CN1204156A - 电荷传送装置及其制造方法 - Google Patents
电荷传送装置及其制造方法 Download PDFInfo
- Publication number
- CN1204156A CN1204156A CN98102557A CN98102557A CN1204156A CN 1204156 A CN1204156 A CN 1204156A CN 98102557 A CN98102557 A CN 98102557A CN 98102557 A CN98102557 A CN 98102557A CN 1204156 A CN1204156 A CN 1204156A
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- Prior art keywords
- type semiconductor
- conductive
- electric charge
- semiconductor region
- dielectric film
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 166
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008676 import Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
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- 239000000463 material Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
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- 230000005540 biological transmission Effects 0.000 description 13
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- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
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- 238000000151 deposition Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP172387/97 | 1997-06-27 | ||
JP172387/1997 | 1997-06-27 | ||
JP9172387A JP3011137B2 (ja) | 1997-06-27 | 1997-06-27 | 電荷転送装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1204156A true CN1204156A (zh) | 1999-01-06 |
CN1201406C CN1201406C (zh) | 2005-05-11 |
Family
ID=15940990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981025579A Expired - Fee Related CN1201406C (zh) | 1997-06-27 | 1998-06-29 | 电荷传送装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6097044A (zh) |
JP (1) | JP3011137B2 (zh) |
KR (1) | KR100344685B1 (zh) |
CN (1) | CN1201406C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101872776A (zh) * | 2009-04-23 | 2010-10-27 | 索尼公司 | 固态成像装置及其制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3011137B2 (ja) * | 1997-06-27 | 2000-02-21 | 日本電気株式会社 | 電荷転送装置およびその製造方法 |
US6346722B1 (en) * | 1998-06-26 | 2002-02-12 | Nec Corporation | Solid state imaging device and method for manufacturing the same |
KR20010003830A (ko) * | 1999-06-25 | 2001-01-15 | 김영환 | 고체 촬상 소자 및 그 제조방법 |
JP3319456B2 (ja) * | 2000-01-27 | 2002-09-03 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
JP2001308313A (ja) | 2000-04-21 | 2001-11-02 | Nec Corp | 電荷転送装置及びそれを用いた固体撮像装置 |
US7084000B2 (en) * | 2003-12-16 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
FR2867308B1 (fr) * | 2004-03-02 | 2006-05-19 | Atmel Grenoble Sa | Circuit integre avec diode de lecture de tres petites dimensions |
JP5217251B2 (ja) * | 2007-05-29 | 2013-06-19 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
US7990604B2 (en) | 2009-06-15 | 2011-08-02 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
JPS6271273A (ja) * | 1985-09-24 | 1987-04-01 | Nec Corp | 電荷結合素子の製造方法 |
US5065203A (en) * | 1988-07-07 | 1991-11-12 | Tektronix, Inc. | Trench structured charge-coupled device |
US4992842A (en) * | 1988-07-07 | 1991-02-12 | Tektronix, Inc. | Charge-coupled device channel with countinously graded built-in potential |
JPH036836A (ja) * | 1989-06-02 | 1991-01-14 | Nec Corp | 電荷転送装置 |
DE69120773T2 (de) * | 1990-11-09 | 1997-02-06 | Matsushita Electronics Corp | Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung |
JPH04247629A (ja) | 1991-02-01 | 1992-09-03 | Fujitsu Ltd | 電荷結合デバイス及びその製造方法 |
JP2825004B2 (ja) * | 1991-02-08 | 1998-11-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 側壁電荷結合撮像素子及びその製造方法 |
JPH04337670A (ja) * | 1991-05-14 | 1992-11-25 | Sony Corp | Ccdシフトレジスタ |
DE69329100T2 (de) * | 1992-12-09 | 2001-03-22 | Koninklijke Philips Electronics N.V., Eindhoven | Ladungsgekoppelte Anordnung |
KR960015271B1 (ko) * | 1993-08-18 | 1996-11-07 | 엘지반도체 주식회사 | 전하전송장치의 제조방법 |
JP2647034B2 (ja) * | 1994-11-28 | 1997-08-27 | 日本電気株式会社 | 電荷結合素子の製造方法 |
JPH08204173A (ja) * | 1995-01-25 | 1996-08-09 | Sony Corp | 電荷転送装置の製造方法 |
JP3014026B2 (ja) * | 1995-04-04 | 2000-02-28 | 日本電気株式会社 | 電荷結合素子の製造方法 |
US5719075A (en) * | 1995-07-31 | 1998-02-17 | Eastman Kodak Company | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal |
JP2716011B2 (ja) * | 1995-08-09 | 1998-02-18 | 日本電気株式会社 | 電荷転送装置及びその製造方法 |
JP2904107B2 (ja) * | 1996-03-29 | 1999-06-14 | 日本電気株式会社 | 電荷転送装置の製造方法 |
JP3598648B2 (ja) * | 1996-04-02 | 2004-12-08 | ソニー株式会社 | 電荷転送素子及び電荷転送素子の駆動方法 |
JP2965061B2 (ja) * | 1996-04-19 | 1999-10-18 | 日本電気株式会社 | 電荷結合素子およびその製造方法 |
KR100215882B1 (ko) * | 1996-05-16 | 1999-08-16 | 구본준 | 고체촬상소자 제조방법 |
JP3003590B2 (ja) * | 1996-10-02 | 2000-01-31 | 日本電気株式会社 | 固体撮像素子およびその製造方法 |
JPH10332920A (ja) * | 1997-05-27 | 1998-12-18 | Sony Corp | カラー固体撮像装置のカラーフィルタの形成方法 |
KR100223826B1 (ko) * | 1997-06-04 | 1999-10-15 | 구본준 | 씨씨디(ccd) 영상소자의 제조방법 |
JP3011137B2 (ja) * | 1997-06-27 | 2000-02-21 | 日本電気株式会社 | 電荷転送装置およびその製造方法 |
KR100367501B1 (ko) * | 1998-12-30 | 2003-04-23 | 주식회사 하이닉스반도체 | 반도체소자의자기정렬적인콘택형성방법 |
-
1997
- 1997-06-27 JP JP9172387A patent/JP3011137B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-26 KR KR1019980024365A patent/KR100344685B1/ko not_active IP Right Cessation
- 1998-06-29 CN CNB981025579A patent/CN1201406C/zh not_active Expired - Fee Related
- 1998-06-29 US US09/106,005 patent/US6097044A/en not_active Expired - Lifetime
-
2000
- 2000-04-07 US US09/545,890 patent/US6380005B1/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101872776A (zh) * | 2009-04-23 | 2010-10-27 | 索尼公司 | 固态成像装置及其制造方法 |
CN101872776B (zh) * | 2009-04-23 | 2013-03-06 | 索尼公司 | 固态成像装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH1117163A (ja) | 1999-01-22 |
KR100344685B1 (ko) | 2002-09-18 |
US6380005B1 (en) | 2002-04-30 |
US6097044A (en) | 2000-08-01 |
CN1201406C (zh) | 2005-05-11 |
JP3011137B2 (ja) | 2000-02-21 |
KR19990007379A (ko) | 1999-01-25 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030910 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030910 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
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CP03 | Change of name, title or address |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Japan Kanagawa Prefecture Patentee before: NEC Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050511 Termination date: 20140629 |
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EXPY | Termination of patent right or utility model |