CN202332579U - Metallic film capacitor - Google Patents
Metallic film capacitor Download PDFInfo
- Publication number
- CN202332579U CN202332579U CN2011202838918U CN201120283891U CN202332579U CN 202332579 U CN202332579 U CN 202332579U CN 2011202838918 U CN2011202838918 U CN 2011202838918U CN 201120283891 U CN201120283891 U CN 201120283891U CN 202332579 U CN202332579 U CN 202332579U
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- metallic film
- electrode
- film
- metal film
- exit
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Abstract
The utility model discloses a metallic film capacitor. The metallic film capacitor comprises an insulating substrate, wherein a metallic film electrode with a lead-out end is arranged on the top of the insulating substrate, a dielectric film is arranged on the surface of the metallic film electrode outside an lead-out end interface, and a metallic film electrode with a lead-out end is arranged on the top of the dielectric film. According to the utility model, two metallic film layers with small thickness are deposited by using a mask process and are utilized as an upper electrode and a lower electrode, thereby greatly reducing the use amount of metal, lowering the production cost and simplifying the fabrication process. The dielectric film has the advantages of small thickness, high mechanical strength and high stability, and is suitable for various complex environments. The metallic film capacitor provided by the utility model can be manufactured through industrial production to realize important practical significance, and has the advantages of low manufacture cost, high physical performance and chemical stability, long service life, lower manufacture cost and high application value.
Description
Technical field
The utility model relates to a kind of electric capacity and reaches especially a kind of metallic film electric capacity.
Background technology
The thin-film capacitor range of capacity is wide, and operating voltage range is extremely wide, good temp characteristic, and stability is high, can realize metallization, has self-healing property, is widely used in a plurality of industries such as electronics, space flight, communication, military affairs.Along with China's digitlization, informationization, networked construction process are constantly accelerated; And the development of very lagre scale integrated circuit (VLSIC); Require electronic component miniaturization, filmization and multifunction, this makes conventional plastic film and silicon dioxide reach certain limit as main capacitor dielectric material.Problems such as present electric capacity exists the dielectric constant of medium low, and heat-resisting poor, film forming is poor, and mechanical strength is low.
Summary of the invention
The purpose of the utility model is: a kind of metallic film electric capacity is provided, and its each item performance is outstanding, with low cost, is easy to industrialization, to overcome the deficiency of prior art.
The utility model is achieved in that metallic film electric capacity; Comprise insulated substrate; Be provided with the metal film electrode
of band exit
at the top of insulated substrate; Be provided with dielectric film on metal film electrode
surface outside exit
interface, be provided with the metal film electrode
of band exit
at the top of dielectric film.
On exit
and exit
surface in addition, all be provided with the passivation protection film, its material is silicon dioxide or silicon nitride.Material requirements as the passivation protection film has good insulation performance and temperature stability.
The thickness of metal film electrode
and metal film electrode
is respectively 0.1～0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.It is very low that these metals and their alloy have resistivity, but high temperature high voltage resistant has high stability, can adapt to characteristics such as various complicated.
The thickness of dielectric film is 0.04～0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.Their dielectric constant is high, good heat resistance, and good film-forming property, mechanical strength is high, and the insulating properties energy consumption of the dielectric film for preparing can prevent capacitance short-circuit, reduces leakage current.
Tantalum pentoxide and aluminium oxide have very high dielectric constant (tantalum pentoxide is 27, and aluminium oxide is 39.9, and plastic film is about 3), fusing point high (tantalum pentoxide is about 1800 ℃), stable chemical performance, corrosion-resistant and Heat stability is good.Be dielectric film capacitor CV density big (be under the same voltage conditions, the capacitance of unit volume is big) with tantalum pentoxide or aluminium oxide etc., (ESR) is little for equivalent series resistance, and leakage current is little.The metal film electrode of deposition has the self-recovery performance, and the reliability of opposing insulation breakdown is higher, can under extraordinary conditions such as high temperature or low temperature, use, and has long-term stability.This thin-film capacitor can be applied in numerous high-tech areas such as electronics, space flight, military affairs.
Owing to adopted above-mentioned technical scheme, compared with prior art, the utility model deposits the less metal film of two layers of thickness as upper/lower electrode through masking process, has greatly reduced metal consumption, has reduced production cost, and manufacture craft is simple.The thickness of dielectric film is little, and mechanical strength is high, has advantages of higher stability, can adapt to various complicated.The utility model can carry out vegetation through the production of industrialization, have important practical significance, and the cost of making is comparatively cheap; And resulting product has better physical performance and chemical stability; Long service life, cost of manufacture is lower, is with a wide range of applications.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is the vertical view of Fig. 1;
Description of reference numerals:
1-metal film electrode
; The 2-dielectric film; 3-metal film electrode
; The 4-insulated substrate; 5-passivation protection film; 6-exit
; 7-exit
.
Embodiment
The embodiment 1 of the utility model: the structure of metallic film electric capacity is as shown in Figure 1, comprises aluminium oxide (Al
2O
3) insulated substrate 4 processed, be provided with the band exit at the top of insulated substrate 4
7 metal film electrode
1, metal film electrode
1 thickness is 0.2 μ m, and material is a tantalum, at exit
The metal film electrode that 6 interfaces are outer
1 surface is provided with the dielectric film 2 that thickness is 0.05 μ m, and its material is a tantalum pentoxide; Be provided with the band exit at the top of dielectric film 2
7 metal film electrode
3, metal film electrode
3 thickness is 0.2 μ m, and material is a niobium; At exit
6 and exit
All being provided with the silicon nitride on the surface beyond 7 is the passivation protection film 5 of material.
The preparation method of metallic film electric capacity is at the aluminium oxide (Al of cleaning
2O
3) lay one deck mask on the insulated substrate, adopt magnetron sputtering method, be material with the tantalum, deposit the thick metal film electrode of more than one 0.20 μ m
, obtain semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.05 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; On the semi-finished product B that handled, laying mask, adopt magnetron sputtering method, is material with the niobium, and depositing thickness is 0.20 μ m metal film electrode
, and at metal film electrode
,
On reserve exit respectively
And exit
, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Adopt magnetron sputtering method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
The utility model Example 2: Metal film capacitors, including aluminum nitride insulating substrate 4, the top of the insulating substrate 4 has a leading end with
6 metal film electrodes
1, the metal film electrodes
1 has a thickness of 0.1μm , material is aluminum, the terminals
6 interfaces of the metal film electrodes
1 has a thickness of 0.04μm on the surface of the dielectric film 2, the material is tantalum pentoxide; the top of the dielectric film 2 has a leading end with
7 of metal film electrodes
3, the metal film electrodes
3 has a thickness of 0.1μm, material for the silver; at terminals
6 and terminations
7 outside surface has a silica-based material passivation film 9.
The preparation method of metallic film electric capacity; On the aluminium nitride insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With aluminium is material, deposits the thick metal film electrode of more than one 0.10 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.04 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering method; With silver is material; Depositing thickness is 0.10 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Adopt the PECVD method; On the semi-finished product C surface beyond the exit, deposit silicon dioxide passivation protection film; After the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor, and to the exit metal spraying; Through the wave-soldering extraction electrode, packing obtains finished product after handling again on gilding layer.
The utility model Example 3: metal film capacitors, including a ceramic substrate made of an insulating substrate 4, the top of the insulating substrate 4 has a leading end with
7 metal film electrodes
1, the metal film electrodes
1 has a thickness of 0.3μm , the material is copper alloy, at terminals
6 interfaces of the metal film electrodes
1 on the surface of a dielectric film thickness of 0.06μm 2, the material is alumina; dielectric film 2 in the top of a bathroom with terminals
7 of metal film electrodes
3, the metal film electrodes
3 has a thickness of 0.3μm, material is copper niobium alloys; at terminals
6 and terminations
7 on a surface other than have a silicon nitride passivation film as the material 5.
The preparation method of metallic film electric capacity; On the ceramic substrate insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With the albronze is material, deposits the thick metal film electrode of more than one 0.30 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the aluminium oxide, and depositing thickness is the matter film of 0.06 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering; With the copper niobium alloy is material; Depositing thickness is 0.30 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Adopt the PECVD method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Claims (4)
1. metallic film electric capacity; Comprise insulated substrate (4); It is characterized in that: the metal film electrode I (1) that is provided with band exit I (6) at the top of insulated substrate (4); Be provided with dielectric film (2) on metal film electrode I (1) surface outside exit I (6) interface, be provided with the metal film electrode II (3) of band exit II (7) at the top of dielectric film (2).
2. metallic film electric capacity according to claim 1 is characterized in that: on exit I (6) and exit II (7) surface in addition, all be provided with passivation protection film (5).
3. metallic film electric capacity according to claim 1 is characterized in that: the thickness of metal film electrode I (1) and metal film electrode II (3) is respectively 0.1～0.3 μ m.
4. metallic film electric capacity according to claim 1 is characterized in that: the thickness of dielectric film (2) is 0.04～0.06 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202838918U CN202332579U (en) | 2011-08-05 | 2011-08-05 | Metallic film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202838918U CN202332579U (en) | 2011-08-05 | 2011-08-05 | Metallic film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202332579U true CN202332579U (en) | 2012-07-11 |
Family
ID=46444551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202838918U Expired - Fee Related CN202332579U (en) | 2011-08-05 | 2011-08-05 | Metallic film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202332579U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385985A (en) * | 2011-08-05 | 2012-03-21 | 贵州大学 | Metal thin film capacitor and preparation method thereof |
| CN102394177A (en) * | 2011-11-29 | 2012-03-28 | 贵州大学 | Laminated metallic film capacitor and preparing method thereof |
-
2011
- 2011-08-05 CN CN2011202838918U patent/CN202332579U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385985A (en) * | 2011-08-05 | 2012-03-21 | 贵州大学 | Metal thin film capacitor and preparation method thereof |
| CN102394177A (en) * | 2011-11-29 | 2012-03-28 | 贵州大学 | Laminated metallic film capacitor and preparing method thereof |
| CN102394177B (en) * | 2011-11-29 | 2013-07-03 | 贵州大学 | Laminated metallic film capacitor and preparing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20150805 |
|
| EXPY | Termination of patent right or utility model |