之间的不均匀性就发生了。这是由于微结构的随机性,也就是晶粒和因此的晶粒边界的随机位置引起的。这样的不均匀性,尤其是垂直于电流流动方向时,会起到电流屏障的作用。还有,当晶体管处于截止状态时,载流子产生于晶粒边界上,这些载流子贡献于截止电流。尤其在晶粒边界在漏-沟道结中或靠近该结的情况下更是如此。
因此,已经认识到,为了保证TFT的关于周期性的以及位置上的均匀的工艺,就需要对微结构进行控制。关于前者,薄膜应该均匀,表现出晶粒和因此的晶粒边界的位置的周期性。对于后者,晶粒和因此的晶粒边界的位置应受到控制,因此它们对电气特性的贡献对每个单个器件都相同。
在脉冲激光即准分子激光照射获得LTPS薄膜的工艺中,对TFT微结构的控制可以通过应用平版工艺诱导这样的周期性而获得。平版工艺的应用也解释了为什么要位置控制,因为平版工艺要应用精确的对准程序。不幸的是,平版工艺的应用需要至少一个额外的工艺步骤,这样反过来增加了复杂性因此而增加了成本。
或者,对TFT微结构的控制可以通过应用连续的侧向固化技术而得到。例如,在授予Im的美国专利6322635号以及被转让给本申请的共同受让人的系列号为09/390537的美国专利申请(“537申请”)中,叙述了用能量可控激光脉冲和硅样品的小规模转变生长大晶粒多晶或单晶硅结构以实施连续的侧向固化的特别有利的设备和方法,该两项专利或专利申请的全部发明都通过引用而结合在本文中。如这些专利文件所述,在衬底上的半导体薄膜的至少一部分被用适当的辐射脉冲照射以在其全部厚度上完全熔化薄膜的该部分。在该方式中,当熔化的半导体材料固化时,晶体结构从该半导体薄膜的未经历完全熔化的经选择的区域生长入固化的部分。然后,激光束脉冲从形成晶体的区域稍许偏移地进行照射,这样,晶粒结构就从形成晶体的区域延伸进熔化的区域。
应用如图1显示的***将无定形的硅薄膜样品加工成单晶或多晶硅薄膜。通过产生多个有预先确定通量的准分子激光脉冲,可控制地调整准分子激光脉冲的通量,在预先确定的平面上使经调整的激光脉冲均匀化,用掩模使经均匀化的经调整的激光脉冲形成带有图形的激光束,用该带有图形的激光束照射无定形硅薄膜样品以实现该样品的相应于该激光束的部分的熔化,以及可控制地相关于带有图形的激光束和经相关于经控制的调整转变样品,连续相对于带有图形的激光束转变样品,用有变化通量的带有图形的激光束在样品上相应的相继位置照射样品,从而无定形的硅薄膜样品被加工成单晶或多晶硅薄膜。
虽然图1的***在产生均匀的高质量的,呈现周期性的多晶和单晶硅方面非常有利,从而解决常规的ELC技术固有的问题,但该技术并不能适当地做到对晶粒边界的控制。例如,在最简单的形式中,SLS需要两个脉冲将无定形前体结晶成带有部分周期性的LTPS薄膜,即如图2a示意性显示的两次照射材料。仅在由长晶粒边界210,220,230,240,250显示的方向上有周期性,这些长晶粒边界互相平行,并有一个伸向它们的突起。但是,短晶粒边界的位置完全不受控制。平行的晶粒边界之间的间隔可以增加,该材料就是通常所称的n次照射材料。同样,图b显示了一种被称为四照射的材料,该材料中,晶粒边界在两个方向上都有周期性。还有,晶粒边界之间的间隔可以增加,通常被称为2n次照射的材料。
虽然SLS技术提供了周期性,但这样的技术不能提供对晶粒边界的位置的精确控制。参考图2c-d,所产生的LTPS薄膜包括一个垂直于电流的长晶粒边界的变数以及在TFT漏区域中或漏区域外有垂直的晶粒边界的可能性。当晶粒尺寸增加和/或当沟道尺寸减小,即当晶粒尺寸变得和沟道尺寸可比较时,该两个问题将更严重。虽然在授予Jung的美国专利6177301中提出一个相对于晶粒生长的方向偏移TFT沟道区域的建议,但该建议未考虑到在TFT微结构中保持均匀性的潜在的需要。因此,对TFT制造技术存在一种需要,为了在TFT微结构中提供均匀性,应对晶粒边界的周期性和TFT的位置作出控制。
发明概述
本发明的一个目的是提供一种TFT的制造技术,该技术为了在TFT微结构中提供均匀性,对晶粒边界的周期性和TFT的位置作出控制。
本发明的另一个目的是提供一种有在TFT微结构中的均匀性的器件。
为了实现本发明的这些和其他目的,随着参考下文将阐述的其他揭示这些目的将变得愈加明显,本发明提供了制作一种有均匀的微结构的多晶硅薄膜晶体管的方法。一种示例的方法需要接纳一个多晶硅薄膜,该薄膜具有在至少一个第一方向上有周期性的晶粒结构,还需要在该接纳的薄膜上放置一个或多个薄膜晶体管的至少一些部分,这样,这些晶体管相对于所述薄膜的周期结构倾斜。多晶硅薄膜可以通过连续的侧向固化工艺,即两次照射连续侧向固化工艺形成。
有利的是,所述一个或多个薄膜晶体管的部分可以是有宽度W的有源沟道区域。在薄膜的周期结构为λ而m为可变的地方,间隔步骤包括将有源沟道区域放置在所接纳的薄膜之上,这样,它们相对于所述薄膜的所述周期性结构倾斜θ角度,该处Wsin(θ)=mλ。可变的m经过选择,因此在一个或多个薄膜晶体管的任何一个中晶粒边界数相对保持受控,并最好约等于一个整数。
本发明也提供一种包括多晶硅薄膜晶体管的器件,该多晶硅薄膜晶体管由有均匀的微结构。在一个示例实施例中,该器件包括有至少在一个第一方向是周期性的晶粒结构的多晶硅薄膜以及一个或多个薄膜晶体管的至少一些部分,这些晶体管放置在薄膜上,因此它们相对于该薄膜的所述周期性结构倾斜。
结合在本文中并构成本发明的一部分的附图说明了本发明的优选实施例并用以解释本发明的原理。
附图简述
图1是用于实施包括连续侧向固化在内的半导体工艺的先有技术***的功能性示意图;
图2a-b是显示示例的用图1的先有技术***加工的硅样本的说明性示意图;
图2c-d是显示先有技术的在图2a中显示的示例的经加工的硅样本上安排TFT的有源沟道区域的说明性示意图;
图3a-b是显示根据本发明的在图2a中显示的示例的经加工的硅样本上安排TFT的有源沟道区域的说明性示意图;
图4a-b是显示根据本发明的在图2a中显示的示例的经加工的硅样本上安排TFT的有源沟道区域的说明性示意图;和
图5a-b是显示根据本发明的在图2a中显示的示例的经加工的硅样本上安排TFT的有源沟道区域的说明性示意图;
在全部附图中,除非另行指出,相同的参考数字和字符指出被说明实施例的相同的特征,元件,组成或部分。另外,虽然本文参考该附图对本发明进行详尽叙述,该叙述也通过联系该说明性实施例进行。
较佳实施例的详细描述
继续参考图2a-b,图中显示了示例的用图1的先有技术SLS***加工的硅薄膜。具体地说,图2a说明了通过用一个单准分子激光脉冲照射一个区域,微转变该样本,以及用一个第二准分子激光脉冲照射该区域加工的样本。虽然下文对本发明的实例叙述将相关于作为一个实例的被称为两次照射的材料进行,本技术领域的熟练人士将理解的是,本发明可以被更广泛地应用到用n次照射以及2n次照射的SLS技术加工的硅薄膜上。
根据本发明,TFT的有源沟道区域被故意相对于经加工的薄膜的周期结构倾斜。这样的倾斜可以通过在经加工的薄膜上倾斜沟道区域本身的安排来完成,或者通过在SLS工艺期间制作一个包括一个倾斜的周期性晶粒结构的薄膜来完成。也可以应用该两种选择的结合。
在经加工的薄膜上放置TFT的精确的方法对本发明并不重要,在该方面可应用任何已知的技术。在授予Maegawa等人的美国专利5766989中叙述了一种示例的技术,该专利的内容通过引用而结合在本文中。
当TFT的有源沟道区域被故意相对于经加工的薄膜的周期结构倾斜时,垂直的或长晶粒边界数的散布变得较少,导致了被提高的器件之间的均匀性。但根据本发明,倾斜角(θ)不应太大,如不能增加平行的或短的晶粒边界的影响。理想的θ的值可以从方程(1)得到,在该方程中,W是沟道区域的宽度,λ是垂直的晶粒边界之间的间隔,m数值上最好接近一个整数:
W*sin(θ)=m*λ (1)
为了测量TFT的性能N可以应用方程(2),该方程中,L是沟道区域的长度,n是一个预先确定的比:
L*cos(θ)=n*λ (2)
在方程(2)中,比n的较低的值意指提高的性能。L经常由工艺的设计规程限定,对所有的TFT都相等,通常在3到6微米的范围内。但W可以经调整以符合TFT性能上的要求,通常在10到数百微米的范围内。垂直的晶粒边界之间的间隔λ通常在2到10微米的范围内,但也可以小于或大于该值。
下面参考图3a-b叙述本发明的第一实例。在该实例中,比率n=1,m=1,θ=10度。如图3a-b所示,不考虑TFT装置的例如从图3a中位置到图3b中位置的任何变化,所有的装置包含一个垂直晶粒边界。
下面参考图4a-b叙述本发明的第二实例。在该实例中,比率n=0.5,m=1,θ=10度。如图4a-b所示,沟道区域包括两个部分,存在一个垂直的晶粒边界的第一部分410和不存在垂直的晶粒边界的第二部分420。
在后一个部分420中,器件表现出在全方向固化材料中的TFT的行为,该部分中载流子不受到晶粒边界的阻碍。如图4a-b所示,该两个部分中的每个部分的相对贡献对于器件的任何转变,例如从图4a所示的位置到图4b所示的位置都再一次是不可改变的。
虽然图3-4中显示的实例被认为是理想的方案,其中m是一个整数,来自使用一个整数值的小的偏差可以根据本发明被使用。但是,该来自一个整数值的偏差必须经选择,这样,在任何给定的TFT中的晶粒边界数相对保持受控。
下面参考图5a-b叙述本发明的另一个实例。在图5a中,比值n=2.1,m=1,θ=10度;在图5b中,比值n=2.1,m=0.5,θ=5度。如图5a-b中所示,对于θ的理想值,晶粒边界数再次对于器件的任何转变都不可变。但是当θ偏移该值时,各种转变在增加方向上改变了晶粒边界数。当n等于或非常接近一个整数时,晶粒边界数基本上对于θ的各个变化都是不变的。当然,它应该超过一个一定值,以保证在漏区域中的一部分垂直的晶粒对于各种转变也是不变的。
上文仅说明了本发明的原理。对于在本领域熟练的人士而言根据本文的学说对所叙述的实施例进行各种修改和变动将是显而易见的。因此可以理解的是,在本领域熟练的人士将能够设计出为数众多的***和方法,这些方法虽然没有在本文中明确地显示或叙述,但是能实施本发明的原理,因此是在本发明的精神和范围之内。
Claims (19)
1.一种制作一种包括两个或多个有基本均匀微结构的薄膜晶体管的器件的方法,其特征在于,包括步骤:
(a)接纳一个有一个晶粒结构的多晶硅薄膜,该结构至少在一个第一方向上是周期性的;和
(b)在所述接纳的薄膜上放置两个或多个薄膜晶体管中的至少一些部分,该接纳的薄膜相对于所述薄膜的周期结构倾斜一个角度,因此在所述部分的任何一部分中长晶粒边界数基本保持均匀。
2.如权利要求1所述的方法,其特征在于,其中所述接纳步骤包括接纳一个通过一个连续侧向固化工艺形成的多晶硅薄膜的步骤。
3.如权利要求1所述的方法,其特征在于,其中所述两个或多个薄膜晶体管的所述部分包括有一个宽度W的有源沟道区域。
4.如权利要求3所述的方法,其特征在于,其中所述薄膜的所述周期结构是λ,m是一个变量,所述放置步骤包括在所述接纳的薄膜上放置所述有源沟道区域的步骤,因此所述有源沟道区域相对于所述薄膜的所述周期结构倾斜一个角度θ,其中W sin(θ)=mλ。
5.如权利要求4所述的方法,其特征在于,其中m基本上等于一个整数。
6.如权利要求4所述的方法,其特征在于,其中m等于一个整数。
7.如权利要求4所述的方法,其特征在于,其中m等于整数1。
8.一种制作一种包括薄膜晶体管的器件的方法,其特征在于,包括步骤:
(a)接纳一个有一个晶粒结构的多晶硅薄膜,该结构至少在一个第一方向上是一个数量λ的周期性的;和
(b)在所述接纳的薄膜上放置一个或多个薄膜晶体管中的至少一些部分,该薄膜晶体管有一个宽度W,该接纳的薄膜相对于所述薄膜的所述周期性结构λ倾斜一个角度θ,这样W sin(θ)=mλ,其中m基本上等于一个整数。
9.如权利要求8所述的方法,其特征在于,其中所述接纳步骤包括接纳一个通过一个连续侧向固化工艺形成的多晶硅薄膜的步骤。
10.如权利要求8所述的方法,其特征在于,其中所述一个或多个薄膜晶体管的所述部分包括有一个宽度W的有源沟道区域。
11.如权利要求10所述的方法,其特征在于,其中m等于一个整数。
12.如权利要求10所述的方法,其特征在于,其中m等于整数1。
13.一种包括两个或多个有基本均匀微结构的多晶硅薄膜晶体管的器件,该器件包括:
(a)一个有一个晶粒结构的多晶硅薄膜,该结构至少在一个第一方向上是周期性的;和
(b)放置在所述接纳的薄膜上的至少两个或多个薄膜晶体管部分,每一个相对于所述薄膜的周期结构倾斜一个角度,因此在所述部分的任何一部分中长晶粒边界数基本保持均匀。
14.如权利要求13所述的器件,其特征在于,其中所述多晶硅薄膜包括通过连续的侧向固化工艺形成的薄膜。
15.如权利要求13所述的器件,其特征在于,其中所述两个或多个薄膜晶体管的所述部分包括有一个宽度W的有源沟道区域。
16.如权利要求13所述的器件,其特征在于,其中所述薄膜的所述周期结构是λ,m是一个变量,所述有源沟道区域相对于所述薄膜的所述周期结构倾斜一个角度θ,其中W sin(θ)=mλ。
17.如权利要求16所述的器件,其特征在于,其中m基本上等于一个整数。
18.如权利要求16所述的器件,其特征在于,其中m等于一个整数。
19.如权利要求16所述的器件,其特征在于,其中m等于整数1。
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- 2002-08-27 WO PCT/US2002/027246 patent/WO2003018882A1/en active Application Filing
- 2002-08-27 KR KR1020047002791A patent/KR100916281B1/ko not_active IP Right Cessation
- 2002-08-27 US US10/487,170 patent/US7160763B2/en not_active Expired - Fee Related
- 2002-08-27 CN CNB02816797XA patent/CN1330797C/zh not_active Expired - Fee Related
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Cited By (2)
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CN104465673A (zh) * | 2014-12-30 | 2015-03-25 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、以及显示装置 |
CN104465673B (zh) * | 2014-12-30 | 2018-02-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、以及显示装置 |
Also Published As
Publication number | Publication date |
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CN1330797C (zh) | 2007-08-08 |
KR20040036739A (ko) | 2004-04-30 |
TW556350B (en) | 2003-10-01 |
US7160763B2 (en) | 2007-01-09 |
WO2003018882A1 (en) | 2003-03-06 |
JP2005525689A (ja) | 2005-08-25 |
KR100916281B1 (ko) | 2009-09-10 |
US20050034653A1 (en) | 2005-02-17 |
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