CN1172378C - 栅电极及其形成方法 - Google Patents

栅电极及其形成方法 Download PDF

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Publication number
CN1172378C
CN1172378C CNB961214740A CN96121474A CN1172378C CN 1172378 C CN1172378 C CN 1172378C CN B961214740 A CNB961214740 A CN B961214740A CN 96121474 A CN96121474 A CN 96121474A CN 1172378 C CN1172378 C CN 1172378C
Authority
CN
China
Prior art keywords
amorphous silicon
silicon layer
gate electrode
tungsten silicide
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB961214740A
Other languages
English (en)
Chinese (zh)
Other versions
CN1155159A (zh
Inventor
崔在成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1155159A publication Critical patent/CN1155159A/zh
Application granted granted Critical
Publication of CN1172378C publication Critical patent/CN1172378C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB961214740A 1995-12-15 1996-12-15 栅电极及其形成方法 Expired - Fee Related CN1172378C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR50441/1995 1995-12-15
KR1019950050441A KR100203896B1 (ko) 1995-12-15 1995-12-15 게이트 전극 형성방법
KR50441/95 1995-12-15

Publications (2)

Publication Number Publication Date
CN1155159A CN1155159A (zh) 1997-07-23
CN1172378C true CN1172378C (zh) 2004-10-20

Family

ID=19440439

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB961214740A Expired - Fee Related CN1172378C (zh) 1995-12-15 1996-12-15 栅电极及其形成方法

Country Status (5)

Country Link
JP (1) JPH1032334A (ja)
KR (1) KR100203896B1 (ja)
CN (1) CN1172378C (ja)
DE (1) DE19652070C2 (ja)
GB (1) GB2308233B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9802940D0 (en) * 1998-02-11 1998-04-08 Cbl Ceramics Ltd Gas sensor
KR100710645B1 (ko) * 2001-05-18 2007-04-24 매그나칩 반도체 유한회사 반도체소자의 금속배선 형성방법
CN101572228B (zh) * 2008-04-28 2011-03-23 中芯国际集成电路制造(北京)有限公司 多晶硅薄膜及栅极的形成方法
CN112514031A (zh) * 2018-08-11 2021-03-16 应用材料公司 石墨烯扩散阻挡物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459770B1 (en) * 1990-05-31 1995-05-03 Canon Kabushiki Kaisha Method for producing a semiconductor device with gate structure
JP2901423B2 (ja) * 1992-08-04 1999-06-07 三菱電機株式会社 電界効果トランジスタの製造方法
US5364803A (en) * 1993-06-24 1994-11-15 United Microelectronics Corporation Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure
JP2560993B2 (ja) * 1993-09-07 1996-12-04 日本電気株式会社 化合物半導体装置の製造方法
DE4440857C2 (de) * 1993-11-16 2002-10-24 Hyundai Electronics Ind Verfahren zur Herstellung einer Gateelektrode einer Halbleitervorrichtung

Also Published As

Publication number Publication date
GB2308233B (en) 2000-11-15
DE19652070C2 (de) 2003-02-20
DE19652070A1 (de) 1997-06-19
GB9626113D0 (en) 1997-02-05
GB2308233A (en) 1997-06-18
KR100203896B1 (ko) 1999-06-15
KR970053905A (ko) 1997-07-31
JPH1032334A (ja) 1998-02-03
CN1155159A (zh) 1997-07-23

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041020

Termination date: 20100115