CN1305197A - Wafer-type thermosensitive oxide resistor - Google Patents
Wafer-type thermosensitive oxide resistor Download PDFInfo
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- CN1305197A CN1305197A CN 00133078 CN00133078A CN1305197A CN 1305197 A CN1305197 A CN 1305197A CN 00133078 CN00133078 CN 00133078 CN 00133078 A CN00133078 A CN 00133078A CN 1305197 A CN1305197 A CN 1305197A
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Abstract
A wafer-type thermosensitive oxide resistor is prepared from cobalt oxide, manganese oxide and nickel oxide through mechanical process including mixing by ball grinding, pre-sinter and pulverizing by ball grinding, or chemical decomposing, co-deposition, or sol-gel process to prepare powder, and die pressing, its advantages include no need of external insulating seal, and high mechanical strength, shock resistance and stability.
Description
The present invention relates to a kind of wafer-type thermosensitive oxide resistor
NTC (negative temperature coefficient) thermistor great majority are to be made by transition metal oxide.Manganese, cobalt, nickel are that NTC (negative temperature coefficient) oxide thermosensitive resistor is better with its resistance, B value consistency, and sensitivity is higher, and steady performance is widely used in fields such as temperature detection and control, temperature-compensating, surge current inhibition.The present invention develops a kind of wafer-type thermosensitive oxide resistor material according to market conditions again simultaneously according to the advantage of NTC (negative temperature coefficient) oxide thermosensitive resistor.This thermistor is applicable to automobile, motorcycle, large-scale engineering machinery, agricultural machinery, the measurement of naval vessel equitemperature.
The object of the invention is, the thermo-sensitive material that the wafer-type thermosensitive oxide resistor of development is made up of cobalt oxide, manganese oxide, through the Mechanical Method ball milling, mix, give sintering, ball milling is made powder again, or adopts the method for chemistry to prepare powder body material, again powder is pressed into disk and makes; Be applicable to automobile, motorcycle, large-scale engineering machinery, agricultural machinery, the measuring disk thermistor spare of naval vessel equitemperature, its outside need not insulated enclosure, and mechanical strength height, vibration strength are good, stable and reliable for performance.
Wafer-type thermosensitive oxide resistor of the present invention, the thermo-sensitive material that this thermistor is made up of cobalt oxide, manganese oxide, nickel oxide, through ball milling mix, give sintering, ball milling is made powder again, powder is pressed into disk makes; Wherein each set of dispense ratio is: the metallic atom ratio
Cobalt: manganese: nickel=1-5: 5-1: 1-5
The preparation method of wafer-type thermistor follows these steps to carry out:
A, at first with cobalt oxide, manganese oxide, nickel oxide raw material by proportioning through Mechanical Method ball milling, mixing, 1000-1100 ℃ is given sintering, gives after the burning ball milling again and makes powder body material; The making of same powder body material also can be adopted chemical method preparations such as slaine thermal decomposition method or coprecipitation or sol-gel process;
B, the powder body material that makes is added the granulation of 5-15% poly (vinyl alcohol) binder then, the siccative after the granulation is pressed into disk parison body with tablet press machine, sinters porcelain into through high temperature 1100-1400 ℃ again;
C, will be on two planes of the disk behind the sintering apply silver or nickel or aluminium conductor slurry, burning infiltration silver or nickel or aluminium conductor metal level are as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.
Embodiment 1 (metallic atom ratio)
A, at first with cobalt oxide: manganese oxide: 1: 4: 1 raw material of nickel oxide are through Mechanical Method ball milling, mixing, and 1000 ℃ are given sintering, give after the burning ball milling again and make powder body material;
B and then the powder body material that makes added 5% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1150 ℃ through high temperature;
Apply silver conductive paste on c, two planes with the disk behind the sintering, burning infiltration silver conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3100K, 25 ℃ of 90 Ω of resistance value.
Embodiment 2 (metallic atom ratio)
A, at first with cobalt oxide: manganese oxide: 2: 3: 1 raw material of nickel oxide are made powder body material through chemical method slaine thermal decomposition method;
B and then the powder body material that makes added 10% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1250 ℃ through high temperature;
C, with nickel coating conductor paste on two planes of the disk behind the sintering, the heating-up nickel conductor metal layer is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3900K, 25 ℃ of 450 Ω of resistance value.
Embodiment 3 (metallic atom ratio)
A, at first with cobalt oxide: manganese oxide: 3: 1: 2 raw material of nickel oxide are made powder body material through the chemical method coprecipitation;
B and then the powder body material that makes added 15% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1250 ℃ through high temperature;
C, with coated with aluminum conductor paste on two planes of the disk behind the sintering, burning infiltration aluminium conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3300,25 ℃ of 1300 Ω of resistance value.
Embodiment 4 (metallic atom ratio)
A, at first with cobalt oxide: manganese oxide: 4: 1: 1 raw material of nickel oxide are through Mechanical Method ball milling, mixing, and 1050 ℃ are given sintering, give after the burning ball milling again and make powder body material;
B and then the powder body material that makes added 8% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1300 ℃ through high temperature;
Apply silver conductive paste on c, two planes with the disk behind the sintering, burning infiltration silver conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3500K, 25 ℃ of 220 Ω of resistance value.
Embodiment 5 (metallic atom ratio)
A, at first with cobalt oxide: 1: 4: 1 raw material of manganese oxide nickel oxide are made powder body material through the chemical method sol-gel process;
B and then the powder body material that makes added 12% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1300 ℃ through high temperature;
C, with nickel coating conductor paste on two planes of the disk behind the sintering, the heating-up nickel conductor metal layer is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3650K, 25 ℃ of 350 Ω of resistance value.
Claims (2)
1, a kind of wafer-type thermosensitive oxide resistor is characterized in that, the thermo-sensitive material that this thermistor is made up of cobalt oxide, manganese oxide, nickel oxide, through ball milling mix, give sintering, ball milling is made powder again, powder is pressed into disk makes; Wherein each set of dispense ratio is: the metallic atom ratio
Cobalt: manganese: nickel=1-5: 5-1: 1-5
2, the preparation method of wafer-type thermistor according to claim 1 is characterized in that, presses routine step and carries out:
A, at first with cobalt oxide, manganese oxide, nickel oxide raw material by proportioning through Mechanical Method ball milling, mixing, 1000-1100 ℃ is given sintering, gives after the burning ball milling again and makes powder body material; The making of same powder body material also can be adopted chemical method preparations such as slaine thermal decomposition method or coprecipitation or sol-gel process;
B, the powder body material that makes is added the granulation of 5-15% poly (vinyl alcohol) binder then, the siccative after the granulation is pressed into disk parison body with tablet press machine, sinters porcelain into through high temperature 1100-1400 ℃ again;
C, will be on two planes of the disk behind the sintering apply silver or nickel or aluminium conductor slurry, burning infiltration silver or nickel or aluminium conductor metal level are as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133078 CN1305197A (en) | 2000-11-11 | 2000-11-11 | Wafer-type thermosensitive oxide resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133078 CN1305197A (en) | 2000-11-11 | 2000-11-11 | Wafer-type thermosensitive oxide resistor |
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| Publication Number | Publication Date |
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| CN1305197A true CN1305197A (en) | 2001-07-25 |
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| CN 00133078 Pending CN1305197A (en) | 2000-11-11 | 2000-11-11 | Wafer-type thermosensitive oxide resistor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103964820A (en) * | 2014-04-29 | 2014-08-06 | 成都理工大学 | Preparation method of ring-shaped high-reliability negative-temperature coefficient thermistor for automobile |
| CN105788786A (en) * | 2015-01-13 | 2016-07-20 | 株式会社村田制作所 | Method of manufacturing NTC thermistor element |
| CN108117378A (en) * | 2017-12-26 | 2018-06-05 | 珠海爱晟医疗科技有限公司 | Measurement of bldy temperature wide temperature range high-precision NTC heat sensitive chips and preparation method thereof |
| CN108151913A (en) * | 2017-12-27 | 2018-06-12 | 赛特科（唐山）科技有限公司 | A kind of heat-sensitive material of sensor |
| CN109293343A (en) * | 2018-08-24 | 2019-02-01 | 西南科技大学 | Pyromagnetic composite sensing resistance material of negative temperature coefficient and preparation method thereof |
| CN110156478A (en) * | 2019-06-06 | 2019-08-23 | 宁波科联电子有限公司 | A kind of low-temperature sintering oxide temperature-sensitive element, manufacturing device and its manufacturing method |
-
2000
- 2000-11-11 CN CN 00133078 patent/CN1305197A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103964820A (en) * | 2014-04-29 | 2014-08-06 | 成都理工大学 | Preparation method of ring-shaped high-reliability negative-temperature coefficient thermistor for automobile |
| CN105788786A (en) * | 2015-01-13 | 2016-07-20 | 株式会社村田制作所 | Method of manufacturing NTC thermistor element |
| CN108117378A (en) * | 2017-12-26 | 2018-06-05 | 珠海爱晟医疗科技有限公司 | Measurement of bldy temperature wide temperature range high-precision NTC heat sensitive chips and preparation method thereof |
| CN108117378B (en) * | 2017-12-26 | 2021-04-30 | 珠海爱晟医疗科技有限公司 | Wide-temperature-range high-precision NTC (negative temperature coefficient) thermosensitive chip for body temperature measurement and manufacturing method thereof |
| CN108151913A (en) * | 2017-12-27 | 2018-06-12 | 赛特科（唐山）科技有限公司 | A kind of heat-sensitive material of sensor |
| CN109293343A (en) * | 2018-08-24 | 2019-02-01 | 西南科技大学 | Pyromagnetic composite sensing resistance material of negative temperature coefficient and preparation method thereof |
| CN109293343B (en) * | 2018-08-24 | 2021-06-25 | 西南科技大学 | Negative temperature coefficient thermomagnetic composite sensitive resistance material and preparation method thereof |
| CN110156478A (en) * | 2019-06-06 | 2019-08-23 | 宁波科联电子有限公司 | A kind of low-temperature sintering oxide temperature-sensitive element, manufacturing device and its manufacturing method |
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Owner name: INJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMIS Free format text: FORMER OWNER: XINJINAG INST OF PHYSICS, CHINESE ACADEMY OF SCIENCES Effective date: 20031105 |
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Effective date of registration: 20031105 Address after: 830011 No. 40 South Beijing Road, the Xinjiang Uygur Autonomous Region, Urumqi Applicant after: The Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Scie Address before: 830011 No. 40 South Beijing Road, the Xinjiang Uygur Autonomous Region, Urumqi Applicant before: Mitsubishi Jukogyo Kabushiki Kaisha |
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