CN1171239C - 半导体同步存储器件及其控制方法 - Google Patents
半导体同步存储器件及其控制方法 Download PDFInfo
- Publication number
- CN1171239C CN1171239C CNB991057716A CN99105771A CN1171239C CN 1171239 C CN1171239 C CN 1171239C CN B991057716 A CNB991057716 A CN B991057716A CN 99105771 A CN99105771 A CN 99105771A CN 1171239 C CN1171239 C CN 1171239C
- Authority
- CN
- China
- Prior art keywords
- signal
- data
- memory device
- synchronous memory
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/16—Protection against loss of memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10109198A JPH11297072A (ja) | 1998-04-13 | 1998-04-13 | 半導体記憶装置とその制御方法 |
JP101091/1998 | 1998-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1232269A CN1232269A (zh) | 1999-10-20 |
CN1171239C true CN1171239C (zh) | 2004-10-13 |
Family
ID=14291434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991057716A Expired - Fee Related CN1171239C (zh) | 1998-04-13 | 1999-04-13 | 半导体同步存储器件及其控制方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6084822A (zh) |
JP (1) | JPH11297072A (zh) |
KR (1) | KR100299003B1 (zh) |
CN (1) | CN1171239C (zh) |
TW (1) | TW425554B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100363107B1 (ko) * | 1998-12-30 | 2003-02-20 | 주식회사 하이닉스반도체 | 반도체메모리 장치 |
US6931479B2 (en) * | 2003-03-04 | 2005-08-16 | Micron Technology, Inc. | Method and apparatus for multi-functional inputs of a memory device |
US7679972B2 (en) * | 2007-11-19 | 2010-03-16 | Spansion Llc | High reliable and low power static random access memory |
CN101494090B (zh) * | 2008-01-21 | 2014-03-19 | 南亚科技股份有限公司 | 存储器存取控制方法 |
KR101223537B1 (ko) * | 2010-10-29 | 2013-01-21 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH077599B2 (ja) * | 1984-05-25 | 1995-01-30 | 株式会社日立製作所 | 半導体集積回路装置 |
JP2721909B2 (ja) * | 1989-01-18 | 1998-03-04 | 三菱電機株式会社 | 半導体記憶装置 |
US5600605A (en) * | 1995-06-07 | 1997-02-04 | Micron Technology, Inc. | Auto-activate on synchronous dynamic random access memory |
JP3566429B2 (ja) * | 1995-12-19 | 2004-09-15 | 株式会社ルネサステクノロジ | 同期型半導体記憶装置 |
-
1998
- 1998-04-13 JP JP10109198A patent/JPH11297072A/ja active Pending
-
1999
- 1999-04-09 US US09/288,785 patent/US6084822A/en not_active Expired - Lifetime
- 1999-04-13 KR KR1019990013065A patent/KR100299003B1/ko not_active IP Right Cessation
- 1999-04-13 TW TW088105905A patent/TW425554B/zh not_active IP Right Cessation
- 1999-04-13 CN CNB991057716A patent/CN1171239C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19990083168A (ko) | 1999-11-25 |
TW425554B (en) | 2001-03-11 |
KR100299003B1 (ko) | 2001-09-26 |
US6084822A (en) | 2000-07-04 |
CN1232269A (zh) | 1999-10-20 |
JPH11297072A (ja) | 1999-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NONE Effective date: 20030521 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030521 Address after: Tokyo, Japan Applicant after: NEC Corp. Co-applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.; NEC ELECTRONICS TAIWAN LTD. Effective date: 20080613 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080613 Address after: Tokyo, Japan Patentee after: Nihitatsu Memory Co., Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. Patentee before: Enyi Jubilee Electronics Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: NIHITATSU MEMORY CO., LTD. Effective date: 20130905 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130905 Address after: Luxemburg Luxemburg Patentee after: PS4 Russport Co.,Ltd. Address before: Tokyo, Japan Patentee before: Nihitatsu Memory Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041013 Termination date: 20150413 |
|
EXPY | Termination of patent right or utility model |