CN1193325C - 具有金属覆盖层的标准元件及其制造方法 - Google Patents
具有金属覆盖层的标准元件及其制造方法 Download PDFInfo
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Abstract
为了一种具有金属覆盖层(13)的标准元件(1)的标记制作,建议:在该覆盖层上至少安排另一个反差层(14),该反差层同该金属覆盖层形成一种良好的光学反差,该反差层为了制作标记可利用激光器刻蚀。
Description
技术领域
本发明涉及一种标准元件,特别是一种微型化的无源标准元件。
背景技术
为了标明电气的、电子的以及特别是无源的标准元件,通常为它们配上一种标记。这种标记可以给出关于生产厂家、标准元件的型号或规格的信息,必要时还可给出关于序号和条款说明的信息。那些较大的标准元件,具有足够大的面积用于容纳标记,它们可以为此以简单方式例如利用丝网印刷法实现印标。较小的标准元件,其尺寸例如在1mm以下的,没有足够的可印刷的面积供制作标记之用。代替印刷,这些标准元件可利用激光器制作标记,该激光器甚至能制作出最小的字体。
在微型化的标准元件上,也就是那些在其用于制作标记的表面上具有一金属层的微型化标准元件上,利用激光器制作标记的方式只能制作出难以辨认的标记,或者根本就制作不出标记来,这是因为在该处由于材料刻蚀而不可能提供足够的反差。
发明内容
因此,本发明的任务是提供一种具有特殊金属覆盖层的标准元件,在其上可实现强反差的标识;本发明还提供一种制造所述标准元件的方法。
按本发明,上述任务在标准元件方面的技术解决方案在于一种具有金属覆盖层的标准元件,其中在该金属覆盖层上安排了至少另一个金属层作为反差层,该反差层同该金属覆盖层形成一种颜色反差或反射反差,其中,在该反差层中用激光制作标记的部位被凸显出来,以及露出该部位下面的覆盖层,其中,该覆盖层和该反差层的组合包括下述层序列之一:
a)铜/镀镍/黑镍
b)镀铜/镍/黑镍
c)铜/镍(无光泽)/镍(灰色)
d)铜/铝/铝 经过阳极氧化处理的
其中,所述层序列的金属层中至少一个是该覆盖层的一部分。
上述任务在制造方法方面的技术解决方案在于包括如下步骤:
在该标准元件上涂敷一个金属覆盖层,
在涂敷该覆盖层之后直接在该覆盖层上涂敷至少一个金属反差层,
其中,该反差层是这样选择的或在这样的条件下产生出来的,即它就其光学性质而言是与该金属覆盖层不同的,
接着用激光使反差层的范围在露出覆盖层的条件下凸显出来,由此在该标准元件上形成标记,该标记与反差层的不带标记的表面形成颜色反差或反射反差。
以这样一种标准元件来说,它在可供制作标记的一个表面上具有一金属层,特别是一个覆盖层,本发明提出:在该金属层上面加设一个反差层,该反差层可利用一激光器刻蚀。这样就能实现下述目的:在利用激光制作标记的反差层上,也就是通过局部的反差层的刻蚀之后便可以简单地形成具有高度光学反差的可很好辨识的标记。
对于该反差层而言,原理上所有的层都可加以考虑,只要它们可以简单地涂敷并且具有对金属覆盖层的良好光学反差即可。可以简单涂覆的是那些特别可与标准元件的生产工艺步骤相容的反差层。特别优选的是这样的覆盖层,它们的涂敷可以在标准元件的生产过程中无接缝地实施,以及这样的覆盖层,它们特别可利用相同的装置,即在生产标准元件时为前面的工艺步骤所需的装置。
按本发明的一项有利的结构形式,该反差层直接在制取金属覆盖层之后立即生产出来,其中该反差层优选也是一种金属层,它就其光学性质而言有别于该金属覆盖层。两种金属层的差异例如可以经过金属层的反射性能来达到,这种反射性能特别取决于金属层的改进或微观结构。另一种或辅助的作法是,该反差层也可以在颜色上与金属覆盖层相区别,或者也可以为这两种金属层选用不同色的金属。
对于该反差层当然可选择其它材料,例如漆层和特别是着色的尤其是着成黑色的漆层。一般地说,如果该反差层相对于金属层具有一种不同的颜色或者特别是一种黑色的层,则是有利的。纯金属的叠加而成的组合层,在其上通过激光制作标记可产生良好的光学反差效果,而且它们可以成批地、特别可用相同的或相似的装置进行涂敷,这些组合层例如是:
a)铜/镀镍/黑镍
b)镀铜/镍/黑镍
c)铜/镍(无光泽)/镍(灰色)
d)铜/铝/铝 经过阳极氧化处理的
上述层合组还可以附加地涂敷在该金属覆盖层上。所述层序列中的一个或两个金属层当然也可以形成该覆盖层或者承担该覆盖层的功能任务。
优选的组合层是这样的组合层,它们包含一种和同一种金属的两种不同改型。这两种不同改型是特别通过不同的生产工艺条件产生的。在采用喷镀、无电流沉积或电镀沉积进行金属层涂敷时,例如可借助工艺参数或沉积条件的改变,来调节成分或相应的光学层性质。
可成批涂敷的并包含一种金属层(也可是覆盖层)的层序列,它们彼此相对地形成一种光学反差,而且它们可采用激光器制作标记或者可采用激光器进行刻蚀,这些层序列也是下列的金属/金属组合,它们通过不同的金属着色表明:
e)镍/金
f)铜/镍
g)铜/铝
h)铜/锡
i)铜/银
j)铜/金
对于上述不同着色的金属层组合,优选采用相同的沉积条件,这些金属层组合中至少该下层可以是金属覆盖层或者是金属覆盖层的一部分。尽管在这里反差可单靠不同着色的金属层或者靠激光制作标记后留下的金属层部位来产生,但除了颜色反差之外仍可制取一种反射反差。于此,若上层(反差层)反射很差,而下面的通过激光制作标记可露出的层具有良好的反射性质,则这是可取的。
为涂敷一种由漆和特别是由黑漆形成的反差层,一种电泳法也是适用的。对于这种反差层,有一系列不同的漆都合适,对它们的材料或成分除反差外不会提出什么要求或者要求很少。当然还有这种可能,就是印上、滴上或浇上一个包含漆的反差层。
在下述标准元件方面可有利地使用本发明,这些标准元件具有或需要一个金属覆盖层作为功能层。这样一种金属覆盖层例如可以是一个金属覆盖罩。但该金属覆盖层也可以是一个金属壳,或者金属壳的一部分,其中可安置任意的标准元件。金属覆盖层也特别可用作为对电磁辐射的屏蔽层。这种屏蔽可能是必需的,以便防止电磁辐射从标准元件本身辐射出来。当然,一个标准元件可以是这样的,即它具有一个金属覆盖层,该覆盖层用来屏蔽从外面发生作用的电磁辐射,尤其是如果该标准元件是对电磁辐射敏感时。因此,该标准元件优选是高频作业的标准元件,特别是用于HF(高频)范围的表面波标准元件。
附图说明
下面将参照一个实施例和所属的两个附图,对本发明做更详细的说明。
图1以示意横断面图表示置于一个载体上的具多层金属涂层的标准元件,
图2以示意横断面图表示一个在多层金属涂层中产生的标记。
具体实施方式
图1:本发明优选用于表面波标准元件,特别是表面波滤波器,这些滤波器按倒装接合工艺置于基板2上。于此,承载着有源标准元件结构6的压电标准元件基片1,经过合适的焊接点5特别是经过凸点,面朝下(头朝下)地与基板2相连,所以标准元件基片和基板之间的标准元件结构是离基板净间距地受到保护布置的。在此情况下,优选是将多个标准元件安置在一个基板上,只有在完成所有覆盖层之后才加以分散。此外,如图所示,有源的标准元件结构6还可以由一个覆盖罩7覆盖,这种覆盖罩是按照专利申请人称之为保护层的集成法直接在标准元件基片1的表面上制作出来的。覆盖罩在标准元件结构6上保留一个净空腔,该空腔在工艺处理过程中机械地保护这些标准元件结构。
凸点5将基片1上的连接垫片9同基板2上的下凸点金属涂层连接起来,上述连接垫片是同有源的标准元件结构6导电地相连的。在基板中的敷镀通孔3上建立了一种向着基板2的底侧上的连接金属涂层10的导电性连通,利用这种连通,该标准元件可以同一个例如在一印刷电路板上或一模块上制作出的线路按表面贴装结构方式相连。该基板是用塑料或陶瓷并且优选是双层构成的。这一情况在两个层之间建立了一个金属化平面,使得导体线路可以无交叉地被引导。此外,这一点允许侧向相对地错开的敷镀通孔3,即与直线相反地通过基板2引导的敷镀通孔可以严密地制作出来。
为了对电磁辐射实现屏蔽,在标准元件基片的背面上如此涂敷一个在这里包含多个层11、12、13、14的金属层,使得它与基板2相隔绝,从而将整个标准元件密封起来。为此,可以在前一步骤中安排一下填充物15作为密封体,该密封体呈环形围绕着标准元件基片1,并且至少在标准元件基片的外部区域封闭标准元件基片1和基板2之间的自由空间(参见图1)。下填充物15可以通过一种液态密封物质特别是一种漆或树脂的涂敷和硬化来实现。当然还有这样的可能性,就是为了密封目的,在标准元件和基板上敷上一层紧贴的塑料膜、金属膜或层压膜(未在图中未出)。
在标准元件基片1上或者必要时在用薄膜作的密封体上,可以涂敷金属覆盖层。这例如可用金属薄膜的形式来实现。但该金属层也可以是一种多层层压膜的最外一层,该层压膜被用来密封该标准元件。当然也还有这样的可能性,就是通过金属喷镀和继之以电镀增厚的方式来产生金属覆盖层。这一措施具有下述优点:用同一方式随即便可制出反差层,优选作为另一金属层。
为此,首先将待喷镀金属的表面(基片1的背面,下填充物15的表面,基板2的靠近所放置的基片1的自由表面)加以活化处理,例如用PdCl2溶剂在稍微提高的温度下进行。在如此被活化了的表面上,无电流地沉积出一个化学金属涂层作为第一层,例如在一强碱性化学铜浴中沉积的一个大约2-3μm厚的铜层11。
随后,铜层11以电镀法增厚,例如在室温条件下在一酸性铜浴中以另一个铜层12增厚。作为其上的钝化层,在一酸性的无光泽镍浴中沉积出一个镍层13,该镍层是此后制造标记的反差所用的一个部分层。作为其上所属的反差层,在一酸性黑镍浴中沉积出一个约0.3μm的薄黑镍层。
图2:通过利用激光器例如NdYAG激光器进行有选择的照射,便可有选择地除去反差层14的一部分,这一过程受到暗的黑镍层的高吸收能力的支持。在如此显露出来的范围中,发金属光泽的镍层13的表面显现出来,并与黑镍层14的留下的层部位形成一个可良好辨认的反差。
如所描述的,本发明可有利地用于这类标准元件,它们按照由申请人称之为CSSP法(芯片尺寸表面声波封装法)的方法加以涂敷和包覆。利用倒装工艺置于基板2上的标准元件基片1与传统的技术不同,其所具有的尺寸基本上和基板2相等,因而可实现标准元件或标准元件封装进一步微型化。多个共同置于一个基板2上的并按本发明加以覆盖的标准元件随即加以分离开,例如在焊接的标准元件基片之间的一个分离点16处进行锯切(见图1)。
不言而喻,本发明并不局限于在表面声波标准元件方面的应用。本发明可优选用于微型化的标准元件,这类微型化的标准元件由于可供使用的表面很小而不能用印刷法实现传统的标记,而且在这类标准元件上由于金属覆盖层而不能实现直接的激光制作标记或者只能产生具有劣质反差的标记。
Claims (13)
1.具有金属覆盖层(11,12,13)的标准元件,其中在该金属覆盖层上安排了至少另一个金属层作为反差层(14),该反差层同该金属覆盖层形成一种颜色反差或反射反差,其中,在该反差层(14)中用激光制作标记的部位(17)被凸显出来,以及露出该部位下面的覆盖层(15),其中,该覆盖层(13)和该反差层(14)的组合包括下述层序列之一:
a)铜/镀镍/黑镍
b)镀铜/镍/黑镍
c)铜/镍(无光泽)/镍(灰色)
d)铜/铝/铝 经过阳极氧化处理的
其中,所述层序列的金属层中至少一个是该覆盖层的一部分。
2.具有金属覆盖层(11,12,13)的标准元件,其中在该金属覆盖层上安排了至少另一个金属层作为反差层(14),该反差层同该金属覆盖层形成一种颜色反差或反射反差,其中,为了形成反差大的用激光制作的标记,在露出该覆盖层(13)的条件下,部该反差层(14)的部位(17)被凸显出来,其中,将覆盖层(13)做成一个反射层,而将反差层(14)做成一个无光泽的层,或者反之而获得该反射反差。
3.具有金属覆盖层(11,12,13)的标准元件,其中在该金属覆盖层上安排了一个黑镍层作为反差层(14),该反差层同该金属覆盖层形成一种颜色反差或反射反差,其中,为了形成反差大的用激光制作的标记,在露出该覆盖层(13)的条件下,该反差层(14)的部位(17)被凸显出来。
4.具有金属覆盖层(11,12,13)的标准元件,其中在该金属覆盖层上安排了一个金属反差层(14),该反差层同该金属覆盖层形成一种颜色反差或反射反差,其中,为了形成可见的反差大的用激光制作的标记,在露出该覆盖层(13)的条件下,该反差层(14)的部位(17)被凸显出来,其中,由覆盖层(13)和反差层(14)所成的组合包含下列材料组合中的一个:Ni/Au;Cu/Al;Cu/Sn;Cu/Au。
5.按权利要求1-3中之一所述的标准元件,其中设有表面波标准元件,以及金属覆盖层由高频屏蔽材料制成。
6.按权利要求5所述的标准元件,其中,该标准元件具有一芯片,该芯片按倒装接合结构被固定在一个基板(2)上,该标准元件的结构被设置在该芯片的朝向该基板(2)的表面上,其中金属覆盖层(13)被涂敷在该芯片的背面,该芯片严密地对基板(2)封闭。
7.用于制造具有标记的标准元件的方法,包括如下步骤:
在一待制作标记的标准元件上涂敷一个金属覆盖层,
在涂敷该覆盖层之后直接在该覆盖层上涂敷至少一个金属反差层,
其中,该反差层是这样选择的或在这样的条件下产生出来的,即它就其光学性质而言是与该金属覆盖层不同的,
接着用激光使反差层的范围在露出覆盖层的条件下凸显出来,由此在该待制作标记的标准元件上形成标记,该标记与反差层的不带标记的表面形成颜色反差或反射反差。
8.按权利要求7所述的方法,其中,该覆盖层和该反差层的涂敷是通过无电流的或电镀的沉积法来实现的。
9.按权利要求7所述的方法,其中,该金属层的涂敷都是通过喷镀法来实现的。
10.按权利要求8或9所述的方法,其中,该覆盖层和该反差层的相应不同光学层性质是通过加工参数或沉积条件的改变来调定的。
11.按权利要求8或9所述的方法,其中,该覆盖层和该反差层的不同成分是通过加工参数或沉积条件的改变来调定的。
12.按权利要求7所述的方法,其中,该覆盖层和该反差层包含下列具有不同金属着色的层序列之一;该各层序列是系列涂敷的:
e)镍/金
f)铜/镍
g)铜/铝
h)铜/锡
i)铜/银
13.按权利要求7所述的用于制作如权利要求1所述标准元件的方法,其中,下列层组合中的每一个都是彼此相叠地产生的:
a)铜/镀镍/黑镍
b)镀铜/镍/黑镍
c)铜/镍(无光泽)/镍(灰色)
d)铜/铝/铝 经过阳极氧化处理的
其中,上述层组合是作为反差层涂敷在该金属覆盖层上的,或者所述层序列的金属层中至少一个是该覆盖层的一部分。
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DE10164502B4 (de) * | 2001-12-28 | 2013-07-04 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelements |
DE10300958A1 (de) * | 2003-01-13 | 2004-07-22 | Epcos Ag | Modul mit Verkapselung |
FR2849949B1 (fr) * | 2003-01-13 | 2006-11-03 | Marc Degand | Plaque d'identification inalterable |
DE10329329B4 (de) * | 2003-06-30 | 2005-08-18 | Siemens Ag | Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung |
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DE102005007608B4 (de) * | 2005-02-18 | 2017-09-21 | Epcos Ag | Anordnung aufweisend einen Kondensator und eine Schablone |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
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DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
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DE102005053765B4 (de) * | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102005053767B4 (de) * | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
DE102006019118B4 (de) | 2006-04-25 | 2011-08-18 | Epcos Ag, 81669 | Bauelement mit optischer Markierung und Verfahren zur Herstellung |
US7615404B2 (en) * | 2006-10-31 | 2009-11-10 | Intel Corporation | High-contrast laser mark on substrate surfaces |
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JP4709463B2 (ja) | 2011-06-22 |
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EP1269450B1 (de) | 2009-01-28 |
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