CN1240255C - 电源模块和其制造方法 - Google Patents
电源模块和其制造方法 Download PDFInfo
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- CN1240255C CN1240255C CNB021606293A CN02160629A CN1240255C CN 1240255 C CN1240255 C CN 1240255C CN B021606293 A CNB021606293 A CN B021606293A CN 02160629 A CN02160629 A CN 02160629A CN 1240255 C CN1240255 C CN 1240255C
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- power module
- circuit carrier
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- module
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Abstract
本发明涉及一种电源模块和一种生产这种模块的方法,该电源模块(1)具有电路载体(3),电路载体上侧(5)具有结构金属层(6),上面装配有功率元件(7)。功率元件被带状导线(8)激励(drive),其内部带状导线端部(9)借助热压头(10)与接触连接表面(11)相互作用,同时,其外部带状导线端部从电源模块(1)的壳体中突出来。
Description
技术领域
本发明涉及一种具有作为电路载体的绝缘板的电源模块(power module),绝缘板两侧涂有金属,本发明还涉及一种制造这种电源模块的工序。
背景技术
电源模块在电路载体上具有许多功率元件。电路载体借助其相应接触连接表面上的粘合和焊接连接,连接到外部带状导线,该外部带状导线突出在电源模块壳体外面。特别由于电源模块中的粘合连接要求质量高、昂贵的材料,所以这种类型的电源模块的制造成本很高。如果电源模块是焊接连接,为了制造这些连接,需要耗费的能量很高、很昂贵,而且电源模块的功率元件被暴露,造成高热量负担。
发明内容
本发明的一个目标在于提供一种电源模块,该电源模块的制造成本很低,温度很低,而且还提供了制造这种电源模块的方法。
根据本发明,提供了一种电源模块,具有一个绝缘板,该绝缘板两侧涂有金属,可以作为电路载体,电路载体上侧的金属包括结构金属层和上面装配有功率元件的所述电路载体的上侧,电源模块(1)还具有带状导线,其内部带状导线端部借助热压头电连接到结构金属层的接触连接表面,其外部带状导线端部从电源模块的壳体突出来。
该电源模块的优点在于,由于内部带状导线端部借助热压头电连接和机械连接到接触连接表面,所以,电源模块可以经受得住所有的现有后端处理的温度范围,从机械角度来讲,很稳定也很可靠,以便于提高这种类型的电源模块的生产力。通过适当地使每个连接的热压头数量与连接强度相匹配,可以提高这种类型的连接的机械强度。进一步说,通过调整内部带状导线端部与电路载体的接触连接表面之间每个连接的热压头的数量,可以获得电源模块需要的电流密度。
进一步说,使用热压头的连接方法的优点在于,在后端处理过程中,可以在任何时间使用该方法,也就是说,可以在装配过程的开始或装配过程接下来的时间里使用。下面将参考实际的实施例来更加详细地描述该优点。
在本发明一个实施例中,电路载体上的功率元件借助结构金属层的导体轨道被连接到另外一个功率元件和/或接触连接表面。本发明的该实施例的优点在于,借助结构金属层的厚度和结构金属层中的导体轨道的宽度,导体轨道的横截面可以与需要的密度相匹配。功率元件可以是活性功率半导体芯片,或者也可以由无源元件组成,例如电阻器、电容器和线圈。对于活性功率元件来讲,最好使用MOS功率晶体管,IGBT晶体管(所示绝缘栅双极晶体管),功率二极管和/或闸流晶体管。
在本发明另一个实施例中,功率元件的活性上侧的电极借助借合连接,连接到电路载体的结构金属层的导体轨道和/或接触连接表面。为了达到这个目的,在功率元件的活性上侧提供有接触表面,该接触表面连接到功率元件电极。可以使用声能和/或热能将接合电线连接到这些接触表面,将电线从功率元件上侧引向导体轨道。也可以使用该接合电线的技术来将功率元件的电极连接到另一个电极和/或直接将电极连接到电路载体的接触连接表面。由于该接合连接件,使得无论是否预先制造了结构金属层体,功率元件的绕线可以保持柔韧性。
在本发明另一个实施例中,电路载体的绝缘板是一个陶瓷板,该陶瓷板由二氧化硅、氧化铝、氮化硅、氧化锆、氧化镁和碳化硅和其混合物组成。这种类型的陶瓷板作为电路载体的绝缘板,特别适合用于组合高频率的高功率情况,因为其相对非传导常数很低。
本发明另一个实施例中,电路载体具有一个玻璃纤维-增强型合成树脂,该合成树脂作为绝缘板。这种玻璃纤维一增强型合成树脂板也被认为是电路载体,借助调整玻璃纤维的比例,使其强度和非传导常数与电源模块的需要相匹配。因为玻璃纤维增强型合成树脂板比陶瓷板能获得相当可观的价格益处,所以这种类型的绝缘板可以用于低频率电源模块,该模块用来控制电机或用到电源供电的家用领域。
在本发明另一个实施例中,提供了一种电路载体,该电路载体在其下侧具有一层连续金属层。电路载体上的这层连续金属层同时形成了电源模块的外侧,一个散热片就连接到该侧。由于玻璃纤维增强型合成树脂板的热传导性不是特别高,因此,这种类型的连续金属层一方面将热分散在合成树脂板的整个表面上,另一方面,借助下侧和功率元件外侧的连续金属层,热发散得到改良。
在本发明另一个实施例中,电路载体的金属层包括铜或铜合金。铜的优点是,导电性高,导热性也很高。电路载体上侧的金属层特别需要高导电性,而在电路载体下侧的连续金属层上特别需要铜的高导热性。
为了提高铜的接合性,特别是在接触连接表面中的结构金属层的接合性,在本发明一个实施施例中,这些接触连接表面可以具有一个接合涂层,该接合涂层由两层即下层和上层组成,下层由抑制铜扩散的一层组成,上层由贵重金属层组成。在这种情况下,下层负责确保铜离子不会扩散到上层贵重金属层,并确保接触连接表面的上侧的接合连接件不会因为该扩散现象而变得很脆弱。抑制铜扩散的层包括镍或镍合金以实现该目的,特别的是,接触连接表面可以被掺磷的镍涂层覆盖。这种掺磷的镍涂层的优点也在于,可以直接在该镍涂层上制造接合连接件,而不需要贴合贵重金属。
如果用作接合电线的材料意味着接触连接表面上需要有一层贵重金属涂层,那么该层包括金、银、铝或其合金。与纯铜表面相比,这些贵重金属层的优点在于,它们对周围空气不敏感,而且还可以防止铜层的氧化。甚至金或金合金上只需涂十分之几毫微米的厚度就可以实现这个。因此,为处理接触连接表面耗费的纯贵重金属相当低,而且接合连接件很稳定。进一步说,接触连接表面的多层涂层的这种处理方法的优点在于,电路载体可以暂时储存,而接触连接表面不会被侵蚀或氧化。
在本发明另一个实施例中,电路载体两侧的金属层具有相似的抑制铜扩散的涂层和/或贵重金属层。在电路载体上侧的结构金属层和***载体下侧的连续金属层具有这种类似的涂层,它们具有的优点在于,处理过程简单化,在电路载体上侧构成金属层之前,由第一层铜或铜合金、抑制铜扩散的第二层以及包括贵重金属层的第三层组成的连续金属层,可以用化学方法或电镀到绝缘板两侧。形成电源模块的电路载体的这种类型的绝缘板,两侧都被涂布和处理过,比起使结构金属层上一定区域有选择地被接合涂层占据来讲,成本更低。
在本发明一个实施例中,热压头包括金、银、铜和/或其合金。用一个合适的工具将金或铝线放到接触表面上,该线借助压力和热量,接合到接触连接表面或内部导体端部表面上,在产生接合头后接合线被切断,不会形成接合线连接,这样通过热压接合在接触连接表面上或内部带状导线端部上形成的这种类型的热压头,其生产成本很低。接触连接表面上或内部带状导线端部表面上侧的热压头数量可以与电流密度和机械强度的需要相匹配。
本发明另一个实施例中,提供了包括铜或铜合金的导体。带状导线自身就是***载体的一部分,该***载体包括***载体框架,该***载体框架具有许多模块安装位置。在各个模块安装位置上,带状导线从***载体框架向电源模块的电路载***置延伸。这种类型的***载体可由铜板或铜线圈制成,其生产成本相对较低,因此带状导线的材料也可预先确定。
可以在内带状导线端部处理表面,因此,一方面能防止铜层的扩散,另一方面,方便连接到热压头。因此,在本发明一个实施例中,内部带状导线端部可以具有一个可以抑制铜扩散的涂层和/或一个贵重金属涂层,金属涂层的组成与接触连接表面上的接合涂层一致。
在本发明另一个实施例中,提供了一种电源模块,该模块是多片式模块,具有安装在电路载体上的功率半导体芯片。在本发明该实施例中,功率元件,在本实施例中是功率半导体芯片,不是先容纳在壳体中,然后再装配在电路载体上,而是没有装箱,就直接将该功率元件如半导体芯片安装在电路载体上,因此,使电源模块的整个装配过程的成本相对较低。
在本发明另一个实施例中,电源模块可以控制电机。这种类型的电机控制借助电源模块可以控制三相电机和给三相电机供电。在这种情况下,电源模块自身连接到单相或三相电源设备。这种类型的电源模块可以用来控制电机,也可以用来控制速度。最后,这种类型的电源模块也可以通过改变功率限制来适应三相电机的功率消耗。为了达到这个目的,在本发明另一个实施例中,电源模块具有一个输入级和一个输出级,输入级用来连接到单相或三相电源电缆,输出级用来控制三相电机。
为了进一步装配电源模块,本发明提供了一种***载体,该载体在每个模块安装位置上具有一个***载体框架,带状导线的内部带状导线端部在贴合电路载体的方向上从该框架延伸。然后,每个电路载体的接触连接表面上的热压头,在***载体的模块安装位置上被定向和连接到每个带状导线的内部带状导线端部。最后,许多功率元件都安装在每个模块安装位置上。***载体的每个模块安装位置上的功率元件和安装在电路载体上的功率元件一起被装箱,最后,***载体被划分成单独的多片式电源模块。
这种方法的优点在于,能承受高温的这种连接在处理过程中可以借助热压头进行引导,因此可以成功地承受装配功率元件的高温处理和试验需要的温度改变周期。
在该方法实施例中,改变了生产步骤的顺序,因为将功率元件贴合到电路载体上后,只借助热压头形成连接。在这个不同的方法中,先给电路载体装配功率元件,然后制造热压头,并将它贴合和连接到接触连接表面时。该处理顺序的优点在于:首先,大量电源模块的电路载体板与功率元件可以在平行的处理过程中装配起来,而且只有在该装配步骤之后,电路载体板才会划分成单独的电路载体。
在该方法另一个实施例中,将一种绝缘板作为电路载体,在所述绝缘板两侧层压有铜。两侧层压有铜的绝缘板还可以包括一层可以抑制铜扩散的金属层和一层贵重金属层。然后,两侧层压有铜的绝缘板在一单边构成一个接触岛,该接触岛用于将功率半导体芯片与导体轨道和接触连接表面装配起来。相对的铜层被保持为连续金属层。
在该方法另一个实施例中,通过蚀刻掩模用蚀刻的方法来完成金属层的图案。使用蚀刻掩模的这种蚀刻方法可以包括使用干蚀刻或湿蚀刻。还可以选择别的方法在电路载体上侧构成金属层,这些方法可以包括激光烧蚀法,它可以有选择地通过激光扫描来实现,而不需要预备掩模。如果应用的接合涂层可以抑制铜扩散,而且之后又贴合了一层贵重金属层,所述贵重金属层包括金、银、或铝,那么因为可以在两侧已经层压有铜的电路载体板的大量表面上实现电解沉积方法,所以证明应用的这种方法正确。
还可以选择使用丝网印刷术来将掺磷的镍层用作抑制铜扩散的层,同时,该层也可以用作接合涂层。丝网印刷术的优点在于,甚至在电路载体上侧构成金属层后,可以有选择地将抑制铜扩散的该层贴合到接触连接表面。
在该方法另一个实施例中,借助热压接合或热压超声接合法,热压头被贴合到内部带状导线端部和/或经涂布的接触连接表面。贴合到电路载体的接触连接表面,以及在内部带状导线端部与电路载体结合起来之前将热压头贴合到内部带状导线,都具有优点。在这两种情况下,所用的这些热压头可以同样用于大量电源模块。
在该方法另一个实施例中,功率半导体芯片被电连接,并借助焊接的方法机械地安装到***载体各个模块安装位置上的电路载体的接触岛。这种类型的焊接技术的优点在于:可靠性高,因此功率元件的使用寿命高,而且可以在安装热压头之前,和安装热压头之后使用。另一方面,功率半导体芯片可以电连接和借助导电粘合剂机械安装到电路载体的接触岛。这种不同的方法中温度相当低,这是由于为了让粘合剂交联形成热固性物质,只需要升高一点点温度。由于粘合剂接合法需要的成本比焊接法更低,因此如果要生产低工作负载的便宜电源模块,那么就使用粘合剂接合法。
在该方法另一个实施例中,功率半导体芯片的活性上侧的电极可以与彼此电连接,和/或借助接合连接件电连接到电路载体的结构金属层的导体轨道。该方法的优点在于:构成电路的灵活性高,甚至在功率半导体芯片装配在电路载体上之后都可以。
原则上说,每个电源模块可以容纳于充满硅凝胶的塑料壳体中,但是在任何情况下,有利的是,使用塑料注射模塑法比如传递模塑法来生产壳体,因为用这种方法,接合线、半导体芯片、内部带状导线端部连接的热压头和接合连接表面可以同时受到保护,并被该塑料壳体机械地固定住。
***载体包括许多模块安装位置,它可以在将电源模块包装在塑料箱的结尾时,借助压印的方法划分成单独多芯片电源模块。这是因为压印具有这样的优点,即从壳体中突出来的外带状导线与***载体框架分离的同时,外部带状导线端部可以弯曲,并且可以使其空间结构与计划的应用情况相匹配。
简而言之,本发明的基础是接线柱***法。该接线柱***法是热压缩法,在该方法中,接合线的部分熔化液滴被压到金属表面上,然后,被撕掉。热压头可以认为是钉头。在该钉头方法或热压头方法中,可以由金的合金形成电流开关凸块,一般称作凸块。然后,电路载体板被轻轻移动或转动,并且借助温度、超声波和压力,电连接到引导架的相应带状导线。在为此目的提供了接触连接表面的情况下,将一定数量的这些凸块连接到引导架的下侧,或电路载体的上侧。引导架和电路载体排列在一起,并借助加热、超声波和压力与彼此形成永久连接。在适合进行后端处理过程的温度范围内,这个连接在机械上是稳定的。每个接触连接表面上凸块数量由连接需要的机械强度和/或连接需要的电流密度确定。连接步骤可以正好在装配过程开始时进行,或在装配过程以后进行。
现在将结合附图详细描述本发明的实施例。
附图说明
附图1显示了本发明第一实施例一致的电源模块的横截面示意图;
附图2显示了电源模块的电路载体在贴合到内部带状导线端之前的横截面示意图,该电路载体在接触连接表面上具有热压头;
附图3显示了电源模块的电路载体在贴合到内部带状导线端之前的横截面示意图,内部带状导线端上具有热压头;
附图4显示了装配有电源模块的功率元件的电路载体在贴合到内部带状导线端之前的横截面示意图,内部带状导线端上具有热压头;
附图5显示了装配有电源模块的功率元件的电路载体在贴合到内部带状导线端之前的横截面示意图,该电路载体在接触连接表面上具有热压头;
附图6显示了电源模块在电路载体接触连接表面与内部带状导线端进行电连接和机械连接后,并在装箱之前的横截面示意图;
附图7显示了在装箱之前,***载体和电路载体的模块元件位置的平面示意图,所述***载体具有带状导线,所述电路载体已经借助热压头在模块安装位置上电连接和机械连接到内部带状导线端,并装配了功率元件。
具体实施方式
附图1显示了与本发明第一实施例一致的电源模块1的横截面示意图。参考数字2表示绝缘板,该绝缘板形成了电路载体3的机械底板。电路载体3可以与电路载体板4分离,电路载体板4包括许多电路载体3。参考数字5表示电路载体3和电路载体板4的上侧,在该上侧5上安排有结构金属层6。参考数字7表示功率元件,在该实施例中功率元件是功率半导体芯片23,功率元件7被安装到接触岛24上。在本发明的该实施例中,在这个横截面上,功率晶体管29和功率二极管30安排在共同的接触岛24上,该接触岛借助导体轨道连接到电路载体3上的接触-接合表面11上。因此,功率二极管30的阴极和功率晶体管29的集电极都与彼此电连接起来,而且另外,功率晶体管29的发射极和功率二极管30的阳极之间通过接合连接件17连接起来。
参考数字8表示带状导线,外部带状导线端部12从电源模块1的壳13中突出来,所述带状导线8的内部带状导线端部9借助热压头10被连接到接触连接表面11。
在内部带状导线端部与接触表面11之间安排了三个热压头,这些数量的热压头足以满足电流密度和电源模块的机械强度上的需要。外部带状导线端部从壳中突出来,稍微弯曲,以便于方便连接到上面安排的印刷电路板。
参考数字15表示功率半导体芯片23的电极,晶体管在其活性上侧16具有至少两个电极15,即双极功率晶体管的发射极和基极,功率二极管30在其活性上侧16具有至少一个电极,即阳极。
在该附图的右手边的横截面上,外部带状导线端部借助内部带状导线端部9、热压头10、接触连接表面11、导体轨道14和接触岛24,被连接到功率二极管30的阴极和功率晶体管29的集电极。在该附图的左手边的横截面上,带状导线8借助内部带状导线端部9、热压头10、接触连接表面11、导体轨道14和接合连接件17,被连接到功率晶体管29的发射极。带状导线8是***载体26的一部分,***载体包括许多模块安装位置25,如图1所示,电源模块1就从那儿被模压。在模压电源模块1期间,同时也弯曲了外部带状导线端部12。
参考数字20表示电路载体3的上侧,这层载体上被覆盖了一层连续的金属层21。电路载体3下侧20上的连续金属层21同时也形成了电源模块的下侧。这样设计的优点在于,功率元件7中产生的热可以通过这层金属层散开。为了提高散热性而由此冷却这层金属层,这层金属层可以被连接到散热器和导热块。这种类型的电源模块1非常可靠,因为内部带状导线端部9和接触连接表面11通过热压头10形成的连接确保了将功率半导体芯片23连接到带状导线8,这种连接机械上稳定,电性可靠。
附图2显示了电源模块的电路载体3在贴合到内部带状导线端部9之前的横截面示意图,该电路载体在接触连接表面11上具有热压头10。与附图1具有相同功能的元件在此不再做特别的描述。
电路载体3,是电路载体板4的一部分,而且与之分离,它实际上包括陶瓷板18,陶瓷板由二氧化硅、氧化铝、氧化锆、氧化镁和碳化硅和其混合物制成。在其下面,该陶瓷板具有一层连续的金属层21,同时,该金属层也形成了后来的电源模块的上侧。结构金属层6,实际上包括铜或铜合金,并涂有一个接合涂层22,被用于电路载体板4的上侧。该层接合涂层22可以由掺有磷的单层镍组成,磷重量含量在5%和10%之间。
这层涂层抑制铜的扩散,防止铜离子扩散到热压头10中,在热压头中,铜离子会使接合连接件更脆弱。在其表面5上,电路载体3还没有任何功率半导体芯片,但热压头已经安排在其接触连接表面11上了。在升高的温度、压力下,利用超声波,使用热压方法,在箭头A的方向上,将内部带状导线端部9加到这些热压头10上。为了达到这个目的,内部带状导线端部9可以同样配备一个接合涂层22。这个接合涂层22由一层可以抑制铜扩散的层和贵重金属层组成,贵重金属层方便将带状导线端部接合到电路载体3的热压头10上。
附图3是电源模块的电路载体3在加到内部带状导线端部9之前的横截面示意图,所述导体端部由热压头10。前面附图中具有同样功能的元件用类似的参考数字来表示,并不再做另外的描述。
也是附图3所示实施例中,电路载体3还没有装配功率半导体芯片,只在其表面上具有芯片岛24、导体轨道14、和接触连接表面11。与前面附图2所示实施例不同的是,在该实施例中,热压头10首先被接合到内部带状导线端部,由此接合到***载体26,***载体26包括许多模块安装位置25,因此具有多样化的带状导线和内部带状导线端部9,这些带状导线上具有平行的热压头10。然后,准备好适当的电路载体3,在每个模块安装位置25上,所述电路载体在其接触连接表面11上没有任何热压头,将电路载体机械地和功率地连接到具有热压头10的内部带状导线端部9,结果,沿着箭头A的方向,内部带状导线端部9接合到接触连接表面11上。
附图4是电路载体3在贴合内部带状导线端部9之前的横截面示意图,该电路载体装配有作为电路模块的电路元件7,所述导体端部具有热压头10。与前面附图的元件具有同样功能的元件用类似的参考数字表示,并不再做附加描述。
在附图4所示的实施例中,首先,电路载体板4的尺寸要完全能满足许多电路载体3的需要,也就是说,在电路载体3的每个单独位置上,都装配有功率半导体芯片23,功率半导体芯片的电极借助接合连接件,电连接到彼此或导体轨道14上。然后,只有包括许多电路载体3的电路载体板4,移动到***载体26的模块安装位置25,在安装位置上,电路载体板接合到准备好的内部带状导线端部9,该导体已经装配有热压头10。为了达到这个目的,***载体的带状导线端部可以沿着箭头A所示方向,再次降低位置,或者相反,可以使带有半导体芯片和接合接头的电路载体朝着***载体移动。
与前面附图1和2所示实施例不同的是,本发明的该实施例中,每个接合都具有五个热压头,以便于确保更高的电流密度和更大的机械强度。
附图5显示了在贴合内部带状导线端部9之前电路载体3的横截面示意图,该电路载体装配有作为电源模块的功率元件7,还在接触连接表面11上具有热压头10。与前面附图的元件具有同样功能的元件用类似的参考数字表示,并不再做附加描述。
在附图5所示实施例中,与附图4所示实施例不同的是,在接触连接表面11上,电路载体3具有热压头,以便于借助热压头,接合连接到内部带状导线端部9。与附图2和3所示实施例不同的是,附图5所示实施例中,在***载体3上,已经具有电源模块的元件,这些元件也已经完全被接合连接件用电线连接起来,因此,在电源模块装箱之前,可以很快将内部带状导线贴合到接触连接表面上。
附图6显示了装箱前,将电路载体3的接触连接表面11电连接和机械连接到内部带状导线端部9之后,电源模块1的模截面示意图。与前面附图的元件具有同样功能的元件用类似的参考数字表示,并不再做附加描述。
附图6大致地显示了附图2、3、4和5中的处理步骤,但是在该图中,只有三个热压头10,没有象附图3和4一样显示五个热压头。可以从该图中看出的是,电源模块可以借助热压头的数量,与内部带状导线端部9和接触连接表面11之间的连接区域内的机械强度和电流密度的需要相匹配。与附图1所示电源模块的横截面不同之处在于,在附图1中,带状导线从壳体两侧突出来,然而,在附图6中,带状导线可以只从壳体一侧突出来。
附图7显示了具有带状导线8的***载体26以及电路载体3的模块安装位置的平面图,电路载体借助热压头10在装箱前电连接和机械连接到模块安装置25上的内部带状导线端端部9,并装配有功率元件23。与前面附图的元件具有同样功能的元件用类似的参考数字表示,并不再做附加描述。
附图7所示实施例中,具有功率元件7的电路载体安排在***载体26的下面。附图7只显示了***载体26的一个模块安装位置25,每个模块安装位置25被***载体27包围,带状导线8从那儿朝着***载体框架27的中心延伸。带状导线8的外端12被固定到***载体框架,带状导线8的内部带状导线端部9突出在电路载体3之外。
虚线28表示压印轨迹,压印工具沿着该轨迹从***载体框架压印出电源模块,该电源模块装入模块安装位置25的箱中。在附图7中用虚线显示了热压头10,热压头安排在具有接触连接表面11的电路载体3和内部带状导线端部9之间。附图7所示实施例包括可装六个并可手提的厚纸板箱件,该纸板箱件包括六个功率晶体管29,这些功率晶体管借助六个外带状导线101、102、103、104、105和106被激励,并与六个功率二极管30相互作用。
参考符号表
1功率元件
2绝缘板
3电路载体
4电路载体板
5电路载体板的电路载体的上侧
6结构金属层
7功率元件
8带状导线
9内部带状导线端部
10热压头
11接触连接表面
12外带状导线端部
13电源模块箱
14导体轨道
15电极
16功率半导体芯片的活性上侧
17接合连接件
18陶瓷板
19玻璃纤维增强型合成树脂
20电路载体下侧
21连续金属层
22接合涂层
23功率半导体芯片
24接触岛
25模块安装位置
26***载体
27***载体框架
28表示压印轨迹的虚线
29功率晶体管
30功率二极管
Claims (45)
1.一种电源模块,具有一个绝缘板(2),该绝缘板两侧涂有金属,可以作为电路载体(3),电路载体上侧(5)的金属包括结构金属层(6)和上面装配有功率元件(7)的所述电路载体(3)的上侧,电源模块(1)还具有带状导线(8),其内部带状导线端部(9)借助热压头(10)电连接到结构金属层(6)的接触连接表面(11),其外部带状导线端部(12)从电源模块(1)的壳体(13)突出来。
2.根据权利要求1所述的电源模块,其特征在于:功率元件(7)借助结构金属层(6)的导体轨道(14)彼此连接和/或连接到接触连接表面(11)。
3.根据权利要求2所述的电源模块,其特征在于:电源模块(7)的活性上侧(16)的电极(15)借助接合连接件(17)连接到导体轨道(14)和/或结构金属层(6)的接触连接表面(11)。
4.根据前面任一权利要求所述的电源模块,其特征在于:电路载体(3)用陶瓷板(18)作为绝缘板(2),该陶瓷板包括SiO2、Al2O3、Si3N4、ZrO2、MgO或SiC或其混合物。
5.根据权利要求1~3中任意之一所述的电源模块,其特征在于:电路载体(3)用玻璃纤维增强型合成树脂(19)作为绝缘板(2)。
6.根据权利要求1~3中任意之一所述的电源模块,其特征在于:电路载体(3)的下侧(20)上的金属包括连续金属层(21)。
7.根据权利要求1~3中任意之一所述的电源模块,其特征在于:电路载体(3)的金属层(6、21)包括铜或铜合金。
8.根据权利要求1~3中任意之一所述的电源模块,其特征在于:接合涂层(22)被设置在接触连接表面(11)上,热压头(10)被设置在接合涂层(22)上。
9.根据权利要求8所述的电源模块,其特征在于:接合涂层(22)包括抑制铜扩散的一层和/或贵重金属层。
10.根据权利要求9所述的电源模块,其特征在于:抑制铜扩散的层包括镍或镍合金。
11.根据权利要求9所述的电源模块,其特征在于:贵重金属层包括金、银、铝或其合金。
12.根据权利要求9所述的电源模块,其特征在于:接触连接表面(11)包括可以抑制铜扩散的掺磷的镍涂层。
13.根据权利要求12所述的电源模块,其特征在于:接触连接表面(11)在所述可以抑制铜扩散的掺磷的镍涂层上具有金或金合金的涂层,该金或金合金的涂层厚度有几十毫微米。
14.根据权利要求6所述的电源模块,其特征在于:电路载体(3)两侧的金属层(6、21)具有相同的抑制铜扩散涂层和/或贵重金属层。
15.根据权利要求1~3中任意之一所述的电源模块,其特征在于:热压头(10)包括金、铝、铜和/或其合金。
16.根据权利要求1~3中任意之一所述的电源模块,其特征在于:带状导线(8)包括铜或铜合金。
17.根据权利要求8所述的电源模块,其特征在于:内部带状导线端部(9)具有一个抑制铜扩散的涂层和/或一个贵重金属层,其成分与接触连接表面(11)上的接合涂层(22)相一致。
18.根据权利要求1~3中任意之一所述的电源模块,其特征在于:电源模块(1)是一个多芯片模块,该模块的电路载体(3)上安排有半导体芯片(23)。
19.根据权利要求1~3中任意之一所述的电源模块,其特征在于:电源模块(1)有一个控制电机的控制器。
20.一种生产电源模块的方法,包括以下步骤:
在众多模块安装位置上提供一个具有接触岛(24)、导体轨道(14)和结构金属层(6)的接触连接表面(11)的电路载体板(4);
至少给接触连接表面(11)涂上接合涂层(22);
将热压头(10)连接到接触连接表面(11);
针对每个模块安装位置(25),将电路载体板(4)划分成单独的电路载体(3);
提供一个具有***载体框架的***载体(26),带状导线(8)的内部带状导线端部(9)从那儿沿着众多模块安装位置(25)延伸;
将各个电路载体(3)的接触连接表面(11)上的热压头(10)定向并连接到***载体(26)的模块安装位置(25)上的各个引导架的内部带状导线端部(9);
将众多功率元件(7)连接在各个模块安装位置(25)上;
连接接合连接件(17);
将***载体(26)的各个模块安装位置(25)与设置在电路载体上的功率元件(7)一起包装在壳体(13)内;
将***载体(26)划分成单独的多芯片电源模块(1)。
将***载体(26)划分成单独的多芯片电源模块(1)。
21.根据权利要求20所述的方法,其特征在于:提供绝缘板(2)来作为电路载体(3),该绝缘板两侧层涂附有铜,这些铜层之一构成安装功率半导体芯片(23)的接触岛(24),导体轨道(13)和接触连接表面(11),而相对的铜层仍然保持为连续金属层。
22.根据权利要求20所述的方法,其特征在于:可以借助蚀刻掩模用蚀刻的方法来构成所述结构金属层(6)。
23.根据权利要求20所述的方法,其特征在于:可以借助蚀刻掩模用湿蚀刻或干蚀刻的方法来构成所述金属层(6)的结构。
24.根据权利要求20所述的方法,其特征在于:可以借助激光消融来构成所述结构金属层(6)。
25.根据权利要求20所述的方法,其特征在于:用电镀法首先形成接合涂层(22),可以抑制铜扩散的一层,然后形成包括金、银、或其合金的一个金属层。
26.根据权利要求25所述的方法,其特征在于:借助丝网印刷术,将掺磷的镍涂层作为抑制铜扩散的一层。
27.根据权利要求20所述的方法,其特征在于:热压头借助热压接合法或热压超声接合法连接到内部带状导线端部(9)和/或接触连接表面(11)。
28.根据权利要求20所述的方法,其特征在于:在***载体(26)的各个模块安装位置(25)上,借助焊接法,将功率半导体芯片(23)电连接和机械安装到电路载体(3)的接触岛(24)。
29.根据权利要求20所述的方法,其特征在于:在***载体(26)的各个模块安装位置(25)上,借助粘合剂接合技术,将功率半导体芯片(23)机械安装到电路载体(3)的接触岛(24),和/或借助导电粘合剂将功率半导体芯片(23)电连接起来。
30.根据权利要求28或29所述的方法,其特征在于:功率半导体芯片(23)的活性上侧(16)的电极(15)与彼此电连接,和/或借助接合连接件(17)连接到结构金属层(6)的导体轨道(14)。
31.根据权利要求20所述的方法,其特征在于:借助有关塑料箱的高压注射模塑法,将各个模块安装位置(25)包装在壳体(13)中。
32.根据权利要求20所述的方法,其特征在于:借助压印的方法,将***载体(26)划分成单独的多芯片电源模块(1)。
33.一种生产电源模块(1)的方法,包括以下步骤:
提供具有大量模块安装位置(25)的电路载体板(4),其包括接触岛(24)、导体轨道(14)和结构金属层(6)的接触连接表面(11);
有选择地给接触连接表面(11)涂上接合涂层(22);
将电路载体板(4)上的大量功率元件(7)装配在各个模块安装位置(25);
将接合连接件(17)连接在各个模块安装位置(25);
将热压头(10)连接到接触连接表面(11);
将电路载体板(4)划分成每个模块安装位置(25)的单独的电路载体(3);
提供一个具有***载体框架的***载体(26),带状导线(8)的内部带状导线端部(9)从那儿沿着众多模块安装位置(25)延伸;
将各个电路载体(3)的接触连接表面(6)上的热压头(10)定向并连接到***载体(26)的模块安装位置(25)上的各个引导架的内部带状导线端部(9);
将***载体(26)的各个模块安装位置(25)与设置在电路载体(3)上的功率元件(7)一起包装在壳体(13)内;
将***载体(26)划分成单独的多芯片电源模块(1)。
34.根据权利要求33所述的方法,其特征在于:提供绝缘板(2)来作为电路载体(3),该绝缘板两侧层涂附有铜,这些铜层之一构成安装功率半导体芯片(23)的接触岛(24),导体轨道(13)和接触连接表面(11),而相对的铜层仍然保持为连续金属层。
35.根据权利要求33所述的方法,其特征在于:可以借助蚀刻掩模用蚀刻的方法来构成所述结构金属层(6)。
36.根据权利要求33所述的方法,其特征在于:可以借助蚀刻掩模用湿蚀刻或干蚀刻的方法来构成所述金属层(6)的结构。
37.根据权利要求33所述的方法,其特征在于:可以借助激光消融来构成所述结构金属层(6)。
38.根据权利要求33所述的方法,其特征在于:用电镀法首先形成接合涂层(22),可以抑制铜扩散的一层,然后形成包括金、银、或其合金的一个金属层。
39.根据权利要求38所述的方法,其特征在于:借助丝网印刷术,将掺磷的镍涂层作为抑制铜扩散的一层。
40.根据权利要求33所述的方法,其特征在于:热压头借助热压接合法或热压超声接合法连接到内部带状导线端部(9)和/或涂布的接触连接表面(11)。
41.根据权利要求33所述的方法,其特征在于:在***载体(26)的各个模块安装位置(25)上,借助焊接法,将功率半导体芯片(23)电连接和机械安装到电路载体(3)的接触岛(24)。
42.根据权利要求33所述的方法,其特征在于:在***载体(26)的各个模块安装位置(25)上,借助粘合剂接合技术,将功率半导体芯片(23)机械安装到电路载体(3)的接触岛(24),和/或借助导电粘合剂将功率半导体芯片(23)电连接起来。
43.根据权利要求41或42所述的方法,其特征在于:功率半导体芯片(23)的活性上侧(16)的电极(15)与彼此电连接,和/或借助接合连接件(17)连接到结构金属层(6)的导体轨道(14)。
44.根据权利要求33所述的方法,其特征在于:借助有关塑料箱的高压注射模塑法,将各个模块安装位置(25)包装在壳体(13)中。
45.根据权利要求33所述的方法,其特征在于:借助压印的方法,将***载体(26)划分成单独的多芯片电源模块(1)。
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DE10157362A DE10157362B4 (de) | 2001-11-23 | 2001-11-23 | Leistungsmodul und Verfahren zu seiner Herstellung |
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DE10316136A1 (de) * | 2003-04-09 | 2004-11-18 | Ixys Semiconductor Gmbh | Gekapselte Leistungshalbleiteranordnung |
JP2006278913A (ja) * | 2005-03-30 | 2006-10-12 | Toyota Motor Corp | 回路装置とその製造方法 |
DE102005033469B4 (de) * | 2005-07-18 | 2019-05-09 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleitermoduls |
DE102005045100A1 (de) * | 2005-09-21 | 2007-03-29 | Infineon Technologies Ag | Verfahren zum Herstellen eines Leistungshalbleitermoduls |
CN100464405C (zh) * | 2005-10-31 | 2009-02-25 | 台达电子工业股份有限公司 | 电源模块的封装方法及其结构 |
JP2007335632A (ja) | 2006-06-15 | 2007-12-27 | Toyota Industries Corp | 半導体装置 |
US20080179722A1 (en) * | 2007-01-31 | 2008-07-31 | Cyntec Co., Ltd. | Electronic package structure |
US9113583B2 (en) | 2012-07-31 | 2015-08-18 | General Electric Company | Electronic circuit board, assembly and a related method thereof |
EP3480846A1 (en) * | 2017-11-03 | 2019-05-08 | Infineon Technologies AG | Semiconductor arrangement with reliably switching controllable semiconductor elements |
US20210066157A1 (en) * | 2018-01-18 | 2021-03-04 | Abb Schweiz Ag | Power electronics module and a method of producing a power electronics module |
JP7001826B2 (ja) * | 2018-07-12 | 2022-01-20 | ローム株式会社 | 半導体装置 |
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JPS6345826A (ja) * | 1986-08-11 | 1988-02-26 | インターナショナル・ビジネス・マシーンズ・コーポレーシヨン | 半導体集積回路装置の接続構造 |
US5103290A (en) * | 1989-06-16 | 1992-04-07 | General Electric Company | Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip |
JPH04503283A (ja) * | 1989-07-03 | 1992-06-11 | ゼネラル・エレクトリック・カンパニイ | 半導体チップを含むインダクタンスの小さいカプセル封じパッケージ |
US5025114A (en) * | 1989-10-30 | 1991-06-18 | Olin Corporation | Multi-layer lead frames for integrated circuit packages |
US5139972A (en) * | 1991-02-28 | 1992-08-18 | General Electric Company | Batch assembly of high density hermetic packages for power semiconductor chips |
DE4130160A1 (de) * | 1991-09-11 | 1993-03-25 | Export Contor Aussenhandel | Elektronische schaltung |
DE4239857A1 (de) * | 1992-11-27 | 1994-06-01 | Abb Research Ltd | Leistungshalbleitermodul |
US5648679A (en) * | 1994-09-16 | 1997-07-15 | National Semiconductor Corporation | Tape ball lead integrated circuit package |
US5650663A (en) * | 1995-07-03 | 1997-07-22 | Olin Corporation | Electronic package with improved thermal properties |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
US5783857A (en) * | 1996-07-25 | 1998-07-21 | The Whitaker Corporation | Integrated circuit package |
US5689091A (en) * | 1996-09-19 | 1997-11-18 | Vlsi Technology, Inc. | Multi-layer substrate structure |
US5854512A (en) * | 1996-09-20 | 1998-12-29 | Vlsi Technology, Inc. | High density leaded ball-grid array package |
US6337522B1 (en) * | 1997-07-10 | 2002-01-08 | International Business Machines Corporation | Structure employing electrically conductive adhesives |
JP3910363B2 (ja) * | 2000-12-28 | 2007-04-25 | 富士通株式会社 | 外部接続端子 |
US20020182773A1 (en) * | 2001-06-04 | 2002-12-05 | Walsin Advanced Electronics Ltd | Method for bonding inner leads of leadframe to substrate |
KR100416000B1 (ko) * | 2001-07-11 | 2004-01-24 | 삼성전자주식회사 | 다수의 핀을 갖는 부품이 실장되는 인쇄회로기판 |
US7245500B2 (en) * | 2002-02-01 | 2007-07-17 | Broadcom Corporation | Ball grid array package with stepped stiffener layer |
US20040016995A1 (en) * | 2002-07-25 | 2004-01-29 | Kuo Shun Meen | MEMS control chip integration |
US7091594B1 (en) * | 2004-01-28 | 2006-08-15 | Amkor Technology, Inc. | Leadframe type semiconductor package having reduced inductance and its manufacturing method |
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2001
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2002
- 2002-11-22 CN CNB021606293A patent/CN1240255C/zh not_active Expired - Fee Related
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DE10157362B4 (de) | 2006-11-16 |
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