CN1186683C - 显示装置及其制造方法 - Google Patents
显示装置及其制造方法 Download PDFInfo
- Publication number
- CN1186683C CN1186683C CNB008018588A CN00801858A CN1186683C CN 1186683 C CN1186683 C CN 1186683C CN B008018588 A CNB008018588 A CN B008018588A CN 00801858 A CN00801858 A CN 00801858A CN 1186683 C CN1186683 C CN 1186683C
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- route bus
- display device
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- Expired - Lifetime
Links
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP254389/1999 | 1999-09-08 | ||
JP25438999 | 1999-09-08 | ||
JP25930499 | 1999-09-13 | ||
JP259304/1999 | 1999-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1321261A CN1321261A (zh) | 2001-11-07 |
CN1186683C true CN1186683C (zh) | 2005-01-26 |
Family
ID=26541664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008018588A Expired - Lifetime CN1186683C (zh) | 1999-09-08 | 2000-08-31 | 显示装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6961111B1 (zh) |
KR (1) | KR20010080327A (zh) |
CN (1) | CN1186683C (zh) |
TW (1) | TWI285782B (zh) |
WO (1) | WO2001018596A1 (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100635042B1 (ko) * | 2001-12-14 | 2006-10-17 | 삼성에스디아이 주식회사 | 전면전극을 구비한 평판표시장치 및 그의 제조방법 |
JP3871932B2 (ja) | 2001-12-28 | 2007-01-24 | シャープ株式会社 | 表示装置およびバックライト装置 |
US7038377B2 (en) | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
JP4007074B2 (ja) * | 2002-05-31 | 2007-11-14 | ソニー株式会社 | 表示装置の製造方法 |
EP1437683B1 (en) * | 2002-12-27 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | IC card and booking account system using the IC card |
US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
KR100531410B1 (ko) * | 2003-04-15 | 2005-11-28 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치의 어레이 기판 및 그의 제조 방법 |
US7192859B2 (en) * | 2003-05-16 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device and display device |
JP2004349513A (ja) * | 2003-05-22 | 2004-12-09 | Seiko Epson Corp | 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器 |
TWI302625B (en) | 2003-06-26 | 2008-11-01 | Au Optronics Corp | Polysilicon thin film transistor liquid crystal display having a plurality of common voltage drivers |
CN100395589C (zh) * | 2003-07-14 | 2008-06-18 | 友达光电股份有限公司 | 具有多个公共电压驱动电路的液晶显示器 |
US7566001B2 (en) | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
US7453531B2 (en) * | 2003-11-22 | 2008-11-18 | Lg Display Co., Ltd. | LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device |
JP4376597B2 (ja) * | 2003-11-26 | 2009-12-02 | 日立プラズマディスプレイ株式会社 | フラットパネルディスプレイ |
US7177064B2 (en) * | 2004-06-11 | 2007-02-13 | Lg Chem, Ltd. | Display device using printed circuit board as substrate of display panel |
JP4275644B2 (ja) * | 2004-06-23 | 2009-06-10 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法、並びに電子装置 |
KR100696579B1 (ko) * | 2005-06-15 | 2007-03-20 | 엘지전자 주식회사 | 유기 전계 발광 소자 |
KR101116824B1 (ko) * | 2005-07-08 | 2012-02-29 | 엘지디스플레이 주식회사 | 절연층의 필링을 방지하는 유기 전계 발광 소자 |
CN101258580B (zh) * | 2005-09-05 | 2010-05-19 | 夏普株式会社 | 半导体装置及其制造方法和显示装置 |
JP5216204B2 (ja) | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
WO2008114404A1 (ja) * | 2007-03-20 | 2008-09-25 | Fujitsu Limited | 積層型表示素子及びその製造方法 |
JP5138428B2 (ja) * | 2008-03-07 | 2013-02-06 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
JP2011252935A (ja) * | 2008-09-26 | 2011-12-15 | Sharp Corp | 回路基板及び表示装置 |
JP5308145B2 (ja) * | 2008-12-19 | 2013-10-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5293267B2 (ja) * | 2009-02-26 | 2013-09-18 | 株式会社リコー | 表示装置 |
US8698391B2 (en) * | 2009-04-29 | 2014-04-15 | Global Oled Technology Llc | Chiplet display with oriented chiplets and busses |
JP6042187B2 (ja) | 2012-11-30 | 2016-12-14 | 株式会社ジャパンディスプレイ | Oled表示装置 |
US9633883B2 (en) | 2015-03-20 | 2017-04-25 | Rohinni, LLC | Apparatus for transfer of semiconductor devices |
KR102432645B1 (ko) * | 2015-06-18 | 2022-08-17 | 삼성디스플레이 주식회사 | 표시장치 및 이의 제조방법 |
CN106569637B (zh) * | 2016-10-27 | 2019-02-26 | 广东星弛光电科技有限公司 | 一种高硬度防指纹超窄边框手机触摸屏的制备工艺 |
US10141215B2 (en) | 2016-11-03 | 2018-11-27 | Rohinni, LLC | Compliant needle for direct transfer of semiconductor devices |
US10504767B2 (en) | 2016-11-23 | 2019-12-10 | Rohinni, LLC | Direct transfer apparatus for a pattern array of semiconductor device die |
US10471545B2 (en) | 2016-11-23 | 2019-11-12 | Rohinni, LLC | Top-side laser for direct transfer of semiconductor devices |
US10062588B2 (en) | 2017-01-18 | 2018-08-28 | Rohinni, LLC | Flexible support substrate for transfer of semiconductor devices |
CN111902855B (zh) * | 2018-03-26 | 2022-02-18 | 夏普株式会社 | 显示装置的制造方法以及显示装置 |
US10410905B1 (en) | 2018-05-12 | 2019-09-10 | Rohinni, LLC | Method and apparatus for direct transfer of multiple semiconductor devices |
JP7202118B2 (ja) | 2018-09-26 | 2023-01-11 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
US11094571B2 (en) | 2018-09-28 | 2021-08-17 | Rohinni, LLC | Apparatus to increase transferspeed of semiconductor devices with micro-adjustment |
KR20200057855A (ko) * | 2018-11-16 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN115035811B (zh) * | 2022-05-23 | 2023-12-12 | 广州新视界光电科技有限公司 | 一种led显示面板及其制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6126025A (ja) | 1984-07-17 | 1986-02-05 | Hitachi Ltd | 液晶表示装置 |
JPS62119936A (ja) * | 1985-11-19 | 1987-06-01 | Fujitsu Ltd | コンプリメンタリ−lsiチツプ |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH0398082A (ja) * | 1989-09-11 | 1991-04-23 | Nec Corp | 液晶表示パネル |
JPH043552A (ja) | 1990-04-19 | 1992-01-08 | Kyocera Corp | Gmsk変調波の符号識別再生装置 |
JPH0414022A (ja) | 1990-05-08 | 1992-01-20 | Sharp Corp | 液晶表示装置 |
JP3009928B2 (ja) | 1991-01-10 | 2000-02-14 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JP3101077B2 (ja) * | 1992-06-11 | 2000-10-23 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH06163583A (ja) | 1992-11-16 | 1994-06-10 | Nippon Sheet Glass Co Ltd | 薄膜トランジスタアレイの製造方法 |
JP3366482B2 (ja) * | 1995-03-13 | 2003-01-14 | 株式会社日立製作所 | フリップチップ方式の液晶表示素子及び液晶表示モジュール |
JPH10133216A (ja) * | 1996-11-01 | 1998-05-22 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
JP3647542B2 (ja) * | 1996-02-20 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3332773B2 (ja) | 1996-03-15 | 2002-10-07 | シャープ株式会社 | アクティブマトリクス基板およびアクティブマトリクス基板の製造方法 |
JPH09274195A (ja) | 1996-04-04 | 1997-10-21 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
JPH10268343A (ja) * | 1997-03-24 | 1998-10-09 | Sharp Corp | 液晶表示装置およびその製造方法 |
JP3980156B2 (ja) * | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
-
2000
- 2000-08-31 KR KR1020017005159A patent/KR20010080327A/ko not_active Application Discontinuation
- 2000-08-31 WO PCT/JP2000/005945 patent/WO2001018596A1/ja active Application Filing
- 2000-08-31 CN CNB008018588A patent/CN1186683C/zh not_active Expired - Lifetime
- 2000-08-31 TW TW089117810A patent/TWI285782B/zh not_active IP Right Cessation
- 2000-08-31 US US09/831,315 patent/US6961111B1/en not_active Expired - Lifetime
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WO2001018596A1 (fr) | 2001-03-15 |
TWI285782B (en) | 2007-08-21 |
KR20010080327A (ko) | 2001-08-22 |
US6961111B1 (en) | 2005-11-01 |
CN1321261A (zh) | 2001-11-07 |
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