CN1220057A - 电子部件,尤其是利用声表面波工作的电子部件－ofw部件 - Google Patents

电子部件,尤其是利用声表面波工作的电子部件－ofw部件 Download PDF

Info

Publication number
CN1220057A
CN1220057A CN97194936A CN97194936A CN1220057A CN 1220057 A CN1220057 A CN 1220057A CN 97194936 A CN97194936 A CN 97194936A CN 97194936 A CN97194936 A CN 97194936A CN 1220057 A CN1220057 A CN 1220057A
Authority
CN
China
Prior art keywords
substrate
protective layer
parts
component system
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN97194936A
Other languages
English (en)
Other versions
CN1169235C (zh
Inventor
A·斯特兹尔
H·克吕格尔
W·帕尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Siemens Matsushita Components GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Matsushita Components GmbH and Co KG filed Critical Siemens Matsushita Components GmbH and Co KG
Publication of CN1220057A publication Critical patent/CN1220057A/zh
Application granted granted Critical
Publication of CN1169235C publication Critical patent/CN1169235C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/0585—Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

具有装在基板(3)上并电接触的部件***(1,2)的OFW部件,其中在部件侧面上提供面向离开部件***(1,2)和基板(3)连接区方向的保护层(8)以及保护层(8)对部件***(1,2)形成防止对基板(3)受环境影响的密封层。

Description

电子部件，尤其是利用声表面波工作 的电子部件-OFW部件
根据权利要求1的描述，本发明涉及电子部件，尤其是涉及用声表面波工作的部件-OFW部件。
大家知道，电子部件通过保护层防止环境影响如化学物质或许湿度的侵蚀。因而例如US-PS3438873描述通过氧化硅、氮化硅和混合硅化物如或许为硅酸铝保护半导体部件。这时保护层直接涂敷到半导体部件的***上。这里关于部件***理解为包含部件的有源电子元件的基板。换言之表示在部件***情况下涉及除了包含部件的外壳之外的部件。
在确定的电子部件情况下上述类型的保护层涂敷到部件***本身上可能是不合适的，甚至对部件功能有害。例如在用声表面波工作的部件情况下就是这种情况，因为在这类部件的部件***上涂敷保护层能影响声表面波的传播。对此的另一例是机械应力的传感器，因为由传感器***内的保护层引起机械的过大应力能影响对于待测机械应力的检测。
基于本发明的任务是：给出一种办法能够防止电子部件受环境影响，而且能够不因涂敷在部件***上的保护层产生损害。
本任务在本文一开始类型的电子部件情况下根据本发明由权利要求1特征部分的标志解决。
本发明的改进为从属权利要求的对象。
本发明依靠附图的图所描绘的实施例详细说明如下。这里图1到图3图示给出了由本发明构成的电子部件的各种实施例。
在图1电子部件实施例，一部件***电接触装配在基板3上。部件***通过衬底上和包围未图示导电结构的绝缘框架2简略描述。在此导电结构情况下，对于OFW部件它可以涉及到例如叉指式换能器、谐振器或反射器。
在本发明的范围内所谓“基板”理解为在合成物基、玻璃基或陶瓷基上的印刷电路衬底。在基板3上提供印制导线4，该印制导线经缓冲件5与部件***的衬底1上的(未图示的)导电结构相接触。在这种电接触中涉及本身公知的所谓倒装晶片式安装。
在包围衬底1上导电结构的框架2和印制导线4之间提供例如由环氧树脂或玻璃构成的绝缘层6。最后在部件***1、2和基板3之间的联接区提供一镶框7，在该镶框可涉及例如粘着剂、热塑合成树脂或塑胶。因此特别提供该镶框以便吸收由部件***和基板的不同热膨胀引起以及能够通过缓冲件5机械上损害在衬底1上导电结构和基板3的印制导线之间电接触的剪力。
根据本发明在遍及结构部件***1、2和基板3之间连接区的部件端上，提供一保护层8用于对部件***形成防止对基板环境影响的密封的封闭层。正如在以下还要详细说明的那样，该保护层可以不同方式构成。
在图2的OFW部件的实施例中OFW的部件***通过压电衬底10并在该预定的导电结构11和为导电结构的引线面12-焊接点-上形成。在导电结构11的情况下例如又涉及叉指式换能器、谐振器或反射器。导电结构11和焊接点12按照图1的实施例为绝缘框架21所包围。而图2的OFW部件***10、11、12的描绘完成是图解性质。OFW部件用的这种部件***的完整结构本身是大家熟悉的，因此在这里不详细说明。
此外，提供一基板13，在其转向部件***10、11、12的侧面上提供在其上具有缓冲件15的印制导线14，经缓冲件15实现部件上在焊接点12的接触。基板13的构成不限于双层性。多于两层也是可以应用的。
由部件通过下述方式引出电接通，即，印制导线14围绕基板13建立，正如在图2左侧所示，或者通过基板经引线16-1,16-2,16-3在基板13的外侧与印制导线17相连。电引线16-1,16-2,16-3在垂直方向偏心安排用于阻止影响部件功能的化学物质进入，即：通过引线的偏心构成保证从基板13的外侧来的气密性。当印制导线14围绕基板13建立并经缓冲件15与焊接点12相连，则在印制导线14和下述保护层19之间必须一绝缘层20。
部件***10、11、12通过塑料涂层18覆盖在基板13上。该覆盖层18通过热塑合成树脂、塑胶或热塑形成。
根据本发明在覆盖层上面向离开部件***10、11、12和基板13之间的连接区方向提供根据本发明的保护层19，该保护层形成防止对基板13环境影响的密封层。
正如以上说明，图1的保护层8和图2的保护层19可以不同方式构成。根据实施例它可以是包含金属的层或完全金属层。此外，它也可以通过多个分层形成(在图1和2内并未特别表示)，其中至少有一层是金属层。此外分层之一可以是玻璃层，此时涉及分层系列的下分层。例如，铜、镍或金可考虑作为金属区。金属层可以通过蒸发、真空金属喷涂、电镀或叠层胶合涂敷。在必要时在金属层上提供未特别说明的抗腐蚀层。此外，在金属层下也可以提供未特别描绘的粘附层。
正如依靠图2的实施例描绘的那样，保护层19，即：尤其是其金属部分是电接触的，以致保护层19不仅是对环境影响起保护的层，而且同时也形成对部件***10、11、12的高频屏蔽。但是为此目的，保护层19与基板13上的印制导线14相连，正如在图2通过焊接22所描绘的那样。
在图1和图2的相同部分提供同一参考符号的图3给出一实施例，其中部件***是导线连接的。这时衬底1借助一合适的连接，例如粘接30固定在基板3上。在转向固定区的一侧，经接触线31引线连接到印制导线4上。
在本实施例，按照图2的实施例塑料涂层18提供一本发明的保护层19。

Claims (14)

1．电子部件，尤其是用声表面波工作的部件-OFW部件-，其中包含在衬底(1；10)上的导电结构(11,12)的部件***(1,2；10,11,12)在基板(3；13)上电接触装配，并且其中提供对部件***(1,2；10,11,12)屏蔽环境影响的保护层(8；9)，其特征在于：在部件一侧提供保护层，该保护层面向离开部件***(1,2；10,11,12)和基板(3；13)之间的连接区方向，并对部件***(1,2；10,11,12)形成防止对基板(3；13)环境影响的密封层。
2．根据权利要求1所述的部件，其特征为：以倒装晶片方式的技术把部件***(1,2；10,11,12)装配在基板(3；13)上。
3．根据权利要求1所述的部件，其特征为：部件***(1)固定在基板(3)上，借助导线接触实现电连接。
4．根据权利要求1或2所述的部件，其特征为：在面向离开部件***(1,2)和基板(3)之间的连接区方向的衬底(1)侧到基板(3)的保扩层(8)是这样涂敷的，以致形成对基板(3)环境影响的更密封的封闭层。
5．根据权利要求1到3之一所述的部件，其特征为：在部件***(10,11,12)上提供一塑料覆盖层(18)，一直到基板(13)的塑料覆盖层(18)上保护层是这样涂敷的，以致形成防止对基板(13)的环境影响的密封层。
6．根据权利要求1到5之一所述的部件，其特征为：保护层(18；19)是含金属的层。
7．根据权利要求1到之一所述的部件，其特征为：保护层(8)是金属层。
8．根据权利要求1到5之一所述的部件，其特征为：保护层(8；19)是由多个分层形成的层。
9．根据权利要求8所述的部件，其特征为：至少一个分层是金属层。
10．根据权利要求8所述的部件，其特征为：至少一个分层是玻璃层。
11．根据权利要求10所述的部件，其特征为：玻璃层是分层系列的下分层。
12．根据权利要求1到11之一所述的部件，其特征为：在保护层(8；19)上提供一抗腐蚀层。
13．根据权利要求1到12之一所述部件，其特征为：在保护层(8；19)之下提供一粘接层。
14．根据权利要求1到13之一所述部件，其特征为：保护层(8；19)的金属部分是电接触的。
CNB971949360A 1996-05-24 1997-05-23 电子部件、尤其是利用声表面波工作的电子部件-ofw部件 Expired - Lifetime CN1169235C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19621127.1 1996-05-24
DE19621127 1996-05-24

Publications (2)

Publication Number Publication Date
CN1220057A true CN1220057A (zh) 1999-06-16
CN1169235C CN1169235C (zh) 2004-09-29

Family

ID=7795328

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971949360A Expired - Lifetime CN1169235C (zh) 1996-05-24 1997-05-23 电子部件、尤其是利用声表面波工作的电子部件-ofw部件

Country Status (7)

Country Link
US (1) US6528924B1 (zh)
EP (1) EP0900477B1 (zh)
JP (1) JPH11510666A (zh)
CN (1) CN1169235C (zh)
CA (1) CA2255961A1 (zh)
DE (1) DE59704079D1 (zh)
WO (1) WO1997045955A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735890A (zh) * 2018-05-25 2018-11-02 张琴 准气密性声表面波元件封装结构及制作方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19806818C1 (de) 1998-02-18 1999-11-04 Siemens Matsushita Components Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements
DE19818824B4 (de) * 1998-04-27 2008-07-31 Epcos Ag Elektronisches Bauelement und Verfahren zu dessen Herstellung
DE19822794C1 (de) * 1998-05-20 2000-03-09 Siemens Matsushita Components Mehrfachnutzen für elektronische Bauelemente, insbesondere akustische Oberflächenwellen-Bauelemente
DE19933548C2 (de) * 1999-07-16 2001-07-26 Epcos Ag Passiviertes elektronisches Bauelement und Verfahren zur Herstellung einer Passivierung eines elektronischen Bauelements
FR2799883B1 (fr) 1999-10-15 2003-05-30 Thomson Csf Procede d'encapsulation de composants electroniques
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
DE10006446A1 (de) * 2000-02-14 2001-08-23 Epcos Ag Verkapselung für ein elektrisches Bauelement und Verfahren zur Herstellung
DE10007178A1 (de) * 2000-02-17 2001-08-23 Epcos Ag Oberflächenwellenfilter mit Reaktanzelementen
US20020097562A1 (en) 2000-12-18 2002-07-25 Tdk Corporation Electronic device and manufacturing same
US6930397B2 (en) * 2001-03-28 2005-08-16 International Rectifier Corporation Surface mounted package with die bottom spaced from support board
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US7094626B2 (en) * 2001-09-28 2006-08-22 Epcos Ag Method for encapsulating an electrical component
DE10164502B4 (de) * 2001-12-28 2013-07-04 Epcos Ag Verfahren zur hermetischen Verkapselung eines Bauelements
DE10238523B4 (de) * 2002-08-22 2014-10-02 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
DE10300958A1 (de) * 2003-01-13 2004-07-22 Epcos Ag Modul mit Verkapselung
JP4177182B2 (ja) * 2003-06-13 2008-11-05 富士通メディアデバイス株式会社 弾性表面波デバイス、そのパッケージ及びその製造方法
DE10329329B4 (de) * 2003-06-30 2005-08-18 Siemens Ag Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung
JP4180985B2 (ja) * 2003-07-07 2008-11-12 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
DE10336171B3 (de) * 2003-08-07 2005-02-10 Technische Universität Braunschweig Carolo-Wilhelmina Multichip-Schaltungsmodul und Verfahren zur Herstellung hierzu
DE10351428A1 (de) * 2003-11-04 2005-06-16 Epcos Ag Elektrisches Bauelement mit Verkapselung und Verfahren zur Herstellung
US6992400B2 (en) * 2004-01-30 2006-01-31 Nokia Corporation Encapsulated electronics device with improved heat dissipation
JP4576849B2 (ja) * 2004-03-01 2010-11-10 パナソニック株式会社 集積回路装置
US7750420B2 (en) * 2004-03-26 2010-07-06 Cypress Semiconductor Corporation Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device
US7298231B2 (en) 2004-05-27 2007-11-20 Kyocera Corporation Surface acoustic wave device and communication apparatus
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
US7259499B2 (en) * 2004-12-23 2007-08-21 Askew Andy R Piezoelectric bimorph actuator and method of manufacturing thereof
US7477118B2 (en) 2005-01-20 2009-01-13 Kyocera Corporation High frequency device mounting substrate and communications apparatus
DE102005008514B4 (de) * 2005-02-24 2019-05-16 Tdk Corporation Mikrofonmembran und Mikrofon mit der Mikrofonmembran
DE102005008511B4 (de) * 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
WO2009069421A1 (ja) 2007-11-28 2009-06-04 Murata Manufacturing Co., Ltd. 弾性波装置
US7647688B1 (en) * 2008-08-11 2010-01-19 Hrl Laboratories, Llc Method of fabricating a low frequency quartz resonator
DE102010056431B4 (de) 2010-12-28 2012-09-27 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
DE102018204625A1 (de) * 2018-03-27 2019-10-02 Siemens Aktiengesellschaft Gehäuse für einen Umrichter, Endstufe eines Umrichters mit einem derartigen Gehäuse, Umrichter sowie Luftfahrzeug mit einem Umrichter
US11244876B2 (en) 2019-10-09 2022-02-08 Microchip Technology Inc. Packaged semiconductor die with micro-cavity

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3438873A (en) 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films
US4028646A (en) * 1974-12-30 1977-06-07 Matsushita Electric Industrial Co., Ltd. Elastic surface wave devices and method for making the same
JPS5640668U (zh) * 1979-09-07 1981-04-15
US4883777A (en) 1988-04-07 1989-11-28 Nippon Electric Glass Company, Limited Sealing glass composition with filler containing Fe and W partially substituted for Ti in PbTiO3 filler
US4978879A (en) * 1988-07-27 1990-12-18 Fujitsu Limited Acoustic surface wave element
JPH02177609A (ja) * 1988-12-27 1990-07-10 Nec Corp 表面弾性波デバイス
JPH03173213A (ja) * 1989-12-01 1991-07-26 Matsushita Electric Ind Co Ltd 表面波装置
JPH03190312A (ja) * 1989-12-19 1991-08-20 Matsushita Electric Ind Co Ltd 弾性表面波装置
JP2673993B2 (ja) * 1990-07-02 1997-11-05 日本無線株式会社 表面弾性波装置
JPH04170811A (ja) 1990-11-05 1992-06-18 Fujitsu Ltd 弾性表面波デバイス
JPH0590872A (ja) * 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
JPH0590883A (ja) 1991-09-28 1993-04-09 Murata Mfg Co Ltd 弾性表面波装置の製造方法及び弾性表面波装置
JP3014901B2 (ja) 1993-07-06 2000-02-28 東京エレクトロン株式会社 熱処理装置
US5459368A (en) 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
JPH07154185A (ja) 1993-10-04 1995-06-16 Nec Corp 弾性表面波装置およびその製造方法
JPH07111438A (ja) 1993-10-08 1995-04-25 Hitachi Ltd 弾性表面波装置、及びその製造方法
JPH0851333A (ja) 1994-08-04 1996-02-20 Matsushita Electric Ind Co Ltd Ｓａｗ装置
US5939817A (en) * 1994-09-22 1999-08-17 Nippon Electric Co Surface acoustic wave device
JPH08107120A (ja) 1994-10-06 1996-04-23 Mitsubishi Electric Corp 高周波半導体集積回路装置，及びその製造方法
JP2872056B2 (ja) * 1994-12-06 1999-03-17 日本電気株式会社 弾性表面波デバイス
JP3328102B2 (ja) * 1995-05-08 2002-09-24 松下電器産業株式会社 弾性表面波装置及びその製造方法
US6262513B1 (en) * 1995-06-30 2001-07-17 Kabushiki Kaisha Toshiba Electronic component and method of production thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735890A (zh) * 2018-05-25 2018-11-02 张琴 准气密性声表面波元件封装结构及制作方法

Also Published As

Publication number Publication date
JPH11510666A (ja) 1999-09-14
WO1997045955A1 (de) 1997-12-04
US6528924B1 (en) 2003-03-04
CN1169235C (zh) 2004-09-29
EP0900477A1 (de) 1999-03-10
DE59704079D1 (de) 2001-08-23
EP0900477B1 (de) 2001-07-18
CA2255961A1 (en) 1997-12-04

Similar Documents

Publication Publication Date Title
CN1220057A (zh) 电子部件,尤其是利用声表面波工作的电子部件－ofw部件
CN102190278B (zh) 半导体装置及传声器
US6150748A (en) Surface-acoustic-wave device
US4737742A (en) Unit carrying surface acoustic wave devices
KR950013744B1 (ko) 인쇄회로장치
US6310421B2 (en) Surface acoustic wave device and method for fabricating the same
US5939817A (en) Surface acoustic wave device
KR20010067344A (ko) 전자 부품 및 그 조립 방법
US4736128A (en) Surface acoustic wave device
CN100359682C (zh) 电子标签及其制造方法
JPH0640560B2 (ja) 電子機械式時計機構の回路担体用の導体軌道・ネットワ−クを装着する方法とそのネットワ−ク
KR19990022072A (ko) 압력센서 및 압력센서의 제조방법
GB2297424A (en) Surface acoustic wave device
EP3680211B1 (en) Sensor unit and method of interconnecting a substrate and a carrier
JPH11150440A (ja) フリップチップ実装型表面弾性波素子の樹脂封止構造
JPH0818390A (ja) 弾性表面波装置
US20060238274A1 (en) Surface acoustic wave device
GB2171850A (en) Mounting surface acoustic wave components
JPH06188672A (ja) 電子部品装置
CN218444263U (zh) 压力传感器密封结构及电子设备
KR100658230B1 (ko) 표면탄성파를사용하는전자부품
KR19990072152A (ko) 표면 음파로 동작하는 전기 소자 및 제조 방법
JPH09307398A (ja) 電子部品
JP2554059Y2 (ja) 半導体装置の実装構造
JPH1155057A (ja) 固体素子デバイスの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Applicant after: Epcos Co., Ltd.

Applicant before: Siemens Matsushita Components GmbH & Co., KG

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: SIEMENS MATSUSHITA COMPONENTS GMBH AND CO. KG. TO: EPCOS AG

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20040929