CN1318651C - Plating apparatus, plasting method and method for mfg. semiconductor device - Google Patents
Plating apparatus, plasting method and method for mfg. semiconductor device Download PDFInfo
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- CN1318651C CN1318651C CNB018233600A CN01823360A CN1318651C CN 1318651 C CN1318651 C CN 1318651C CN B018233600 A CNB018233600 A CN B018233600A CN 01823360 A CN01823360 A CN 01823360A CN 1318651 C CN1318651 C CN 1318651C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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Abstract
The present invention relates to a plating device, a plating method and a method for manufacturing a semiconductor device. The present invention forms plated films with various combinations by one conveying guide rail and also aims to form a high quality plated film with uniform film thickness on the surfaces of a leading wire frame and a leading wire. In the plating device, a plurality of plating bathe grooves are arranged under the conveying guide rail, and the plating bathe grooves are provided with plating liquid holding bathe grooves. The plated films formed on an electric conduction component 21 can be selected by causing plating liquid to move in the plating bathe grooves and the plating liquid holding bathe grooves. Therefore, the present invention can form the plated films with various combinations on the electric conduction component 21 by one conveying guide rail.
Description
Technical field
The present invention relates to the manufacture method that forms plating apparatus, method for plating and the semiconductor device of coatings on the lead-in wire of main raw and the lead frame being with copper or iron-nickel alloy.
Background technology
When the coating at the surface coverage Sn of conductive component monomer or Sn alloy, this conductive component has excellent electroconductibility and physical strength.And this conductive component also has erosion resistance that Sn monomer or Sn alloy had and good scolding tin tack.Therefore, this conductive component be widely used in that various terminals, junctor, lead-in wire etc. are electric, electronic device field and field of cables etc.
With semiconductor-chip-mounting on circuitry substrate the time, form coating at the outer lead part of semi-conductor chip, improve the scolding tin tack of outer lead part.The typical example of this plated film is scolding tin (a Sn-Pb alloy), because scolding tin tack, erosion resistance etc. are good, and are widely used.
Fig. 7 is the A-A sectional view of semiconductor lead frame shown in Figure 6.For example, conductive component 21 is made of copper, copper alloy or iron-nickel alloy.Form the two-layer plated film of differing materials on the surface of these conductive components 21.For example, form the first filming 22 of Sn and second plated film 23 of Sn-Bi in regular turn.Here, if the thickness of the first filming 22 is t1, the thickness of second plated film 23 is t2, then be set at about 3～15 μ m at t1, t2 is set at about 1～5 μ m, it is about 0.1～0.5 that t2/t1 is set at, under this condition, aspect cost, the bond strength of scolding tin tack, thermotolerance, scolding tin and all can obtain good characteristic with the welding strength aspect of the weld part of aluminum steel etc.
Fig. 8 is the layout drawing of automatic plating apparatus integral body.At first, clean in the bath 1, carry out the pre-treatment on conductive component 21 surfaces, remove the adhesivity of obstruction scolding tin plating epithelium and the organic pollution materials of scolding tin tack in alkaline electrolysis.Then, after conductive component 21 is cleaned in washing bath 2, in chemical corrosion bath 3, carry out chemical corrosion and handle (being to utilize redox reaction to handle basically).
Then, after conductive component 21 is cleaned in washing bath 4, in oxygen activation bath 5, remove at washing bath 4 adherent oxide films.In washing bath 6, clean again, then, carry out plating at scolding tin plating apparatus 7 and handle.Because the scolding tin plating bath is the strongly-acid material, so the coated surface behind the plating forms acidity.This surface is along with time lapse, and plated film is understood variable color, and the scolding tin tack can deterioration.Therefore, in washing bath 8, neutralizing treatment bath 9, with the residual acid of plating surface, remove adsorbed organic matter in.Afterwards, conductive component 21 washes bath 10 with water, hot wash is washed with bath 11, carries out drying by drying installation 12.
Fig. 9 is the sectional view of the B-B direction of chemical corrosion bath 3 shown in Figure 8.
Effect in this chemical corrosion bath 3 as mentioned above.The composition of this plating apparatus is described here.In this plating apparatus, lateral transfer thruster 13 and conveying 14 all can move at above-below direction.The upper limit position of their movable range and lower position are fixed, and lateral transfer thruster 13 and conveying 14 move back and forth between this upper limit position and lower position.Suspension hook 15 hangs on the conveying 14 with appropriate intervals according to the operation purpose.Usually, its distance be adjacent bath in the heart distance.Then, the plating auxiliary frame 16 of the conductive component 21 of wanting plating of playing hangs on this suspension hook 15, is arranged on this plating apparatus.Below, lateral transfer thruster 13 is described.The distance that the lateral transfer thruster is 13 basically with adjacent bath in the heart distance about equally.This lateral transfer thruster 13 is arranged on the arm, when to the operator after suspension hook 15 is carried a span, just return by this amount.And this lateral transfer thruster 13 is carried a span at upper limit position with suspension hook 15 by conveying 14, makes lateral transfer thruster 13 return this amount in the lower position by conveying 14.In addition, conveying 14 moves at above-below direction, and is motionless at direct of travel.The function that realizes this plating apparatus repeatedly by this operation.
In above-mentioned this plating apparatus, a plating pre-treatment streamline and a scolding tin plating streamline are arranged.For example, have on the conductive component 21 with the plated film of Sn form the first filming 22, with the Sn-Bi plated film form the situation of second plated film 23 and on conductive component 21 with the plated film formation the first filming 22 of Sn, form the situation of second plated film 23 with the Sn-Ag plated film.In this case, both all can use identical Sn plating bath the first filming, and the plating bath difference that second plated film uses.Therefore, after being to form the former plated film on the conductive component 21, plating apparatus is temporarily stopped.Then, the plating bath in the bath is being replaced by the plating bath that the latter uses, conductive component 21 is being formed the latter's plated film.
And in above-mentioned plating apparatus, the plating bath is accommodated in the electrode that forms the plating bath of plated film on the conductive component 21 and be used to supply with electric current.Here, the electrode that is arranged in this plating bath mainly uses as anode in plating.Conductive component 21 be impregnated in this plating bath, and conductive component 21 forms negative electrode, forms plated film on conductive component 21.At this moment, conductive component 21 is arranged on the rectangle plating auxiliary frame 16 that is made of two principal posts and carries out the plating operation.As conductive component 21, for example, the different conductive component of package size 21 arranged, encapsulate the different conductive component 21 of the outward appearance conductive component 21 different etc. with material.When being to form thick plated film on these conductive components 21, in plating bath, applying strong current density and carry out the plating operation.Like this, mainly form the plated film of all thickness by the power that changes current density.
In plating, form thickly more the closer to the big more plated film of end current density of conductive component 21, this is known.In addition, the upper limit that is suitable for the current density of plating bath is called as maximum current density.By utilizing this maximum current density, can shorten the plating time.But when surpassing this maximum current density, the plating face just produces clouding, and produces gloomy spot and dispersed is separated out.And, when reaching capacity current density, just can not form plated film.This also is known.
Summary of the invention
First problem is as follows, as mentioned above, has a plating pre-treatment streamline and a scolding tin plating streamline in this scolding tin plating apparatus.Therefore, when being to form the plated film of multiple combination on the conductive component 21, when existing in the combination of changing plated film, the problem that can not work continuously.In other words, in this plating apparatus,, form the plated film of like combinations continuously though conductive component 21 can be impregnated in the ready plating bath in regular turn.But because according to the purposes difference of wanting the conductive component 21 of plating, the plating bath difference of use, existence will spend and be used to change the unnecessary time of plating bath and the problem of cost.
In addition, the management of scolding tin plating streamline also will expend very big cost.For example, behind the plating bath that uses a plating bath, use other different plating baths sometimes.At this moment, if last plating bath is not removed in the plating bath reliably, then the liquid of back one plating bath constitutes and will change.In addition, different if the plating bath that uses constitutes, then the anode of this plating bath use is also different, must change.In a word, exist plating bath management or the management of plating bath etc. to safeguard need the cost a lot of money problem in time of aspect.
Second problem is as follows, and as mentioned above, in this scolding tin method for plating and used plating apparatus thereof, the plating bath is accommodated in the electrode that conductive component 21 forms the plating bath of plated films and is used to supply with electric current.Then, use this plating apparatus to form plated film at conductive component 21.But conductive component 21 is according to its purposes, and its surface-area size and appearance has various patterns.Therefore, to the conductive component 21 as negative electrode, which part that is not its surface all flows through uniform electric current.In other words, the each several part of conductive component 21 is not to have equidistant with anode.And in this plating apparatus, conductive component 21 is arranged on and carries out the plating processing on the rectangle plating auxiliary frame 16 that is made of two principal posts.Therefore, to conductive component 21, current density is concentrated more near the end of conductive component 21 more, and plated film forms thickly more.And the central part of conductive component 21 forms thinly than end plated film.In addition, when on conductive component 21, forming plated film, exist the strong position of current density to form the problem of plated film easily.
The present invention develops in view of above-mentioned existing issue, the invention provides a kind of manufacture method of semiconductor device, on the lead-in wire that with Cu or Fe-Ni is main material, form the first filming layer that the alloy by Sn metal and Bi metal constitutes, the coatings that constitutes by the alloy of Sn metal and Bi metal in the most surperficial formation of lead-in wire, it is characterized in that described the first filming layer contains described Bi metal below the 1 weight % degree with respect to described Sn metal.
The invention provides the manufacture method of another kind of semiconductor device, preparation is the lead-in wire of main material with Cu or Fe-Ni, semi-conductor chip is connected electrically on the described lead-in wire, seal by package, the part of described lead-in wire is exposed, will be from the described lead-in wire that described package exposes crooked or carry out electrometric determination by described lead-in wire, it is characterized in that, on the surface of described lead-in wire, formation is made of the alloy of Sn metal and Bi metal and contains the first filming layer of the described Bi metal below the 1 weight % degree with respect to this Sn metal, forms the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial.
The invention provides the manufacture method of another kind of semiconductor device, the encapsulation of the described semi-conductor chip of selfsealings exposed and form the first filming layer that the alloy by Sn metal and Bi metal constitutes, form the lead-in wire of the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial, be fixed on the required conductive pattern, it is characterized in that described the first filming layer contains described Bi metal below the 1 weight % degree with respect to described Sn metal.
The invention provides a kind of semiconductor device, it comprises: lead-in wire, and it is a main material with Cu or Fe-Ni; Semi-conductor chip, it is electrically connected with described lead-in wire; Sealing member, it exposes the part of described lead-in wire, it is characterized in that, on the surface of described lead-in wire, formation is made of the alloy of Sn metal and Bi metal and contains the first filming layer of the described Bi metal below the 1 weight % degree with respect to this Sn metal, forms the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial.
Description of drawings
Fig. 1 is the figure that explanation is used for the plating streamline of plating apparatus of the present invention;
Fig. 2 is the figure that explanation is used for the plating streamline of plating apparatus of the present invention;
Fig. 3 is the figure that explanation is used for the plating auxiliary frame of plating apparatus of the present invention;
Fig. 4 overlooks the layout drawing that is carried out the figure of plating operation by the plating bath that is used for plating apparatus of the present invention;
Fig. 5 is the figure of the manufacture method of explanation semiconductor device of the present invention;
Fig. 6 is the figure that explanation is fixed with the lead frame of the semi-conductor chip that carries out the present invention and existing plating;
Fig. 7 is the sectional view of seeing from the A-A direction of the semiconductor lead frame shown in Figure 6 that constitutes of the present invention and existing two-layer plated film;
Fig. 8 is the figure of the layout of explanation the present invention and existing automatic plating apparatus integral body;
Fig. 9 is the sectional view of seeing from the B-B direction of the chemical corrosion bath of the present invention and existing automatic plating apparatus integral body shown in Figure 7.
Embodiment
At first, be described as follows plating apparatus as embodiment 1, with reference to Fig. 1, Fig. 2 and Fig. 7, this plating apparatus has plating pre-treatment streamline and plating streamline, the plating bath that has the coatings that is used to form a plurality of patterns on this plating streamline is respectively equipped with plating bath at this plating bath and takes in bath.
Fig. 1 is the layout drawing of the function of the brief description scolding tin plating streamline that is used to implement plating apparatus of the present invention.On this scolding tin plating streamline, preimpregnation bath 43, the first plating bath 44, the second plating bath 45, the 3rd plating bath 46, washing bath 47 are set under conveying 42.Utilize pitch ground of 41 1 pitches of lateral transfer thruster to carry, go up at conductive component 21 (with reference to Fig. 7) with these baths and form plated film.This mechanism and prior art are same.
The present invention only is provided with the form that plating bath is taken in bath on demand according to the plating bath.For example, as shown in Figure 1, at the first plating bath 44 plating bath is not set and takes in bath, at the second plating bath 45 first plating bath is set and takes in bath 49, at the 3rd plating bath 46 second plating bath is set and takes in bath 50.In this case, in order to apply flexibly working space effectively, under the plating bath, be provided with plating bath take in bath (following with plating bath take in bath be called take in bath).Thereby can be when plating bath to be taken in, the short period of time is taken in plating bath.Thus, on this scolding tin plating streamline, can form the plated film of multiple combination continuously to conductive component 21 by a conveying according to purposes.
Fig. 2 is the layout drawing of the function of the brief description scolding tin plating streamline that is used to implement plating apparatus of the present invention.On this scolding tin plating streamline, preimpregnation bath 53, the first plating bath 54, the second plating bath 55, the 3rd plating bath 56, washing bath 57 are set under conveying 52.Utilize pitch ground of 51 1 pitches of lateral transfer thruster to carry, on conductive component 21, form plated film with these baths.
Bath is taken in all plating bath settings.For example, as shown in Figure 2, be provided with at the first plating bath 54 and first take in bath 59, be provided with second at the second plating bath 55 and take in bath 60, be provided with the 3rd at the 3rd plating bath 56 and take in bath 61.In this case, also, under the plating bath, be provided with and take in bath as with as described in Fig. 1.Thus, on this scolding tin plating streamline, can form the plated film of multiple combination continuously according to purposes.
Specify embodiment 1 below, the structure for conveying of this scolding tin plating streamline is identical with above-mentioned Fig. 9.For example, on the scolding tin plating streamline of this Fig. 1, the plating bath of the Sn that in the first plating bath 44, packs into, the plating bath of the Sn-Bi that in the second plating bath 45, packs into, the plating bath of the Sn-Ag that in the 3rd plating bath 46, packs into.The purposes of the conductive component 21 of these plating baths after according to plating is selected required plating bath.And in unnecessary plating bath, the plating bath in the bath moves to taking in bath.But, in the present embodiment, in the first plating bath 44 of the plating bath of the Sn that packs into, plating bath always being housed, conductive component 21 impregnated in the plating bath of this Sn.Its result, at the individual layer plated film of conductive component 21 formation Sn, or the first layer forms Sn, the plated film of second layer formation Sn-Bi or Sn-Ag.In addition, the structure of lead member is identical with Fig. 7, so symbol is identical.
The first, the situation that only forms the first filming 22 of Sn individual layer at conductive component 21 is described.Here, the plating bath of Sn always is housed in the first plating bath 44 of the plating bath that Sn is housed, on conductive component 21, forms the plated film of Sn.At first, the conductive component of crossing in above-mentioned plating pre-treatment pipeline processes 21 is removed the hydrogen-oxygen film on surface at preimpregnation bath 43, and impregnated in the plating bath of Sn of the first plating bath 44.Therebetween, in the second plating bath 45 and the 3rd plating bath 46, owing on conductive component 21, do not form plated film, take in bath 50 and move so the interior plating bath of bath is taken in bath 49 and second to first.Though the conductive component 21 that forms the plated film of Sn at the first plating bath 44 is transported to the second plating bath 45, the 3rd plating bath 46.But owing to do not have plating bath in these plating baths 45,46, so do not form plated film.Then, it is clean to form the surface of conductive component 21 of plated film at washing bath 47.Its result is at the individual layer plated film of conductive component 21 formation Sn.
The second, the situation that forms the first filming 22 and second plated film 23 at conductive component 21 is described.At first, because the plating bath of Sn always is housed, on conductive component 21, form the first filming 22 of Sn in the first plating bath 44.Then, according to the purposes of this conductive component 21, select to form the plating bath of second plated film 23.Here, at first under the situation of second plated film 23 that forms Sn-Bi, the Sn-Ag plating bath of the 3rd plating bath 46 is moved to second take in bath 50.Secondly, under the situation of second plated film 23 that forms Sn-Ag, the Sn-Bi plating bath of the second plating bath 45 is moved to first take in bath 49.Make the Sn-Ag plating bath take in bath 50 and return the 3rd plating bath 46 from second.Its result forms Sn and Sn-Bi or Sn and the two-layer plated film of Sn-Ag at conductive component 21.
Here, in the plating apparatus of Fig. 1, the metallic substance of the plating bath of the first plating bath 44 is Sn, and the metallic substance of the plating bath of the second plating bath 45 is Sn-Bi, and the metallic substance of the plating bath of the 3rd plating bath 46 is Sn-Ag.Except that these metals are that identical liquid constitutes with solution their solvent of dissolving, so can be at conductive component 21 formation plated films continuously.But, also constitute different plating baths sometimes and form plated film at conductive component 21 with liquid.At this moment, the plating bath of the pure water of packing into is set between the plating bath,, prevent that different plating baths from mixing mutually by the surface of the conductive component behind the plating 21 is cleaned.When not needing this pure water, put it into and take in bath.Thus, can constitute irrespectively, on conductive component 21, form continuously the plated film of multiple combination by a conveying with the liquid of plating bath.
Specify embodiment 2 below.For example, on the scolding tin plating streamline of this Fig. 2, in the first plating bath 54, pack into the plating bath of Sn, Sn: Bi=98 (weight %) packs in the second plating bath 55: the plating bath of 2 (weight %), Sn: Bi=43 (weight %) packs in the 3rd plating bath 56: the plating bath of 57 (weight %).These plating bath is selected the plating bath of needs according to the purposes of conductive component 21, the plating bath of unwanted plating bath is moved to take in bath.Its result, form Sn or Sn: Bi=98 (weight %) at conductive component 21: the individual layer plated film of 2 (weight %), perhaps forming the first layer is Sn, the second layer is Sn: Bi=43 (weight %): the two-layer plated film of 57 (weight %), perhaps forming the first layer is Sn: Bi=98 (weight %): 2 (weight %), the second layer are Sn: Bi=43 (weight %): the two-layer plated film of 57 (weight %) etc.
In this form,, can use Sn: Bi=98 (weight %): the plating bath of 2 (weight %) in order to form the first filming 22 at conductive component 21.At this moment, by making the Bi that contains in the plating bath about several percentage points, can significantly suppress the generation of needle crystal at the first filming 22.
Like this, in the present invention, the plating bath that the different multiple plating bath of plating bath structure is housed is set, and is provided with as required or all at this plating bath and takes in bath.According to the purposes of conductive component 21, plating bath is moved in above-mentioned two baths.Its result can be formed the plated film of multiple combination continuously by a conveying.
In a word, can on conductive component 21, form the plated film of multiple combination continuously by a conveying.Thus, though need plating apparatus be stopped at present, just do not need to change the plating bath in the bath in the present invention.Its result can shorten the activity duration significantly, and can save the work of changing plating bath.At present, when changing plating bath in same bath, each plating bath can be sneaked into each other.But as mentioned above, liquid tissue is identical in the present invention.Therefore,, also can suppress the variation of liquid tissue, can reduce plating bath management and plating bath, plating significantly with the work in the maintenance of equipment etc. even exist liquid to sneak into.
In addition, an also available conveying forms the plated film of multiple combination continuously.For example, have: in the first plating bath, plating bath is moved to first take in bath, in second and third plating bath, form the method for plated film; Or in first and second plating bath, plating bath is moved to first and second and take in bath, only in the 3rd plating bath, form the situation etc. of the plated film of individual layer.By in adjacent plating bath, putting into the plating bath of same composition, can on conductive component 21, form thick plated film.
No matter under any circumstance, as mentioned above,, also can form the plated film of multiple combination continuously between two baths by a conveying by plating bath is moved.
As mentioned above, be that example is illustrated with the situation of scolding tin plating, but this plating apparatus can be not limited to the scolding tin plating and use.Zinc-plated, copper facing, nickel plating etc. are for example arranged.In these cases, also available this plating apparatus is formed the plated film of multiple combination continuously on conductive component 21 by a conveying.
Below, to embodiment 2, with reference to Fig. 3, Fig. 4 and Fig. 7, with regard to the plating auxiliary frame and use the method for plating of this plating auxiliary frame to describe, wherein, described plating auxiliary frame has four principal posts, is rectangular structure.
The simple expression of Fig. 3 is used to implement the skeleton diagram of the plating auxiliary frame of method for plating of the present invention.Fig. 4 overlooks the conductive component 21 (with reference to Fig. 7) that is arranged on the plating auxiliary frame 72 shown in Figure 3 to impregnated in layout drawing in the plating bath 71.Here, in plating, main is that negative electrode, electrode are that the situation of anode 73 describes with conductive component 21 just.
Be characterised in that in the present invention, when conductive component 21 is formed plated film, use the plating auxiliary frame 72 of the rectangular parallelepiped that constitutes with four principal posts, thus,, apply current density more equably different various conductive components 21 such as surface-area.
Specifically, for plating bath, has the current density range that when carrying out the plating operation, is suitable for each plating bath.Can form high-quality plated film by carrying out the plating operation with the current density in this suitable scope.Conductive component 21 is set and this plating auxiliary frame 72 impregnated in the plating bath of plating bath 71 together at the plating auxiliary frame 72 of the rectangular parallelepiped that constitutes by four principal posts.This plating auxiliary frame 72 is formed by conductive component, so and conductive component 21 integrally formed negative electrodes.As shown in Figure 4, conductive component 21 is arranged on the center of plating auxiliary frame 72, so the principal post of plating auxiliary frame 72 is between anode 73 and conductive component 21.Like this, the part that most of current density is strong is towards the principal post of plating auxiliary frame 72.And the position a little less than current density in addition, on conductive component 21, form plated film, its result, can can form the plated film that uniform plated film is formed distribution by more uniform coating film thickness to the big conductive component 21 of the surface-area conductive component 21 grade surface-area different various conductive components 21 little with surface-area.
For example, there is the big conductive component of pair surface-area 21 to form the situation of plated film.Under the big situation of surface-area, the central part of conductive component 21 and end current density to apply situation variant.But, as mentioned above, place between conductive component 21 and the anode 73 by the principal post that makes plating auxiliary frame 72, can make the part of wanting plating avoid the strong part of current density.Its result, near the centre portions of the conductive component 21 of anode 73 with away from the end of the conductive component 21 of anode 73, the difference of current density diminishes.Form plated film on the surface of this conductive component 21 with uniform thickness and form uniform plated film.
Sometimes the first layer that forms as the free plating of Pb (Off リ-メ Star キ) is that Sn, the second layer are the plated film of Sn-Bi.At this moment, the plated film of the Sn-Bi of the second layer carries out plating in the scope of 1～5 μ m.Here, do not use plating auxiliary frame 72 and carry out plating, in this case, according to above-mentioned electroplating characteristic, the deviation that the plated film thickness can occur especially at the end and the central part of conductive component 21.Or produce the part that does not form plated film at the central part of conductive component 21.But,, form plated film on the surface of conductive component 21 with uniform thickness and form uniform plated film by using plating auxiliary frame 72.
As mentioned above, for the embodiment under the anodic situation is illustrated, still, be under the situation of negative electrode with regard to electrode 73 at electrode 73, also can on conductive component 21, form plated film equally.
At last, with reference to Fig. 5～Fig. 7,, the method for plating of the lead-in wire that is used for semiconductor device is described as embodiment 3.
At first, plating in the first filming 22 on the surface of conductive components 21 such as copper monomer, copper alloy or iron-nickel alloy, at plating under the situation of main metallic substance for the plating bath that constitutes by the Sn monomer, especially the surface of the first filming 22 forms level and smooth epithelium.But, as the first filming 22 platings under the situation of the such two kinds of metals of Sn-Bi, the first filming has the feature that the big Bi of ionization tendency can preferentially separate out.Because this phenomenon, the surface of the first filming 22 forms epithelium with non-level and smooth precipitation particles.
Problem described later when increasing lead frame with operation that processing unit (plant) contacts, can take place in its result.For example in the operation of bending machining, has the operation that makes the energising terminal contact and judge the quality of IC with lead frame.In this operation, above-mentioned non-level and smooth particle of preferentially separating out can come off, and thus, the particle that comes off can be attached between the lead-in wire, thereby causes condition of poor occurring in the quality of IC is judged.Have following situation, when the feed wire frame, its surperficial friction resistance reduces, can rest on transfer mechanism that lead frame contacts on.
Here, specifically narrated the problem that takes place in the bending machining.Fig. 5 is the synoptic diagram that lead frame is carried out the model of bending machining.As shown in the figure, cut off at lead frame 82, problem can take place during bending machining with 83 pairs of semiconductor devices 81 of stamp.
At first, the lead frame 82 of having implemented plating is arranged on pedestal 84A, the B.Then, use pedestal 84A and lead bearing the mechanism 85 fixedly package and the lead frame 82 of semiconductor device 81.At this moment, the front end of lead frame 82 is arranged on the pedestal 84B, cuts off lead frames 82 with stamp 83, other parts are carried out bending machining.At this moment, the bottom surface of stamp 83 contacts with the surface of lead frame 82, and the precipitation particles of thickization can be as on the bottom surface of bits attached to stamp 83.Perhaps generation or precipitation particles are attached to the phenomenon on the lead frame 82.
And the lead frame that uses has lead-in wire about 200, the thin spaceization of narrow formation 0.4mm at present.Itself also diminishes semiconductor device significantly, can cause quality bad so can know described dirt settling by inference.Thus, to carry out plating be ideal in semi-conductive manufacturing process to the plating bath that is made of Sn monomer etc. of above-mentioned main metallic substance.
On the other hand, we know, in the plated film that main metal is made of the Sn monomer, sneak into the Bi of trace in following manufacture method.
As described in embodiment 1, in plating apparatus of the present invention, can freely select plating bath, can on the surface of conductive component 21, form the monomeric the first filming 22 of Sn.But, as described in embodiment 2, when being to carry out plating on the conductive component 21, owing to use plating auxiliary frame 72, so the surface of plating auxiliary frame 72 also forms plated film.Plating auxiliary frame 72 is cleaned in operation thereafter etc., and the plated film of plating auxiliary frame 72 self is come off.But, in any case in the plating bath that the monomeric metallic substance of Sn constitutes, also can sneak into the Bi of denier owing on a transportation flow waterline, will use plating auxiliary frame 72 repeatedly.As the Bi that also can sneak into denier on the anode of electrode 73 uses as impurity.Therefore, in the monomeric plating bath of Sn also relatively Sn sneak into Bi to a certain extent.In fact, though the first filming 22 is the plated films that are made of the Sn monomer, there is the Bi of denier in also might epithelium and forms.
Therefore, the Bi that just sneaks into which kind of degree in the first filming 22 can the generation problem analyze.Under the situation of the Bi that contains 0～0.5 weight % with respect to Sn precipitation particles can not take place.Thickization of precipitation particles can take place under the situation of the Bi that contains 0.5～1.0 weight % with respect to Sn hardly.But precipitation particles also can take place with the magnitude trace that can not become problem sometimes.And under the situation of the Bi that contains 1.0～3.0 weight % with respect to Sn, can become thickization of precipitation particles of the magnitude of problem.And, take place on the first filming surface under the situation of thickization of precipitation particles, certainly, thickization of precipitation particles also can take place in the surface of second plated film 23.
Hence one can see that, if the first filming 22 forms the plated film of Sn monomer or 1% weight following (especially 0～0.5 weight %), then no matter forms the Sn-Bi plated film 23 of any concentration on this first filming 22, and thickization of particle also can not take place.
Below, the semiconductor device that uses lead frame usually with semiconductor-chip-mounting on lead frame, carry out distribution by metal fine.Then, encapsulate, the lead-in wire that exposes from encapsulation is carried out bending machining.Then, this forms monomeric semiconductor device and carries out electrical measurement by lead-in wire, and supplies with the user.Crossing solder flux at user's one square tube is fixed on the electrode that substrate is installed.
Here, plating is handled and can be carried out this processing before semiconductor-chip-mounting and after the encapsulation.Be to carry out to carry out the not processing of plating epithelium of connection section of metal fine under the situation of plating processing before the semiconductor-chip-mounting.And under the situation of encapsulation aftertreatment, the metallic conduction portion of exposing from encapsulation can be impregnated in the plating medicine, have the advantage that does not need the selectivity lining.In addition, though be illustrated with semi-conductor chip, also can encapsulate passive element and their mixture as circuit assembly.As packaged material can thermoplasticity, thermosetting resin and pottery etc. handle for object.
In addition, semi-conductor chip is with on the rectangular electrode that is fixed on the support substrate, and thereafter, the electrode that forms one CSP etc. after encapsulation also can be used.In this case, needing can be to the mechanism of all electrifying electrodes.
As above as can be known, plating apparatus of the present invention can obtain following effect.
First effect, this plating apparatus have the function that plating bath is moved between two baths.An available thus conveying forms plated film individual layer or multiple combination continuously.Therefore, do not need a kind of plated film that on conductive component, forms of every replacing just to change plating bath, do not need to stop plating apparatus temporarily.Therefore, an available conveying forms the plated film of multiple combination continuously on conductive component.Therefore, can shorten the activity duration significantly, and can save the work of changing plating bath.When in same bath, carrying out the replacing of plating bath, do not have each plating bath mutual sneak into phenomenon.Thus, can reduce the operation of plating bath management and plating bath, plating significantly with the maintenance of equipment etc.
Second effect by carrying out the plating operation with method for plating of the present invention, can make most of strong current density avoid conductive component to different various conductive components such as surface-area and carry out plating.Like this, to different conductive components such as surface-area or outward appearances, can carry out plating with the current density in the optimum range of the plating bath that uses and handle.In addition, the electrolysis in the may command plating bath makes current density be applied on the whole surface of conductive component more equably.Its result can form plated film thickness and plated film composition distribution optimizing and uniform plated film to various conductive components.
The 3rd effect, the plating auxiliary frame of the rectangular parallelepiped that four principal posts that use the parts by conductive material to constitute form.Also can form high-quality plated film to different various conductive components such as surface-area thus.
The quadruple effect fruit, the surface that is the conductive component that copper monomer, copper alloy or iron-nickel alloy are such forms in the manufacture method of semiconductor device of multicoating, and the metallic substance that the first filming uses Sn-Bi is that the plating bath of main metallic substance forms plated film with the Sn that sneaks into micro-Bi especially.Thus, can be implemented in not have on the surface of the first filming precipitation particles can take place, also be the manufacture method of semiconductor device of good plated film of atomic thin precipitation particles even perhaps take place.
Claims (10)
1, a kind of manufacture method of semiconductor device, on the lead-in wire that with Cu or Fe-Ni is main material, form the first filming layer that the alloy by Sn metal and Bi metal constitutes, the coatings that constitutes by the alloy of Sn metal and Bi metal in the most surperficial formation of lead-in wire, it is characterized in that described the first filming layer contains described Bi metal below the 1 weight % degree with respect to described Sn metal.
2, the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, described Bi metallographic phase contains below the 0.5 weight % degree for described Sn metal.
3, the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, preparation is provided with the lead frame of the encapsulation of a plurality of sealing semiconductor chips, and forms described coatings on the described lead-in wire that exposes from described encapsulation.
4, a kind of manufacture method of semiconductor device, preparation is the lead-in wire of main material with Cu or Fe-Ni, semi-conductor chip is connected electrically on the described lead-in wire, seal by package, the part of described lead-in wire is exposed, will be from the described lead-in wire that described package exposes crooked or carry out electrometric determination by described lead-in wire, it is characterized in that, on the surface of described lead-in wire, formation is made of the alloy of Sn metal and Bi metal and contains the first filming layer of the described Bi metal below the 1 weight % degree with respect to this Sn metal, forms the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial.
5, the manufacture method of semiconductor device as claimed in claim 4 is characterized in that, implements plating and handles, and prepares described lead-in wire.
6, the manufacture method of semiconductor device as claimed in claim 4 is characterized in that, it is after by described package sealing that plating is handled, and the described lead-in wire that this package is certainly exposed carries out.
7, a kind of manufacture method of semiconductor device, the encapsulation of the described semi-conductor chip of selfsealings exposed and form the first filming layer that the alloy by Sn metal and Bi metal constitutes, form the lead-in wire of the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial, be fixed on the required conductive pattern, it is characterized in that described the first filming layer contains described Bi metal below the 1 weight % degree with respect to described Sn metal.
8, the manufacture method of semiconductor device as claimed in claim 7 is characterized in that, described Bi metallographic phase contains below the 0.5 weight % degree for described Sn metal.
9, a kind of semiconductor device comprises: lead-in wire, and it is a main material with Cu or Fe-Ni; Semi-conductor chip, it is electrically connected with described lead-in wire; Sealing member, it exposes the part of described lead-in wire, it is characterized in that, on the surface of described lead-in wire, formation is made of the alloy of Sn metal and Bi metal and contains the first filming layer of the described Bi metal below the 1 weight % degree with respect to this Sn metal, forms the coatings that the alloy by Sn metal and Bi metal constitutes on the most surperficial.
10, semiconductor device as claimed in claim 9 is characterized in that, described Bi metallographic phase contains below the 0.5 weight % degree for described Sn metal.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000091048 | 2000-03-29 | ||
| JP2000096097 | 2000-03-31 | ||
| JP2001095257A JP3568486B2 (en) | 2000-03-29 | 2001-03-29 | Method for manufacturing semiconductor device |
| PCT/JP2001/010873 WO2003050328A1 (en) | 2000-03-29 | 2001-12-12 | Plating apparatus, plating method, and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1516755A CN1516755A (en) | 2004-07-28 |
| CN1318651C true CN1318651C (en) | 2007-05-30 |
Family
ID=32776680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018233600A Expired - Fee Related CN1318651C (en) | 2000-03-29 | 2001-12-12 | Plating apparatus, plasting method and method for mfg. semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1318651C (en) |
| CA (1) | CA2467037A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8298384B2 (en) * | 2008-01-31 | 2012-10-30 | Century Plating Co. | Method and apparatus for plating metal parts |
| CN102220571B (en) * | 2010-04-15 | 2014-10-15 | 鸿富锦精密工业（深圳）有限公司 | Wet-type coating system |
| CN109264835B (en) * | 2018-10-09 | 2021-08-06 | 天津科技大学 | Continuous electrochemical element extraction system |
| CN114717620B (en) * | 2022-03-29 | 2023-10-13 | 昆山一鼎工业科技有限公司 | Silver plating device for manufacturing etched product of semiconductor lead frame |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1317825A (en) * | 2000-02-28 | 2001-10-17 | 古河电气工业株式会社 | Electroplating appts. |
| KR20010093729A (en) * | 2000-03-29 | 2001-10-29 | 다카노 야스아키 | Plating device |
-
2001
- 2001-12-12 CN CNB018233600A patent/CN1318651C/en not_active Expired - Fee Related
- 2001-12-12 CA CA002467037A patent/CA2467037A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1317825A (en) * | 2000-02-28 | 2001-10-17 | 古河电气工业株式会社 | Electroplating appts. |
| KR20010093729A (en) * | 2000-03-29 | 2001-10-29 | 다카노 야스아키 | Plating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1516755A (en) | 2004-07-28 |
| CA2467037A1 (en) | 2003-06-19 |
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