CN1442853A - 用于信息记录媒体的相变记录材料及使用此材料的信息记录媒体 - Google Patents
用于信息记录媒体的相变记录材料及使用此材料的信息记录媒体 Download PDFInfo
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- CN1442853A CN1442853A CN03120231.4A CN03120231A CN1442853A CN 1442853 A CN1442853 A CN 1442853A CN 03120231 A CN03120231 A CN 03120231A CN 1442853 A CN1442853 A CN 1442853A
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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Abstract
Description
组合物(Sb1-xSnx)1-yGet | |||||
x | y | 初始晶体化 | 记录性能 | 备注 | |
实施例1 | 0.25 | 0.18 | 好 | 好 | |
实施例2 | 0.32 | 0.18 | 好 | 好 | |
比较例1 | 000 | 0.110.160.21 | 差 | 差 | 得不到均一的初始晶体化 |
比较例2 | 0.25 | 0.09 | 好 | 差 | 无法形成非晶态标记物 |
比较例3 | 0.25 | 0.35 | 差 | 差 | 缓慢的结晶速率 |
比较例4 | 0.590.590.590.59 | 0.160.190.210.23 | 好好好好 | 差差差差 | 很难都满足非晶态标记物形成和标记物结晶化 |
组合物(Sb1-xSnx)1-yIny | |||||
x | y | 初始晶体化 | 记录性能 | 备注 | |
比较例5 | 0.260.310.31 | 0.18028034 | 好好好 | 差差差 | 无法形成非晶态标记物 |
αi,βi | ||||||||||
α1 | β1 | α2 | β2 | α3 | β3 | α4 | β4 | α5 | β5 | |
3T | 2.0 | 0.6 | ||||||||
4T | 1.0 | 0.95 | 1.05 | 0.3 | ||||||
5T | 1.0 | 1.35 | 1.45 | 0.3 | ||||||
6T | 1.0 | 1.0 | 1.0 | 0.9 | 1.0 | 0.3 | ||||
7T | 1.0 | 1.35 | 1.0 | 1.0 | 1.4 | 0.3 | ||||
8T | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 0.9 | 1.0 | 0.3 | ||
9T | 1.0 | 1.35 | 1.0 | 1.0 | 1.0 | 1.0 | 1.4 | 0.3 | ||
10T | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 0.9 | 1.0 | 0.3 |
11T | 1.0 | 1.35 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.4 | 0.3 |
元素Ml | 膜厚度 | 组合物 | 噪音(dBm) | 3T空间抖动性/写入功率 | 备注 | ||||||||||
ZnS-SiO2 | 记录层 | ZnS-SiO2 | AlTa | GeN | Ag | x | y | z | 老化前记录 | 老化后 | 老化后记录 | ||||
实施例4 | - | 80 | 18 | 30 | 200 | - | - | 0.2 | 0.18 | 0 | -49.6 | 39.1ns/26mW | - | - | |
实施例5 | In | 80 | 18 | 30 | 200 | - | - | 0.13 | 0.16 | 0.04 | -59.8 | - | - | - | |
实施例6 | Pd | 80 | 16 | 30 | 200 | - | - | 0.19 | 0.15 | 0.01 | -58.9 | - | - | - | |
实施例7 | Pt | 80 | 18 | 30 | 200 | - | - | 0.2 | 0.17 | 0.01 | -59.6 | - | - | - | |
实施例8 | Ag | 80 | 16 | 30 | 200 | - | - | 0.2 | 0.14 | 0.02 | -58 | - | - | - | |
- | - | - | |||||||||||||
实施例9 | - | 80 | 15 | 30 | 200 | - | - | 0.24 | 0.18 | 0 | - | 25.6ns/26mW | 24.5ns | 48.8ns/29mW | |
实施例5 | In | 80 | 18 | 30 | 200 | - | - | 0.13 | 0.16 | 0.04 | - | 22.0ns/26mW | 21.0ns | 39.2ns/28mW | |
实施例10 | In | 80 | 18 | 30 | 200 | - | - | 0.08 | 0.15 | 0.08 | - | 27.5ns/26mW | 26.3ns | 40.7ns/29mW | |
实施例11 | In | 95 | 18 | 27 | - | 3 | 200 | 0.08 | 0.15 | 0.08 | - | 26.4ns/28mW | 25.1ns | 28.3ns/31mW | |
比较例6 | In | 80 | 18 | 30 | 200 | - | - | 0.08 | 0.04 | 0.36 | - | - | - | - | 反射率有小的变化 |
元素Ml | 膜厚度 | 组合物 | 噪音(dBm) | 3T空间抖动性/写入功率 | 备注 | |||||||||||
ZnS-SiO2 | 记录层 | ZnS-SiO2 | AlTa | GeN | Ag | x | y | z | w | 老化前记录 | 老化后 | 老化后记录 | ||||
实施例12 | - | 80 | 15 | 30 | 200 | - | - | 0.22 | 0.14 | 0 | 0.05 | - | 25.7ns/26mW | 24.1ns | 39.8ns/28mW | |
比较例7 | - | 80 | 15 | 30 | 200 | - | - | 0.22 | 0.11 | 0 | 0.11 | - | - | - | - | 反射率12% |
元素Ml | 膜厚度(纳米) | 组成 | 噪音(dBm) | ||||||||
ZnS-SiO2 | 记录层 | ZnS-SiO2 | AlTa | GeN | Ag | x | y | z | |||
实施例4 | - | 80 | 18 | 30 | 200 | - | - | 0.2 | 0.18 | 0 | -49.6 |
实施例13 | Tb | 80 | 18 | 30 | 200 | - | - | 0.2 | 0.14 | 0.03 | -59.7 |
实施例14 | Gd | 80 | 18 | 30 | 200 | - | - | 0.2 | 0.14 | 0.04 | -58.8 |
实施例15 | - | 90 | 16 | 17 | - | 3 | 150 | 0.31 | 0.17 | 0 | - |
实施例16 | Tb | 90 | 16 | 17 | - | 3 | 150 | 0.31 | 0.15 | 0.03 | - |
实施例17 | Gd | 90 | 16 | 17 | - | 3 | 150 | 0.31 | 0.15 | 0.04 | - |
元素Ml | 膜厚度 | 组合物 | 噪音(dBm) | 3T空间抖动性/写入功率 | 备注 | |||||||||||
ZnS-SiO2 | 记录层 | ZnS-SiO2 | AlTa | Ta | Ag | x | y | z | w | 老化前记录 | 老化后 | 老化后记录 | ||||
实施例18 | In | 88 | 15.5 | 24 | - | 4 | 185 | 0.15 | 0.07 | 0.11 | 0.04 | - | 23.2ns/32mW | - | - | 记录线速度28.8m/s |
实施例19 | In | 80 | 18 | 23 | - | 2 | 200 | 0.17 | 0.04 | 0.13 | 0.08 | - | 34.9ns/42mW | - | - | 记录线速度38.4m/s |
比较例8 | In | 88 | 15.5 | 24 | - | 4 | 185 | 0.16 | 0 | 0.13 | 0.04 | - | - | - | - | 无法形成非晶态记录 |
比较例9 | - | 80 | 15 | 30 | 200 | - | - | 0.22 | 0 | 0 | 0.05 | - | - | - | - | 无法形成非晶态记录 |
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- 2003-03-03 TW TW092104437A patent/TWI248612B/zh not_active IP Right Cessation
- 2003-03-05 US US10/378,990 patent/US7166415B2/en not_active Expired - Lifetime
- 2003-03-05 CN CN03120231.4A patent/CN1272785C/zh not_active Expired - Fee Related
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2005
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US7659049B2 (en) | 2010-02-09 |
US20050265215A1 (en) | 2005-12-01 |
JP2010030303A (ja) | 2010-02-12 |
DE60309232D1 (de) | 2006-12-07 |
EP1343154B1 (en) | 2006-10-25 |
TW200306554A (en) | 2003-11-16 |
EP1343154A2 (en) | 2003-09-10 |
EP1343154A3 (en) | 2004-08-04 |
TWI248612B (en) | 2006-02-01 |
US20030214857A1 (en) | 2003-11-20 |
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DE60309232T2 (de) | 2007-09-06 |
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