CN1305196A - Wafer-type thermosensitive oxide resistor - Google Patents
Wafer-type thermosensitive oxide resistor Download PDFInfo
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- CN1305196A CN1305196A CN 00133024 CN00133024A CN1305196A CN 1305196 A CN1305196 A CN 1305196A CN 00133024 CN00133024 CN 00133024 CN 00133024 A CN00133024 A CN 00133024A CN 1305196 A CN1305196 A CN 1305196A
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Abstract
A wafer-type thermosensitive oxide resistor is prepared from cobalt oxide and manganese oxide through powder producing mechanical process including mixing by ball grinding, pre-sintering and pulverizing by ball grinding, or one of the chemical process of pyroanalyzing, co-deposition, and sol-gel process, and die pressing process. Its advantages are no need of external insulating seal, and high mechanical strength, shock resistance and stability.
Description
The present invention relates to a kind of wafer-type thermosensitive oxide resistor
NTC (negative temperature coefficient) thermistor great majority are to be made by transition metal oxide.Manganese, cobalt, nickel be NTC (negative temperature coefficient) oxide thermosensitive resistor with its resistance, B value wider range, advantages such as sensitivity height are widely used in fields such as temperature detection and control, temperature-compensating, surge current inhibition.The present invention develops a kind of wafer-type thermosensitive oxide resistor material according to market conditions again simultaneously according to the advantage of NTC (negative temperature coefficient) oxide thermosensitive resistor.This thermistor is applicable to automobile, motorcycle, large-scale engineering machinery, agricultural machinery, the measurement of naval vessel equitemperature.
The object of the invention is, the thermo-sensitive material that the wafer-type thermosensitive oxide resistor of development is made up of cobalt oxide, manganese oxide, mix, give sintering, ball milling or chemical method again through ball milling: slaine thermal decomposition method, coprecipitation, sol-gel process are made powder body material, powder is pressed into disk makes; Be applicable to automobile, motorcycle, large-scale engineering machinery, agricultural machinery, the measuring disk thermistor spare of naval vessel equitemperature, its outside need not insulated enclosure, and mechanical strength height, vibration strength are good, stable and reliable for performance.
Wafer-type thermosensitive oxide resistor of the present invention, the thermo-sensitive material that this thermistor is made up of cobalt oxide, manganese oxide, through the Mechanical Method ball milling, mix, give sintering, ball milling or chemical method slaine thermal decomposition method, coprecipitation, sol-gel process are made powder again, powder is pressed into disk makes; Wherein each set of dispense ratio is: the metallic atom ratio
Cobalt: manganese=1-9: 9-1
The preparation method of wafer-type thermistor follows these steps to carry out:
A, at first cobalt oxide, manganese oxide raw material are mixed through ball milling by proportioning, 1000-1100 ℃ is given sintering, and give after the burning ball milling again and make powder body material or chemical method: slaine thermal decomposition method, coprecipitation, sol-gel process are made powder,
B and then the powder body material that makes added the granulation of 5-15% poly (vinyl alcohol) binder, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into through high temperature 1100-1400 ℃;
C, will be on two planes of the disk behind the sintering apply silver or nickel or aluminium conductor slurry, burning infiltration silver or nickel or aluminium conductor metal level are as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.
Embodiment 1 (metallic atom ratio)
A, at first with cobalt oxide: 1: 9 raw material of manganese oxide mix through the Mechanical Method ball milling, and 1000 ℃ are given sintering, give after the burning ball milling again and make powder body material;
B and then the powder body material that makes added 5% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1150 ℃ through high temperature;
Apply silver conductive paste on c, two planes with the disk behind the sintering, burning infiltration silver conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3300K, 25 ℃ of 100 Ω of resistance value.
Embodiment 2 (metallic atom ratio)
A, at first with cobalt oxide: 6: 4 raw material of manganese oxide are made powder body material through chemical method slaine thermal decomposition method;
B and then the powder body material that makes added 8% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1200 ℃ through high temperature;
C, with nickel coating conductor paste on two planes of the disk behind the sintering, the heating-up nickel conductor metal layer is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 3600K, 25 ℃ of 210 Ω of resistance value.
Embodiment 3 (metallic atom ratio)
A, at first with cobalt oxide: 5: 5 raw material of manganese oxide are through chemical method: coprecipitation is made powder body material;
B and then the powder body material that makes added 10% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1300 ℃ through high temperature;
C, with coated with aluminum conductor paste on two planes of the disk behind the sintering, burning infiltration aluminium conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 4200K, 25 ℃ of 400 Ω of resistance value.
Embodiment 4 (metallic atom ratio)
A, at first with cobalt oxide: 9: 1 raw material of manganese oxide mix through ball milling, and 1050 ℃ are given sintering, give after the burning ball milling again and make powder body material;
B and then the powder body material that makes added 12% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1250 ℃ through high temperature;
Apply silver conductive paste on c, two planes with the disk behind the sintering, burning infiltration silver conductor metal level is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 4500K, 25 ℃ of 1200 Ω of resistance value.
Embodiment 5 (metallic atom ratio)
A, at first with cobalt oxide: 8: 2 raw material of manganese oxide are through chemical method: sol-gel process is made powder body material;
B and then the powder body material that makes added 15% poly (vinyl alcohol) binder granulation, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into for 1250 ℃ through high temperature;
C, with nickel coating conductor paste on two planes of the disk behind the sintering, the heating-up nickel conductor metal layer is as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.Its B value is 5000K, 25 ℃ of 1100 Ω of resistance value.
Claims (2)
1, a kind of wafer-type thermosensitive oxide resistor, it is characterized in that, the thermo-sensitive material that this thermistor is made up of cobalt oxide, manganese oxide, through the Mechanical Method ball milling mix, give sintering, ball milling or chemical method slaine thermal decomposition method, coprecipitation, sol-gel process are made powder again, powder is pressed into disk makes; Wherein each set of dispense ratio is: the metallic atom ratio
Cobalt: manganese=1-9: 9-1
2, the preparation method of wafer-type thermistor according to claim 1 is characterized in that, presses routine step and carries out:
A, at first cobalt oxide, manganese oxide raw material are mixed through the Mechanical Method ball milling by proportioning, 1000-1100 ℃ is given sintering, and give after the burning ball milling or chemical method again: slaine thermal decomposition method, coprecipitation, sol-gel process are made powder body material;
B and then the powder body material that makes added the granulation of 5-15% poly (vinyl alcohol) binder, the siccative after the granulation is pressed into disk parison body with tablet press machine, is sintering porcelain into through high temperature 1100-1400 ℃;
C, will be on two planes of the disk behind the sintering apply silver or nickel or aluminium conductor slurry, burning infiltration silver or nickel or aluminium conductor metal level are as two electrodes; The making of electrode layer also can plate conductor metal layer on two planes of disk with the method for chemical plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133024 CN1305196A (en) | 2000-11-15 | 2000-11-15 | Wafer-type thermosensitive oxide resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00133024 CN1305196A (en) | 2000-11-15 | 2000-11-15 | Wafer-type thermosensitive oxide resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1305196A true CN1305196A (en) | 2001-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 00133024 Pending CN1305196A (en) | 2000-11-15 | 2000-11-15 | Wafer-type thermosensitive oxide resistor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108917973A (en) * | 2018-08-06 | 2018-11-30 | 深圳大图科创技术开发有限公司 | A kind of ultrathin type temperature sensor |
| CN108981820A (en) * | 2018-08-06 | 2018-12-11 | 深圳明创自控技术有限公司 | A kind of novel household environmental detection set |
| CN108999774A (en) * | 2018-08-06 | 2018-12-14 | 深圳源广安智能科技有限公司 | A kind of natural gas compressor remote diagnosis system |
| CN109041929A (en) * | 2018-08-06 | 2018-12-21 | 梧州市兴能农业科技有限公司 | A kind of nursery box |
| CN109085781A (en) * | 2018-08-06 | 2018-12-25 | 深圳汇创联合自动化控制有限公司 | A kind of home environment detection device |
| CN109113557A (en) * | 2018-08-06 | 2019-01-01 | 深圳市晟达机械设计有限公司 | A kind of solar automatic curtain |
-
2000
- 2000-11-15 CN CN 00133024 patent/CN1305196A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108917973A (en) * | 2018-08-06 | 2018-11-30 | 深圳大图科创技术开发有限公司 | A kind of ultrathin type temperature sensor |
| CN108981820A (en) * | 2018-08-06 | 2018-12-11 | 深圳明创自控技术有限公司 | A kind of novel household environmental detection set |
| CN108999774A (en) * | 2018-08-06 | 2018-12-14 | 深圳源广安智能科技有限公司 | A kind of natural gas compressor remote diagnosis system |
| CN109041929A (en) * | 2018-08-06 | 2018-12-21 | 梧州市兴能农业科技有限公司 | A kind of nursery box |
| CN109085781A (en) * | 2018-08-06 | 2018-12-25 | 深圳汇创联合自动化控制有限公司 | A kind of home environment detection device |
| CN109113557A (en) * | 2018-08-06 | 2019-01-01 | 深圳市晟达机械设计有限公司 | A kind of solar automatic curtain |
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