CN1441316A - 光掩模的制造方法和使用该光掩模的半导体装置制造方法 - Google Patents
光掩模的制造方法和使用该光掩模的半导体装置制造方法 Download PDFInfo
- Publication number
- CN1441316A CN1441316A CN03105272A CN03105272A CN1441316A CN 1441316 A CN1441316 A CN 1441316A CN 03105272 A CN03105272 A CN 03105272A CN 03105272 A CN03105272 A CN 03105272A CN 1441316 A CN1441316 A CN 1441316A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- exposure
- photomask
- size
- mask pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000005259 measurement Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 30
- 238000013461 design Methods 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 6
- 238000005457 optimization Methods 0.000 claims description 4
- 230000004075 alteration Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 description 10
- 230000010363 phase shift Effects 0.000 description 9
- 239000000047 product Substances 0.000 description 4
- 238000000638 solvent extraction Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24B—MANUFACTURE OR PREPARATION OF TOBACCO FOR SMOKING OR CHEWING; TOBACCO; SNUFF
- A24B15/00—Chemical features or treatment of tobacco; Tobacco substitutes, e.g. in liquid form
- A24B15/10—Chemical features of tobacco products or tobacco substitutes
- A24B15/16—Chemical features of tobacco products or tobacco substitutes of tobacco substitutes
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24B—MANUFACTURE OR PREPARATION OF TOBACCO FOR SMOKING OR CHEWING; TOBACCO; SNUFF
- A24B15/00—Chemical features or treatment of tobacco; Tobacco substitutes, e.g. in liquid form
- A24B15/18—Treatment of tobacco products or tobacco substitutes
- A24B15/28—Treatment of tobacco products or tobacco substitutes by chemical substances
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24D—CIGARS; CIGARETTES; TOBACCO SMOKE FILTERS; MOUTHPIECES FOR CIGARS OR CIGARETTES; MANUFACTURE OF TOBACCO SMOKE FILTERS OR MOUTHPIECES
- A24D1/00—Cigars; Cigarettes
- A24D1/18—Selection of materials, other than tobacco, suitable for smoking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002054774A JP3708058B2 (ja) | 2002-02-28 | 2002-02-28 | フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法 |
JP054774/2002 | 2002-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1441316A true CN1441316A (zh) | 2003-09-10 |
CN1223898C CN1223898C (zh) | 2005-10-19 |
Family
ID=27750983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03105272XA Expired - Lifetime CN1223898C (zh) | 2002-02-28 | 2003-02-26 | 光掩模的制造方法和使用该光掩模的半导体装置制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7008731B2 (zh) |
JP (1) | JP3708058B2 (zh) |
KR (1) | KR100509996B1 (zh) |
CN (1) | CN1223898C (zh) |
TW (1) | TW571176B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1641485B (zh) * | 2004-01-16 | 2011-05-25 | 株式会社东芝 | 曝光***及评价光刻工艺的方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3825741B2 (ja) * | 2002-11-14 | 2006-09-27 | 株式会社東芝 | フォトマスクの評価方法および半導体装置の製造方法 |
JP3825744B2 (ja) * | 2002-12-02 | 2006-09-27 | 株式会社東芝 | フォトマスクの製造方法及び半導体装置の製造方法 |
US20050234684A1 (en) * | 2004-04-19 | 2005-10-20 | Mentor Graphics Corp. | Design for manufacturability |
US20060069958A1 (en) * | 2004-05-09 | 2006-03-30 | Sawicki Joseph D | Defect location identification for microdevice manufacturing and test |
JP4709511B2 (ja) * | 2004-08-18 | 2011-06-22 | 株式会社東芝 | マスクパターン補正方法、マスクパターン補正プログラム、フォトマスクの作製方法及び半導体装置の製造方法 |
JP4904034B2 (ja) * | 2004-09-14 | 2012-03-28 | ケーエルエー−テンカー コーポレイション | レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体 |
JP4709639B2 (ja) | 2005-12-12 | 2011-06-22 | 株式会社東芝 | マスクパターン評価方法及び評価装置 |
JP2007187998A (ja) * | 2006-01-16 | 2007-07-26 | Toshiba Corp | 投影露光マスク合否判定方法システム及び投影露光マスク合否判定方法 |
US7553678B2 (en) * | 2006-03-17 | 2009-06-30 | United Microelectronics Corp. | Method for detecting semiconductor manufacturing conditions |
JP4851924B2 (ja) * | 2006-12-08 | 2012-01-11 | 株式会社東芝 | 危険箇所集計方法、パターン修正方法およびプログラム |
JP2008242112A (ja) * | 2007-03-28 | 2008-10-09 | Toshiba Corp | マスクパターン評価装置及びフォトマスクの製造方法 |
DE102007032958A1 (de) * | 2007-07-14 | 2009-01-15 | Carl Zeiss Sms Gmbh | Verfahren zur Ermittlung lithographisch relevanter Maskendefekte |
JP4594994B2 (ja) * | 2008-03-24 | 2010-12-08 | 株式会社東芝 | マスクパターンデータ生成方法、マスクの製造方法、半導体装置の製造方法及びパターンデータ生成プログラム |
JP4838866B2 (ja) * | 2009-02-10 | 2011-12-14 | キヤノン株式会社 | 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。 |
JP2012068454A (ja) * | 2010-09-24 | 2012-04-05 | Toshiba Corp | パターン形状判定方法、パターン形状検証方法、パターン補正方法、リソグラフィ用マスクの製造方法および半導体装置の製造方法 |
JP2012141372A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | マスク判定方法、露光方法および半導体装置の製造方法 |
JP6338368B2 (ja) * | 2013-12-25 | 2018-06-06 | キヤノン株式会社 | パターンの光学像の評価方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5202748A (en) | 1991-06-07 | 1993-04-13 | Litel Instruments | In situ process control system for steppers |
JPH0651497A (ja) | 1992-07-28 | 1994-02-25 | Fujitsu Ltd | レチクル作製プロセス別寸法良否判別方法およびそのための手段を具備したレチクル |
JP3339174B2 (ja) | 1993-11-08 | 2002-10-28 | ソニー株式会社 | フォトマスクの製造方法、露光方法及び半導体装置の製造方法 |
JPH08202020A (ja) | 1995-01-31 | 1996-08-09 | Sony Corp | フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法 |
US6016357A (en) | 1997-06-16 | 2000-01-18 | International Business Machines Corporation | Feedback method to repair phase shift masks |
US5965306A (en) | 1997-10-15 | 1999-10-12 | International Business Machines Corporation | Method of determining the printability of photomask defects |
US5877861A (en) | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
US6366822B1 (en) | 1998-08-04 | 2002-04-02 | Advanced Micro Devices, Inc. | Statistical process window design methodology |
JP3535390B2 (ja) | 1998-09-03 | 2004-06-07 | 株式会社東芝 | 露光マスクの検査方法および測長箇所を探索するプログラムを記録した記録媒体 |
JP2000181045A (ja) | 1998-12-10 | 2000-06-30 | Matsushita Electronics Industry Corp | パターン補正方法 |
JP4057733B2 (ja) | 1999-02-22 | 2008-03-05 | 株式会社東芝 | 転写パターンのシミュレーション方法 |
JP4158266B2 (ja) | 1999-03-11 | 2008-10-01 | 凸版印刷株式会社 | フォトマスク外観検査装置 |
-
2002
- 2002-02-28 JP JP2002054774A patent/JP3708058B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-26 CN CNB03105272XA patent/CN1223898C/zh not_active Expired - Lifetime
- 2003-02-27 TW TW092104204A patent/TW571176B/zh not_active IP Right Cessation
- 2003-02-27 US US10/374,094 patent/US7008731B2/en not_active Expired - Lifetime
- 2003-02-27 KR KR10-2003-0012283A patent/KR100509996B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1641485B (zh) * | 2004-01-16 | 2011-05-25 | 株式会社东芝 | 曝光***及评价光刻工艺的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW571176B (en) | 2004-01-11 |
KR20040002443A (ko) | 2004-01-07 |
CN1223898C (zh) | 2005-10-19 |
US7008731B2 (en) | 2006-03-07 |
TW200307850A (en) | 2003-12-16 |
JP3708058B2 (ja) | 2005-10-19 |
JP2003255509A (ja) | 2003-09-10 |
US20030162105A1 (en) | 2003-08-28 |
KR100509996B1 (ko) | 2005-08-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170803 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211231 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20051019 |
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CX01 | Expiry of patent term |