CN1248289C - 感应耦合式等离子体装置 - Google Patents

感应耦合式等离子体装置 Download PDF

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CN1248289C
CN1248289C CNB021273243A CN02127324A CN1248289C CN 1248289 C CN1248289 C CN 1248289C CN B021273243 A CNB021273243 A CN B021273243A CN 02127324 A CN02127324 A CN 02127324A CN 1248289 C CN1248289 C CN 1248289C
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CN1426090A (zh
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尤里·N·托尔马切夫
马东俊
文昌郁
尹惠荣
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Samsung Electronics Co Ltd
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract

提供一种感应耦合式等离子体装置，此感应耦合式等离子体装置包括一处理腔室、一顶部等离子体源腔室、一反应器、一感应器、一开孔和一挡板。处理腔室具有一晶片基座，上面装设一基底。顶部等离子体源腔室装设在处理腔室。反应器装设在顶部等离子体源腔室之中；具有一通道，一种气体流经此通道；以及把等离子体各反应产物供给处理腔室。感应器装设在顶部等离子体源腔室与反应器之间并缠绕反应器。开孔设置在其中装设感应器的、反应器周边空间与处理腔室之间。挡板可开启和关闭开孔。因而，可以改进发自一等离子体源的各种自由基的均匀径向分布。

Description

感应耦合式等离子体装置
技术领域
本发明涉及一种感应耦合式等离子体装置(inductively coupledplasma system)，用于化学气相沉积(CVD)之中。
背景技术
半导体工件的等离子体处理具有的优点是，处理温度低和有效性高。比如SiO2的沉积可以采用O2等离子体源和SiH4气体以大约100-500nm/min的沉积速率在低于200℃的温度下进行。不过，为了以涂层的高均匀性在大面积(高达300mm直径的晶片)上进行沉积，等离子体源必须具有很高的生产能力并以均匀的通量形成等离子体。这些要求可由几种在本技术领域中可供使用的高密度等离子体源(HDP)予以满足。
虽然在历史上HDP的研制始自电子回旋共振(ECR)等离子体，但大多数近来的应用基于射频(RF)激发的感应耦合式等离子体(ICP)。各种ICP源在设计上很简单，具有一很宽的功率和压力窗口，以及不需要各辅助磁铁用于其运作。一种平的螺卷线圈感应器已经提高了其很高的沉积和蚀刻效率(参见比如美国专利第6184158号)。遗憾的是，存在一些这类ICP源固有的缺点。从一线圈的到一处理腔室的RF功率必须通过一一般由石英制成的介电窗口予以馈给。此窗口的厚度必须大到足以承受大气压力-若干cm。对于大型设备，窗口的厚度必须更大。介电窗口的真空一侧会遭受由于线圈上的高压和很大程度上的电容耦合所造成的溅蚀。
一螺旋共振器是一类ICP源，在一螺旋感应线圈的共振条件下工作(美国专利第5965034号)。共振是通过把一感应导线的长度L调节到一激发放电、关联于一RF电磁场的波长λ而获得的。共振条件：L＝(λ/4)*m，其中m是一整数。不同的m值对应于感应器中不同的驻波模态。线圈的各端可以接地或浮置，这样确定了电流和电压波形的不同边界条件。RF分接位置通常是中间的，在线圈各端之间。通过改变各边界条件和感应线长度，这种等离子体源可以平衡各种寄生电容耦合效应。[G.K.Vinogradov.“Transmission line balanced inductive plasma sources”。PlasmaSources Sci.Technol.9(2000)400-412]。这种等离子体源具有一圆筒几何形状并必须具有一介电封头-等离子体-盛放容器。这通常是一圆筒形石英管(反应器)，同时构成一等离子体源真空腔室的侧壁。
感应线圈的平衡使相对于一接地表面的等离子体电势和因而一反应器材料的溅蚀达到最小。这类感应线圈显示出很高的有效性和用于在1Torr或更高压力下从事干式蚀刻的径向均匀性。不过，当压力低于10mTorr时，带有圆筒几何形状的HDP可能会由于导致在一轴向区域内中性物质耗尽的离子泵作用而失去气体流动的径向均匀性。这一效应在低压和高等离子体密度，亦即高浓度带电粒子下，是比较显著的。中性均匀性方面各种最为重大的变化可能出现在大区域等离子体源之中[G.R.Tynan.“Neutraldepletion and transport mechanisms in large-area high density plasmasources”J.Appl.Phy s.86(1999)4356]。
在ICP源的大多数应用中，一感应器是在一真空腔室的外部。感应器设置在腔室的外部具有某些缺点：
1.它需要一些巨大、复杂的介质真空容器用于一螺旋形感应器，或者在一扁平螺卷感应器的情况下需要一些大面积介电孔口。
2.一种外部的感应器不相容于超高压(UHV)设计。
3.腔室导电部分对于一晶片基座的比例太小了，虽然希望具有比接地部分表面面积小得多的基座表面面积以取得控制一基底上的负偏压而不施用高RF能量的机会。
4.难以按比例扩大此***。
HDP源可以用于自由基加速式顺序(RAS)CVD过程(美国专利第6200893号)。RAS CVD的概念类似于原子层沉积(ALD)，其中两种母体以时间分段方式供给基底。这与ALD不同之处在于，各母体之一是自由基但非稳定的化合物。此方法保证了具有完善厚度均匀性单层可控沉积。不过，如果各母体之一，亦即稳定的化合物，具有低粘附概率，则这种处理是不很有效的。
发明内容
为了解决上述各种问题，本发明的目的是提供一种高密度等离子体装置，能够消除感应器的溅蚀并防止各气体产物回流而接近感应器。
本发明的另一目的是提供一种高密度等离子体装置，可以形成源自一等离子体源的自由基的一种均匀的径向分布。
因此，为了达到以上各目的，按照本发明，提供一种感应耦合式等离子体装置，包括一处理腔室、一顶部等离子体源腔室、一反应器、一感应器、一开孔和一挡板。处理腔室具有一晶片基座，上面装设一基底。顶部等离子体源腔室装设在处理腔室上。反应器装设在顶部等离子体源腔室之中，具有某一气体流经的通道，以及把等离子体反应产物供给处理腔室。感应器装设在顶部等离子体源腔室与反应器之间并缠绕反应器。开孔设置在感应器装设其中的、反应器的周边空间与处理腔室之间。挡板可开启和关闭开孔。
反应器包括一内部圆筒、一外部圆筒和一环形通道。外部圆筒围绕内部圆筒。环形通道设置在内筒与外筒之间。最好是，环形通道的顶部连接于顶部等离子体源腔室外侧的一气体总汇。
按照本发明的一项实施例，内部圆筒的底部变窄，以致内筒与外筒之间的环形通道的底部变成一圆形。一种气体分配板，具有许多孔眼，装设在环形通道上方。更为详细地说，多个气体分配板在环形通道上方彼此间隔开来。
晶片基座以电气方式浮置在处理腔室之中。具体地说，晶片基座由一陶瓷真空断路器支承在处理腔室之中。
最好是，一种吹除惰性气体供给顶部等离子体源腔室之中、其中装设感应器的感应器周边空间。另外，最好是，感应线圈的长度等于一高频电磁场的1/4波长。最好是，高频能量(high frequency power)供给感应线圈两端之间的感应线圈的个圈之一，而感应线圈的两端都是接地的或浮置的。最好是，高和低频电磁场周期性地或按照某一给定顺序接通和断开。
最好是，一DC电压的双极脉冲施加于基底。最好是，电磁场的脉冲与气源的脉冲同步，而各种气体按顺序供给，从而实现一种改进的自由基加速式顺序沉积过程。
附图说明
本发明的以上各项目的和优点通过参照所附各图详细说明其各实施例将变得更加明显，各图中：
图1是本发明的一种感应耦合式等离子体(ICP)装置的一优选实施例的剖面侧视图；
图2A是示于图1之中的ICP装置中一顶部等离子体源腔室的示意图；
图2B是示于图1之中的ICP装置中一顶部等离子体源腔室的剖面视图；
图3是装设在示于图1之中的ICP装置中顶部等离子体源腔室顶部处的一气体分配板的平面视图；
图4是符合本发明的一种自由基加速式顺序(RAS)沉积过程的流程图。
具体实施方式
图1表示本发明的一种感应耦合式等离子体(ICP)装置的一优选实施例的剖面侧视图。此ICP装置包括一顶部等离子体源腔室1和一处理腔室2
一等离子体源设置在顶部等离子体源腔室1内部。此等离子体源包括一螺旋感应线圈4和一等离子体反应器3。等离子体反应器3借助于一螺帽和一波纹管12连接于用于供应O2、N2、Ar以及类似气体的一气体管线20。等离子体反应器3中激发等离子体的RF能量经由一RF电缆11和一RF馈入装置(feed through)(未画出)被馈送给感应线圈4的各圈之一。感应线圈4的两端都是接地的。感应线圈4的整个长度等于一RF电磁场的全波长(full wavelength)。在这些条件下，电压和电流的驻波形成在感应线圈4之中。最好是，感应线圈4应当具有共振长度，由于对于大型***来说，难以使感应线(inductor wire)短到足以消除沿着感应线圈4的电流和电压偏差。因此，较好的是将其调准于共振。
等离子体源的用途是，在选自O2、N2、C2F6、Ar、He等的气体或气体混合物通过等离子体反应器3时生成一自由基束(flux of radicals)。
等离子体反应器3的底端是敞开的，因而形成等离子体产物与处理腔室2的一种液流连通。另一试剂，按照一远距离等离子体原理(remoteplasma principle)，直接供应给处理腔室2而不经受在等离子体中分解(decomposition in plasma)。这种反应剂，比如SiH4，与惰性气体混合，通过具有许多孔眼的一气体喷射环5予以供给。气体喷射环5形成气流的一种方位均匀分布并防止各种反应产物回流到气体管线20里去。
一基底安放在一晶片基座上，后者包括一加热板6、一波纹管7和一陶瓷真空断路器(ceramic vacuum break)8。加热板6做成是可动的，使得可以调节基底与气体喷射环5之间的距离，以获得更好的涂层径向均匀性。
陶瓷真空断路器8使晶片基座与处理腔室2绝缘，以致基底具有浮动电位。各种反应产物通过一排出孔口10予以排空。等离子体反应器3具有一环形内部通道33，示于图2B之中。等离子体反应器3由具有不同直径的两个介电圆筒31和32构成。其中之一的内筒31自底部关闭而自顶部打开。相反，外筒32自底部打开而自顶部关闭。结果，形成了用于激发和输送等离子体14的环形内部通道33。底下部分中环形内部通道33的截面逐渐从环形变为圆形。内筒31的一底部周边18起到一折流板的作用，改变了等离子体源轴向部分中带电和中性粒子(charged and neutral particles)的流动。这种反应器的设计：
1)使有效等离子体容积最小，从而增大了比能量吸收(specific powerdeposition)；
2)使各种反应产物回流到等离子体里面最少；
3)提高了中性物质速度(neutral species velocities)的均匀性；以及
4)使离子泵作用(ion pumping)所造成的中性耗尽效应(neutraldepletion effect)最小，从而形成等离子体源出口处中性物质的径向均匀性。
如图1、2A和2B之中所示，一反应器3周边与一等离子体源腔室15的壁之间的空间用于装设感应线圈4。在低压下，在此空间中有可能引起放电并可能出现感应线圈4的溅蚀。不过，在许多情况下希望具有低至1-10mTorr的处理压力。这一溅蚀问题通过采用示于图1和2A之中的挡板9而予以解决。挡板9设置在等离子体源腔室1与处理腔室2之间，以便开启(示于图1之中)或关闭(示于图2A之中)的开孔19。当挡板9打开时，等离子体源腔室1与等离子体反应器3之间的等离子体源的整个容积全被排空。当一种惰性气流通过等离子体反应器3与等离子体源腔室1的壁之间的间隙时，则关闭的挡板9将造成压力，高到足以消除感应线圈4的溅蚀，而等离子体反应器3中的压力与处理腔室2之中的相同。挡板9还防止各种反应产物回流到感应线圈4附近。
等离子体源腔室1之中等离子体源中气流的方位均匀性借助于两块气体分配板13来形成。各气体分配板13在等离子体反应器3环形内部通道33的上方彼此间隔开来，其示意结构示于图3之中。此图表明一环形平板13，带有许多对称分布的孔眼17。各气体分配板13连同挡板9一起形成一种压力分布，可防止各种反应产物回流到等离子体源和气体管线20里面。
参照图2，压力关系是P＜P2＜P1＜P3，其中P是处理压力而P3是感应区域中的压力。由于本实施例中晶片基座是浮置的，所以它可以连接于一辅助电源。这一辅助电源必须提供一低频电压或一电压的双极直流(DC)脉冲以实现晶片附近气体的受控激发和离子化。在大多数情况下，这样就大大地简化了淀积工艺过程，在通常的远距离等离子体CVD中，这些过程太慢了。通过使两种电源发生脉动：大功率电力(high power)-施用于高密度等离子体源，以及低功率电力(low power)-施用于晶片基座，就可以实现自由基加速式顺序沉积(radical-assisted sequential deposition)。为此，大功率电力的脉冲与一种试剂源(比如O2)的脉冲同步，而低功率电力脉冲与另一试剂(比如SiH4)的脉冲同步。
这种改进的自由基加速式淀积工艺过程的简图示于图4之中。它不同于先前技术中现有方法之处在于，通过施加于晶片基座的电压脉冲来激发分子母体。
一如上述，实际的等离子体容积被减至最小，而因此比能量吸收增大了。另外，各种反应产物的回流到等离子体里面被减至最小，而各中性物质速度的均匀性提高了。其次，由离子泵作用造成的中性耗尽效应被减至最小，而因此在等离子体源出口处形成了中性物质的径向均匀性。
虽然本发明已经参照一具体实施例予以说明，但是，对于本技术领域中的一般熟练人员来说，显然的是，可以作出已说明的实施例的多种修改而不偏离由所附各项权利要求确定的本发明的精神和范畴。本发明中所述的各项内容的披露和出版只是一种示范而不得解释为由所附各项权利要求确定的本发明的范畴受到限制。

Claims (13)

1.一种感应耦合式等离子体装置，包括：
一处理腔室，具有一其上装设一基底的晶片基座；
一顶部等离子体源腔室，装设在处理腔室上；
一装设在顶部等离子体源腔室之中的反应器，具有一气体由之流过的通道，并把等离子体反应产物供给处理腔室；
一感应线圈，装设在顶部等离子体源腔室与反应器之间并缠绕于反应器；
一开孔，设置在其中装设感应线圈的反应器***空间与处理腔室之间
以及
一开启和关闭所述开孔的挡板。
2.按照权利要求1所述的感应耦合式等离子体装置，其中反应器包括：
一内部圆筒；
一围绕内部圆筒的外部圆筒；以及
一环形通道，设置在内筒与外筒之间，
其中环形通道的顶部连接于顶部等离子体源腔室外面的一气体管线。
3.按照权利要求2所述的感应耦合式等离子体装置，其中内部圆筒的底面变窄，使得内部圆筒与外部圆筒之间的环形通道的底部变成为一圆形
4.按照权利要求2或3所述的感应耦合式等离子体装置，其中在环形通道的上方装设有具有许多孔眼的气体分配板。
5.按照权利要求4所述的感应耦合式等离子体装置，其中在环形通道上方设置有多个彼此间隔开来的气体分配板。
6.按照权利要求1或2所述的感应耦合式等离子体装置，其中晶片基座以电气方式浮置在处理腔室之中。
7.按照权利要求6所述的感应耦合式等离子体装置，其中晶片基座在处理腔室中由一陶瓷真空断路器支承。
8.按照权利要求1所述的感应耦合式等离子体装置，其中一吹扫用的惰性气体被供入顶部等离子体源腔室中的、感应线圈装设在其中的反应器***空间。
9.按照权利要求1所述的感应耦合式等离子体装置，其中高频能量供给感应线圈两端之间的感应线圈各圈之一，而感应线圈的两端是接地的或浮置的。
10.按照权利要求1所述的感应耦合式等离子体装置，其中高和低频电磁场周期性地或按照一给定顺序接通和断开。
11.按照权利要求1所述的感应耦合式等离子体装置，其中一DC电压的各双极脉冲施加于基底。
12.按照权利要求10所述的感应耦合式等离子体装置，其中电磁场的脉冲与气源的脉冲同步而气体被顺序供给，从而实施一种改进的自由基加速式顺序沉积过程。
13.按照权利要求11所述的感应耦合式等离子体装置，其中电磁场的脉冲与气源的脉冲同步而气体被顺序供给，从而实施一种改进的自由基加速式顺序沉积过程。
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CN1426090A (zh) 2003-06-25
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US20030111963A1 (en) 2003-06-19
JP2003249493A (ja) 2003-09-05
US6835919B2 (en) 2004-12-28

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