CN208507687U - A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery - Google Patents
A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery Download PDFInfo
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- CN208507687U CN208507687U CN201821040310.6U CN201821040310U CN208507687U CN 208507687 U CN208507687 U CN 208507687U CN 201821040310 U CN201821040310 U CN 201821040310U CN 208507687 U CN208507687 U CN 208507687U
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 62
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 49
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 41
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000979 O alloy Inorganic materials 0.000 claims abstract description 22
- 239000011159 matrix material Substances 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 6
- 230000009849 deactivation Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of interdigital back contacts hetero-junctions monocrystalline silicon batteries, comprising: a n type single crystal silicon matrix, n type single crystal silicon matrix have opposite a front and a back side；Set on the doping N of n type single crystal silicon front side of matrix+Layer and positive N-type non-crystalline silicon layer；Interval is set to the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer at the n type single crystal silicon matrix back side.The interdigital back contacts hetero-junctions monocrystalline silicon battery of the utility model, is thinned the thickness of routine back contacts hetero-junctions n type single crystal silicon battery front side N-type non-crystalline silicon layer, and the N being lightly doped is arranged under amorphous silicon oxygen alloy layer+Layer, can not only reduce light absorption, the light loss of N-type non-crystalline silicon layer, but also using N+Layer achievement unit branch deactivation function, improves the photoelectric conversion efficiency of battery；N simultaneously+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer, to reduce series resistance losses, improves short circuit current, fill factor and the transfer efficiency of battery.
Description
Technical field
The utility model relates to technical field of solar batteries, and in particular, to a kind of interdigital back contacts hetero-junctions monocrystalline
Silion cell.
Background technique
Crystal-silicon solar cell has high conversion efficiency, good operating stability, long working life and manufacturing technology maturation etc.
Feature is the main force in current photovoltaic market.The p type single crystal silicon material of opposite boron-doping, the n type single crystal silicon material of p-doped
Middle boron content is extremely low, can be ignored by boron oxygen to caused photo attenuation, and some metal impurities in N-type silicon materials are empty to few son
Capture ability of the capture ability in cave lower than the impurity in P-type material to sub- electronics less, the N-type silicon ratio P under identical doping concentration
Type silicon has higher minority carrier lifetime.These characteristics make N-type silion cell have potential long-life and efficient
Advantage, N-type silion cell solar cell have become the developing direction of the following high efficiency crystal-silicon solar cell.
Interdigital back contacts (Interdigitated Back Contact, abbreviation IBC) electricity based on n type single crystal silicon substrate
Crystalline silicon photovoltaic effect, in cell backside, is collected without any distribution of electrodes, emitter and base stage cross arrangement in pond, front respectively
The photo-generated carrier of generation can effectively increase electricity due to the optical loss that battery front side does not have metal electrode grid line to block generation
The short circuit current of pond piece improves transfer efficiency.Amorphous silicon (a-Si:H)/n type single crystal silicon (c-Si) hetero-junctions (Hetero-
Junction with Intrinsic Thin-layer, abbreviation HIT) battery is good by intrinsic amorphous silicon (i-a-Si:H)
Surface passivation effect, by being inserted into one layer of very thin intrinsic amorphous between P-type non-crystalline silicon or N-type amorphous silicon and monocrystal silicon substrate
Silicon can be passivated the defect of monocrystalline silicon surface, and the surface recombination of interfacial state and monocrystalline silicon is greatly reduced, to improve minority carrier
Service life obtains higher open-circuit voltage.
N-type silicon back contacts heterojunction solar battery (hereinafter referred to as: HIBC battery) is hetero-junction solar cell and interdigital back contacts
The coupling battery of battery does not have the knot that metal blocks using the superior surface passivation performance of amorphous silicon, and in conjunction with IBC structure front
Structure advantage has been compatible with the good characteristic of two kinds of batteries, has good optically and electrically performance, process temperatures are low, stability is good；
Battery front side is without grid line shading, it is ensured that battery has high short circuit current (Isc)；Battery tow sides have the hydrogen of high quality
Change amorphous silicon passivation layer, ensure that battery has high open-circuit voltage (Voc).
In general, the front of interdigital back contacts hetero-junctions n type single crystal silicon battery is from inside to outside using n type single crystal silicon matrix, sheet
The structure that sign amorphous silicon, N-type amorphous silicon, antireflection layer are sequentially overlapped, the advantage of this structure is intrinsic amorphous silicon provide it is excellent
Different chemical passivation performance, N-type amorphous silicon realize field passivation；The disadvantage is that front photo-generated carrier generation rate is high, and amorphous silicon
It is very short that layer absorbs the photo-generated carrier service life that light generates, it is difficult to effective photogenerated current is formed, to reduce short circuit current
Density causes the decline of shortwave effect and optical loss to increase；Furthermore it is electric because of caused by the light absorption of amorphous silicon layer in order to reduce
Short-circuit current density decline in pond must optimize when designing, manufacturing back contacts hetero-junctions n type single crystal silicon battery, control battery front side N
The thickness of type amorphous silicon and intrinsic amorphous silicon layer, and to the conversion effect for realizing excellent inactivating performance and further promotion battery
Rate brings difficulty.
Utility model content
To solve the above-mentioned problems of the prior art, the utility model provides a kind of interdigital back contacts hetero-junctions monocrystalline
Silion cell improves the photoelectric conversion efficiency of battery to reduce the light loss of battery front side in the prior art.
In order to reach above-mentioned purpose of utility model, the utility model uses the following technical solution:
The utility model provides a kind of interdigital back contacts hetero-junctions monocrystalline silicon battery, comprising:
One n type single crystal silicon matrix, the n type single crystal silicon matrix have opposite a front and a back side；
Set on the doping N of the n type single crystal silicon front side of matrix+Layer and positive N-type non-crystalline silicon layer；
Interval is set to the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer at the n type single crystal silicon matrix back side.
Preferably, the doping N+Layer is that N is lightly doped+Layer, the doping N+The surface dopant concentration of layer less than 1 ×
1018cm-3, diffusion depth is 0.2~1 μm.
Preferably, the positive N-type non-crystalline silicon layer with a thickness of 1~10nm.
Preferably, the monocrystalline silicon battery further includes being set to the doping N+It is non-between layer and positive N-type non-crystalline silicon layer
Passivation layer before crystal silicon oxygen alloy.
Preferably, before the amorphous silicon oxygen alloy passivation layer with a thickness of 1~10nm, optical energy gap is greater than 2eV.
Preferably, the monocrystalline silicon battery further includes the anti-reflection layer set on the positive N-type non-crystalline silicon layer surface.
Preferably, the anti-reflection layer is one or two kinds of combinations of oxide, nitride, and the anti-reflection layer is with a thickness of 50
~200nm.
Preferably, the monocrystalline silicon battery further includes connecing on the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer
Contact layer and the dielectric isolation layer (10) between the P-type non-crystalline silicon layer and back side N-type non-crystalline silicon layer.
Preferably, the contact layer is made of transparent conductive film and metal electrode lamination, the transparent conductive film packet
Include the In of tin dope2O3With the ZnO of aluminium doping, the metal electrode is silver, copper or aluminium.
Preferably, the monocrystalline silicon battery further includes that the amorphous silicon oxygen alloy set on the n type single crystal silicon matrix back side is carried on the back
Passivation layer.
Compared with prior art, routine back contacts are thinned in the interdigital back contacts hetero-junctions monocrystalline silicon battery of the utility model
The thickness of hetero-junctions n type single crystal silicon battery front side N-type non-crystalline silicon layer, and the N being lightly doped is set under amorphous silicon oxygen alloy layer+
Layer, can not only reduce light absorption, the light loss of N-type non-crystalline silicon layer, but also using N+Layer achievement unit branch deactivation function, improves electricity
The photoelectric conversion efficiency in pond；N simultaneously+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer, to reduce series electrical
Resistance loss, improves short circuit current, fill factor and the transfer efficiency of battery.
In addition, the front of battery replaces intrinsic amorphous silicon layer as passivation using the broader amorphous silicon oxygen alloy of optical energy gap
On the one hand layer can reduce passivation layer in the absorption of blue light region, reduce light loss, improve the short-circuit current density of battery, another party
Face amorphous silicon oxygen alloy surface defect density is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only that this is practical new
Some embodiments of type for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the interdigital back contacts hetero-junctions monocrystalline silicon battery of the utility model embodiment.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
It describes in detail, it is clear that described embodiment is only a part of example of the utility model, rather than whole embodiments.Base
In the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, belongs to scope of protection of the utility model.
It is a kind of interdigital back contacts hetero-junctions monocrystalline silicon battery of the utility model embodiment, the monocrystalline silicon referring to Fig. 1
Battery includes n type single crystal silicon matrix 1, wherein the n type single crystal silicon matrix 1 has opposite a front and a back side；In N-type list
The front of crystal silicon matrix 1 is sequentially prepared single side and N is lightly doped+Passivation layer 3, front N before layer 2, amorphous silicon oxygen alloy (a-SiOx:H)
Type amorphous silicon layer 4 and anti-reflection layer 5；Amorphous silicon oxygen alloy (a-SiOx:H) amorphous silicon oxygen is prepared at the back side of n type single crystal silicon matrix 1
Alloy carries on the back passivation layer 6；In the surface alternating deposit P-type non-crystalline silicon layer 7 and back side N-type amorphous of amorphous silicon oxygen alloy back passivation layer 6
Silicon layer 8；Transparent conductive film, metal film, shape are sequentially depositing in P-type non-crystalline silicon layer 7 and 8 surface of back side N-type non-crystalline silicon layer respectively
At contact layer 9；Area deposition dielectric isolation layer 10 between P-type non-crystalline silicon layer 7 and back side N-type non-crystalline silicon layer 8.
By the way that the thickness of back contacts hetero-junctions n type single crystal silicon battery front side N-type non-crystalline silicon layer 4 is thinned, and in amorphous silicon oxygen
The N being lightly doped is provided under alloy-layer+Layer, can not only reduce light absorption, the light loss of N-type non-crystalline silicon layer 4, but also using being lightly doped
N+Layer achievement unit branch deactivation function, while the N being lightly doped+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer,
To reduce series resistance losses, the fill factor and transfer efficiency of battery are improved, the photoelectric conversion efficiency of battery is improved.
Except above-mentioned points, since the cellar area of back contacts hetero-junctions n type single crystal silicon battery is often larger, the resistance of silicon substrate
Rate is higher, and the photo-generated carrier for resulting from battery front side, which needs to transmit relatively long distance and gets to cell backside, to be collected, photoproduction
Carrier transport causes biggish series resistance losses, so as to cause fill factor reduction.And the N being lightly doped+Layer 2 is well
Solves the problems, such as this, the N being lightly doped+Layer 2 can provide the lateral low-resistance conductive path of photo-generated carrier, to reduce series resistance
Loss, improves short circuit current, fill factor and the transfer efficiency of battery.
Preferably, the positive N-type non-crystalline silicon layer 4 with a thickness of 1~10nm, the doping N+Layer 2 is that N is lightly doped+Layer,
The doping N+The surface dopant concentration of layer 2 is less than 1 × 1018cm-3, diffusion depth is 0.2~1 μm.The positive N of the thickness range
The doping N of type amorphous silicon layer 4 and the doping level and diffusion depth+Layer 2, realizes the light absorption for both reducing N-type non-crystalline silicon layer, light
Loss, and the purpose for the passivation effect having had.
Preferably, before the amorphous silicon oxygen alloy passivation layer 3 with a thickness of 1~10nm, optical energy gap is greater than 2eV.This
The front of the battery of embodiment replaces intrinsic amorphous silicon layer as passivation layer using the broader amorphous silicon oxygen alloy of optical energy gap, and one
Aspect can reduce passivation layer in the absorption of blue light region, reduce light loss, improve the short-circuit current density of battery, another aspect amorphous
Silicon oxygen alloy surface defect density is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Likewise, the amorphous silicon oxygen alloy back passivation layer 6 at 1 back side of n type single crystal silicon matrix is wider using optical energy gap
Amorphous silicon oxygen alloy replace intrinsic amorphous silicon layer to be used as passivation layer, the interdigital back contacts hetero-junctions monocrystalline silicon battery of setting guarantee
The interface passivation effect at the back side, it is preferred that amorphous silicon oxygen alloy carry on the back passivation layer 6 with a thickness of 1~10nm, optical energy gap is greater than
2eV。
Preferably, 1 resistivity of the embodiment of the present invention n type single crystal silicon matrix is 0.5~10 Ω cm, with a thickness of 100~
300μm；
The anti-reflection layer 5 is one or two kinds of combinations of oxide, nitride, the anti-reflection layer 5 with a thickness of 50~
200nm.The anti-reflection layer 4 of the thickness reduces reflection loss to the maximum extent, and increases the transmitance of light, to improve the effect of battery
Rate.
Referring to Fig.1, P-type non-crystalline silicon layer 7 with a thickness of 10~100nm, width is 100~1000 μm.Wherein back side N-type is non-
The thickness of crystal silicon layer 8 is identical as the thickness of P-type non-crystalline silicon layer 7, but its width is less than the width of P-type non-crystalline silicon layer 7.
Wherein, contact layer 9 can be made of transparent conductive film and metal electrode lamination.The transparent conductive film includes tin
The In of doping2O3With the ZnO (AZO) etc. of aluminium doping, the metal electrode is the materials such as silver, copper or aluminium.The width of contact layer 9 is
10~300 μm.
Preferably, dielectric isolation layer 10 uses one or more combinations of silica, silicon nitride, aluminium oxide.
Routine back contacts hetero-junctions n type single crystal silicon is thinned in the interdigital back contacts hetero-junctions monocrystalline silicon battery of the utility model
The thickness of battery front side N-type non-crystalline silicon layer, and the N being lightly doped is set under amorphous silicon oxygen alloy layer+Layer, it is non-can both to have reduced N-type
The light absorption of crystal silicon layer, light loss, and using N+Layer achievement unit branch deactivation function improves the photoelectric conversion effect of battery
Rate；N simultaneously+The lateral low-resistance conductive path of photo-generated carrier can also be provided in layer, to reduce series resistance losses, improves battery
Short circuit current, fill factor and transfer efficiency.
In addition, the front of battery replaces intrinsic amorphous silicon layer as passivation using the broader amorphous silicon oxygen alloy of optical energy gap
On the one hand layer can reduce passivation layer in the absorption of blue light region, reduce light loss, improve the short-circuit current density of battery, another party
Face amorphous silicon oxygen alloy surface defect density is lower than intrinsic amorphous silicon, it can be achieved that more excellent interface passivation effect.
Although the utility model has shown and described referring to specific embodiment, those skilled in the art will be managed
Solution, in the case where not departing from the spirit and scope of the utility model being defined by the claims and their equivalents, can herein into
The various change of row in form and details.
Claims (10)
1. a kind of interdigital back contacts hetero-junctions monocrystalline silicon battery characterized by comprising
One n type single crystal silicon matrix (1), the n type single crystal silicon matrix (1) have opposite a front and a back side；
Set on the positive doping N of n type single crystal silicon matrix (1)+Layer (2) and positive N-type non-crystalline silicon layer (4)；
Interval is set to the P-type non-crystalline silicon layer (7) and back side N-type non-crystalline silicon layer (8) at n type single crystal silicon matrix (1) back side.
2. monocrystalline silicon battery according to claim 1, which is characterized in that the doping N+Layer (2) is that N is lightly doped+Layer, institute
State doping N+The surface dopant concentration of layer (2) is less than 1 × 1018cm-3, diffusion depth is 0.2~1 μm.
3. monocrystalline silicon battery according to claim 2, which is characterized in that it is described front N-type non-crystalline silicon layer (4) with a thickness of
1~10nm.
4. monocrystalline silicon battery according to any one of claims 1 to 3, which is characterized in that the monocrystalline silicon battery also wraps
It includes and is set to the doping N+Passivation layer (3) before amorphous silicon oxygen alloy between layer (2) and positive N-type non-crystalline silicon layer (4).
5. monocrystalline silicon battery according to claim 4, which is characterized in that passivation layer (3) before the amorphous silicon oxygen alloy
With a thickness of 1~10nm, optical energy gap is greater than 2eV.
6. monocrystalline silicon battery according to claim 5, which is characterized in that the monocrystalline silicon battery further include be set to it is described just
The anti-reflection layer (5) on face N-type non-crystalline silicon layer (4) surface.
7. monocrystalline silicon battery according to claim 6, which is characterized in that the anti-reflection layer (5) is oxide, nitride
One or two kinds of combinations, the anti-reflection layer (5) is with a thickness of 50~200nm.
8. monocrystalline silicon battery according to claim 5, which is characterized in that the monocrystalline silicon battery further includes being set to the P
Contact layer (9) on type amorphous silicon layer (7) and back side N-type non-crystalline silicon layer (8) and it is set to the P-type non-crystalline silicon layer (7) and back side N
Dielectric isolation layer (10) between type amorphous silicon layer (8).
9. monocrystalline silicon battery according to claim 8, which is characterized in that the contact layer (9) by transparent conductive film with
Metal electrode lamination composition, the transparent conductive film includes the In of tin dope2O3With the ZnO of aluminium doping, the metal electrode is
Silver, copper or aluminium.
10. monocrystalline silicon battery according to claim 9, which is characterized in that the monocrystalline silicon battery further includes being set to the N
The amorphous silicon oxygen alloy at type single crystal silicon substrate (1) back side carries on the back passivation layer (6).
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| CN201821040310.6U CN208507687U (en) | 2018-07-03 | 2018-07-03 | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615775A (en) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery |
| CN111211194A (en) * | 2020-01-06 | 2020-05-29 | 河南大学 | MIS-silicon heterojunction solar cell and preparation method thereof |
-
2018
- 2018-07-03 CN CN201821040310.6U patent/CN208507687U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615775A (en) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery |
| CN108615775B (en) * | 2018-07-03 | 2024-01-30 | 黄河水电光伏产业技术有限公司 | Interdigital back contact heterojunction monocrystalline silicon battery |
| CN111211194A (en) * | 2020-01-06 | 2020-05-29 | 河南大学 | MIS-silicon heterojunction solar cell and preparation method thereof |
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