CN1257306A - 使用快速热处理的预退火/氧化联合步骤 - Google Patents
使用快速热处理的预退火/氧化联合步骤 Download PDFInfo
- Publication number
- CN1257306A CN1257306A CN99118495A CN99118495A CN1257306A CN 1257306 A CN1257306 A CN 1257306A CN 99118495 A CN99118495 A CN 99118495A CN 99118495 A CN99118495 A CN 99118495A CN 1257306 A CN1257306 A CN 1257306A
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- Prior art keywords
- oxygen
- silicon chip
- depth
- seconds
- thermal oxide
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Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 16
- 230000003647 oxidation Effects 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 title description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000007669 thermal treatment Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/146870 | 1998-09-03 | ||
US09/146,870 US6436846B1 (en) | 1998-09-03 | 1998-09-03 | Combined preanneal/oxidation step using rapid thermal processing |
US09/146,870 | 1998-09-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1257306A true CN1257306A (zh) | 2000-06-21 |
CN1151546C CN1151546C (zh) | 2004-05-26 |
Family
ID=22519341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991184955A Expired - Fee Related CN1151546C (zh) | 1998-09-03 | 1999-09-03 | 使用快速热处理的预退火/氧化联合步骤 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6436846B1 (zh) |
EP (1) | EP0984486A3 (zh) |
JP (1) | JP2000091259A (zh) |
KR (1) | KR100630516B1 (zh) |
CN (1) | CN1151546C (zh) |
TW (1) | TW540120B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101187058A (zh) * | 2006-09-20 | 2008-05-28 | 硅电子股份公司 | 硅半导体晶片及其制造方法 |
US7767549B2 (en) | 2006-12-26 | 2010-08-03 | Sumco Corporation | Method of manufacturing bonded wafer |
CN101187059B (zh) * | 2006-10-04 | 2011-04-27 | 硅电子股份公司 | 具有良好的内在吸收能力的硅晶片及其制造方法 |
CN108660513A (zh) * | 2017-03-28 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种减少晶片缺陷的设备及方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100372097B1 (ko) * | 2000-12-26 | 2003-02-14 | 주식회사 실트론 | 웨이퍼의 열처리 방법 |
US7101812B2 (en) * | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US7321722B2 (en) * | 2005-06-13 | 2008-01-22 | United Microelectronics Corp. | Method for thermal processing a semiconductor wafer |
EP1835533B1 (en) * | 2006-03-14 | 2020-06-03 | Soitec | Method for manufacturing compound material wafers and method for recycling a used donor substrate |
JP5515406B2 (ja) * | 2009-05-15 | 2014-06-11 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
WO2010140323A1 (ja) | 2009-06-03 | 2010-12-09 | コバレントマテリアル株式会社 | シリコンウェーハ及びシリコンウェーハの熱処理方法 |
CN102168314B (zh) * | 2011-03-23 | 2012-05-30 | 浙江大学 | 直拉硅片的内吸杂工艺 |
US8492290B2 (en) * | 2011-06-21 | 2013-07-23 | International Business Machines Corporation | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness |
JP6716344B2 (ja) | 2016-06-01 | 2020-07-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
DE102017219255A1 (de) * | 2017-10-26 | 2019-05-02 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium |
US20220298620A1 (en) * | 2021-03-22 | 2022-09-22 | Applied Materias, Inc. | Enhanced oxidation with hydrogen radical pretreatment |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583375B2 (ja) * | 1979-01-19 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶ウエハ−の製造方法 |
EP0214421A1 (de) * | 1985-08-09 | 1987-03-18 | Siemens Aktiengesellschaft | Verfahren zum Herstellen von Dünnoxidschichten auf durch Tiegelziehen hergestellten Siliziumsubstraten |
US5242854A (en) * | 1990-04-02 | 1993-09-07 | National Semiconductor Corporation | High performance semiconductor devices and their manufacture |
JPH0684925A (ja) * | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
US5360769A (en) * | 1992-12-17 | 1994-11-01 | Micron Semiconductor, Inc. | Method for fabricating hybrid oxides for thinner gate devices |
US5401669A (en) * | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
JP2874834B2 (ja) * | 1994-07-29 | 1999-03-24 | 三菱マテリアル株式会社 | シリコンウェーハのイントリンシックゲッタリング処理法 |
US6100149A (en) * | 1997-07-01 | 2000-08-08 | Steag Rtp Systems | Method for rapid thermal processing (RTP) of silicon substrates |
WO2000013226A1 (en) * | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
-
1998
- 1998-09-03 US US09/146,870 patent/US6436846B1/en not_active Expired - Lifetime
-
1999
- 1999-08-12 EP EP99115879A patent/EP0984486A3/en not_active Ceased
- 1999-08-31 KR KR1019990036463A patent/KR100630516B1/ko not_active IP Right Cessation
- 1999-09-01 JP JP11247605A patent/JP2000091259A/ja not_active Withdrawn
- 1999-09-03 CN CNB991184955A patent/CN1151546C/zh not_active Expired - Fee Related
- 1999-12-21 TW TW088115038A patent/TW540120B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101187058A (zh) * | 2006-09-20 | 2008-05-28 | 硅电子股份公司 | 硅半导体晶片及其制造方法 |
CN101187058B (zh) * | 2006-09-20 | 2011-01-19 | 硅电子股份公司 | 硅半导体晶片及其制造方法 |
CN101187059B (zh) * | 2006-10-04 | 2011-04-27 | 硅电子股份公司 | 具有良好的内在吸收能力的硅晶片及其制造方法 |
US7767549B2 (en) | 2006-12-26 | 2010-08-03 | Sumco Corporation | Method of manufacturing bonded wafer |
CN101241835B (zh) * | 2006-12-26 | 2011-03-30 | 胜高股份有限公司 | 贴合晶片的制造方法 |
CN108660513A (zh) * | 2017-03-28 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种减少晶片缺陷的设备及方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0984486A3 (en) | 2000-04-19 |
KR100630516B1 (ko) | 2006-09-29 |
CN1151546C (zh) | 2004-05-26 |
TW540120B (en) | 2003-07-01 |
US6436846B1 (en) | 2002-08-20 |
EP0984486A2 (en) | 2000-03-08 |
JP2000091259A (ja) | 2000-03-31 |
KR20000022803A (ko) | 2000-04-25 |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130226 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130226 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130226 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151228 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040526 Termination date: 20170903 |
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CF01 | Termination of patent right due to non-payment of annual fee |