CN117690984A - Electronic passivation contact structure, preparation method thereof and solar cell - Google Patents
Electronic passivation contact structure, preparation method thereof and solar cell Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 111
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims abstract description 84
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses an electronic passivation contact structure and a preparation method thereof as well as a solar cell, wherein the electronic passivation contact structure is positioned on a light receiving surface of a silicon substrate, the electronic passivation contact structure comprises an aluminum doped neodymium oxide layer and a transparent conductive layer which are laminated on the light receiving surface of the silicon substrate, or the electronic passivation contact structure is positioned on a backlight surface of the silicon substrate, and the electronic passivation contact structure comprises an aluminum doped neodymium oxide layer and a metal electrode layer which are laminated on the backlight surface of the silicon substrate, wherein the ratio of the doping quality of aluminum to the quality of neodymium is (1-5): 100. The solar cell is a crystalline silicon solar cell, or a perovskite-crystalline silicon stacked solar cell. The invention is based on the metal compound AlNdO X As an electron passivation contact layer, the optical parasitic absorption can be reduced, the problem of short-circuit current density loss caused by light absorption caused by passivation contact of a doped silicon film can be effectively avoided, and meanwhile, the surface passivation performance and the selective transmission performance on electrons can be improved through Al doping.
Description
Technical Field
The invention belongs to the technical field of solar energy, and particularly relates to an electronic passivation contact structure, a preparation method thereof and a solar cell.
Background
The crystalline silicon solar cell occupies most of the photovoltaic market worldwide due to the advantages of high stability, reliability, abundant raw materials, low cost and the like. Further improvement in PERC cell efficiency, which is still a major market share at present, is mainly limited by high carrier recombination losses at the crystalline silicon-electrode contact. The passivation contact technology is an important technical route for improving efficiency and reducing cost of the crystalline silicon battery after PERC, and the passivation contact has excellent passivation effect on contact and non-contact interfaces and selective carrier transmission characteristics, and can greatly improve open-circuit voltage Voc, filling factor FF and conversion efficiency eta of the crystalline silicon battery. In addition, the passivation contact technology omits the process steps of high-temperature doping, laser grooving and the like, and the carriers are collected in one dimension, so that the preparation process of the battery is simplified, and the carrier collection efficiency is improved. From the development route diagram of the crystalline silicon battery, the conversion efficiency of the passivation contact crystalline silicon battery can reach more than 26%, and the passivation contact crystalline silicon battery is the first choice of the next-generation high-efficiency battery after the PERC battery.
Passivation contactThe technology is divided into two types, namely passivation contact based on doped silicon film and undoped passivation contact based on metal compound. SHJ cells and TOPCO cells are the most successful applications of the current passivation contact technology, both of which use doped silicon films to construct passivation contacts, where SHJ consists of a layer of a-Si to H (i) (intrinsic hydrogenated amorphous silicon) overlaid with a layer of doped a-Si to H (hydrogenated amorphous silicon), TOPCO consists of a tunneling oxide layer (SiO 2 ) And superposing a layer of doped microcrystalline silicon (poly-Si).
The disadvantages of the prior art are:
first, the main problem of passivation contacts (SHJ and TOPCon) based on doped silicon films is that the parasitic light absorption of the thin film silicon is large, resulting in low short-circuit current Jsc of the photovoltaic device, so IBC structures are used in the world efficiency recording cells.
Second, thin film silicon deposition equipment is expensive (PECVD/LPCVD) and involves toxic, flammable gases (e.g., silanes, phosphanes, and boranes).
In addition, the SHJ technology has narrow process window, poor thermal stability (250 ℃), and the low-temperature silver paste used has high price and poor tensile force; TOPCon structure annealing temperature is high (800-1000 ℃), process steps are more, so that the chip rate in the production process is higher, and further the use of thin silicon chips is limited.
Accordingly, in view of the above technical problems, it is necessary to provide an electronic passivation contact structure, a method for manufacturing the same, and a solar cell.
Disclosure of Invention
Accordingly, the present invention is directed to an electronic passivation contact structure, a method for manufacturing the same, and a solar cell, so as to reduce parasitic light absorption and increase short-circuit current Jsc of the cell.
In order to achieve the above object, an embodiment of the present invention provides the following technical solution:
the electronic passivation contact structure is positioned on the light receiving surface of the silicon substrate and comprises an aluminum doped neodymium oxide layer and a transparent conductive layer which are laminated on the light receiving surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
In one embodiment, the thickness of the aluminum doped neodymium oxide layer is 1 nm-30 nm; and/or the number of the groups of groups,
the silicon substrate is an N-type crystal silicon substrate.
In one embodiment, a first passivation interlayer is laminated between the light-receiving surface of the silicon substrate and the aluminum-doped neodymium oxide layer, and the first passivation interlayer is SiO 2 Layer, hydrogenated amorphous silicon, tiO 2 A combination of one or more of the layers.
In an embodiment, the transparent conductive layer is an intrinsic ZnO-based transparent conductive layer or a doped ZnO-based transparent conductive layer, and the doping element in the doped ZnO-based transparent conductive layer is one or more of hydrogen, boron, aluminum, gallium and indium.
The technical scheme provided by the other embodiment of the invention is as follows:
the electronic passivation contact structure is positioned on the backlight surface of the silicon substrate and comprises an aluminum doped neodymium oxide layer and a metal electrode layer which are laminated on the backlight surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
In one embodiment, the thickness of the aluminum doped neodymium oxide layer is 1 nm-30 nm; and/or the number of the groups of groups,
the silicon substrate is an N-type crystal silicon substrate.
In one embodiment, a second passivation interlayer is laminated between the back surface of the silicon substrate and the aluminum doped neodymium oxide layer, and the second passivation interlayer is SiO 2 Layer, hydrogenated amorphous silicon, tiO 2 A combination of one or more of the layers.
The technical scheme provided by the invention is as follows:
the electronic passivation contact structure is positioned on the light receiving surface of the conductive glass substrate and comprises an aluminum doped neodymium oxide layer laminated on the light receiving surface of the conductive glass substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
The technical scheme provided by the invention is as follows:
a method of making an electronically passivated contact structure, the method comprising:
providing a substrate;
preparing an aluminum doped neodymium oxide layer on a light receiving surface or a back surface of a substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5) 100;
the preparation of the aluminum doped neodymium oxide layer comprises the following steps:
preparation of AlO from aluminum precursor based on atomic layer deposition process X ；
Preparation of NdO from neodymium precursor based on atomic layer deposition process X ；
Based on atomic layer deposition process, with AlO X And NdO X Circularly preparing aluminum doped neodymium oxide layer and AlO X And NdO X The cycle ratio of (2) is 1: (20-200).
A further embodiment of the present invention provides the following technical solution:
the solar cell is a crystalline silicon solar cell, a perovskite solar cell or a perovskite-crystalline silicon laminated solar cell, the crystalline silicon solar cell comprises the electronic passivation contact structure, and the perovskite solar cell or the perovskite-crystalline silicon laminated solar cell comprises the electronic passivation contact structure.
The invention has the following beneficial effects:
the invention is based on the metal compound AlNdO X As an electron passivation contact layer, the optical parasitic absorption can be reduced, the problem of short-circuit current density loss caused by light absorption caused by passivation contact of a doped silicon film can be effectively avoided, and meanwhile, the surface passivation performance and the selective transmission performance on electrons can be improved through Al doping.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an electronic passivation contact structure in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of an electronic passivation contact structure in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of an electronic passivation contact structure in embodiment 3 of the present invention;
fig. 4 is a schematic structural diagram of an electronic passivation contact structure in embodiment 4 of the present invention;
fig. 5 is a schematic structural diagram of a solar cell in embodiment 6 of the present invention;
fig. 6 is a schematic structural diagram of a solar cell in embodiment 7 of the present invention;
fig. 7 is a schematic structural diagram of a solar cell in embodiment 8 of the present invention;
fig. 8 is a schematic structural diagram of a solar cell in embodiment 9 of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
The invention discloses an electronic passivation contact structure which is positioned on a light receiving surface of a silicon substrate and comprises an aluminum doped neodymium oxide layer and a transparent conductive layer which are laminated on the light receiving surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
The invention also discloses an electronic passivation contact structure which is positioned on the backlight surface of the silicon substrate and comprises an aluminum doped neodymium oxide layer and a metal electrode layer which are laminated on the backlight surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
The invention also discloses an electronic passivation contact structure which is positioned on the light receiving surface of the conductive glass substrate and comprises an aluminum doped neodymium oxide layer laminated on the light receiving surface of the conductive glass substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
The invention also discloses a preparation method of the electronic passivation contact structure, which comprises the following steps:
providing a substrate;
an aluminum-doped neodymium oxide layer is prepared on the light-receiving surface or the back surface of the substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
The invention also discloses a solar cell which is a crystalline silicon solar cell, a perovskite solar cell or a perovskite-crystalline silicon laminated solar cell.
The invention is further illustrated below with reference to specific examples.
Example 1:
referring to FIG. 1, a schematic structure of an electronic passivation contact structure in this embodiment is shown, in this embodiment, the electronic passivation contact structure is n-Si/AlNdO X The transparent conductive layer structure is located on the light receiving surface (i.e. the upper surface or the front surface) of the silicon substrate 10, and the silicon substrate is an N-type crystalline silicon substrate.
Specifically, the electronic passivation contact structure in the present embodiment includes AlNdO laminated on the light-receiving surface of the silicon substrate 10 X (aluminum doped neodymium oxide) layer 211 and transparent conductiveLayer 212.
Wherein AlNdO X The thickness of the layer 211 is 1nm to 100nm, preferably 1nm to 30nm, and the ratio of the doping mass of aluminum to the mass of neodymium is (1 to 5): 100; the transparent conductive layer 212 is an intrinsic ZnO-based transparent conductive layer or a doped ZnO-based transparent conductive layer, and the doping element in the doped ZnO-based transparent conductive layer is one or more of hydrogen, boron, aluminum, gallium, indium, and the like.
Example 2:
referring to FIG. 2, a schematic structure of an electronic passivation contact structure in this embodiment is shown, in this embodiment, the electronic passivation contact structure is n-Si/passivation intercalation/AlNdO X The transparent conductive layer structure is located on the light receiving surface (i.e. the upper surface or the front surface) of the silicon substrate 10, and the silicon substrate is an N-type crystalline silicon substrate.
Specifically, the electronic passivation contact structure in this embodiment includes a first passivation interlayer 213 and AlNdO laminated on the light receiving surface of the silicon substrate 10 X (aluminum doped neodymium oxide) layer 211 and transparent conductive layer 212.
Wherein AlNdO X The layer 211 and the transparent conductive layer 212 are identical to those of embodiment 1, and will not be described here again.
The first passivation interlayer 213 in this embodiment is SiO 2 Layer, hydrogenated amorphous silicon (a-Si: H), tiO 2 A combination of one or more of the layers, etc.
Example 3:
referring to FIG. 3, a schematic structure of an electronic passivation contact structure in this embodiment is shown, in which the electronic passivation contact structure is n-Si/AlNdO X The metal electrode structure is located on the backlight surface (i.e. the lower surface or the back surface) of the silicon substrate 10, which is an N-type crystalline silicon substrate.
Specifically, the electronic passivation contact structure in the present embodiment includes AlNdO laminated on the back surface of the silicon substrate 10 X (aluminum doped neodymium oxide) layer 221 and metal electrode layer 222.
Wherein AlNdO X The thickness of the layer 211 is 1nm to 100nm, preferably 1nm to 30nm, and the ratio of the doping mass of aluminum to the mass of neodymium is (1 to 5): 100; the metal electrode layer 222 may be an Ag electrode, an Ag/Al electrode, or the like.
Example 4:
referring to FIG. 4, a schematic structure of an electronic passivation contact structure in this embodiment is shown, in which the electronic passivation contact structure is n-Si/passivation intercalation/AlNdO X The metal electrode structure is located on the backlight surface (i.e. the lower surface or the back surface) of the silicon substrate 10, which is an N-type crystalline silicon substrate.
Specifically, the electronic passivation contact structure in this embodiment includes a second passivation interlayer 223, alNdO, laminated on the back surface of the silicon substrate 10 X (aluminum doped neodymium oxide) layer 221 and metal electrode layer 222.
Wherein AlNdO X The layer 221 and the metal electrode layer 222 are identical to those of embodiment 3, and will not be described here again.
The second passivation interlayer 223 in this embodiment is SiO 2 Layer, hydrogenated amorphous silicon (a-Si: H), tiO 2 A combination of one or more of the layers, etc.
Example 5:
the preparation method of the electronic passivation contact structure in the embodiment comprises the following steps:
providing a silicon substrate;
preparation of aluminum doped Neodymium oxide (AlNdO) on the light-receiving or backlight side of a silicon substrate X ) A layer.
Wherein AlNdO X The layer is made of AlO X And NdO X Prepared by an ALD (atomic layer deposition) super-cycle method, and specifically comprises the following steps:
preparation of AlO from aluminum precursor based on atomic layer deposition process X ；
Preparation of NdO from neodymium precursor based on atomic layer deposition process X ；
Based on atomic layer deposition process, with AlO X And NdO X Circularly preparing aluminum doped neodymium oxide layer and AlO X And NdO X The cycle ratio of (2) is 1: (20-200).
In this embodiment, the aluminum doped neodymium oxide layer is circularly prepared by an atomic layer deposition process, and compared with the aluminum doped neodymium oxide layer prepared by a thermal evaporation process, the aluminum doped neodymium oxide layer has higher hydrogen content and can have a better passivation effect.
Based on the electronic passivation contact structure and the preparation method thereof in the above embodiments, the following embodiments provide application of the electronic passivation contact structure to specific crystalline silicon solar cells, and provide structural features of solar cells having the electronic passivation contact structure and the preparation method thereof. In summary, the main feature of the crystalline silicon solar cell structure is that the electronic passivation contact structure is applied to the negative electrode of the crystalline silicon solar cell for collecting electrons, and the positive electrode structure design of the cell for collecting holes can be compatible with the positive electrode structure design of most crystalline silicon solar cells at present.
Based on this, the crystalline silicon cell structure presented by the present invention can be divided into two categories: the first type applies an electronic passivation contact structure to the backlight surface of a crystalline silicon cell; the second type applies an electronic passivation contact structure to the light-receiving surface of the crystalline silicon cell. Based on the advantages of high transparency and low parasitic absorption of the electronic passivation contact structure, the electronic passivation contact structure is preferably applied to the light receiving surface of the crystalline silicon cell.
Example 6:
referring to FIG. 5, a schematic structure of a solar cell in this embodiment is shown, which includes a silicon substrate 10 having a light receiving surface (i.e. front surface) with a structure in a PERC cell including a P-type doped emitter 31, a tunnel oxide layer 32, a passivation layer 33, an anti-reflection layer 34 and a first electrode 35 stacked in order, and a backlight surface (i.e. back surface) with an electronic passivation contact structure in embodiment 4 including a second passivation interlayer 223, alNdO stacked in order X (aluminum doped neodymium oxide) layer 221 and metal electrode layer 222.
Specifically, the tunnel oxide layer 32 and the second passivation interlayer 223 are both SiO 2 A passivation layer 33 of Al 2 O 3 A layer of SiN as an anti-reflection layer 34 X The first electrode 35 is a gate-line silver electrode, and the metal electrode layer 222 is an Al electrode.
The preparation method of the crystalline silicon solar cell in the embodiment is as follows:
1. selecting an N-type crystalline silicon substrate, adopting 10% (wt) NaOH aqueous solution to etch and remove a surface damage layer, then utilizing 2% (wt) NaOH solution to prepare a pyramid suede structure, and then adopting an RCA method to clean a silicon wafer to obtain the N-type silicon substrate;
2. placing a silicon substrate in a tube furnace, and performing boron diffusion to prepare a P-type doped emitter, wherein the diffusion temperature is 900 ℃, and the square resistance is about 100 ohm/sq;
3. removing borosilicate glass on the surface by adopting a diluted hydrofluoric acid solution, and removing the P-type doped emitter and pyramid suede structure on the back surface by utilizing single-sided alkali polishing;
4. SiO is oxidized on two sides of the silicon wafer by utilizing an ultraviolet ozone oxidation method 2 Tunneling the passivation layer with the thickness of 1.5nm, the temperature of room temperature and the oxidation time of 15min;
5. deposition of Al on front side using ALD process 2 O 3 A passivation layer with the thickness of 10nm and the deposition temperature of 200 ℃;
6. preparation of AlNdO on the backside by ALD supercirculation X (aluminum doped neodymium oxide) layer, alO X And NdO X The circulation ratio of (2) is 1:50, the deposition temperature is 300 ℃, and the thickness is 3nm;
7. deposition of SiN on front side using PECVD process X An anti-reflection layer with the thickness of 65nm and the deposition temperature of 400 ℃;
8. preparing an Al electrode on the back surface by thermal evaporation, preparing an Ag electrode on the front surface by screen printing, and designing a grid-line-shaped distributed electrode pattern;
9. high-temperature sintering in a belt sintering furnace, forming ohmic contact on the back for electronic collection, and burning through Al by silver paste on the front 2 O 3 /SiN X An ohmic contact is formed with the P-doped emitter 31 for hole collection.
Thus, a crystalline silicon solar cell with an electronically passivated contact structure is formed.
The thinner AlNdO in this structure compared to the use of a polysilicon passivation layer in a TOPCon cell X The layer can reduce parasitic light absorption, and increase short-circuit current Jsc by 0.2mA/cm 2 ～0.5mA/cm 2 The conversion efficiency can be improved by 0.1 to 0.5 percent.
Example 7:
referring to FIG. 6, a schematic structure of a solar cell of the present embodiment is shown, which includes a silicon substrate 10, a back light surface (i.e. a back surface)) An a-Si H/a-Si H (P) hole passivation contact structure based on SHJ structure is adopted, which comprises an intrinsic hydrogenated amorphous silicon layer (a-Si H (i)) 41, a P-doped hydrogenated amorphous silicon layer (a-Si H (P)) 42, an ITO transparent conductive layer 43 and a first electrode 44 which are sequentially stacked, the light receiving surface (i.e. the front surface) of the silicon substrate adopts the electronic passivation contact structure in the embodiment 2, and comprises a first passivation insert layer 213 and AlNdO which are sequentially stacked X An (aluminum doped neodymium oxide) layer 211, a transparent conductive layer 212, and a second electrode 45.
Specifically, the first passivation interlayer 213 is a-Si: H (i) intrinsic hydrogenated amorphous silicon, the transparent conductive layer 212 is an AZO transparent conductive layer, and the first electrode 44 and the second electrode 45 are Ag electrodes.
The preparation method of the crystalline silicon solar cell in the embodiment is as follows:
1. selecting an N-type crystalline silicon substrate, adopting 10% (wt) NaOH aqueous solution to etch and remove a surface damage layer, then utilizing 2% (wt) NaOH solution to prepare a pyramid suede structure, and then adopting an RCA method to clean a silicon wafer to obtain the N-type silicon substrate;
2. respectively depositing a-Si H (i) passivation layers on the front side and the back side of the N-type silicon substrate by adopting a PECVD process, wherein the thickness is about 5nm, and the deposition temperature is 200 ℃;
3. preparation of AlNdO by ALD supercirculation X (aluminum doped neodymium oxide) layer, alO X And NdO X The cycle ratio of (2) is 1:50, the deposition temperature is 300 ℃, and the thickness is about 3nm;
4. depositing an AZO transparent conductive layer by adopting an ALD (atomic layer deposition) process, wherein the thickness is about 80nm, and the deposition temperature is 200 ℃;
5. adopting PECVD technology to deposit boron doped a-Si H layer with thickness of about 10nm and deposition temperature of 170 ℃ on the back surface to form a full-area hole transport layer on the back surface;
6. depositing an ITO transparent conductive layer on the back by magnetron sputtering, wherein the thickness is about 100nm, and the square resistance is about 120 ohm/sq;
7. and printing silver electrodes on the front and back surfaces by adopting screen printing and low-temperature silver paste, adopting grid-shaped silver electrodes, and then drying and forming in the air at 200 ℃.
Thus, a crystalline silicon solar cell with an electronically passivated contact structure is formed.
Benefit from AlNdO X Compared with the SHJ cell based on the a-Si (n) window layer, the parasitic light absorption of the solar cell in the embodiment is remarkably reduced, and the short-circuit current Jsc can be improved by about 1mA/cm 2 The conversion efficiency can be improved by about 0.5%.
Example 8:
referring to FIG. 7, a schematic diagram of a solar cell according to the present embodiment is shown, wherein the solar cell is a perovskite solar cell comprising a conductive glass substrate 50 and AlNdO sequentially laminated thereon X (aluminum doped neodymium oxide) layer 61, perovskite light absorbing layer 62, hole transporting layer 63, and electrode 64. Preferably, the conductive glass substrate 50 is an ITO glass substrate, the perovskite light absorbing layer 62 is a CsMAFAPbIBr perovskite light absorbing layer, the hole transporting layer 63 is a Spiro-OMeTAD hole transporting layer, and the electrode 64 is an Ag electrode.
The specific preparation process of the perovskite solar cell in the embodiment is as follows:
1. on an ITO glass substrate, preparing AlNdO by adopting an ALD (atomic layer deposition) super-circulation method X (aluminum doped neodymium oxide) layer, alO X And NdO X The cycle ratio of (2) is 1:50, the deposition temperature is 200 ℃, and the thickness is about 5nm;
2. preparing a wide band gap CsMAFAPbIBr perovskite light absorption layer by adopting a spin coating method;
3. preparing a Spiro-OMeTAD hole transport layer by adopting a spin coating method, wherein the thickness of the hole transport layer is about 100nm; oxidizing for 12 hours in a drying cabinet;
4. silver electrodes were prepared through a mask using thermal evaporation.
Through the preparation process, the perovskite solar cell with the electronic passivation contact structure is formed.
Example 9:
referring to fig. 7, a schematic structural diagram of a solar cell in this embodiment is shown, where the solar cell in this embodiment is a perovskite-crystalline silicon stacked solar cell, a bottom cell is a hetero crystalline silicon cell structure, a wide bandgap perovskite top cell is stacked, and the front and back sides of the cell use grid-like silver electrodes.
1. N-type monocrystalline silicon is selected, a damaged layer on the surface of a silicon wafer is removed by adopting NaOH solution for corrosion, and then a silicon substrate 701 is obtained by adopting dilute KOH solution texturing and single-sided alkali polishing processes;
2. depositing an a-Si: H passivation layer 702 on the front and back surfaces of the substrate 701 by adopting a PECVD process after RCA cleaning, wherein the thickness is about 5nm, and the deposition temperature is 200 ℃;
3. adopting ALD technology to deposit phosphor doped nc-SiOx H703 with thickness of about 20nm on the front surface;
4. depositing an ITO transparent electrode 704 on the front surface by magnetron sputtering, wherein the thickness is about 25nm;
5. depositing boron doped a-Si on the back surface by adopting a PECVD process, wherein H (10 nm) 705 is deposited at a temperature of 170 ℃ to form a full-area hole transport layer on the back surface;
6. an ITO transparent electrode 706 (about 110 nm) is deposited on the back surface by magnetron sputtering, and the square resistance is about 120/sq;
7. printing a silver electrode 707 on the back surface by adopting a low-temperature silver paste screen printing process, and then drying and forming in air at 200 ℃;
8. depositing a NiO hole transport layer 708 on the front AZO by magnetron sputtering, wherein the thickness of the NiO hole transport layer 708 is 15nm, so as to form a composite layer;
9. preparation of wide bandgap Cs by spin coating 0.05 MA 0.15 FA 0.8 PbI 2.25 Br 0.75 A perovskite light absorbing layer 709 having a band gap of about 1.68eV;
10. preparation of AlNdO by ALD supercirculation X (aluminum doped neodymium oxide) layer 710, alO X And NdO X The cycle ratio of (2) is 1:50, the deposition temperature is 100 ℃, and the thickness is about 5nm;
11. by atomic layer deposition on AlNdO X Upper deposition of SnO 2 An electron transport layer 711 deposited at a temperature of 100deg.C and a thickness of 20nm;
12. magnetron sputtering is adopted to produce SnO 2 A zinc-doped indium oxide (IZO) transparent electrode 712 having a thickness of 100nm is deposited on the electron transport layer;
13. finally, silver electrode 713 is fabricated through a mask using high temperature thermal evaporation.
Through the preparation process, the perovskite-crystalline silicon laminated solar cell with the electronic passivation contact structure is formed.
The technical scheme shows that the invention has the following beneficial effects:
the invention is based on the metal compound AlNdO X As an electron passivation contact layer, the optical parasitic absorption can be reduced, the problem of short-circuit current density loss caused by light absorption caused by passivation contact of a doped silicon film can be effectively avoided, and meanwhile, the surface passivation performance and the selective transmission performance on electrons can be improved through Al doping.
The invention adopts ALD technology to prepare Al doped NdO X Passivation and conductivity can be improved. In addition, the preparation process is simple, economical and safe, and does not relate to the safety problem caused by flammable and explosive gases such as silane, phosphane and the like.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (10)
1. The electronic passivation contact structure is characterized in that the electronic passivation contact structure is positioned on a light receiving surface of a silicon substrate and comprises an aluminum doped neodymium oxide layer and a transparent conductive layer which are laminated on the light receiving surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
2. The electronic passivation contact structure of claim 1, wherein the aluminum doped neodymium oxide layer has a thickness of 1nm to 30nm; and/or the number of the groups of groups,
the silicon substrate is an N-type crystal silicon substrate.
3. The electronic passivation contact structure of claim 1, wherein a first passivation interlayer is laminated between the light-receiving surface of the silicon substrate and the aluminum-doped neodymium oxide layer, the first passivation interlayer being SiO 2 Layer, hydrogenated amorphous silicon, tiO 2 A combination of one or more of the layers.
4. The electronic passivation contact structure of claim 1, wherein the transparent conductive layer is an intrinsic ZnO-based transparent conductive layer or a doped ZnO-based transparent conductive layer, and the doping element in the doped ZnO-based transparent conductive layer is one or more of hydrogen, boron, aluminum, gallium, and indium.
5. The electronic passivation contact structure is characterized in that the electronic passivation contact structure is positioned on the backlight surface of the silicon substrate and comprises an aluminum doped neodymium oxide layer and a metal electrode layer which are laminated on the backlight surface of the silicon substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
6. The electronic passivation contact structure of claim 5, wherein the aluminum doped neodymium oxide layer has a thickness of 1nm to 30nm; and/or the number of the groups of groups,
the silicon substrate is an N-type crystal silicon substrate.
7. The electronic passivation contact structure of claim 5, wherein a second passivation interlayer is laminated between the back surface of the silicon substrate and the aluminum doped neodymium oxide layer, the second passivation interlayer being SiO 2 A layer, hydrogenated amorphous silicon,TiO 2 A combination of one or more of the layers.
8. The electronic passivation contact structure is characterized in that the electronic passivation contact structure is positioned on the light receiving surface of the conductive glass substrate and comprises an aluminum doped neodymium oxide layer laminated on the light receiving surface of the conductive glass substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5): 100.
9. A method for preparing an electronic passivation contact structure, the method comprising:
providing a substrate;
preparing an aluminum doped neodymium oxide layer on a light receiving surface or a back surface of a substrate, wherein the ratio of the doping mass of aluminum to the mass of neodymium is (1-5) 100;
the preparation of the aluminum doped neodymium oxide layer comprises the following steps:
preparation of AlO from aluminum precursor based on atomic layer deposition process X ；
Preparation of NdO from neodymium precursor based on atomic layer deposition process X ；
Based on atomic layer deposition process, with AlO X And NdO X Circularly preparing aluminum doped neodymium oxide layer and AlO X And NdO X The cycle ratio of (2) is 1: (20-200).
10. A solar cell, characterized in that the solar cell is a crystalline silicon solar cell, or a perovskite-crystalline silicon tandem solar cell, the crystalline silicon solar cell comprising the electronic passivation contact structure of any one of claims 1 to 7, the perovskite solar cell or perovskite-crystalline silicon tandem solar cell comprising the electronic passivation contact structure of claim 8.
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